Patents by Inventor Hiroshi Tanabe

Hiroshi Tanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170030583
    Abstract: A combustor replacement method and a gas turbine plant capable of efficiently replacing a combustor using an existing facility. The combustor replacement method includes a step of separating, from a plurality of fuel supply systems, a first combustor that includes a plurality of nozzle systems connected to any of the plurality of fuel supply systems and supplied with fuel from the connected fuel supply systems, and removing the first combustor from a gas turbine plant. The method includes a step of attaching a second combustor that includes fewer nozzle systems than the first combustor to the gas turbine plant, and a step of providing communication between the fuel supply systems connected to the same nozzle system of the second combustor by a coupling pipe, and coupling the fuel supply systems and the second combustor.
    Type: Application
    Filed: May 19, 2015
    Publication date: February 2, 2017
    Inventors: Keita FUJII, Shin AKAZAWA, Nobukazu ISHII, Masahiro MATSUBARA, Masayuki MURAKAMI, Fuminori FUJII, Hiroshi TANABE, Masaru TAKAMATSU
  • Publication number: 20160349653
    Abstract: Provided is a ultraviolet-curable liquid developer containing a cationically polymerizable liquid monomer, a photoinitiator, and a toner particle, wherein the cationically polymerizable liquid monomer contains a vinyl ether compound; defining A as the molar average number of functional groups for the vinyl ether compound and B as the molar average molecular weight of the vinyl ether compound, A and B satisfy the relationship A/B×1,000?8.5; and the photoinitiator contains a specific compound.
    Type: Application
    Filed: May 27, 2016
    Publication date: December 1, 2016
    Inventors: Hiroshi Tanabe, Junji Ito, Yasuhiro Aichi, Naotake Sato
  • Publication number: 20160349651
    Abstract: An ultraviolet-curable liquid developer containing a cationically polymerizable liquid monomer, a photoinitiator, and a toner particle, wherein the cationically polymerizable liquid monomer contains a vinyl ether compound, the molar average SP value of the cationically polymerizable liquid monomer is not more than 9.0, the molar average number of functional groups for the cationically polymerizable liquid monomer is at least 1.8, the photoinitiator contains a specified compound, and the content of the specified compound is at least 0.01 mass parts and not more than 5.00 mass parts per 100 mass parts of the cationically polymerizable liquid monomer.
    Type: Application
    Filed: May 27, 2016
    Publication date: December 1, 2016
    Inventors: Junji Ito, Yasuhiro Aichi, Naotake Sato, Hiroshi Tanabe
  • Patent number: 9458323
    Abstract: The invention provides a production process for a self-dispersible pigment, having a step of bonding a functional group containing a hydrophilic group to a particle surface of a pigment by causing at least one treatment agent selected from the group consisting of a compound represented by the following general formula (1) and a compound represented by the following general formula (2) to react with the particle surface of the pigment: wherein A1 and A2 are each a carboxylic acid group or the like.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: October 4, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ryuji Higashi, Taiki Watanabe, Koichi Suzuki, Hiroshi Tanabe
  • Patent number: 9397242
    Abstract: The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.
    Type: Grant
    Filed: March 28, 2012
    Date of Patent: July 19, 2016
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Yasushi Taniguchi, Shigeru Sankawa, Sr., Kouji Arai, Hiroshi Tanabe, Ichiro Nakayama, Naoshi Yamaguchi
  • Publication number: 20150376413
    Abstract: The invention provides a production process for a self-dispersible pigment, having a step of bonding a functional group containing a hydrophilic group to a particle surface of a pigment by causing at least one treatment agent selected from the group consisting of a compound represented by the following general formula (1) and a compound represented by the following general formula (2) to react with the particle surface of the pigment: wherein A1 and A2 are each a carboxylic acid group or the like.
    Type: Application
    Filed: June 24, 2015
    Publication date: December 31, 2015
    Inventors: Ryuji Higashi, Taiki Watanabe, Koichi Suzuki, Hiroshi Tanabe
  • Patent number: 9185092
    Abstract: In a confidential-communication system that uses a first-communication network that is Internet capable of confidential communication using VPN, and a second communication network that is an audio-circuit network, a method is implemented wherein a send/receive-processing portion 5 of a communication control device 3 completes authentication between users by implementing a P2P connection between each communication control device 3 by referencing specific information that specifies another party of a P2P connection in a memory portion 4 on the communication device 3 before confidential communication starts using VPN; a confidential-communication preparation portion 70 of the communication control device 3 exchanges via the second communication network VPN joint information required to establish a VPN link with the first communication network; and a switching portion 71 of the communication control device 3 starts confidential communication using VPN over a first-communication network.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: November 10, 2015
    Inventors: Akira Nishihata, Hiroshi Tanabe
  • Publication number: 20150260098
    Abstract: A power-generation plant 10 including a gas turbine 11; a fuel-gas cooler 13; and an extraction line 24 that guides the fuel gas extracted from an intermediate stage of a fuel-gas compressor 12 to the fuel-gas cooler 13; a first level detector 61 that detects whether a level of the coolant accumulated at a bottom portion of the fuel-gas cooler 13 has reached a predetermined level; and a controller that stops the gas turbine 11 on the basis of a detection signal sent from the first level detector 61 and that outputs a command signal for stopping a coolant pump 53 that supplies the coolant to the spray nozzles 44 and 45.
    Type: Application
    Filed: May 29, 2015
    Publication date: September 17, 2015
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventor: Hiroshi Tanabe
  • Patent number: 9097188
    Abstract: The disclosure provides a gas turbine device capable of producing a mixed gas in which three or more types of gases are evenly mixed, and of doing the like. To achieve this, in a gas turbine device configured to burn in a combustor a fuel gas supplied from a fuel gas supplier, together with a compressed air supplied from an air compressor, and to rotationally drive a gas turbine by a combustion gas generated at the burning, the fuel gas supplier includes two mixers, and is configured to produce a mixed gas by mixing three types of gases of a first gas, a second gas, and a third gas in the mixers in ascending order of specific gravity or in descending order of specific gravity, and to supply the mixed gas to the combustor as the fuel gas.
    Type: Grant
    Filed: October 1, 2008
    Date of Patent: August 4, 2015
    Assignee: MITSUBISHI HITACHI POWER SYSTEMS, LTD.
    Inventors: Hiroshi Tanabe, Noboru Hisaka
  • Patent number: 9074532
    Abstract: A power-generation plant 10 including a gas turbine 11; a fuel-gas cooler 13; and an extraction line 24 that guides the fuel gas extracted from an intermediate stage of a fuel-gas compressor 12 to the fuel-gas cooler 13; a first level detector 61 that detects whether a level of the coolant accumulated at a bottom portion of the fuel-gas cooler 13 has reached a predetermined level; and a controller that stops the gas turbine 11 on the basis of a detection signal sent from the first level detector 61 and that outputs a command signal for stopping a coolant pump 53 that supplies the coolant to the spray nozzles 44 and 45.
    Type: Grant
    Filed: January 20, 2012
    Date of Patent: July 7, 2015
    Assignee: MITSUBISHI HITACHI POWER SYSTEMS, LTD.
    Inventor: Hiroshi Tanabe
  • Publication number: 20150160447
    Abstract: The microscope imaging system is provided with: a stage having a mount face on which a specimen is to be mounted; an imaging unit having an imaging element for imaging a part of an imaging region set on the mount face; and a optical unit arranged between the stage and the imaging unit and having an objective lens for imaging light from a part of the imaging region onto the imaging unit. The specimen is arranged so that the mount face is orthogonal to an optical axis of the objective lens.
    Type: Application
    Filed: March 19, 2013
    Publication date: June 11, 2015
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Masatoshi Okugawa, Hiroshi Tanabe
  • Patent number: 8988637
    Abstract: To suppress light leakage at the time of dark state, and to provide a liquid crystal display device whose electrodes in the reflection areas can be formed with high precision. The liquid crystal display device has a reflection area within a pixel unit by corresponding at least to a reflection plate forming part, and the reflection area is driven with a lateral electric field mode and normally-white. A driving electrode for forming an electric field to a liquid crystal layer of the reflection area is formed on the reflection plate via an insulating film by using a non-transparent electric conductor.
    Type: Grant
    Filed: June 17, 2013
    Date of Patent: March 24, 2015
    Assignee: NLT Technologies, Ltd.
    Inventors: Kenichi Mori, Michiaki Sakamoto, Ken Sumiyoshi, Hiroshi Nagai, Kenichirou Naka, Masayuki Jumonji, Hiroshi Tanabe
  • Patent number: 8941803
    Abstract: A liquid crystal display device of IPS mode includes an array of pixels arranged in a matrix pattern by crossing a plurality of video signal lines and a plurality of scanning signal lines each other. Each of the pixels is provided with at least a switching element. A transparent insulating film is provided on both signal lines, and a plurality of pixel electrodes, common electrodes and common lines are provided on the transparent insulating film. The common lines are formed in a grid-shaped pattern such that a first group of the common lines is made of a first conductor having lower reflectivity against optical light than that of metal while a second group of the common lines is made of a second conductor including a metal layer such that said first group and said second group are crossing each other along said video signal lines and said scanning signal lines.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: January 27, 2015
    Assignee: NLT Technologies, Ltd.
    Inventors: Soichi Saito, Shinya Niioka, Masayuki Jumonji, Hiroshi Tanabe, Masamichi Shimoda
  • Patent number: 8912583
    Abstract: The present invention provides a thin-film transistor manufactured on a transparent substrate having a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate; wherein the channel region having channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film; the light blocking film is divided across the channel region; and interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d). Thereby, the cost for manufacturing the thin-film transistor is low, and the photo leak current of the thin-film transistor is suppressed.
    Type: Grant
    Filed: November 14, 2012
    Date of Patent: December 16, 2014
    Assignee: NLT Technologies, Ltd.
    Inventors: Shigeru Mori, Takahiro Korenari, Hiroshi Tanabe
  • Patent number: 8899047
    Abstract: Provided is a power plant including a gas turbine that uses a fuel gas as a fuel; a fuel gas cooler that cools the fuel gas, which is to be pressurized in a fuel gas compressor and re-circulated, using cooling water; and a dust collection device that separates/removes impurities from the fuel gas that is to be guided to the fuel gas compressor; wherein the power plant further includes heating means that heats the fuel gas that is to be guided to the dust collection device using the fuel gas that has been used to generate an anti-thrust force acting on a rotor of the fuel gas compressor.
    Type: Grant
    Filed: June 20, 2011
    Date of Patent: December 2, 2014
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Hiroshi Tanabe, Eiki Anzawa
  • Patent number: 8877521
    Abstract: A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask, forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer, forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film, and forming a ferroelectric layer on the lower electrode.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: November 4, 2014
    Assignee: Gold Charm Limited
    Inventor: Hiroshi Tanabe
  • Publication number: 20140305590
    Abstract: A non-plasma dry etching apparatus forms textures by processing plural substrates at the same time, and all substrates and textures in respective substrate planes are formed to be uniform at the time of processing and all substrates and values of the reflectance in respective substrate planes are formed to be uniform as well as size reduction of equipment. The substrates are placed in plural stages so as to be parallel to the flow of a process gas in a reaction chamber. The uniform etching is realized by installing turbulent flow generation blades in the upstream side of the flow.
    Type: Application
    Filed: April 14, 2014
    Publication date: October 16, 2014
    Applicant: PANASONIC CORPORATION
    Inventors: NAOSHI YAMAGUCHI, HIROSHI TANABE, YASUSHI TANIGUCHI
  • Publication number: 20140246092
    Abstract: A silicon substrate having a new shape on the opposite surface side of textures can be manufactured at low costs by performing high-quality washing to the silicon substrate with a substrate plane orientation (100) having a texture structure by using a gas etching method, thereby improving use efficiency of light. A silicon substrate is provided having the substrate plane orientation (100) with textures, in which fine rectangular-shaped unevenness is formed in a ripple shape on the opposite side surface of the texture-formed surface, and the depth of concave portions therein is 10 to 200 nm.
    Type: Application
    Filed: February 27, 2014
    Publication date: September 4, 2014
    Applicant: Panasonic Corporation
    Inventors: KOUJI ARAI, NAOSHI YAMAGUCHI, HIROSHI TANABE
  • Publication number: 20140231787
    Abstract: The present invention provides a white organic EL element improved in durability characteristic. A light-emitting layer has a laminated configuration including a first light-emitting layer and a second light-emitting layer. A difference in LUMO energy between a host and a blue light-emitting dopant of the first light-emitting layer is set to be larger than a difference in HOMO energy.
    Type: Application
    Filed: September 20, 2012
    Publication date: August 21, 2014
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Koichi Ishige, Hiroshi Tanabe, Jun Kamatani, Naoki Yamada, Akihito Saitoh
  • Publication number: 20140216541
    Abstract: A silicon substrate includes a texture structure in which quadrangular pyramid-shaped first textures having a (111) plane on slopes are formed on a surface of the silicon substrate having a plane orientation (100) and second textures having etch pits surrounded by three planes of the (100) plane, a (010) plane and a (001) plane are formed on surfaces of the first textures.
    Type: Application
    Filed: January 27, 2014
    Publication date: August 7, 2014
    Applicant: Panasonic Corporation
    Inventors: Naoshi YAMAGUCHI, Hiroshi TANABE