Patents by Inventor Hung-Hua Lin
Hung-Hua Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11371133Abstract: A microstructure may be provided by forming a metal layer such as a molybdenum layer over a substrate. An aluminum nitride layer is formed on a top surface of the metal layer. A surface portion of the aluminum nitride layer is converted into a continuous aluminum oxide-containing layer by oxidation. A dielectric spacer layer may be formed over the continuous aluminum oxide-containing layer. Contact via cavities extending through the dielectric spacer layer, the continuous aluminum oxide-containing layer, and the aluminum nitride layer and down to a respective portion of the at least one metal layer may be formed using etch processes that contain a wet etch step while suppressing formation of an undercut in the aluminum nitride layer. Contact via structures may be formed in the contact via cavities. The microstructure may include a micro-electromechanical system (MEMS) device containing a piezoelectric transducer.Type: GrantFiled: July 17, 2020Date of Patent: June 28, 2022Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Yuan-Chih Hsieh, Yi-Ren Wang, Hung-Hua Lin
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Patent number: 11292715Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device including a conductive bonding structure disposed between a substrate and a MEMS substrate. An interconnect structure overlies the substrate. The MEMS substrate overlies the interconnect structure and includes a moveable membrane. A dielectric structure is disposed between the interconnect structure and the MEMS substrate. The conductive bonding structure is sandwiched between the interconnect structure and the MEMS substrate. The conductive bonding structure is spaced laterally between sidewalls of the dielectric structure. The conductive bonding structure, the MEMS substrate, and the interconnect structure at least partially define a cavity. The moveable membrane overlies the cavity and is spaced laterally between sidewalls of the conductive bonding structure.Type: GrantFiled: October 15, 2019Date of Patent: April 5, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Hua Lin, Chia-Ming Hung, Xin-Hua Huang, Yuan-Chih Hsieh
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Patent number: 11282697Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.Type: GrantFiled: September 12, 2019Date of Patent: March 22, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Xin-Hua Huang, Ping-Yin Liu, Hung-Hua Lin, Hsun-Chung Kuang, Yuan-Chih Hsieh, Lan-Lin Chao, Chia-Shiung Tsai, Xiaomeng Chen
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Patent number: 11279615Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.Type: GrantFiled: April 15, 2019Date of Patent: March 22, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Hua Lin, Chang-Ming Wu, Chung-Yi Yu, Ping-Yin Liu, Jung-Huei Peng
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Publication number: 20220024756Abstract: A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.Type: ApplicationFiled: October 8, 2021Publication date: January 27, 2022Inventors: Kuei-Sung CHANG, Tai-Bang An, Chun-Wen Cheng, Hung-Hua Lin
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Publication number: 20220018009Abstract: A microstructure may be provided by forming a metal layer such as a molybdenum layer over a substrate. An aluminum nitride layer is formed on a top surface of the metal layer. A surface portion of the aluminum nitride layer is converted into a continuous aluminum oxide-containing layer by oxidation. A dielectric spacer layer may be formed over the continuous aluminum oxide-containing layer. Contact via cavities extending through the dielectric spacer layer, the continuous aluminum oxide-containing layer, and the aluminum nitride layer and down to a respective portion of the at least one metal layer may be formed using etch processes that contain a wet etch step while suppressing formation of an undercut in the aluminum nitride layer. Contact via structures may be formed in the contact via cavities. The microstructure may include a micro-electromechanical system (MEMS) device containing a piezoelectric transducer.Type: ApplicationFiled: July 17, 2020Publication date: January 20, 2022Inventors: Yuan-Chih Hsieh, Yi-Ren Wang, Hung-Hua Lin
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Patent number: 11180363Abstract: A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.Type: GrantFiled: February 7, 2020Date of Patent: November 23, 2021Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Kuei-Sung Chang, Tai-Bang An, Chun-wen Cheng, Hung-Hua Lin
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Patent number: 11130670Abstract: A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.Type: GrantFiled: April 22, 2019Date of Patent: September 28, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Ying Tsai, Hung-Hua Lin, Hsin-Ting Huang, Lung Yuan Pan, Jung-Huei Peng, Yao-Te Huang
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Publication number: 20210265557Abstract: In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.Type: ApplicationFiled: May 13, 2021Publication date: August 26, 2021Inventors: Yi-Ren Wang, Hung-Hua Lin, Yuan-Chih Hsieh
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Publication number: 20210246014Abstract: A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.Type: ApplicationFiled: February 7, 2020Publication date: August 12, 2021Inventors: Kuei-Sung Chang, Tai-Bang An, Chun-wen Cheng, Hung-Hua Lin
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Patent number: 11050012Abstract: In some embodiments, the present disclosure relates to a method for forming a microelectromechanical system (MEMS) device, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.Type: GrantFiled: April 1, 2019Date of Patent: June 29, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Ren Wang, Hung-Hua Lin, Yuan-Chih Hsieh
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Publication number: 20210122625Abstract: The present disclosure provides a micro electro mechanical system (MEMS) structure, including a device substrate having a first region and a second region different from the first region, a capping substrate bonded over the device substrate, a first cavity in the first region and between the device substrate and capping substrate, wherein the first cavity has a first cavity pressure, a second cavity in the second region and between the device substrate and capping substrate, wherein the second cavity has a second cavity pressure lower than the first cavity pressure, a passivation layer in the first cavity, an outgassing material over the passivation layer, wherein the outgassing material comprises a top surface and a sidewall exposed to the first cavity.Type: ApplicationFiled: October 28, 2019Publication date: April 29, 2021Inventors: YUAN-CHIH HSIEH, HUNG-HUA LIN
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Patent number: 10981781Abstract: A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a MEMS device in a MEMS area, where a first metal layer is connected to a first metal connect adjacent the MEMS area and a cap is over the MEMS area to vacuum seal the MEMS area. A first wafer portion is over and bonded to the first metal layer which connects the first metal connect to a first I/O port using metal routing. The first metal layer and the first wafer portion bond requires 10% less bonding area than a bond not including the first metal layer. The semiconductor arrangement including the first metal layer has increased conductivity and requires less processing than an arrangement that requires a dopant implant to connect a first metal connect to a first I/O port and has a better vacuum seal due to a reduction in outgassing.Type: GrantFiled: November 4, 2019Date of Patent: April 20, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Hsin-Ting Huang, Hsiang-Fu Chen, Wen-Chuan Tai, Chia-Ming Hung, Shao-Chi Yu, Hung-Hua Lin, Yuan-Chih Hsieh
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Publication number: 20200407220Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device including a conductive bonding structure disposed between a substrate and a MEMS substrate. An interconnect structure overlies the substrate. The MEMS substrate overlies the interconnect structure and includes a moveable membrane. A dielectric structure is disposed between the interconnect structure and the MEMS substrate. The conductive bonding structure is sandwiched between the interconnect structure and the MEMS substrate. The conductive bonding structure is spaced laterally between sidewalls of the dielectric structure. The conductive bonding structure, the MEMS substrate, and the interconnect structure at least partially define a cavity. The moveable membrane overlies the cavity and is spaced laterally between sidewalls of the conductive bonding structure.Type: ApplicationFiled: October 15, 2019Publication date: December 31, 2020Inventors: Hung-Hua Lin, Chia-Ming Hung, Xin-Hua Huang, Yuan-Chih Hsieh
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Publication number: 20200313073Abstract: In some embodiments, the present disclosure relates to a method for forming a microelectromechanical system (MEMS) device, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.Type: ApplicationFiled: April 1, 2019Publication date: October 1, 2020Inventors: Yi-Ren Wang, Hung-Hua Lin, Yuan-Chih Hsieh
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Patent number: 10781098Abstract: A method of manufacturing a semiconductor structure includes receiving a first substrate including a first dielectric layer disposed over the first substrate and a first conductive structure surrounded by the first dielectric layer; receiving a second substrate including a second dielectric layer disposed over the second substrate and a second conductive structure surrounded by the second dielectric layer; bonding the first dielectric layer with the second dielectric layer; and bonding the first conductive structure with the second conductive structure.Type: GrantFiled: May 6, 2019Date of Patent: September 22, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Hung-Hua Lin, Ping-Yin Liu, Kuan-Liang Liu, Chia-Shiung Tsai, Alexander Kalnitsky
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Patent number: 10665449Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.Type: GrantFiled: September 19, 2016Date of Patent: May 26, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Xin-Hua Huang, Ping-Yin Liu, Hung-Hua Lin, Hsun-Chung Kuang, Yuan-Chih Hsieh, Lan-Lin Chao, Chia-Shiung Tsai, Xiaomeng Chen
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Publication number: 20200062587Abstract: A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a MEMS device in a MEMS area, where a first metal layer is connected to a first metal connect adjacent the MEMS area and a cap is over the MEMS area to vacuum seal the MEMS area. A first wafer portion is over and bonded to the first metal layer which connects the first metal connect to a first I/O port using metal routing. The first metal layer and the first wafer portion bond requires 10% less bonding area than a bond not including the first metal layer. The semiconductor arrangement including the first metal layer has increased conductivity and requires less processing than an arrangement that requires a dopant implant to connect a first metal connect to a first I/O port and has a better vacuum seal due to a reduction in outgassing.Type: ApplicationFiled: November 4, 2019Publication date: February 27, 2020Inventors: Hsin-Ting Huang, Hsiang-Fu Chen, Wen-Chuan Tai, Chia-Ming Hung, Shao-Chi Yu, Hung-Hua Lin, Yuan-Chih Hsieh
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Publication number: 20200006052Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.Type: ApplicationFiled: September 12, 2019Publication date: January 2, 2020Inventors: Xin-Hua Huang, Ping-Yin Liu, Hung-Hua Lin, Hsun-Chung Kuang, Yuan-Chih Hsieh, Lan-Lin Chao, Chia-Shiung Tsai, Xiaomeng Chen
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Patent number: 10464808Abstract: A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a MEMS device in a MEMS area, where a first metal layer is connected to a first metal connect adjacent the MEMS area and a cap is over the MEMS area to vacuum seal the MEMS area. A first wafer portion is over and bonded to the first metal layer which connects the first metal connect to a first I/O port using metal routing. The first metal layer and the first wafer portion bond requires 10% less bonding area than a bond not including the first metal layer. The semiconductor arrangement including the first metal layer has increased conductivity and requires less processing than an arrangement that requires a dopant implant to connect a first metal connect to a first I/O port and has a better vacuum seal due to a reduction in outgassing.Type: GrantFiled: October 2, 2017Date of Patent: November 5, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Hsin-Ting Huang, Hsiang-Fu Chen, Wen-Chuan Tai, Chia-Ming Hung, Shao-Chi Yu, Hung-Hua Lin, Yuan-Chih Hsieh