Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.

Abstract: Disclosed are a power demand side speech interaction method and system. The method includes: obtaining original demand information, the original demand information including user's basic information, user demand information, and a user demand time; converting the original demand information into first information in text format; performing text statistical analysis based on an industry term on the first information in text format, to obtain second information; searching for corresponding user's actual information from a database according to the second information; outputting the user's actual information; searching for a corresponding forecasting model from the database, according to the second information and the user's basic information; calculating, according to a policy limit value of latest policy information in the database, a time for which the model corresponding to the user's basic information reaches the policy limit value; and transmitting an early warning message.

Abstract: A reparameterization method for initializing a machine learning model includes initializing a prefix layer of a first low dimensional layer in the machine learning model and a postfix layer of the first low dimensional layer, inverting the prefix layer to generate an inverse prefix layer of the first low dimensional layer, inverting the postfix layer to generate an inverse postfix layer of the first low dimensional layer, combining the inverse prefix layer, the first low dimensional layer and the inverse postfix layer to form a high dimensional layer, generating parallel operation layers from the high dimensional layer, and assigning initial weights to the parallel operation layers.

Abstract: The present disclosure relates to a process and a device for producing vinyl acetate by an ethylene process. By additionally arranging an ethylene recovery membrane assembly in a vinyl acetate synthesis section, the content of inert components such as nitrogen in a circulating system is controlled, ethylene gas is recovered from non-condensable gas, and a recovery rate of the ethylene reaches 58% or above. By adding sideline extraction at a refined VAC tower in a vinyl acetate refining section, a vinyl acetate product with purity higher than 99.98% is obtained, a mass fraction of acetic acid is less than or equal to 20 ppm, a mass fraction of acetaldehyde is less than or equal to 20 ppm, and a mass fraction of water is less than or equal to 100 ppm. In synthesis and refining processes of the vinyl acetate, a cooling method is adopted.

Abstract: A user equipment (UE) includes one or more non-transitory computer-readable media containing computer-executable instructions embodied therein, and at least one processor coupled to the one or more non-transitory computer-readable media. The at least one processor configured to execute the computer-executable instructions to receive downlink control information (DCI) on a downlink (DL) channel of a non-terrestrial network (NTN), the DL channel reception ending in a first slot, and transmit an uplink (UL) transmission on a UL channel of the NTN in a second slot. The second slot is separate from the first slot by a timing offset, where a duration of the timing offset is dependent on a type of the UL transmission and a numerology of the UL transmission.

Abstract: A method including forming a III-V compound layer on a substrate and implanting a main dopant in the III-V compound layer to form source and drain regions. The method further includes implanting a group V species into the source and drain regions. A semiconductor device including a substrate and a III-V compound layer over the substrate. The semiconductor device further includes source and drain regions in the III-V layer, wherein the source and drain regions comprises a first dopants and a second dopant, and the second dopant comprises a group V material.

Abstract: A method includes forming a transistor over a substrate; forming a front-side interconnection structure over the transistor; after forming the front-side interconnection structure, removing the substrate; after removing the substrate, forming a backside via to be electrically connected to the transistor; depositing a dielectric layer to cover the backside via; forming an opening in the dielectric layer to expose the backside via; forming a spacer structure on a sidewall of the opening; after forming a spacer structure, forming a conductive feature in the opening to be electrically connected to the backside via; and after forming the conductive feature, forming an air gap in the spacer structure.

Abstract: A system and a method for generating an arbitrary waveform of a microwave photon based on optical frequency tuning are provided. The system includes an optical frequency comb, a first optical distribution unit, a first photoelectric conversion unit, a frequency-shift drive circuit, and an optical frequency doubling/dividing unit, an optical frequency-shift combining optical circuit, a second photoelectric conversion unit, and a second electrical processing circuit. The optical frequency comb is used as the frequency source, with the features of high stability and low phase noise of the optical frequency comb, the arbitrary waveforms of microwave photons can be generated through optical frequency tuning control; the performance of the optical frequency comb is three orders of magnitude or more higher than that of the common microwave frequency sources, therefore, the waveforms with high-frequency, ultra-wideband, low phase noise, and high stability can be generated.

Abstract: A method includes depositing a high-k gate dielectric layer over and along sidewalls of a semiconductor fin. The method further includes depositing an n-type work function metal layer over the high-k gate dielectric layer and performing a passivation treatment on the high-k gate dielectric layer through the n-type work function metal layer. The passivation treatment comprises a remote plasma process. The method further includes depositing a fill metal over the n-type work function metal layer to form a metal gate stack over the high-k gate dielectric layer. The metal gate stack comprising the n-type work function metal layer and the fill metal.

Abstract: A method for extracting entities comprises obtaining a document that includes a series of textual fields that includes a plurality of entities. Each entity represents information associated with a predefined category. The method includes generating, using the document, a series of tokens representing the series of textual fields. The method includes generating an entity prompt that includes the series of tokens and one of the plurality of entities and generating a schema prompt that includes a schema associated with the document. The method includes generating a model query that includes the entity prompt and the schema prompt and determining, using an entity extraction model and the model query, a location of the one of the plurality of entities among the series of tokens. The method includes extracting, from the document, the one of the plurality of entities using the location of the one of the plurality of entities.

Abstract: A method for processing a video with a dynamic video-based super-resolution network and a circuit system are provided. In the method, quality scores used to assess a quality of an input video are calculated based on image features of the input video. A moving average algorithm is performed on the quality scores of multiple frames of the input video for obtaining a moving average score. Two corresponding weight tables are selected according to the moving average score. The two weight tables are used to calculate a blending weight that is applied to a neural network super-resolution algorithm. The blending weight is applied to the neural network super-resolution algorithm, so as to produce an output video.

Abstract: A semiconductor structure includes a die embedded in a molding material, the die having die connectors on a first side; a first redistribution structure at the first side of the die, the first redistribution structure being electrically coupled to the die through the die connectors; a second redistribution structure at a second side of the die opposing the first side; and a thermally conductive material in the second redistribution structure, the die being interposed between the thermally conductive material and the first redistribution structure, the thermally conductive material extending through the second redistribution structure, and the thermally conductive material being electrically isolated.

Abstract: A method for testing burning performance of a dark-colored cigarette using a dark-colored cigarette paper is provided. The dark-colored cigarette paper has a grayscale less than 255. The method includes: simulating, by a robotic arm, a cigarette smoking process and environment; acquiring, by a full-vision camera system, an image of a burn line and ash column region of the dark-colored cigarette; and analyzing a burning performance indicator of the dark-colored cigarette according to coordinate information of the burn line and ash column region. The method is based on a surface reflection characteristic of the dark-colored cigarette paper and a principle of optical reflection to light and highlight an edge of the dark-colored cigarette sample by a light source at a certain angle from a side. In this way, the method forms a chromatic aberration to localize the dark-colored cigarette sample, thereby testing the burning performance of the dark-colored cigarette sample.

Abstract: Provided are FinFET devices and methods of forming the same. A dummy gate having gate spacers on opposing sidewalls thereof is formed over a substrate. A dielectric layer is formed around the dummy gate. An upper portion of the dummy gate is removed and upper portions of the gate spacers are removed, so as to form a first opening in the dielectric layer. A lower portion of the dummy gate is removed to form a second opening below the first opening. A metal layer is formed in the first and second openings. The metal layer is partially removed to form a metal gate.

Abstract: A method includes bonding a first device die and a second device die to an interconnect die. The interconnect die includes a first portion over and bonded to the first device die, and a second portion over and bonded to the second device die. The interconnect die electrically connects the first device die to the second device die. The method further includes encapsulating the interconnect die in an encapsulating material, and forming a plurality of redistribution lines over the interconnect die.

Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a base structure. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching the channel structures. The semiconductor device structure further includes a gate stack wrapped around each of the channel structures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. In addition, the semiconductor device structure includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.

Abstract: A computer-implemented method for aligning a sensor to a vehicle includes receiving a first frame of measurement from the sensor which includes a first point cloud. One or more clusters Ci representing one or more objects or the ground are segmented. A first set of feature vectors fi is computed for each cluster Ci. Based on the first set of feature vectors fi a second set of feature vectors fi? is predicted respectively using an initial transformation. A third set of feature vectors fj is computed for a second frame with a second point cloud with clusters Cj. A pair of matching clusters is identified from Ci and Cj. A feature distance between the matching clusters is computed. An alignment transformation is computed by updating the initial transformation based on the feature distance. The method further includes aligning the sensor and the vehicle based on the alignment transformation.

Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: A method includes placing a plurality of package components over a carrier, encapsulating the plurality of package components in an encapsulant, forming a light-sensitive dielectric layer over the plurality of package components and the encapsulant, exposing the light-sensitive dielectric layer using a lithography mask, and developing the light-sensitive dielectric layer to form a plurality of openings. Conductive features of the plurality of package components are exposed through the plurality of openings. The method further includes forming redistribution lines extending into the openings. One of the redistribution lines has a length greater than about 26 mm. The redistribution lines, the plurality of package components, the encapsulant in combination form a reconstructed wafer.

Abstract: Provided herein are Bridged Compounds having the following structures: wherein R1a, R1b, R1c, R1d, R2a, R2b, R2c, R2d, R3a, R3b, R3c, R3d, R4, R5, R6, R7, R8, m1, m2, m3, n2, n3, n4, q, X1, X2, Y1, Y2, L1 and ring A are as defined herein, compositions comprising an effective amount of a Bridged Compound, and methods for treating or preventing various diseases, e.g., pancreatic cancer, or a condition treatable or preventable by inhibition of the function of KRAS protein. In another aspect, a Bridged Compound is useful for treating or preventing a condition treatable or preventable by inhibition of the function of KRAS protein with G12D mutation. In another aspect, a Bridged Compound is useful for treating or preventing a condition treatable or preventable by inhibition of a RAS/MAPK pathway.