Abstract: In order to fill in an isolation trench formed on a semiconductor substrate, the isolation trench is filled up to a predetermined middle position with a coating film first, and then an insulating film formed by a CVD method is deposited thereon. Additionally, the insulating film is polished by a CMP method, for example, so as to be ground. Thus, the isolation trench is filled with stacked films of the coating film and the insulating film. Further, an electrode pattern and a dummy pattern are formed on the semiconductor substrate, and the trench formed between these patterns is filled up to a predetermined middle position in its depth direction with the coating film. Then, a remaining depth portion of the trench is filled with the insulating film formed by a CVD method.

Abstract: In response to an operation of reversing a vehicle, a tilt motor is rotated by a specific amount in a normal direction to tilt a mirror angle to a position that permits a mirror to provide the driver with a view of the area near a rear wheel of the vehicle, while in response to an operation of releasing the reverse gear, the tilt motor is rotated by a specific amount in a reverse direction to restore the tilt angle to a normal position thereof. During the operations, a high-frequency signal generated upon switching a brush of the motor is detected using a pickup coil to determine an amount of rotation of the motor. One and the same pickup coil may be used for detection during both of normal and reverse rotations. A voltage of a battery 3 is stabilized in a motor power stabilizing circuit 10, and supplied via a motor driving circuit 8 to a tilt motor M2. Polarity of the voltage outputted from the motor power stabilizing circuit 10 is fixed.

Abstract: A method of manufacturing a DRAM/logic-embedded semiconductor device capable of achieving low resistance gate electrodes in the logic device is provided. After gate structures (6a, 6b), in which doped polysilicon films (4a, 4b) and TEOS oxide films (5a, 5b) are stacked on top of the other, are formed in DRAM-forming and logic-forming regions, impurity diffusion regions (7a1, 7a2, 7b) are formed in the respective regions. Then, sidewalls (8a, 8b) are formed on the side surfaces of the gate structures (6a, 6b). After source/drain regions (9) are formed in the logic-forming region, the TEOS oxide film (5b) in the logic forming region is removed. Subsequent silicidation produces cobalt silicide layers (50a1, 50a2, 50b1, 50b2) on the impurity diffusion regions (7a1, 7a2) in the DRAM-forming region and on the source/drain regions (9) and the doped polysilicon films (4b) in the logic-forming region.

Abstract: Described is a manufacturing method of a semiconductor integrated circuit device by depositing a silicon nitride film to give a uniform thickness over the main surface of a semiconductor wafer having a high pattern density region and a low pattern density region. This is attained by, upon depositing a silicon nitride film over a substrate having a high gate-electrode-pattern density region and a low gate-electrode-pattern density region by using a single-wafer cold-wall thermal CVD reactor, setting a flow rate ratio of ammonia (NH3) to monosilane (SiH4) greater than that upon deposition of a silicon nitride film over a flat substrate.

Abstract: A first silicide protection film is deposited on a silicon substrate, a first resist pattern having an opening at a prescribed position is formed, a portion of the first silicide protection film exposed from the opening of the first resist pattern is removed to form a first opening in the first silicide protection film, an N+ diffusion layer is formed in a portion of the silicon substrate exposed from the first opening, the first resist pattern is removed, and a metallic film is deposited to form a first silicide layer on the N+ diffusion layer according to a silicide process.

Abstract: A mirror assembly 3 is detachably attached to an open side 2a of a mirror housing 2 in an exterior rearview mirror system (exterior mirror) 1 that is mounted outside a vehicle body. A mirror 4 in the mirror assembly 3 is comprised of a transparent glass plate 5 with a reflective coating 6 spread over a back surface of the transparent glass plate 5, through which reflective coating 6 electric current passes to produce an antiglare effect. The electric current passing through the reflective coating 6 is controlled using a sensors 8, 9 that detect intensity of light from surroundings and rearward of the vehicle body, and an electronic control circuit 10 that compares intensity of light detected in each sensor 8, 9 to automatically adjust an antiglare level of reflection in the reflective coating 6. A battery 11 that is connected with the electronic control circuit 10 and supplies electric current into the reflective coating 6 is provided in the mirror housing 2.

Abstract: A rearview mirror includes a stay 12, 35 fixed on and extending downward from a ceiling or a windshield 31 of a vehicle or fixed by a desorbable base 32 mounted on an adhesive portion 33 of the windshield 31, and a mirror body 11, 40 mounted at the bottom of the stay 12, 35 with its angle adjustable. The stay 12 or the base 32 has a recess portion 12a, 32a. The recess portion 12, 35 can be mounted later with one or more radio antenna units13a, 13b, 13c.

Abstract: The present invention provides an inner mirror with a built-in antenna in which an antenna angle remains unchanged regardless of adjustment of a mirror angle. The upper end of a stay 10 is mounted on a ceiling in a vehicle room. A pivot 14 is formed at the lower end of the stay 10. The pivot 14 is inserted into a mirror body 16 and fitted into a pivot supporting pmember 20 to support the mirror body 16 pivotally in three-dimensional directions. An antenna 34 is mounted on one side of the pivot 14 through shafts 28 and 30. Since the antenna 34 is mounted on the pivot 14, the angle of the antenna 34 remains unchanged, even though the mirror angle adjustment is performed by pivoting the mirror body 16.

Abstract: Two images P1 and P2 having different backgrounds are input into a transparency calculation processing part AT. The transparency calculation processing part AT obtains a transparency image PT from P1 and P2. Next, noise is removed from the transparency image PT as necessary. A color calculation processing part AC generates a color image PC from P1 and P2. Next, a cutting processing part AR cuts unnecessary parts from the transparency image PT and the color image PC. Finally, an overlaying processing part AS overlays the object O on a background image PZ by using PT, PC and PZ.

Abstract: Gate wiring is formed serving as first gate wiring in a DRAM-forming area, and gate wiring 33 is formed as second gate wiring in a logic-forming area. Then, cobalt silicide layer 37 is formed over a source/drain diffused layer in the DRAM-forming area, and cobalt silicide layer is formed over a source/drain diffused layer and the gate wiring in the logic-forming area. Such formation of the cobalt silicide layer reduces the resistance of the gate wiring and the contact resistance, and thereby enables the high-speed operation of a semiconductor device even if the device is microfabricated.

Abstract: The present invention relates to an image pickup apparatus, which is equipped in a vehicle and is used for obtaining an image of the surrounding area by performing the image pickup.

Abstract: A method of manufacturing a DRAM/logic-embedded semiconductor device capable of achieving low resistance gate electrodes in the logic device is provided. After gate structures (6a, 6b), in which doped polysilicon films (4a, 4b) and TEOS oxide films (5a, 5b) are stacked on top of the other, are formed in DRAM-forming and logic-forming regions, impurity diffusion regions (7a1, 7a2, 7b) are formed in the respective regions. Then, sidewalls (8a, 8b) are formed on the side surfaces of the gate structures (6a, 6b). After source/drain regions (9) are formed in the logic-forming region, the TEOS oxide film (5b) in the logic forming region is removed. Subsequent silicidation produces cobalt silicide layers (50a1, 50a2, 50b1, 50b2) on the impurity diffusion regions (7a1, 7a2) in the DRAM-forming region and on the source/drain regions (9) and the doped polysilicon films (4b) in the logic-forming region.

Abstract: A mirror assembly 3 is detachably attached to an open side 2a of a mirror housing 2 in an exterior rearview mirror system (exterior mirror) 1 that is mounted outside a vehicle body. A mirror 4 in the mirror assembly 3 is comprised of a transparent glass plate 5 with a reflective coating 6 spread over a back surface of the transparent glass plate 5, through which reflective coating 6 electric current passes to produce an antiglare effect. The electric current passing through the reflective coating 6 is controlled using a sensors 8, 9 that detect intensity of light from surroundings and rearward of the vehicle body, and an electronic control circuit 10 that compares intensity of light detected in each sensor 8, 9 to automatically adjust an antiglare level of reflection in the reflective coating 6. A battery 11 that is connected with the electronic control circuit 10 and supplies electric current into the reflective coating 6 is provided in the mirror housing 2.

Abstract: A first silicide protection film is deposited on a silicon substrate, a first resist pattern having an opening at a prescribed position is formed, a portion of the first silicide protection film exposed from the opening of the first resist pattern is removed to form a first opening in the first silicide protection film, an N+ diffusion layer is formed in a portion of the silicon substrate exposed from the first opening, the first resist pattern is removed, and a metallic film is deposited to form a first silicide layer on the N+ diffusion layer according to a silicide process.

Abstract: Described is a manufacturing method of a semiconductor integrated circuit device by depositing a silicon nitride film to give a uniform thickness over the main surface of a semiconductor wafer having a high pattern density region and a low pattern density region. This is attained by, upon depositing a silicon nitride film over a substrate having a high gate-electrode-pattern density region and a low gate-electrode-pattern density region by using a single-wafer cold-wall thermal CVD reactor, setting a flow rate ratio of ammonia (NH3) to monosilane (SiH4) greater than that upon deposition of a silicon nitride film over a flat substrate.

Abstract: A back mirror 1 comprising an automatic glare-proof function of the present invention includes a battery E1, a daytime/nighttime deciding circuit 3 for deciding whether the current time is daytime or nighttime, an integrating circuit 4, an electronic switch FET1, a glare-proof/glare-non-proof deciding circuit 5 for deciding whether an EC mirror 2 is set to a glare-proof state or a glare-non-proof state, and a driving circuit 6 for applying a DC voltage to the EC mirror 2. The daytime/nighttime deciding circuit 3 is being constantly applied with a DC voltage from the battery E1. When the daytime/nighttime deciding circuit 3 has decided that the current time is daytime, the electronic switch FET1 is turned off, and when the daytime/nighttime deciding circuit 3 has decided that the current time is nighttime, the electronic switch FET1 is turned on.

Abstract: An EC panel drive unit for a rear-view mirror comprising a timer circuit 2 in which a drive signal is output for a fixed period of time when either a colored state switch SW1 or a colorless state switch SW2 is in the ON position; a D-type flip-flop circuit 9 that sends different output signals, depending on whether the colored state switch SW1 is in the ON position or the colorless state switch SW2 is in the ON position, and a colored/colorless state switching circuit 6 which switches the polarity of DC voltage that is output from a lithium battery based on the output from the D-type flip-flop circuit 9 and then applies the voltage to input terminals Ta and Tb of the EC panel 7. A contact SW2-3 is installed between the two input terminals, Ta and Tb, of the EC panel 7 for providing a short circuit between the two terminals when the colorless state switch SW2 is turned to the ON position.

Abstract: A motion vector detecting device re-arranges the pixel values which make up an initial block for color-difference signals, allowing for their superimposition, to produce a new color-difference signal block having the same number of pixels as that of a luminance signal block. The new color-difference signal block and a luminance signal block are respectively compared with a block for a reference image signal to perform block matching.

Abstract: An automatic antiglare mirror for a vehicle with its reflectivity being variably controlled by an electrochromic element includes a rear light detection circuit for detecting quantity of light in the rear of the vehicle, a coloration amount control circuit for controlling an amount of coloration the electrochromic element and a response speed control circuit for controlling response speed of the electrochromic element. The coloration amount control circuit performs control of the amount of coloration in such a manner that, when quantity of rear light is smaller, the amount of coloration of the electrochromic element is smaller whereas, when the quantity of rear light is larger, the amount of coloration of the electrochromic element is larger.

Abstract: A manuscript display apparatus includes a bow-shaped main body having a light emitting body housed therein translucent diffusion plate arranged on top of the main body to diffuse light emitted from the light emitting body, a support portion rotatably supported with respect to the main body, and a half mirror supported at the tip end of the support portion. When the manuscript display apparatus is to be used, a manuscript sheet is placed on top of the diffusion plate in such a way that its surface on which a manuscript is written faces down to th diffusion plate. The light emitted from the light emitting body is diffused by the diffusion plate and uniformly illuminate the manuscript sheet from the underside thereof. The light that passes through the manuscript sheet is reflected off the half mirror and therefor the manuscript is displayed as a virtual image. Because the virtual image is reversed at the half mirror, the virtual image displays the manuscript of the manuscript sheet in its original form.