Patents by Inventor Hung-Hua Lin
Hung-Hua Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11953740Abstract: A package structure including a photonic, an electronic die, an encapsulant and a waveguide is provided. The photonic die includes an optical coupler. The electronic die is electrically coupled to the photonic die. The encapsulant laterally encapsulates the photonic die and the electronic die. The waveguide is disposed over the encapsulant and includes an upper surface facing away from the encapsulant. The waveguide includes a first end portion and a second end portion, the first end portion is optically coupled to the optical coupler, and the second end portion has a groove on the upper surface.Type: GrantFiled: May 14, 2021Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Ming Weng, Chen-Hua Yu, Chung-Shi Liu, Hao-Yi Tsai, Cheng-Chieh Hsieh, Hung-Yi Kuo, Tsung-Yuan Yu, Hua-Kuei Lin, Che-Hsiang Hsu
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Patent number: 11947173Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.Type: GrantFiled: May 5, 2023Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chung-Ming Weng, Chen-Hua Yu, Chung-Shi Liu, Hao-Yi Tsai, Cheng-Chieh Hsieh, Hung-Yi Kuo, Tsung-Yuan Yu, Hua-Kuei Lin, Che-Hsiang Hsu
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Publication number: 20240105901Abstract: In an embodiment, a device includes: an interconnect structure including a first contact pad, a second contact pad, and an alignment mark; a light emitting diode including a cathode and an anode, the cathode connected to the first contact pad; an encapsulant encapsulating the light emitting diode; a first conductive via extending through the encapsulant, the first conductive via including a first seed layer, the first seed layer contacting the second contact pad; a second conductive via extending through the encapsulant, the second conductive via including a second seed layer, the first seed layer and the second seed layer including a first metal; and a hardmask layer between the second seed layer and the alignment mark, the hardmask layer including a second metal, the second metal different from the first metal.Type: ApplicationFiled: December 1, 2023Publication date: March 28, 2024Inventors: Chen-Hua Yu, Keng-Han Lin, Hung-Jui Kuo, Hui-Jung Tsai
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Patent number: 11932534Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.Type: GrantFiled: March 16, 2022Date of Patent: March 19, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Hua Lin, Chang-Ming Wu, Chung-Yi Yu, Ping-Yin Liu, Jung-Huei Peng
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Publication number: 20240087879Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.Type: ApplicationFiled: November 14, 2023Publication date: March 14, 2024Inventors: Xin-Hua Huang, Ping-Yin Liu, Hung-Hua Lin, Hsun-Chung Kuang, Yuan-Chih Hsieh, Lan-Lin Chao, Chia-Shiung Tsai, Xiaomeng Chen
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Patent number: 11923413Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. The semiconductor structure further includes a gate structure surrounding the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure further includes a contact formed over the source/drain structure and extending into the source/drain structure.Type: GrantFiled: February 7, 2022Date of Patent: March 5, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ta-Chun Lin, Kuo-Hua Pan, Jhon-Jhy Liaw, Chao-Ching Cheng, Hung-Li Chiang, Shih-Syuan Huang, Tzu-Chiang Chen, I-Sheng Chen, Sai-Hooi Yeong
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Patent number: 11923425Abstract: A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.Type: GrantFiled: February 17, 2023Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Cheng Chiu, Tian Sheng Lin, Hung-Chou Lin, Yi-Min Chen, Chiu-Hua Chung
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Patent number: 11854795Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.Type: GrantFiled: March 21, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Xin-Hua Huang, Ping-Yin Liu, Hung-Hua Lin, Hsun-Chung Kuang, Yuan-Chih Hsieh, Lan-Lin Chao, Chia-Shiung Tsai, Xiaomeng Chen
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Patent number: 11827513Abstract: A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.Type: GrantFiled: October 8, 2021Date of Patent: November 28, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Kuei-Sung Chang, Tai-Bang An, Chun-Wen Cheng, Hung-Hua Lin
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Publication number: 20230371383Abstract: In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.Type: ApplicationFiled: July 20, 2023Publication date: November 16, 2023Inventors: Yi-Ren Wang, Hung-Hua Lin, Yuan-Chih Hsieh
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Publication number: 20230365398Abstract: A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.Type: ApplicationFiled: July 25, 2023Publication date: November 16, 2023Inventors: Kuei-Sung Chang, Tai-Bang An, Chun-Wen Cheng, Hung-Hua Lin
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Patent number: 11812664Abstract: In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.Type: GrantFiled: May 13, 2021Date of Patent: November 7, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Ren Wang, Hung-Hua Lin, Yuan-Chih Hsieh
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Publication number: 20230249961Abstract: The present disclosure provides a micro electro mechanical system (MEMS) structure, including a device substrate having a first region and a second region different from the first region, a capping substrate bonded over the device substrate, a first cavity in the first region and between the device substrate and capping substrate, wherein the first cavity has a first cavity pressure, a second cavity in the second region and between the device substrate and capping substrate, wherein the second cavity has a second cavity pressure lower than the first cavity pressure, an outgassing material, wherein the outgassing material includes a top surface and a sidewall exposed to the first cavity, the outgassing material is free from being in direct contact with the capping substrate, wherein the outgassing material includes a trench, and a passivation layer disposed over the device substrate, and is in direct contact with the outgassing material.Type: ApplicationFiled: April 18, 2023Publication date: August 10, 2023Inventors: YUAN-CHIH HSIEH, HUNG-HUA LIN
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Patent number: 11634318Abstract: The present disclosure provides a micro electro mechanical system (MEMS) structure, including a device substrate having a first region and a second region different from the first region, a capping substrate bonded over the device substrate, a first cavity in the first region and between the device substrate and capping substrate, wherein the first cavity has a first cavity pressure, a second cavity in the second region and between the device substrate and capping substrate, wherein the second cavity has a second cavity pressure lower than the first cavity pressure, a passivation layer in the first cavity, an outgassing material over the passivation layer, wherein the outgassing material comprises a top surface and a sidewall exposed to the first cavity.Type: GrantFiled: October 28, 2019Date of Patent: April 25, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Yuan-Chih Hsieh, Hung-Hua Lin
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Publication number: 20220340413Abstract: The present disclosure provides a micro electro mechanical system (MEMS) structure, including a device substrate having a first region and a second region different from the first region, a capping substrate bonded over the device substrate, a first cavity in the first region and between the device substrate and capping substrate, wherein the first cavity has a first cavity pressure, a second cavity in the second region and between the device substrate and capping substrate, wherein the second cavity has a second cavity pressure lower than the first cavity pressure, an outgassing material, wherein the outgassing material includes a top surface and a sidewall exposed to the first cavity, the outgassing material is free from being in direct contact with the capping substrate, wherein the outgassing material includes a trench, and a passivation layer disposed over the device substrate, and is in direct contact with the outgassing material.Type: ApplicationFiled: July 12, 2022Publication date: October 27, 2022Inventors: YUAN-CHIH HSIEH, HUNG-HUA LIN
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Publication number: 20220325396Abstract: A microstructure may be provided by forming a metal layer such as a molybdenum layer over a substrate. An aluminum nitride layer is formed on a top surface of the metal layer. A surface portion of the aluminum nitride layer is converted into a continuous aluminum oxide-containing layer by oxidation. A dielectric spacer layer may be formed over the continuous aluminum oxide-containing layer. Contact via cavities extending through the dielectric spacer layer, the continuous aluminum oxide containing layer, and the aluminum nitride layer and down to a respective portion of the at least one metal layer may be formed using etch processes that contain a wet etch step while suppressing formation of an undercut in the aluminum nitride layer. Contact via structures may be formed in the contact via cavities. The microstructure may include a micro-electromechanical system (MEMS) device containing a piezoelectric transducer.Type: ApplicationFiled: June 17, 2022Publication date: October 13, 2022Inventors: Yuan-Chih Hsieh, Yi-Ren Wang, Hung-Hua Lin
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Publication number: 20220219973Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip, where the method includes forming an interconnect structure over a first substrate. A dielectric structure is formed over the interconnect structure. The dielectric structure comprises opposing sidewalls defining an opening. A conductive bonding structure is formed on a second substrate. A bonding process is performed to bond the conductive bonding structure to the interconnect structure. The conductive bonding structure is disposed in the opening. The bonding process defines a first cavity between inner opposing sidewalls of the conductive bonding structure and a second cavity between the conducive bonding structure and the opposing sidewalls of the dielectric structure.Type: ApplicationFiled: March 29, 2022Publication date: July 14, 2022Inventors: Hung-Hua Lin, Chia-Ming Hung, Xin-Hua Huang, Yuan-Chih Hsieh
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Publication number: 20220216052Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.Type: ApplicationFiled: March 21, 2022Publication date: July 7, 2022Inventors: Xin-Hua Huang, Ping-Yin Liu, Hung-Hua Lin, Hsun-Chung Kuang, Yuan-Chih Hsieh, Lan-Lin Chao, Chia-Shiung Tsai, Xiaomeng Chen
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Publication number: 20220204340Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.Type: ApplicationFiled: March 16, 2022Publication date: June 30, 2022Inventors: Hung-Hua Lin, Chang-Ming Wu, Chung-Yi Yu, Ping-Yin Liu, Jung-Huei Peng
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Patent number: 11371133Abstract: A microstructure may be provided by forming a metal layer such as a molybdenum layer over a substrate. An aluminum nitride layer is formed on a top surface of the metal layer. A surface portion of the aluminum nitride layer is converted into a continuous aluminum oxide-containing layer by oxidation. A dielectric spacer layer may be formed over the continuous aluminum oxide-containing layer. Contact via cavities extending through the dielectric spacer layer, the continuous aluminum oxide-containing layer, and the aluminum nitride layer and down to a respective portion of the at least one metal layer may be formed using etch processes that contain a wet etch step while suppressing formation of an undercut in the aluminum nitride layer. Contact via structures may be formed in the contact via cavities. The microstructure may include a micro-electromechanical system (MEMS) device containing a piezoelectric transducer.Type: GrantFiled: July 17, 2020Date of Patent: June 28, 2022Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Yuan-Chih Hsieh, Yi-Ren Wang, Hung-Hua Lin