Abstract: A vehicle mirror comprises a mirror surface; a plate pivot 110 which tilts the mirror surface by tilting the plate pivot itself, a housing 120 which covers the plate pivot facing to the rear surface of the mirror surface across the plate pivot, which possesses a bottom portion substantially parallel to the plate pivot, and a curved side wall which is brought into contact with the side surface of the plate pivot to guide the side surface; an adjust nut 108 which is provided between the housing and the plate pivot, and which moves toward or backward to the rear surface of the pivot to tilt the plate pivot; a rotational variable resistor 118 which is provided between the housing and the plate pivot, and whose resistance value is varied depending on the rotation amount of a rotor that rotates depending upon the movement of the adjust nut; and a signal outputting portion 124, which outputs a signal corresponding to the titled angle of the mirror surface depending upon the resistance of the rotational variable r

Abstract: A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film.

Abstract: A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film.

Abstract: An inner mirror 1 which includes: a mirror body 10 tiltably mounted on a front end of a stay S that extends from a member forming a vehicle room; a mirror 20 for rear viewing, disposed at a front side of the mirror body 10; and covers 30, 40 disposed at a back side of the mirror body 10, wherein a space enabling housing of in-vehicle articles E1, E2 is formed by the mirror body 10 and the covers 30, 40.

Abstract: A vehicle environment monitoring device comprises an imaging section for taking image data of an environment of an automobile, the image including at least two types of colors; a setting section for setting a specific area of the image data obtained by the imaging section, wherein the specific area has a strip shape longer in, and parallel to, a horizontal direction of a frame image and includes at least two types of colors; an extraction section for taking in image data of the specific area in units of one or a plurality of frame images taken by the imaging section in time series and extracting moving vector information based on the image data of the specific area; and a detection section for detecting a second vehicle which is present in an environment of a first vehicle having the vehicle environment monitoring device mounted thereon, based on the moving vector information.

Abstract: In a mirror device with an antenna of the present invention the antenna is placed in a mirror housing where a mirror configured to reflect a rear of a vehicle is attached, a grounding portion at least part of which is composed of a conductive material is provided in the mirror housing, and the antenna is electrically connected to the conductive material of the grounding portion.

Abstract: A deflection yoke is used for a cathode ray tube (CRT) including a glass tube having a screen surface and a straight portion for accommodating an electron gun. The deflection yoke includes a main deflection yoke including first and second horizontal deflecting coils and first and second vertical deflecting coils, and a sub-deflection yoke provided at a side of the main deflection yoke towards the electron gun of the CRT. The first and second horizontal deflecting coils have substantially saddle shapes and includes first and second coil-connection-wire sections and first and second horizontal deflection sections, respectively. The first and second coil-connection-wire sections are wound in a direction perpendicular to a tube axis of the CRT and along the straight portion, respectively. The first and second horizontal deflection sections are located towards the screen surface from the first and the second coil-connection-wire sections, respectively.

Abstract: A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film.

Abstract: Two images P1 and P2 having different backgrounds are input into a transparency calculation processing part AT. The transparency calculation processing part AT obtains a transparency image PT from P1 and P2. Next, noise is removed from the transparency image PT as necessary. A color calculation processing part AC generates a color image PC from P1 and P2. Next, a cutting processing part AR cuts unnecessary parts from the transparency image PT and the color image PC. Finally, an overlaying processing part AS overlays the object O on a background image PZ by using PT, PC and PZ.

Abstract: A semiconductor storage device is provided, which inhibits shorts between cells to improve operational reliability and contributes to high-speed operation. An active region (7) where DRAM cells are formed is defined by an isolation trench (40) formed in a silicon substrate (1). The isolation trench (40) has an isolation insulating film (4) formed therein. Each DRAM cell includes a MOS transistor having a gate electrode (12) with sidewalls (13), and a capacitor having an upper electrode (22) with sidewalls (23). A recess (41) is formed in the upper portion of the isolation trench (40), and the upper electrode (22) of the capacitor has a buried portion buried in the recess (41). The outer edge (E1) of the buried portion of the upper electrode (22) is located inside the outer edge (E2) of the sidewalls (23).

Abstract: A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film.

Abstract: An image pickup apparatus which is equipped in a vehicle includes an infrared light emitter, an infrared camera and an infrared light sensor. The infrared light emitter irradiates an infrared light towards a surrounding area of the vehicle. The infrared camera performs an image pickup by receiving a reflected infrared light, which is emitted from the infrared light emitter and is reflected by an obstacle present in the surrounding area. The infrared light sensor detects a pulse light ranging from near-infrared region to infrared region, which is irradiated from an oncoming vehicle. The infrared camera delays performing the image pickup when the infrared light sensor detects the pulse light.

Abstract: A vehicle mirror comprises: a mirror surface; an actuator 100 which tilts the mirror surface; a plate pivot 110, which changes its direction together with the mirror surface; a spring 112, which applies a resilient force to the plate pivot 110 in the direction substantially vertical to the mirror surface; a guide spring 114 which is fitted to the end of the spring 112 at the side far from the interlocking member; a semiconductor pressure sensor 116, which is in contact with the guide spring at substantially one point so as to detect a load loaded on the one point from the pressing member; and a signal outputting portion which outputs a signal depending upon the tilted angle of the mirror surface based on the force detected by the semiconductor pressure sensor 116.

Abstract: A vehicle mirror comprises a mirror surface; a plate pivot 110 which tilts the mirror surface by tilting the plate pivot itself, a housing 120 which covers the plate pivot facing to the rear surface of the mirror surface across the plate pivot, which possesses a bottom portion substantially parallel to the plate pivot, and a curved side wall which is brought into contact with the side surface of the plate pivot to guide the side surface; an adjust nut 108 which is provided between the housing and the plate pivot, and which moves toward or backward to the rear surface of the pivot to tilt the plate pivot; a rotational variable resistor 118 which is provided between the housing and the plate pivot, and whose resistance value is varied depending on the rotation amount of a rotor that rotates depending upon the movement of the adjust nut; and a signal outputting portion 124, which outputs a signal corresponding to the titled angle of the mirror surface depending upon the resistance of the rotational variable r

Abstract: A mirror (18) having a specular surface changeable in orientation using an actuator (16) is provided with an angle detection capability at reduced cost. A plate pivot (10) can change its orientation together with the specular surface so as to orient in a direction in which the specular surface is orienting. A slide block (20) is stressed toward the plate pivot (10) so that rotation of the plate pivot (10) causes the slide block (20) to move in a direction substantially perpendicular to the specular surface by an amount proportional to an amount of the rotation of the plate pivot (10). A magnet (26) moves in the direction of movement of the slide block (20) by an amount proportional to an amount of the movement of the slide block (20), and a magnetism sensing element (202) detects magnetism derived from the magnet (26) and outputs a signal corresponding to the amount of movement of the magnet (26).

Abstract: A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film.

Abstract: A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film.

Abstract: The object of the present invention is to suppress the increase of the contact resistance at the interface between the metal layer and the silicon plug in the wiring structure in which a metal layer is formed on and connected to a silicon plug. For its achievement, a lower semiconductor layer (drain) of a vertical-type MISFET is connected to an intermediate metal layer via an underlying plug composed of a polycrystalline silicon film, and a trap layer composed of a silicon nitride (TiN) film is formed on a part of the surface of the intermediate metal layer so as to surround the plug. The trap layer is formed in order to prevent an undesired high-resistance oxide layer from being formed at the interface between the plug and the intermediate metal layer.

Abstract: A CVD device (100) used for depositing a silicon nitride has a structure in which a hot wall furnace (103) for thermally degrading a source gas and a chamber (101) for forming a film over a surface of a wafer (1) are separated from each other. The hot wall furnace (103) for thermally degrading the source gas is provided above the chamber (101), and a heater (104) capable of setting the inside of the furnace at a high temperature atmosphere of approximately 1200° C. is provided at the outer periphery thereof. The source gas, supplied to the hot wall furnace (103) through pipes (105) and (106), is thermally degraded in this furnace in advance, and degraded components thereof are supplied on a stage (102) of the chamber (101) to form a film on the surface of the wafer (1).

Abstract: An RF converter circuit 11 that constitutes a video signal superposing/power deriving unit 100 converts video signals generated from images taken by a surveillance camera 10, which derives a direct current voltage as a driving power from an antenna lead-in wire 6 through a filter circuit (LPF circuit 12), to radio-frequency signals. The radio-frequency signals are transmitted through the antenna lead-in wire 6 to a television receiver 2. Images taken by the surveillance camera 1 can be viewed on the television receiver 2 only by selecting the channel assigned to the surveillance camera 1. Accordingly, the driving power for the surveillance camera 1 is not relied upon a solar battery or secondary batteries, and wiring work therefor may be simplified.