Abstract: A method for forming an interconnect device is provided by the present disclosure. The method includes providing a dielectric layer on a substrate, forming openings in the dielectric layer to expose a portion of a surface of the substrate at a bottom of each opening and forming a metal layer to fill up the openings. The method also includes forming a semiconductor cover layer on the metal layer and on the dielectric layer, and performing a thermal annealing reaction to convert portions of the semiconductor cover layer that are on the metal layer into a metal capping layer. The method further includes performing a nitridation process on the metal capping layer and a remaining semiconductor cover layer to convert the metal capping layer into a metal nitride capping layer and the remaining semiconductor cover layer into a semiconductor nitride layer.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: A method for forming an interconnect device is provided by the present disclosure. The method includes providing a dielectric layer on a substrate, forming openings in the dielectric layer to expose a portion of a surface of the substrate at a bottom of each opening and forming a metal layer to fill up the openings. The method also includes forming a semiconductor cover layer on the metal layer and on the dielectric layer, and performing a thermal annealing reaction to convert portions of the semiconductor cover layer that are on the metal layer into a metal capping layer. The method further includes performing a nitridation process on the metal capping layer and a remaining semiconductor cover layer to convert the metal capping layer into a metal nitride capping layer and the remaining semiconductor cover layer into a semiconductor nitride layer.

Abstract: A method for forming a semiconductor structure is provided. The method includes providing a substrate; and forming an ultra-low-dielectric-constant (ULK) dielectric layer on a surface of the substrate. The method also includes etching the ultra-low-dielectric-constant dielectric layer to form a trench in the ultra-low-dielectric-constant dielectric layer; and performing an inert plasma treatment process on a side surface of the trench. Further, the method includes performing a carbonization process on the side surface of the trench; and performing a nitridation process on the side surface of the trench to form a SiCNH layer on the side surface of the trench.

Abstract: A method for forming a semiconductor structure includes providing a semiconductor substrate having a metal gate structure formed on the semiconductor substrate; forming a first dielectric layer covering a side surface of the metal gate structure on the semiconductor substrate; forming a cap layer on the metal gate structure; etching a top portion of the first dielectric layer using the cap layer as an etching mask; forming a protective sidewall spacer on a side surface of the cap layer and a side surface of a portion of the first dielectric layer under the cap layer; forming a second dielectric layer to cover the cap layer, the protective sidewall spacer and a top surface of the etched first dielectric layer; forming at least a first through-hole in the second dielectric layer; and forming a first conductive via in the first through-hole.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: The present disclosure provides a method for forming a semiconductor device. The method includes providing a substrate and forming a dielectric layer on the substrate by a deposition process using reactant gases. The reactant gases include a silicon-source gas and an oxygen-source gas under a radio-frequency (RF) power. The deposition process performed for a total deposition time to form the dielectric layer is divided into a first time length, a second time length and a third time length. The RF power of the deposition process in the first time length is a first power, the first power gradually increases from the first power to a second power in the second time length, the RF power in the third time length is the second power, and the first power is less than the second power.

Abstract: A method for forming an interconnect device is provided by the present disclosure. The method includes providing a dielectric layer on a substrate, forming openings in the dielectric layer to expose a portion of a surface of the substrate at a bottom of each opening and forming a metal layer to fill up the openings. The method also includes forming a semiconductor cover layer on the metal layer and on the dielectric layer, and performing a thermal annealing reaction to convert portions of the semiconductor cover layer that are on the metal layer into a metal capping layer. The method further includes performing a nitridation process on the metal capping layer and a remaining semiconductor cover layer to convert the metal capping layer into a metal nitride capping layer and the remaining semiconductor cover layer into a semiconductor nitride layer.

Abstract: A method for forming shallow trench isolation (STI) structures includes using a hard mask, such as silicon nitride, in shallow trench etching and also as a polishing stop layer in planarizing the dielectric that fills the trenches. After the shallow trench is filled with the dielectric material and planarized, a top portion of the hard mask is removed, resulting in a top portion of the filled dielectric material to protrude above the remaining hard mask. The protruding dielectric is then treated in an oxygen plasma and annealed at a high temperature to form a densified oxide cap layer. The densified oxide layer can provide greater resistance to corrosion and can protect the shallow trench isolation structure during subsequent wet processing, such as DHF clean. Variations in the STI structures can be reduced and device performance improved.

Abstract: A protection component includes: a package substrate; a first fuse unit disposed in the package substrate, having a first fusing region; a second fuse unit disposed in the package substrate, having a second fusing region which is close to the first fusing region; and a first buried cave disposed in the package substrate corresponding to the first and second fusing regions. When one of the first and second fusing regions is blown out, the first buried cave assists energy of fuse melting to break the other of the first and second fusing regions.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: A method for forming shallow trench isolation (STI) structures includes using a hard mask, such as silicon nitride, in shallow trench etching and also as a polishing stop layer in planarizing the dielectric that fills the trenches. After the shallow trench is filled with the dielectric material and planarized, a top portion of the hard mask is removed, resulting in a top portion of the filled dielectric material to protrude above the remaining hard mask. The protruding dielectric is then treated in an oxygen plasma and annealed at a high temperature to form a densified oxide cap layer. The densified oxide layer can provide greater resistance to corrosion and can protect the shallow trench isolation structure during subsequent wet processing, such as DHF clean. Variations in the STI structures can be reduced and device performance improved.

Abstract: A method is provided for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, and forming a shallow trench isolation structure in the semiconductor substrate. The method also includes forming a plurality of parallel gate structures on the semiconductor substrate surrounded by the shallow trench isolation structure. Further, the method includes forming a plurality of first trenches in the semiconductor substrate at least one side of the gate structures proximity to the shallow trench isolation structure, and forming a first silicon germanium layer with a first germanium concentration in each of the first trenches. Further the method also includes forming a plurality second trenches in semiconductor substrate at least one side of the gate structures farther from the shallow trench isolation structure, and forming a second silicon germanium layer with a second germanium concentration greater than the first germanium concentration in each of the second trenches.

Abstract: A method is provided for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, and forming a shallow trench isolation structure in the semiconductor substrate. The method also includes forming a plurality of parallel gate structures on the semiconductor substrate surrounded by the shallow trench isolation structure. Further, the method includes forming a plurality of first trenches in the semiconductor substrate at least one side of the gate structures proximity to the shallow trench isolation structure, and forming a first silicon germanium layer with a first germanium concentration in each of the first trenches. Further the method also includes forming a plurality second trenches in semiconductor substrate at least one side of the gate structures farther from the shallow trench isolation structure, and forming a second silicon germanium layer with a second germanium concentration greater than the first germanium concentration in each of the second trenches.

Abstract: A protection component includes: a package substrate; a first fuse unit disposed in the package substrate, having a first fusing region; a second fuse unit disposed in the package substrate, having a second fusing region which is close to the first fusing region; and a first buried cave disposed in the package substrate corresponding to the first and second fusing regions. When one of the first and second fusing regions is blown out, the first buried cave assists energy of fuse melting to break the other of the first and second fusing regions.

Abstract: A combination heat sink form of a stack of radiation fins is disclosed. Each radiation fin has retaining flanges at two opposite lateral sides for securing another radiation fin. Each retaining flange has a bottom neck perpendicularly extending from the respective radiation fin, two pairs of vertically spaced retaining fingers respectively extending from two opposite lateral sides of the bottom neck in a parallel manner relative to the respective radiation fin for securing another radiation fin, a top retaining notch defined between the two pairs of vertically spaced retaining fingers above the bottom neck for accommodating the bottom neck of another radiation fin, and a retaining gap defined between each two vertically spaced retaining fingers for receiving another radiation fin.

Abstract: A temperature indication pipe joint, including a shell, wherein a water conduit is arranged in said shell, and including a heat transmission unit which has a first end in said water conduit and a second end connected to the center of a spiral double sheet metal, said spiral double sheet metal further has an indicating needle extended from its other end. By utilizing the double sheet metal to sense the change of temperature and deform accordingly, the water temperature can be indicated, which can reduce the cost and achieve a simpler structure compared to the digital thermometer used before; when rotating the cover of the present invention, the quantity of water stream will be adjusted.

Abstract: A water-saving control device and the control method thereof is used in an inflowing waterway. The control device has an internal floating body disposed in an upper cover, a spring and a main body. The upper end of the internal floating body forms a head, which can be hermetically cooperated with an opening of the upper end of the upper cover. The side wall of the internal floating body has a water inlet. The side wall of the lower part of the main body has a flow adjusting opening and the lower part of the internal floating body is movable in the main body for adjusting the flow opening. The lower end of the spring abuts against the inside of the main body while the upper end abuts against the internal floating body to seal the opening of the upper cover.

Abstract: A connecting and fixing structure for a shower head comprises a connector formed in the shower head, a main joint connected to an outlet on the top of the wall, a movable fixing structure used for connecting the main joint and the connector; the movable fixing structure and the main joint may be assembled to form such a structure that can be moveably engaged. When the connector is inserted into the main joint, the connector is fixed on the main joint by the moveable fixing structure through the structure mentioned above and a neck on the connector. Therefore it is convenient and fast to assemble and disassemble the shower head.

Abstract: A configuration structure of a spray nozzle and a shower head, adapted to a wall outlet, includes a three-way control valve, a connecting rod and a spray unit. The three-way control valve has an inlet connected to the wall outlet, a front outlet connected to an inlet tube extending from a rear side of the connecting rod, and a lower outlet connected to a hose of the spray unit. The connecting rod has a closed lower end, an upper end connected with the shower head, and at least one spray head at a front side thereof. With the three-way control valve and the connecting rod, the front and lower outlets of the three-way control valve are connected to the spray nozzle and the connecting rod respectively to form two water passages. The upper end of the connecting rod is connected with the shower head.