Patents by Inventor Hyeon Shin

Hyeon Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220139461
    Abstract: There are provided a memory device and an operating method thereof. The memory device includes: a memory block including a plurality of memory cells and a plurality of select transistors; a peripheral circuit for performing a program operation on selected select transistors among the plurality of select transistors in a select transistor program operation; and a control logic for controlling the peripheral circuit to perform the select transistor program operation. The peripheral circuit applies a coupling voltage having a positive potential to a source line of the memory block in the select transistor program operation.
    Type: Application
    Filed: May 7, 2021
    Publication date: May 5, 2022
    Applicant: SK hynix Inc.
    Inventors: Hyung Jin CHOI, Jae Hyeon SHIN, In Gon YANG, Sungmook LIM
  • Publication number: 20220122687
    Abstract: A memory device includes a page buffer, a voltage generator, and a test controller. The page buffer is connected to a memory cell through a bit line, and is configured to sense a threshold voltage of the memory cell through a potential of a sensing node electrically connected to the bit line. The voltage generator is configured to generate a test voltage to be applied to the sensing node. The test controller is configured to control the voltage generator to apply the test voltage to the sensing node, and detect a defect of the page buffer, based on a leakage current value of the sensing node.
    Type: Application
    Filed: April 23, 2021
    Publication date: April 21, 2022
    Applicant: SK hynix Inc.
    Inventors: In Gon YANG, Tae Ho KIM, Jae Hyeon SHIN, Sungmook LIM
  • Patent number: 11299669
    Abstract: The invention described in the present specification relates to a color conversion film including a resin matrix; and an organic fluorescent substance dispersed in the resin matrix, and absorbing blue or green light and emitting light having a wavelength different from the absorbing light, wherein the resin matrix includes a thermoplastic resin, and the color conversion film has a light emission peak with a FWHM of 60 nm or less, quantum efficiency of 80% or greater and an absorption coefficient of 30,000 M?1cm?1 or greater at a maximum absorption wavelength when irradiating light having a light emission peak at 450 nm, a FWHM of 40 nm or less and monomodal light emission intensity distribution, a method for preparing the same, and a backlight unit including the color conversion film.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: April 12, 2022
    Assignee: LG CHEM, LTD.
    Inventors: Dong Mok Shin, Sehwan Son, Hoyong Lee, Byeong In Ahn, Du Hyeon Shin, Nari Kim, Ji Ho Kim, Joo Yeon Seo
  • Publication number: 20220084612
    Abstract: The present technology relates to an electronic device. For example, the present technology relates to a memory device and a method of operating the memory device. A memory device according to an embodiment includes a memory cell, a page buffer, and a test performer configured to control the page buffer to sequentially apply a first test voltage and a second test voltage of a level lower than a level of the first test voltage to a sensing node of the page buffer through a bit line, and detect a defect of the sensing node according to whether a potential level of the sensing node is changed.
    Type: Application
    Filed: March 10, 2021
    Publication date: March 17, 2022
    Applicant: SK hynix Inc.
    Inventors: Sungmook LIM, In Gon YANG, Jae Hyeon SHIN, Hyung Jin CHOI
  • Publication number: 20220068388
    Abstract: A memory device capable of reducing a peak current includes a plurality of memory cell strings each including a plurality of memory cells connected between a common source line and a bit line, a source select line connected between the common source line and the plurality of memory cells, and a drain select line connected between the bit line and the plurality of memory cells. A method for operating the memory device includes: precharging channel regions of a plurality of memory cell strings through a common source line; and setting a bit line voltage applied to the bit line, after starting precharging the channel regions of the plurality of memory cell strings, while the channel regions of the plurality of memory cell strings are being precharged.
    Type: Application
    Filed: March 3, 2021
    Publication date: March 3, 2022
    Applicant: SK hynix Inc.
    Inventors: Jae Hyeon SHIN, Tae Ho KIM, In Gon YANG, Sungmook LIM
  • Publication number: 20220059167
    Abstract: A memory device includes a plurality of memory cell strings, a peripheral circuit, and control logic, The plurality of memory cell strings are connected between a bit line and a common source line. The peripheral circuit is configured to perform a channel precharge operation and a program operation for the plurality of memory cell strings. The control logic is configured to control the peripheral circuit to apply a pass voltage to a selected word line among a plurality of word lines connected to the plurality of memory cell strings and to apply a turn-on voltage to a source select line connected to the plurality of memory cell strings, during a portion of a period in which the pass voltage is applied to the selected word line, in the program operation.
    Type: Application
    Filed: February 23, 2021
    Publication date: February 24, 2022
    Applicant: SK hynix Inc.
    Inventors: Jae Hyeon SHIN, In Gon YANG, Sungmook LIM
  • Publication number: 20220051723
    Abstract: Provided herein is a semiconductor memory device and a method of operating the same, The semiconductor memory device includes a memory block, a peripheral circuit, and a control logic. The memory block includes a plurality of sub-blocks coupled to a plurality of source select lines, respectively. The peripheral circuit performs a program operation on the memory block. The control logic is configured to control the peripheral circuit to increase a voltage of a common source line that is coupled to the memory block, increase a voltage of at least one source select line, among the plurality of source select lines, to a first voltage level, and set a voltage of a bit line that is coupled to the memory block and increase the voltage of at least one source select line from the first voltage level to a second voltage level.
    Type: Application
    Filed: February 16, 2021
    Publication date: February 17, 2022
    Applicant: SK hynix Inc.
    Inventors: Jae Hyeon SHIN, Tae Ho KIM, In Gon YANG, Sungmook LIM
  • Publication number: 20220028462
    Abstract: A memory device may include a first sub-block and a second sub-block each including a plurality of select transistors and a plurality of memory cells, a peripheral circuit performing a read operation on data stored in the first sub-block, and a control logic controlling the peripheral circuit to turn on the plurality of select transistors included in each of the first and second sub-blocks and apply a read voltage to a selected word line among a plurality of word lines.
    Type: Application
    Filed: January 11, 2021
    Publication date: January 27, 2022
    Inventors: Jae Hyeon SHIN, Gwi Han KO, Sung Hun KIM, Gwan PARK, Hyun Soo LEE
  • Publication number: 20210407316
    Abstract: Proposed is a posture comparison and correction method using an application configured to check two golf images and result data in an overlapping state, the posture comparison and correction method being capable of analyzing an image of a user captured through a portable device, displaying the swing speed of a golf club, the swing angle of the golf club, the swing form of the golf club, the angle of a head of the golf club, the hitting angle of a golf ball, the speed of the golf ball, the flying distance of the golf ball, and the trajectory of the golf ball on a screen, and comparing the image of the user with an image of a pro golfer transmitted from a server on a single screen, whereby it is possible to correct the posture of the user.
    Type: Application
    Filed: November 24, 2020
    Publication date: December 30, 2021
    Inventors: Seong Hyeon SHIN, Chang Hee PARK, Eun Hye PARK, Bok Cheon MUN
  • Patent number: 11056176
    Abstract: A memory device having improved read reliability includes: first blocks coupled to a first global line group and second blocks coupled to a second global line group; a voltage generator configured to generate an operating voltage for an operation performed on the first blocks and the second blocks; a block decoder configured to generate a block select signal for selecting a memory block on which a main operation is to be performed from among the first blocks as a selected block; and a block voltage controller configured to control the block decoder and the voltage generator to: perform a channel initializing operation of discharging channel regions of the selected block and a shared block which is selected from among the second blocks according to the block select signal; and perform a word line floating operation on the selected block and the shared block after the channel initializing operation.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: July 6, 2021
    Assignee: SK hynix Inc.
    Inventor: Jae Hyeon Shin
  • Publication number: 20210158871
    Abstract: A memory device includes a memory block, a peripheral circuit, and a program operation controller. The memory block includes a first sub block connected to a first drain select line and a first source select line, and a second sub block connected to a second drain select line and a second source select line, and is connected to a plurality of word lines and a common source line. The program operation controller controls the peripheral circuit to transfer a precharge voltage to the channel region through the common source line or a plurality of bit lines connected the memory block, and to apply a control voltage to the first and second source select lines at different time points or to apply the control voltage to the first and second drain select lines at different time points in the step of precharging the channel region.
    Type: Application
    Filed: April 23, 2020
    Publication date: May 27, 2021
    Inventors: Jae Hyeon SHIN, Gwi Han KO, Sung Hun KIM, Hyung Jin CHOI
  • Patent number: 10927293
    Abstract: Provided is a core-shell structured fluorescent complex comprising: a core portion comprising therein a polymer and a fluorescent material; and a shell portion including silica or alumina covering at least a part of a surface of the core portion, wherein the fluorescent material is included in greater than or equal to 0.01 parts by weight and less than or equal to 50 parts by weight with respect to 100 parts by weight of the polymer, and wherein the polymer is an ionic polymer or ionic polymer resin and has a weight average molecular weight of greater than or equal to 1,000 and less than or equal to 300,000, a light conversion film including the core-shell structured fluorescent complex, and an electronic device including the same.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: February 23, 2021
    Assignee: LG CHEM, LTD.
    Inventors: Du Hyeon Shin, Youkyong Seo
  • Publication number: 20200349959
    Abstract: An inventive concept relates to an audio coding method to which CNN-based frequency spectrum recovery is applied. An inventive concept transmits a part of frequency spectral coefficients generated in transform coding to a decoder and the decoder recovers the frequency spectral coefficient not transmitted. Furthermore, the signs of frequency spectral coefficient are transmitted from an encoder to the decoder depending on a sign transmission rule.
    Type: Application
    Filed: April 8, 2020
    Publication date: November 5, 2020
    Applicants: Electronics and Telecommunications Research Institute, Kwangwoon University Industry-Academic Collaboration Foundation
    Inventors: Hochong PARK, Seung Kwon BEACK, Jongmo SUNG, Seong-Hyeon SHIN, Mi Suk LEE, Tae Jin LEE, Jin Soo CHOI
  • Publication number: 20200294571
    Abstract: A memory device having improved read reliability includes: first blocks coupled to a first global line group and second blocks coupled to a second global line group; a voltage generator configured to generate an operating voltage for an operation performed on the first blocks and the second blocks; a block decoder configured to generate a block select signal for selecting a memory block on which a main operation is to be performed from among the first blocks as a selected block; and a block voltage controller configured to control the block decoder and the voltage generator to: perform a channel initializing operation of discharging channel regions of the selected block and a shared block which is selected from among the second blocks according to the block select signal; and perform a word line floating operation on the selected block and the shared block after the channel initializing operation.
    Type: Application
    Filed: December 12, 2019
    Publication date: September 17, 2020
    Inventor: Jae Hyeon SHIN
  • Patent number: 10630394
    Abstract: A method performed by at least one processor of a wireless communication apparatus including a plurality of internal components, the method includes generating a plurality of sets of noise information corresponding to a plurality of test noise signals generated by the plurality of internal components under a plurality of state conditions, receiving a radio frequency (RF) signal, determining a magnitude of a noise signal that interferes with the RF signal by using a set of noise information corresponding to a current state condition from among the plurality of sets of noise information, and performing noise filtering on the RF signal based on a magnitude of the RF signal and the magnitude of the noise signal.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: April 21, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hae-chul Lee, Seong-ho Kim, Sung-won Park, Uk-hyeon Shin, Sang-un Oh, Seung-yup Lee, Jong-Min Lee, Jung-su Han
  • Patent number: 10607688
    Abstract: A method of operating a memory device, the method including matching a voltage of a selected word line, among word lines coupled to the plurality of memory cells, with a voltage of unselected word lines. The method including precharging a channel region of the plurality of memory cell strings through the common source line while discharging the selected word line and the unselected word lines.
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: March 31, 2020
    Assignee: SK hynix Inc.
    Inventors: Jae Hyeon Shin, Sung Hyun Hwang
  • Patent number: 10597581
    Abstract: The invention described in the present specification relates to a color conversion film including a resin matrix; and an organic fluorescent substance dispersed in the resin matrix, wherein the organic fluorescent substance includes a green fluorescent substance having a maximum light emission wavelength in a 510 nm to 560 nm range when irradiating light including a 450 nm wavelength, and a red fluorescent substance having a maximum light emission wavelength in a 600 nm to 660 nm range when irradiating light including a 450 nm wavelength, the green fluorescent substance and the red fluorescent substance have a molar ratio of 5:1 to 50:1, and the color conversion film has a light emission peak with a full width at half maximum (FWHM) of 50 nm or less in a 510 nm to 560 nm range and a light emission peak with a FWHM of 90 nm or less in a 600 nm to 660 nm range when irradiating light, a method for preparing the same, and a backlight unit including the color conversion film.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: March 24, 2020
    Assignee: LG CHEM, LTD.
    Inventors: Nari Kim, Sehwan Son, Dong Mok Shin, Ji Ho Kim, Joo Yeon Seo, Byeong In Ahn, Du Hyeon Shin
  • Patent number: 10500783
    Abstract: A method of duplicating texture and pattern of a natural material using a low temperature embossing process is provided. More particularly, in the method of duplicating texture and pattern of a natural material using a low temperature embossing process, a polymer resin having low glass transition temperature is coated on a surface of the natural material and then low temperature embossing process is performed thereon at a specific temperature and a specific pressure to duplicate a distinct texture and a fine pattern of the natural material as they are, thereby improving luxurious and aesthetic properties and achieving a large area and mass production, such that it may be applied to interior and exterior materials of a car, a case of a cellular phone and a laptop, home appliances, or the like.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: December 10, 2019
    Assignees: Hyundai Motor Company, Kia Motors Corporation, Korea University Research and Business Foundation
    Inventors: Jin Ho Hwang, Keon Soo Jin, Dae Ig Jung, Ju Hyeon Shin, Heon Lee
  • Publication number: 20190355408
    Abstract: A method of operating a memory device, the method including matching a voltage of a selected word line, among word lines coupled to the plurality of memory cells, with a voltage of unselected word lines. The method including precharging a channel region of the plurality of memory cell strings through the common source line while discharging the selected word line and the unselected word lines.
    Type: Application
    Filed: January 10, 2019
    Publication date: November 21, 2019
    Applicant: SK hynix Inc.
    Inventors: Jae Hyeon SHIN, Sung Hyun HWANG
  • Patent number: 10407614
    Abstract: The present application relates to a light conversion film in which one or more types of organic fluorescent dyes are dispersed in a polymer medium including one or more types of ionic polymers, and a light conversion device, a backlight unit and a display apparatus including the same.
    Type: Grant
    Filed: February 5, 2016
    Date of Patent: September 10, 2019
    Assignee: LG CHEM, LTD.
    Inventors: Du Hyeon Shin, Youkyong Seo, Jungho Lim, Ji Ho Kim