Abstract: A power-generation plant 10 including a gas turbine 11; a fuel-gas cooler 13; and an extraction line 24 that guides the fuel gas extracted from an intermediate stage of a fuel-gas compressor 12 to the fuel-gas cooler 13; a first level detector 61 that detects whether a level of the coolant accumulated at a bottom portion of the fuel-gas cooler 13 has reached a predetermined level; and a controller that stops the gas turbine 11 on the basis of a detection signal sent from the first level detector 61 and that outputs a command signal for stopping a coolant pump 53 that supplies the coolant to the spray nozzles 44 and 45.

Abstract: Provided is a power plant including a gas turbine that uses a fuel gas as a fuel; a fuel gas cooler that cools the fuel gas, which is to be pressurized in a fuel gas compressor and re-circulated, using cooling water; and a dust collection device that separates/removes impurities from the fuel gas that is to be guided to the fuel gas compressor; wherein the power plant further includes heating means that heats the fuel gas that is to be guided to the dust collection device using the fuel gas that has been used to generate an anti-thrust force acting on a rotor of the fuel gas compressor.

Abstract: A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./?m or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 ?m or less.

Abstract: An object of the present invention is to provide a method of starting and stopping a gas turbine and a start-and-stop control device, which are capable of solving a problem of a failure in normally igniting a fuel gas due to a purge gas (nitrogen gas) remaining in a fuel gas pipe and thereby igniting the fuel gas stably.

Abstract: To suppress bad shaping generated due to fusion of neighboring cylindrical lenses in a lens sheet formed by using an ultraviolet curable resin, for example. A lens sheet includes: a substrate formed with a transparent material; a plurality of protruded lines provided on the substrate in parallel at a specific pitch; and a plurality of cylindrical lenses, each of which is provided between the plurality of protruded lines on the substrate. The protruded line for forming the lens is designed to be constituted with a set of two lines, i.e., a left protruded line and a right protruded line, to suppress fusion of the neighboring lenses.

Abstract: A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./?m or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 ?m or less.

Abstract: A metal catalyst substrate 1 is equipped with a honeycomb body 2 in which a corrugated metal foil 4 and a flat metal foil 5 are multiply rolled, their leader portions being overlapped with each other. A restricting portion 8 is formed at a core portion 7 of the honeycomb body 2 by a portion of the core portion being deformed to restrict flow of exhaust gas in a core portion 7.

Abstract: A solid immersion lens holder 200 includes a holder main body 8 having a lens holding unit 60 that holds a solid immersion lens 6, and an objective lens socket 9 for attaching the holder main body 8 to a front end of an objective lens 21. The solid immersion lens 6 is held in a state of being unfixed to be free with respect to the lens holding unit 60. A vibration generator unit 120 that causes the holder main body 8 to vibrate is attached to the objective lens socket 9. The vibration generator unit 120 has a vibrating motor 140 held by a motor holding member 130, and a weight 142 structured to be eccentric by weight is attached to an output shaft 141 of the vibrating motor 140. A vibration generated in the vibration generator unit 120 is transmitted to the solid immersion lens 6 via the objective lens socket 9 and the holder main body 8. Thereby, achieving the solid immersion lens holder capable of improving the close contact between the solid immersion lens and an observation object.

Abstract: The material utilization efficiency of FPC's is improved, to provide a low cost touch panel. A touch panel 100 is constituted by: a rectangular transparent panel 104; and a plurality of light emitting elements 8a and a plurality of light receiving elements 8b provided at the peripheral portions of the transparent panel 104, for specifying the coordinates of targets of detection. An elongate FPC 106 is folded at a plurality of predetermined locations to be provided as a frame along the four sides 122a, 122b, 122c, and 122d of the transparent panel 104. The plurality of light emitting elements 8a are provided on the FPC 106 along two adjacent sides of the transparent panel 104, and the plurality of light receiving elements 8b are provided on the other two sides of the transparent panel 104 so as to face the light emitting elements 8a.

Abstract: Provided is an organic light-emitting device having an optical output with high luminance and high color purity with extremely high efficiency. The organic light-emitting device includes an organic layer between the anode and the cathode, in which one of the anode and the cathode is a transparent electrode or a semi-transparent electrode and at least one layer of the organic layer contains at least one kind of indenopyrene compound having a specific structure.

Abstract: A thin-film transistor manufactured on a transparent substrate has a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate. The channel region has channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film. The light blocking film is divided across the channel region. Interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d), allowing low the manufacturing cost and suppressed photo leak current.

Abstract: A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.

Abstract: An object of the present invention is to provide a gas turbine device capable of producing a mixed gas in which three or more types of gases are evenly mixed, and of doing the like. To achieve this, in a gas turbine device configured to burn in a combustor (2) a fuel gas supplied from a fuel gas supplier (8), together with a compressed air (b) supplied from an air compressor (3), and to rotationally drive a gas turbine 1 by a combustion gas (c) generated at the burning, the fuel gas supplier (8) includes two mixers (15, 16), and is configured to produce a mixed gas (a) by mixing three types of gases of a first gas (I), a second gas (II), and a third gas (III) in the mixers (15, 16) in ascending order of specific gravity or in descending order of specific gravity, and to supply the mixed gas (a) to the combustor (2) as the fuel gas.

Abstract: To achieve TFT having a high light-resistance characteristic with a suppressed light leak current at low cost by simplifying the manufacturing processes. The TFT basically includes a light-shielding film formed on a glass substrate that serves as an insulating substrate; an insulating film formed on the light-shielding film; a semiconductor film formed on the insulating film; and a gate insulating film formed on the semiconductor film. Each layer of a laminate that is configured with three layers of the light-shielding film, the insulating film, and the semiconductor film is patterned simultaneously. Further, each layer of the laminate is configured with silicon or a material containing silicon.

Abstract: An image forming apparatus includes: a functional element substrate to which a pixel is formed in a predetermined cycle; an opposed substrate formed on the functional element substrate; and an optical device arranged on the opposed substrate, which includes a transparent layer and an optical absorption layer arranged in a cycle of 1/n (n is an integer number) of the cycle of arranging the pixel, and restricts spread of transmitted light.

Abstract: To achieve TFT having a high light-resistance characteristic with a suppressed light leak current at low cost by simplifying the manufacturing processes. The TFT basically includes: a light-shielding film formed on a glass substrate that serves as an insulating substrate; an insulating film formed on the light-shielding film; a semiconductor film formed on the insulating film; and a gate insulating film formed on the semiconductor film. Each layer of a laminate that is configured with three layers of the light-shielding film, the insulating film, and the semiconductor film is patterned simultaneously. Further, each layer of the laminate is configured with silicon or a material containing silicon.

Abstract: A thin film transistor (TFT) substrate includes first and second TFTs on the same substrate. The first TFT has a feature that a lower conductive layer or a bottom gate electrode layer is provided between the substrate and a first insulating layer while an upper conductive layer or a top gate electrode layer is disposed on a second insulating layer formed on a semiconductor layer which is formed on the first insulating layer. The first conductive layer has first and second areas such that the first area overlaps with the first conductive layer without overlapping with the semiconductor layer while the second area overlaps with the semiconductor layer, and the first area is larger than the second area while the second insulating layer is thinner than the first insulating layer. The second TFT has the same configuration as the first TFT except that the gate electrode layer is eliminated.

Abstract: A semiconductor device includes a supporting substrate; a semiconductor film on the supporting substrate; a gate insulating film on the semiconductor film; a gate electrode on the gate insulating film; and a source region and a drain region formed by introducing impurity elements to the semiconductor film. The thickness of the semiconductor film is within the range of 20 nm to 40 nm. Low-concentration regions are provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively. The low-concentration regions each have an impurity concentration smaller than that of the source region and that of the drain region, and the impurity concentration in a lower surface side region on the side of the supporting substrate is smaller than that of an upper surface side region on the opposite side.

Abstract: A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask, forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer, forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film, and forming a ferroelectric layer on the lower electrode.

Abstract: Provided a novel 1,8-naphthyridine compound represented by the following general formula [I]: wherein R1 to R6 each represent a hydrogen atom; an alkyl group, a halogen atom; a trifluoromethyl group; and a cyano group, and may be the same as or different from one another, and that at least two of R1 to R6 each represent an aralkyl group, an aryl group, a heterocyclic group, a condensed polycyclic aromatic group, a condensed polycyclic heterocyclic group and an aryloxy group which may be substituted; and a substituted amino group. The 1,8-naphthyridine is employed in an organic compound layer provided between a pair of electrodes in an organic light-emitting device.