Abstract: A blowing machine used to produce containers of correctly temperatured preforms in blowing stations including correctly temperatured blow molds, having functional get-up components such as at least electric servomotors assigned to at least the blowing stations to control and/or monitor secondary functions of functional get-up components during production. In order to bring at least some of said functional get-up components for secondary functions to the correct temperature, an electrically operated, controllable liquid temperature control system is supplied by at least one temperature control device and is integrated into the blowing machine and guided through the functional get-up components.

Abstract: A stretch-blow molding machine having at least one blow molding station, in which a split blow mold, an adjustable blow nozzle with a valve section, a stretching rod with a stretching rod drive system, and an electronic control unit are provided, the electronic control unit arranged in the blow molding station is equipped with hardware and software for selectively operating the blow molding station with a combination of a cam drive and a pneumatic drive, or a combination of an electric servo drive and a pneumatic drive, or only an electric servo drive in the stretching rod drive system.

Abstract: A device with a precharge/homogenize circuit. One embodiment provides at least one switching element is acting as a homogenizer, and at least one switching element is acting as a precharger. The diffusion region of the switching element acting as a homogenizer is separated from the diffusion region of the switching element acting as a precharger.

Abstract: A semiconductor memory has a plurality of read amplifiers to which a pair each of two complementary bit lines is connected, wherein the semiconductor memory includes at least one switching element each for each bit line, by which at least a partial section of the bit line may be electrically decoupled from the read amplifier, and wherein the semiconductor memory controls the first switching element so that the first switching element, when reading out and/or refreshing any memory cell connected to the bit line, temporarily electrically decouples at least the partial section of the bit line from the read amplifier.

Abstract: A semiconductor memory having read amplifier strips having a plurality of read amplifiers and having memory cell fields which have a plurality of memory cells connected to bit lines is disclosed. The read amplifier strips include at least two outer read amplifier strips between which the remaining read amplifier strips and the memory cell fields are arranged, wherein adjacent to at least one of the outer read amplifier strips, a reference circuit field is arranged, which has reference lines and reference circuit elements connected thereto, and wherein the reference lines are shorter than the bit lines of the memory cell fields.

Abstract: A device comprising: a sub-base having a first end, a second end, a top side (310), a left side, a right side and a width, a first (324), second (326), and third passageway (328) formed in the sub-base where the first, second, and third passageway run from the left side through to the right side; a first (446) and second opening (448) formed in the second end; a first, second, third, fourth and fifth slot (314, 316, 318, 320, 322) formed in a row in the top side of the sub-base where a long axis of the slots run from the right side towards the left side and where the first slot (314) couples to the first passageway (324), the third slot (318) couples to the second passageway (326), and the fifth slot (322) couples to the third passageway (328); a means for smoothly directing fluid flow from the second opening (448) to the second slot (316); a means for smoothly directing fluid flow from the first opening (446) to the fourth slot (320).

Abstract: A flow sensor (100) is disclosed provided with a body (102) with a first opening (128) and a second opening (130) and a flow pathway (103) coupling the first opening (128) to the second opening (130). At least one thermal sensor (140) is located in the flow pathway (103) between the first opening (128) and the second opening (130). A first turbulence inducer (114, 116, or 118) is located between the first opening (128) and the at least one thermal sensor (140). The turbulence inducer consists of a mesh of joined beams that define a plurality of voids.

Abstract: A semiconductor memory device and method with a changeable substrate potential. One embodiment provides for operating a semiconductor memory device having at least one read or write/sense amplifier. The method includes changing the substrate potential of the read or write/sense amplifier.

Abstract: The invention relates to an electromechanical motor having a stator that has a drive unit and a frame component in which the drive unit is held, and a sliding element that is constructed such that, actuated by the drive unit, it performs a movement with respect to the stator in a direction of translation, wherein the drive unit has at least one electromechanical drive element that extends in the direction of translation and a power transmission element that is constructed so as to transmit a movement of the drive element to the sliding element. The sliding element has a supporting component and a drive rail, the drive rail extending in the direction of translation and interacting with the power transmission element and the drive rail being held at both its end faces in the supporting component, and between the supporting component and the frame component of the stator, there is a bearing for supporting the sliding element in the frame component.

Abstract: An integrated circuit with buried control line structures. In one embodiment, the control lines are subdivided into sections, wherein regions free of switching transistors are provided at intervals along the control lines. Connections for feeding the control potentials into the sections of the control lines are provided at least in a subset of the regions free of switching transistors. The isolations lines are connected to one another by an interconnect running transversely with respect to the control lines.

Abstract: A directly coupled linear drive having a drive unit and a sliding element that are disposed in a frame, the sliding element, actuated by the drive unit, being capable of effecting a movement in a direction of translation with respect to the frame and having a blocking device for blocking the sliding element in the frame in the event of a shock load to the sliding element, the blocking device having a body coupled to the sliding element that absorbs the shock load and is disposed such that the shock load of the body counteracts the shock load of the sliding element.

Abstract: A semiconductor memory has a plurality of read amplifiers to which a pair each of two complementary bit lines is connected, wherein the semiconductor memory includes at least one switching element each for each bit line, by which at least a partial section of the bit line may be electrically decoupled from the read amplifier, and wherein the semiconductor memory controls the first switching element so that the first switching element, when reading out and/or refreshing any memory cell connected to the bit line, temporarily electrically decouples at least the partial section of the bit line from the read amplifier.

Abstract: An electromechanical motor, comprising a stator, including a drive unit and a frame portion, the frame portion holding the drive unit. The motor includes a shuttle adapted to be moved relative to the stator in a displacement direction, the shuttle movement being controlled by the drive unit and where the drive unit comprises at least one electromechanical drive element, extending along said displacement direction, and a drive body adapted to transfer a movement of the drive element onto the shuttle. The motor includes a sensor connected to the drive element and adapted to sense an electric or magnetic signal generated by the drive element in response to mechanical stress being applied to the drive element and to output a sensor signal.

Abstract: The invention relates to an electromechanical motor having a stator that has a drive unit and a frame component in which the drive unit is held, and a sliding element that is constructed such that, actuated by the drive unit, it performs a movement with respect to the stator in a direction of translation, wherein the drive unit has at least one electromechanical drive element that extends in the direction of translation and a power transmission element that is constructed so as to transmit a movement of the drive element to the sliding element. The sliding element has a supporting component and a drive rail, the drive rail extending in the direction of translation and interacting with the power transmission element and the drive rail being held at both its end faces in the supporting component, and between the supporting component and the frame component of the stator, there is a bearing for supporting the sliding element in the frame component.

Abstract: An electropneumatic actuator system for operating assemblies of an internal combustion engine includes a housing, in which an actuator is movably accommodated, which in turn is configured to be hollow and includes an aeration channel and a deaeration channel. A control slide valve is assigned to the actuator which is operated by a magnetic coil and which aerates, deaerates or closes a pressure chamber of the housing as a function of the relative position of the actuator.

Abstract: An integrated circuit comprises a first conductive lines and second lines as well as contact structures being in contact with the first and second conductive lines. The first conductive lines are arranged in a first metallization level, and second conductive lines are arranged in a second metallization level arranged above the first metallization level. The second conductive lines are arranged above the contact structures, and a pitch of neighboring contact structures is equal to a pitch of neighboring second conductive lines. The distance between neighboring contact structures is smaller than 100 nm.

Abstract: An integrated circuit includes a bit line pair having two bit lines, a sense amplifier having at least one transistor, the sense amplifier amplifying a charge difference between the bit lines of the bit line pair; and a control unit connected to a substrate terminal of the at least one transistor, the control unit applying a substrate potential dependent on an operating state of the integrated circuit to the substrate of the at least one transistor.

Abstract: A device for accessing a logical content of a memory cell, the memory cell including a cell capacity for storing a charge related to the logical content, wherein the cell capacity is connected between a bit line having a bit line capacity and a reference potential, the device including: a reference node having a reference capacity being smaller than the bit line capacity; and a circuit for changing a potential of the bit line and the reference node, respectively, in case of a read or write access of the memory cell, wherein the change of the potential of the bit line is conducted with a first current and the change of the potential of the reference node is conducted with a second current, wherein the first current is greater than the second current.

Abstract: A device with a precharge/homogenize circuit. One embodiment provides at least one switching element is acting as a homogenizer, and at least one switching element is acting as a precharger. The diffusion region of the switching element acting as a homogenizer is separated from the diffusion region of the switching element acting as a precharger.

Abstract: A device for accessing a logical content of a memory cell, the memory cell including a cell capacity for storing a charge related to the logical content, wherein the cell capacity is connected between a bit line having a bit line capacity and a reference potential, the device including: a reference node having a reference capacity being smaller than the bit line capacity; and a circuit for changing a potential of the bit line and the reference node, respectively, in case of a read or write access of the memory cell, wherein the change of the potential of the bit line is conducted with a first current and the change of the potential of the reference node is conducted with a second current, wherein the first current is greater than the second current.