Abstract: An RF converter circuit 11 that constitutes a video signal superposing/power deriving unit 100 converts video signals generated from images taken by a surveillance camera 10, which derives a direct current voltage as a driving power from an antenna lead-in wire 6 through a filter circuit (LPF circuit 12), to radio-frequency signals. The radio-frequency signals are transmitted through the antenna lead-in wire 6 to a television receiver 2. Images taken by the surveillance camera 1 can be viewed on the television receiver 2 only by selecting the channel assigned to the surveillance camera 1. Accordingly, the driving power for the surveillance camera 1 is not relied upon a solar battery or secondary batteries, and wiring work therefor may be simplified.

Abstract: A vehicle environment monitoring device comprises an imaging section for taking image data of an environment of an automobile, the image including at least two types of colors; a setting section for setting a specific area of the image data obtained by the imaging section, wherein the specific area has a strip shape longer in, and parallel to, a horizontal direction of a frame image and includes at least two types of colors; an extraction section for taking in image data of the specific area in units of one or a plurality of frame images taken by the imaging section in time series and extracting moving vector information based on the image data of the specific area; and a detection section for detecting a second vehicle which is present in an environment of a first vehicle having the vehicle environment monitoring device mounted thereon, based on the moving vector information.

Abstract: A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film.

Abstract: A CVD device (100) used for depositing a silicon nitride has a structure in which a hot wall furnace (103) for thermally degrading a source gas and a chamber (101) for forming a film over a surface of a wafer (1) are separated from each other. The hot wall furnace (103) for thermally degrading the source gas is provided above the chamber (101), and a heater (104) capable of setting the inside of the furnace at a high temperature atmosphere of approximately 1200° C. is provided at the outer periphery thereof. The source gas, supplied to the hot wall furnace (103) through pipes (105) and (106), is thermally degraded in this furnace in advance, and degraded components thereof are supplied on a stage (102) of the chamber (101) to form a film on the surface of the wafer (1).

Abstract: A magnetron plasma processing apparatus has a baffle plate interposed between a processing space and a gas exhaust port so as to confine a plasma in the processing space in a processing chamber. The baffle plate has through holes allowing the processing space and the gas exhaust port to communicate with each other. The baffle plate is provided along lines of magnetic force of a magnetic field at a position where the plate is located.

Abstract: A main spindle and a back spindle grip works W, respectively. Or, the main spindle grips one end of a work W and the back spindle grips the other end of the work W. A tool is attached to a tool spindle. By adjusting the positions of the spindles and the position of the tool spindle, the work W gripped by the main spindle and the back spindle is machined by the tool. Since tool spindle can change the direction of the tool, the work W, including both ends thereof, can be entirely machined into a complex shape. A guide bush supports the work W to prevent the work W from being bent when a lengthy work W is machined. Therefore, this lathe can entirely machine a long or short work into a complex shape.

Abstract: In the present invention, for example, wireless communication repeater station 10 comprising receiving portion 12 which receives a specific electric wave signal from an outside or inside of an automobile, amplifying portion 13 which amplifies the signal from receiving portion 12, and transmission portion 14, which transmits the signal amplified in amplifying portion 13 is accommodated within an interior mirror provided on an automobile, and wireless communication repeater station 10 forms a part of network connecting to electronic apparatuses within the automobile. This makes it possible to perform various information communications inside and outside of the automobile in a smooth manner. Also, this makes it possible to alternative communication even through a weak electric wave.

Abstract: In response to an operation of reversing a vehicle, a tilt motor is rotated by a specific amount in a normal direction to tilt a mirror angle to a position that permits a mirror to provide the driver with a view of the area near a rear wheel of the vehicle, while in response to an operation of releasing the reverse gear, the tilt motor is rotated by a specific amount in a reverse direction to restore the tilt angle to a normal position thereof. During the operations, a high-frequency signal generated upon switching a brush of the motor is detected using a pickup coil to determine an amount of rotation of the motor. One and the same pickup coil may be used for detection during both of normal and reverse rotations. A voltage of a battery 3 is stabilized in a motor power stabilizing circuit 10, and supplied via a motor driving circuit 8 to a tilt motor M2. Polarity of the voltage outputted from the motor power stabilizing circuit 10 is fixed.

Abstract: Infrared camera 5, infrared luminescence equipment 2, and shutter synchronous luminescence drive 7 are arranged in mirror case 6 at the back side of cold mirror 3, infrared luminescence equipment 2 synchronizes with shutter operation of the infrared camera 5 by the shutter synchronous luminescence drive 7, to do intermittent luminescence operation. And clear and exact stable photography picture is obtained without being influenced by disturbance light, without a driver and a fellow passenger who are a photographic subject having sense of incongruity in any way, without making them conscious of existence of an infrared camera also.

Abstract: A technique capable of improving the reliability, more particularly, the data retention characteristics in a semiconductor integrated circuit device having a non-volatile memory using a nitride film as a charge storage layer is provided. A control gate electrode of selecting nMIS is formed on a first region of a substrate via a gate insulator, and a charge storage layer of the memory nMIS is formed on a second region via an insulator so that the hydrogen concentration of the charge storage layer is 1020 cm−3 or less. After forming an insulator, a memory gate electrode of the memory nMIS is formed on the second region via the insulators and the charge storage layer, and an impurity is implanted into the region adjacent to the selecting nMIS and the memory nMIS to form a semiconductor region constituting a drain region and a source region of the memory cell.

Abstract: Gate wiring is formed serving as first gate wiring in a DRAM-forming area, and gate wiring 33 is formed as second gate wiring in a logic-forming area. Then, cobalt silicide layer 37 is formed over a source/drain diffused layer in the DRAM-forming area, and cobalt silicide layer is formed over a source/drain diffused layer and the gate wiring in the logic-forming area. Such formation of the cobalt silicide layer reduces the resistance of the gate wiring and the contact resistance, and thereby enables the high-speed operation of a semiconductor device even if the device is microfabricated.

Abstract: Described is a manufacturing method of a semiconductor integrated circuit device by depositing a silicon nitride film to give a uniform thickness over the main surface of a semiconductor wafer having a high pattern density region and a low pattern density region. This is attained by, upon depositing a silicon nitride film over a substrate having a high gate-electrode-pattern density region and a low gate-electrode-pattern density region by using a single-wafer cold-wall thermal CVD reactor, setting a flow rate ratio of ammonia (NH3) to monosilane (SiH4) greater than that upon deposition of a silicon nitride film over a flat substrate.

Abstract: The present invention provides an inner mirror with a built-in antenna in which an antenna angle remains unchanged regardless of adjustment of a mirror angle. The upper end of a stay 10 is mounted on a ceiling in a vehicle room. A pivot 14 is formed at the lower end of the stay 10. The pivot 14 is inserted into a mirror body 16 and fitted into a pivot supporting pmember 20 to support the mirror body 16 pivotally in three-dimensional directions. An antenna 34 is mounted on one side of the pivot 14 through shafts 28 and 30. Since the antenna 34 is mounted on the pivot 14, the angle of the antenna 34 remains unchanged, even though the mirror angle adjustment is performed by pivoting the mirror body 16.

Abstract: An RF converter circuit 11 that constitutes a video signal superposing/power deriving unit 100 converts video signals generated from images taken by a surveillance camera 10, which derives a direct current voltage as a driving power from an antenna lead-in wire 6 through a filter circuit (LPF circuit 12), to radio-frequency signals. The radio-frequency signals are transmitted through the antenna lead-in wire 6 to a television receiver 2. Images taken by the surveillance camera 1 can be viewed on the television receiver 2 only by selecting the channel assigned to the surveillance camera 1. Accordingly, the driving power for the surveillance camera 1 is not relied upon a solar battery or secondary batteries, and wiring work therefor may be simplified.

Abstract: A deflection yoke is used for a cathode ray tube (CRT) including a glass tube having a screen surface and a straight portion for accommodating an electron gun. The deflection yoke includes a main deflection yoke including first and second horizontal deflecting coils and first and second vertical deflecting coils, and a sub-deflection yoke provided at a side of the main deflection yoke towards the electron gun of the CRT. The first and second horizontal deflecting coils have substantially saddle shapes and includes first and second coil-connection-wire sections and first and second horizontal deflection sections, respectively. The first and second coil-connection-wire sections are wound in a direction perpendicular to a tube axis of the CRT and along the straight portion, respectively. The first and second horizontal deflection sections are located towards the screen surface from the first and the second coil-connection-wire sections, respectively.

Abstract: A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film.

Abstract: A CVD device (100) used for depositing a silicon nitride has a structure in which a hot wall furnace (103) for thermally degrading a source gas and a chamber (101) for forming a film over a surface of a wafer (1) are separated from each other. The hot wall furnace (103) for thermally degrading the source gas is provided above the chamber (101), and a heater (104) capable of setting the inside of the furnace at a high temperature atmosphere of approximately 1200° C. is provided at the outer periphery thereof. The source gas, supplied to the hot wall furnace (103) through pipes (105) and (106), is thermally degraded in this furnace in advance, and degraded components thereof are supplied on a stage (102) of the chamber (101) to form a film on the surface of the wafer (1).

Abstract: An RF converter circuit 11 that constitutes a video signal superposing/power deriving unit 100 converts video signals generated from images taken by a surveillance camera 10, which derives a direct current voltage as a driving power from an antenna lead-in wire 6 through a filter circuit (LPF circuit 12), to radio-frequency signals. The radio-frequency signals are transmitted through the antenna lead-in wire 6 to a television receiver 2. Images taken by the surveillance camera 1 can be viewed on the television receiver 2 only by selecting the channel assigned to the surveillance camera 1. Accordingly, the driving power for the surveillance camera 1 is not relied upon a solar battery or secondary batteries, and wiring work therefor may be simplified.

Abstract: A digitized image signal-outputting infrared/near-infrared camera 1A equipped in an image pickup unit 1 located in a blind spot for an occupant of an automobile behind a hood 2A of a dashboard 2 shoot a full face of the occupant from a direction directly opposite thereto with the help of reflection in a cold filter 4 installed in an instrument panel 3. The face of the occupant can precisely be shot from the direction directly opposite thereto without requiring any change in position of indicating meters 5 in the instrument panel 3 and without causing the occupant (including a driver) any discomfort.

Abstract: Described is a manufacturing method of a semiconductor integrated circuit device by depositing a silicon nitride film to give a uniform thickness over the main surface of a semiconductor wafer having a high pattern density region and a low pattern density region. This is attained by, upon depositing a silicon nitride film over a substrate having a high gate-electrode-pattern density region and a low gate-electrode-pattern density region by using a single-wafer cold-wall thermal CVD reactor, setting a flow rate ratio of ammonia (NH3) to monosilane (SiH4) greater than that upon deposition of a silicon nitride film over a flat substrate.