Patents by Inventor Hong-Ji Lee

Hong-Ji Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6589706
    Abstract: A cyanine dye (I) for using in high density optical disc recording medium, having the following structure: in which R1 represents R2 represents and alkyl with C1-C18 or X− represents an acid anion. This cyanine dye is suitable for use as a &lgr;=500 nm−650 nm visible light-absorbing organic dye useful as a high density optical disc recording medium.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: July 8, 2003
    Assignees: Industrial Technology Research Institute, National Tsing-Hua University
    Inventors: Wen-Yih Liao, Andrew Teh Hu, Chien-Liang Huang, Huei-Wen Yang, Der-Ray Huang, Ding-Yih Hu, Ming-Chia Lee, Hong-Ji Lee
  • Patent number: 6462483
    Abstract: A method and an apparatus of plasma treating a wafer with low capacitive coupling, high induction power density and high uniformity of reactive species were disclosed in this invention. A first embodiment manages a multiturn helical coil to match with an impedance at an RF drive frequency for reducing capacitive coupling. A second embodiment uses a can-like dielectric to prompt plasma species approaching the wafer surface at a low pressure, thus providing higher plasma density and higher etch rate. A third embodiment uses a cap-like dielectric to raise the ceiling above the wafer for improving the plasma generation uniformity in the chamber.
    Type: Grant
    Filed: November 18, 1999
    Date of Patent: October 8, 2002
    Assignee: Nano-Architect Research Corporation
    Inventors: David Guang-Kai Jeng, Fred Yingyi Chen, Tsung-Nane Kuo, Hong-Ji Lee
  • Patent number: 6451161
    Abstract: A method and a reactor of plasma treating a wafer with high induction plasma density and high uniformity of reactive species were disclosed in this invention. The inductively coupled plasma reactor of the present invention includes a vacuum chamber having a dielectric ceiling thereof and a unique coil configuration atop on the dielectric ceiling, wherein the dielectric ceiling is designed to have a different height according to its shape, e.g., a planar, dish-shaped or hat-shaped dielectric ceiling, for coupling an RF power into the chamber to excite the plasma. The unique coil configuration contains plural helical coils which are arranged in series or in parallel to provide a high-density uniform ion plasma for a large wafer treatment.
    Type: Grant
    Filed: April 10, 2000
    Date of Patent: September 17, 2002
    Assignee: Nano-Architect Research Corporation
    Inventors: David Guang-Kai Jeng, Hong-Ji Lee, Fred Yingyi Chen, Ching-An Chen, Tsung-Nane Kuo, Jui-Hung Yeh
  • Publication number: 20020121345
    Abstract: A multi-chamber system for processing semiconductor wafers with inductively coupled plasma comprises an inductive coil arrangement for plasma generation disposed on dielectric windows of a reaction chamber, in which the inductive coil arrangement includes a plurality of coil units in parallel to each other with a current flowing through in a direction opposite to that of adjacent coil units and a metal ring disposed above each of the coil units to meet a specific impedance. The inductive coil arrangement for plasma generation reduces the capacitive coupling between the inductive coil arrangement and the produced plasma, thereby decreasing the sheath voltage thereof and damages to the wafers during the process with the plasma. In the multi-chamber system, a plurality of working platforms are provided on a susceptor in the reaction chamber such that a plurality of small-size wafers can be simultaneously processed.
    Type: Application
    Filed: March 5, 2001
    Publication date: September 5, 2002
    Applicant: Nano-Architect Research Corporation
    Inventors: Ching-An Chen, Hong-Ji Lee, David Guang-Kai Jeng
  • Patent number: 6319858
    Abstract: Disclosed is a non-solvent method for reducing a dielectric constant of a dielectric film. The dielectric film, which can be formed on a substrate by a spin-on coating or a chemical vapor deposition (CVD), is placed in an atmosphere of an inert gas at a high pressure or in a supercritical fluid state, and then the pressure of the atmosphere is rapidly released to form nanopores on the surface of the dielectric film, whereby the dielectric constant thereof is reduced.
    Type: Grant
    Filed: July 11, 2000
    Date of Patent: November 20, 2001
    Assignee: Nano-Architect Research Corporation
    Inventors: Hong-Ji Lee, David Guang-Kai Jeng
  • Patent number: 5958087
    Abstract: A cyanine dye for using in high density optical disc recording medium, having the following structure: ##STR1## wherein R represents 4-methoxycarbonyl benzyl group, X.sup.- represents an acid anion, and n represents an integer of 1 or 2. This cyanine dye is suitable for use as a .lambda.=450 nm.about.650 nm visible light-absorbing organic dye useful as a high density optical disc recording medium.
    Type: Grant
    Filed: February 8, 1999
    Date of Patent: September 28, 1999
    Assignees: Industrial Technology Research Institute, National Tsing Hua University
    Inventors: Wen-Yih Liao, Chien-Liang Huang, Der-Ray Huang, Don-Yau Chiang, Andrew Teh Hu, Hong-Ji Lee, Shi-Jae Ye, Ying-Jen Kao
  • Patent number: 5900348
    Abstract: A cyanine dye for using in optical disc recording medium, having the following structure: ##STR1## wherein R represents 4-methoxycarbonyl benzyl group, X.sup.- represents an acid anion, and n represents am integer of 2 or 3. This cyanine dye is suitable for use as a near infrared light-absorbing organic dye useful as an optical disc recording medium.
    Type: Grant
    Filed: July 23, 1997
    Date of Patent: May 4, 1999
    Assignees: National Tsing Hua University, Industrial Technology Research Institute
    Inventors: Andrew Teh Hu, Hong-Ji Lee, Jian-Liang Huang, Jen-Cheng Chang, Shi-Jae Ye, Der-Ray Huang, Don-Yau Chiang, Wen-Yih Liao, Tzuan-Ren Jeng, Jin-Sen Chen
  • Patent number: 5698644
    Abstract: Syndiotactic polymers of vinyl aromatic monomers are synthesized in the presence of a catalytic system consisting of a commercial titanium compound and methylaluminoxane under high pressure and/or supercritical state of inert gas such as argon or nitrogen.
    Type: Grant
    Filed: January 27, 1997
    Date of Patent: December 16, 1997
    Assignee: National Science Council
    Inventors: Andrew Teh Hu, Hong-Ji Lee, Tein-Sone Chen