Abstract: A biological sensing structure includes a mesa integrally connected a portion of a substrate, wherein the mesa has a top surface and a sidewall surface adjacent to the top surface. The biological sensing structure includes a first light reflecting layer over the top surface and the sidewall surface of the mesa. The biological sensing structure includes a filling material surrounding the mesa, wherein the mesa protrudes from the filling material. The biological sensing structure includes a stop layer over the filling material and a portion of the first light reflecting layer. The biological sensing structure includes a second light reflecting layer over a portion of the stop layer and a portion of the top surface of the mesa. The biological sensing structure includes an opening in the second light reflecting layer to partially expose the top surface of the mesa.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.

Abstract: A microelectromechanical systems (MEMS) package includes a eutectic bonding structure free of a native oxide layer and an anti-stiction layer, while also including a MEMS device having a top surface and sidewalls lined with the anti-stiction layer. The MEMS device is arranged within a MEMS substrate having a first eutectic bonding substructure arranged thereon. A cap substrate having a second eutectic bonding substructure arranged thereon is eutectically bonded to the MEMS substrate with a eutectic bond at the interface of the first and second eutectic bonding substructures. The anti-stiction layer lines a top surface and sidewalls of the MEMS device, but not the first and second eutectic bonding substructures. A method for manufacturing the MEMS package and a process system for selective plasma treatment are also provided.

Abstract: A biological sensing structure includes a mesa integrally connected a portion of a substrate, wherein the mesa has a top surface and a sidewall surface adjacent to the top surface. The biological sensing structure includes a first light reflecting layer over the top surface and the sidewall surface of the mesa. The biological sensing structure includes a filling material surrounding the mesa, wherein the mesa protrudes from the filling material. The biological sensing structure includes a stop layer over the filling material and a portion of the first light reflecting layer. The biological sensing structure includes a second light reflecting layer over a portion of the stop layer and a portion of the top surface of the mesa. The biological sensing structure includes an opening in the second light reflecting layer to partially expose the top surface of the mesa.

Abstract: A method includes receiving a wafer stack having at least two wafers bonded together. At least one blade is inserted between a first wafer of the at least two wafers and a second wafer of the at least two wafers. The blade has a channel configured to inject air or fluid. The first wafer is debonded from the second wafer using the at least one blade. In another embodiment, a detacher having a convex bottom surface is attached to the wafer stack. The first wafer is debonded from the second wafer using the detacher.

Abstract: In some embodiments, the present disclosure relates to a MEMs (micro-electromechanical system) package device having a getter layer. The MEMs package includes a first substrate having a cavity located within an upper surface of the first substrate. The cavity has roughened interior surfaces. A getter layer is arranged onto the roughened interior surfaces of the cavity. A bonding layer is arranged on the upper surface of the first substrate on opposing sides of the cavity, and a second substrate bonded to the first substrate by the bonding layer. The second substrate is arranged over the cavity. The roughened interior surfaces of the cavity enables more effective absorption of residual gases, thereby increasing the efficiency of a gettering process.

Abstract: A device is described in one embodiment that includes a micro-electro-mechanical systems (MEMS) device disposed on a first substrate and a semiconductor device disposed on a second substrate. A bond electrically connects the MEMS device and the semiconductor device. The bond includes an interface between a first bonding layer including silicon on the first substrate and a second bonding layer including aluminum on the second substrate. The physical interface between the aluminum and silicon (e.g., amorphous silicon) can provide an electrical connection.

Abstract: A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

Abstract: The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by depositing a gettering material on a roughened substrate surface, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having residual gases. One or more cavities are formed in the substrate at locations between bonding areas on a top surface of the substrate. Respective cavities have roughened interior surfaces that vary in a plurality of directions. A getter layer is deposited into the one or more cavities. The roughened interior surfaces of the one or more cavities enable the substrate to more effectively absorb the residual gases, thereby increasing the efficiency of the gettering process.

Abstract: A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

Abstract: A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a MEMS device in a MEMS area, where a first metal layer is connected to a first metal connect adjacent the MEMS area and a cap is over the MEMS area to vacuum seal the MEMS area. A first wafer portion is over and bonded to the first metal layer which connects the first metal connect to a first I/O port using metal routing. The first metal layer and the first wafer portion bond requires 10% less bonding area than a bond not including the first metal layer. The semiconductor arrangement including the first metal layer has increased conductivity and requires less processing than an arrangement that requires a dopant implant to connect a first metal connect to a first I/O port and has a better vacuum seal due to a reduction in outgassing.

Abstract: The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by depositing a gettering material on a roughened substrate surface, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having residual gases. One or more cavities are formed in the substrate at locations between bonding areas on a top surface of the substrate. Respective cavities have roughened interior surfaces that vary in a plurality of directions. A getter layer is deposited into the one or more cavities. The roughened interior surfaces of the one or more cavities enable the substrate to more effectively absorb the residual gases, thereby increasing the efficiency of the gettering process.

Abstract: A biological sensing structure includes a mesa integrally connected a portion of a substrate, wherein the mesa has a top surface and a sidewall surface adjacent to the top surface. The biological sensing structure includes a first light reflecting layer over the top surface and the sidewall surface of the mesa. The biological sensing structure includes a filling material surrounding the mesa, wherein the mesa protrudes from the filling material. The biological sensing structure includes a stop layer over the filling material and a portion of the first light reflecting layer. The biological sensing structure includes a second light reflecting layer over a portion of the stop layer and a portion of the top surface of the mesa. The biological sensing structure includes an opening in the second light reflecting layer to partially expose the top surface of the mesa.

Abstract: Systems and methods of separating bonded wafers are disclosed. In one embodiment, a system for separating bonded wafers includes a support for the bonded wafers and means for applying a sheer force to the bonded wafers. The system also includes means for applying a vacuum to the bonded wafers.

Abstract: A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

Abstract: A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.

Abstract: A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

Abstract: A method of forming of biological sensing structures including a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A first light reflecting layer is deposited over the top surface and the sidewall surface of each mesa. A filling material is formed over a first portion of the first light reflecting layer. A stop layer is deposited over the filling material and a second portion of the first light reflecting layer. A sacrificial layer is formed over the stop layer and is planarized exposing the stop layer. A first opening is formed in the stop layer and the first light reflecting layer. A second light reflecting layer is deposited over the first opening. A second opening is formed in the second light reflecting layer.

Abstract: Methods for hybrid wafer bonding. In an embodiment, a method is disclosed that includes forming a metal pad layer in a dielectric layer over at least two semiconductor substrates; performing chemical mechanical polishing on the semiconductor substrates to expose a surface of the metal pad layer and planarize the dielectric layer to form a bonding surface on each semiconductor substrate; performing an oxidation process on the at least two semiconductor substrates to oxidize the metal pad layer to form a metal oxide; performing an etch to remove the metal oxide, recessing the surface of the metal pad layer from the bonding surface of the dielectric layer of each of the at least two semiconductor substrates; physically contacting the bonding surfaces of the at least two semiconductor substrates; and performing a thermal anneal to form bonds between the metal pads of the semiconductor substrates. Additional methods are disclosed.