Abstract: In a friction transmission belt including a rubber layer forming a pulley contact surface, the rubber layer includes a rubber composition containing hydrophilic inorganic filler and a sliding-resistant material. The sliding-resistant material protrudes from the pulley contact surface, and is at least one of hydrophobic resin particles and hydrophobic resin fibers having an official regain of 0.4% or below, and in the rubber composition, a content of the hydrophilic inorganic filler with respect to 100 parts by mass of the rubber component is 35 parts by mass or more.

Abstract: In a friction transmission belt including a rubber layer forming a pulley contact surface, the rubber layer includes a rubber composition containing polyolefin particles and an inorganic filler. In the rubber composition, a total content of the polyolefin particles and the inorganic filler with respect to 100 parts by mass of a rubber component is 85 parts by mass or more.

Abstract: An integrated trench capacitor and method for making the trench capacitor is disclosed. The method includes forming a trench in a silicon layer, forming a first dielectric on the exposed surface of the trench, performing an anisotropic etch of the first dielectric to expose silicon at the bottom of the trench, implanting a dopant into exposed silicon at the bottom of the trench, forming a first polysilicon layer over the first dielectric, forming a second dielectric over the first polysilicon layer, and forming a second polysilicon layer over the second dielectric to fill the trench.

Abstract: A device includes a transistor formed on a substrate. The transistor includes an n-type drain contact layer, an n-type drain layer, an oxide layer, a p-type body region, a p-type terminal region, body trenches, and terminal trenches. The n-type drain contact layer is near a bottom surface of the substrate. The n-type drain layer is positioned on the n-type drain contact layer. The oxide layer circumscribes a transistor region. The p-type body region is positioned within the transistor region. The p-type terminal region extends from under the oxide layer to an edge of the transistor region, thereby forming a contiguous junction with the p-type body region. The body trenches is within the transistor region and interleaves with the p-type body region, whereas the terminal trenches is outside the transistor region and interleaves with the p-type terminal region.

Abstract: Embodiments of a deep trench capacitor are disclosed. In one example a plurality of deep trenches is located in a first region of a semiconductor wafer, the first region having a first conductivity type. A corresponding dielectric layer is located on a surface of each of the plurality of deep trenches, and a corresponding doped polysilicon filler is located within each of the dielectric layers. Dielectric-filled trenches are located between each of the dielectric layers and the surface of the semiconductor wafer.

Abstract: A shaped structure and a fabric material are set in a belt mold such that the shaped structure and the fabric material are respectively positioned inside and outside with respect to each other. While each of compression layer-forming portions comprised of ridges of the shaped structure covered with the fabric material is fitted in an associated one of compression layer-shaping grooves of the belt mold, the shaped structure is pressed toward the belt mold and heated to be crosslinked, and integrated with the fabric material, thereby molding a cylindrical belt slab. The belt slab is cut into ring-shaped pieces having two or more of the compression layer-forming portions.

Abstract: A production method of a raw edge V-belt uses a belt mold having a plurality of compressed rubber layer-shape grooves arranged adjacent to one another. A shaped structure having a plurality of compressed rubber layer-forming portions on an outer peripheral surface is crosslinked to form a belt slab, while the compressed rubber layer-forming portions fitted in the respective compressed rubber layer-shape grooves of the belt mold. The belt slab is cut into ring-shaped pieces such that one ring-shaped piece corresponds to one compressed rubber layer-forming portion.

Abstract: A production method of a V-belt uses a belt mold having a plurality of compression layer-shape grooves arranged adjacent to one another in a groove width direction. A shaped structure having a plurality of ridges on an outer peripheral surface is crosslinked and combined with a fabric material to form a belt slab, while the compression layer-forming portions, which are the ridges covered with the fabric material, being fitted in the respective compression layer-shape grooves of the belt mold. The belt slab is cut into ring-shaped pieces such that one ring-shaped piece corresponds to one compression layer-forming portion.

Abstract: In a friction transmission belt including a rubber layer forming a pulley contact surface, the rubber layer includes a rubber composition containing polyolefin particles and an inorganic filler. In the rubber composition, a total content of the polyolefin particles and the inorganic filler with respect to 100 parts by mass of a rubber component is 85 parts by mass or more.

Abstract: In a friction transmission belt including a rubber layer forming a pulley contact surface, the rubber layer includes a rubber composition containing hydrophilic inorganic filler and a sliding-resistant material. The sliding-resistant material protrudes from the pulley contact surface, and is at least one of hydrophobic resin particles and hydrophobic resin fibers having an official regain of 0.4% or below, and in the rubber composition, a content of the hydrophilic inorganic filler with respect to 100 parts by mass of the rubber component is 35 parts by mass or more.

Abstract: A method of forming an integrated circuit includes forming ?1 hard mask layer on a device layer on a BOX layer of a SOI substrate. A patterned masking layer is used for a trench etch to simultaneously form larger and smaller area trenches through the hard mask layer, device layer and the BOX layer. A dielectric liner is formed for lining the larger and smaller area trenches. A dielectric layer is deposited for completely filling the smaller area trenches and only partially filling the larger area trenches. The larger area trenches are bottom etched through the dielectric layer to provide a top side contact to the handle portion. The handle portion at a bottom of the larger area trenches is implanted to form a handle contact, and the larger area trenches are completely filled with an electrically conductive layer to form a top side ohmic contact to the handle contact.

Abstract: A deep trench capacitor and a method for providing the same in a semiconductor process are disclosed. The method includes forming a plurality of deep trenches in a first region of a semiconductor wafer, the first region having well doping of a first type. A dielectric layer is formed on a surface of the plurality of deep trenches and a doped polysilicon layer is deposited to fill the plurality of deep trenches, with the doped polysilicon being doped with a dopant of a second type. Shallow trench isolation is formed overlying the dielectric layer at an intersection of the dielectric layer with the surface of the semiconductor wafer.

Abstract: Provided are a curing agent for epoxy resins, which is a curing agent capable of curing an epoxy resin at room temperature, and which can form a cured product (cured coating film) having excellent adhesion even to a substrate which is not in an environment completely dried, and an epoxy resin composition obtained using the same. A curing agent for epoxy resins, containing (a1) an aromatic amine, (a2) an aliphatic amine having an aromatic ring or a cycloalkane ring, and (a3) a curing accelerator, and an epoxy resin composition containing the curing agent and an epoxy resin.

Abstract: A friction transmission belt has a rubber layer forming a pulley contacting portion. The rubber layer is made of a rubber composition containing a crosslinked rubber component and crosslinked polyolefin particles. Examples of the crosslinked polyolefin particles can contain ultrahigh molecular weight polyolefin particles having an average molecular weight of 500,000 or more.

Abstract: A device includes a transistor formed on a substrate. The transistor includes an n-type drain contact layer, an n-type drain layer, an oxide layer, a p-type body region, a p-type terminal region, body trenches, and terminal trenches. The n-type drain contact layer is near a bottom surface of the substrate. The n-type drain layer is positioned on the n-type drain contact layer. The oxide layer circumscribes a transistor region. The p-type body region is positioned within the transistor region. The p-type terminal region extends from under the oxide layer to an edge of the transistor region, thereby forming a contiguous junction with the p-type body region. The body trenches is within the transistor region and interleaves with the p-type body region, whereas the terminal trenches is outside the transistor region and interleaves with the p-type terminal region.

Abstract: A friction transmission belt includes a belt body, formed of a rubber composition, looped over a pulley, and transmitting power. The friction transmission belt includes a reinforcing fabric wrapping at least a surface, of the belt body, in contact with the pulley. The reinforcing fabric is a knitted fabric, and on the surface of the belt body in contact with the pulley, a wale direction of the reinforcing fabric is a direction in which the friction transmission belt travels.

Abstract: A deep trench capacitor and a method for providing the same in a semiconductor process are disclosed. The method includes forming a plurality of deep trenches in a first region of a semiconductor wafer, the first region having well doping of a first type. A dielectric layer is formed on a surface of the plurality of deep trenches and a doped polysilicon layer is deposited to fill the plurality of deep trenches, with the doped polysilicon being doped with a dopant of a second type. Shallow trench isolation is formed overlying the dielectric layer at an intersection of the dielectric layer with the surface of the semiconductor wafer.

Abstract: An integrated trench capacitor and method for making the trench capacitor is disclosed. The method includes forming a trench in a silicon layer, forming a first dielectric on the exposed surface of the trench, performing an anisotropic etch of the first dielectric to expose silicon at the bottom of the trench, implanting a dopant into exposed silicon at the bottom of the trench, forming a first polysilicon layer over the first dielectric, forming a second dielectric over the first polysilicon layer, and forming a second polysilicon layer over the second dielectric to fill the trench.

Abstract: A method of forming a semiconductor device includes etching a high aspect ratio, substantially perpendicular trench in a semiconductor region doped with a first dopant having first conductivity type and performing a first cycle for depositing silicon doped with a second dopant on an inner surface of the high aspect ratio, substantially perpendicular trench, the first cycle comprising alternately depositing silicon at a first constant pressure and etching the deposited silicon at an etching pressure that ramps up from a first value to a second value, the second dopant having a second conductivity type that is opposite from the first conductivity type.

Abstract: A semiconductor device contains a vertical MOS transistor having a trench gate in trenches extending through a vertical drift region to a drain region. The trenches have field plates under the gate; the field plates are adjacent to the drift region and have a plurality of segments. A dielectric liner in the trenches separating the field plates from the drift region has a thickness great than a gate dielectric layer between the gate and the body. The dielectric liner is thicker on a lower segment of the field plate, at a bottom of the trenches, than an upper segment, immediately under the gate. The trench gate may be electrically isolated from the field plates, or may be connected to the upper segment. The segments of the field plates may be electrically isolated from each other or may be connected to each other in the trenches.