Abstract: Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used.

Abstract: Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating resistors and diodes. A node to which electrical connection is to be made is provided. An electrically insulative layer is provided outwardly of the node. An opening is provided in the electrically insulative layer over the node. The opening is filled with semiconductive material which depending on configuration serves as one or both of a vertically elongated diode and resistor.

Abstract: Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating resistors and diodes. A node to which electrical connection is to be made is provided. An electrically insulative layer is provided outwardly of the node. An opening is provided in the electrically insulative layer over the node. The opening is filled with semiconductive material which depending on configuration serves as one or both of a vertically elongated diode and resistor.

Abstract: A method, apparatus and system for controlling a rate of pressure change in a vacuum process chamber during pump down and vent up cycles of a vacuum process are provided. The method includes sensing the pressure in the process chamber, and then controlling the rate of pressure change to achieve a desired rate for a particular vacuum process. For a pump down cycle, the apparatus can include a control valve in flow communication with the process chamber and with an evacuation pump. For a vent up cycle, the apparatus can include a control valve in flow communication with the process chamber and with an inert gas supply. With either embodiment controllers can be programmed to adjust positions of the control valves based upon feedback from pressure sensors. The system can include multiple chambers each having an associated pump down and vent up control apparatus configured to match the rates of pressure change between chambers.

Abstract: Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanomneters. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used.

Abstract: Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating resistors and diodes. A node to which electrical connection is to be made is provided. An electrically insulative layer is provided outwardly of the node. An opening is provided in the electrically insulative layer over the node. The opening is filled with semiconductive material which depending on configuration serves as one or both of a vertically elongated diode and resistor.

Abstract: In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer.

Abstract: In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer.

Abstract: A method, apparatus and system for controlling a rate of pressure change in a vacuum process chamber during pump down and vent up cycles of a vacuum process are provided. The method includes sensing the pressure in the process chamber, and then controlling the rate of pressure change to achieve a desired rate for a particular vacuum process. For a pump down cycle, the apparatus can include a control valve in flow communication with the process chamber and with an evacuation pump. For a vent up cycle, the apparatus can include a control valve in flow communication with the process chamber and with an inert gas supply. With either embodiment controllers can be programmed to adjust positions of the control valves based upon feedback from pressure sensors. The system can include multiple chambers each having an associated pump down and vent up control apparatus configured to match the rates of pressure change between chambers.

Abstract: In one aspect, the invention encompasses a method of manufacturing a stencil mask comprising: a) defining a plurality of opening locations within a substrate; b) providing a dopant within the substrate, the dopant being provided in a pattern to form a plurality of first regions doped to a concentration with a dopant and one or more second regions not doped to the concentration with the dopant, individual first regions surrounding individual opening locations; c) forming a plurality of openings within the opening locations, the individual openings extending into the substrate; and d) forming a stencil mask from the substrate having the openings extending therein.

Abstract: A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; c) covering the outer Si3N4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si3N4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present.

Abstract: An apparatus for semiconductor processing includes: a) at least one support member comprising an upper surface for supporting a semiconductor wafer; b) a component through which the support member extends, the component comprising a front surface and a back surface, at least one of the support member and the component being movable relative to the other of the support member and the component such that the support member can support a wafer in an elevated position above the front surface and can be withdrawn into the component to lower the wafer relative to the front surface of the component; and c) a block joined to the support member below the component back surface, the block engaging the component back surface when the support member upper surface extends above the component to a predetermined distance, the block preventing the support member upper surface from extending beyond the front surface by more than the predetermined distance.

Abstract: A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; c) covering the outer Si3N4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si3N4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present.

Abstract: In one aspect, the invention encompasses an apparatus for semiconductor processing comprising: a) at least one support member comprising an upper surface for supporting a semiconductor wafer; b) a component through which the support member extends, the component comprising a front surface and a back surface, at least one of the support member and the component being movable relative to the other of the support member and the component such that the support member can support a wafer in an elevated position above the front surface and can be withdrawn into the component to lower the wafer relative to the front surface of the component; and c) a block joined to the support member below the component back surface, the block engaging the component back surface when the support member upper surface extends above the component to a predetermined distance, the block preventing the support member upper surface from extending beyond the front surface by more than the predetermined distance.

Abstract: Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used.

Abstract: There are provided methods of making hardmask assemblies or other layered structures, and other masks, including providing an annular seal member between a first surface of layered structure, preferably a hardmask assembly, and a first clamp element, the hardmask assembly comprising at least a hardmask layer; and applying a force between the first clamp element and a second clamp element to hold the hardmask assembly between the annular seal member and the second clamp element In addition, there are provided methods further comprising etching the first surface of the hardmask assembly within the bounds of an interior space defined by the annular seal member. Furthermore, there are provided methods further comprising etching the substrate layer through the hardmask layer and/or removing the hardmask layer after etching the substrate layer.

Abstract: Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used.

Abstract: A method for removing contaminants from a semiconductor wafer having a spin on coating of material. Contaminants are removed by applying a cleaning solution to the periphery, and preferably, the exposed backside of the wafer after the edge bead has been dissolved and removed. The cleaning solution is formulated to react chemically with unwanted coating material residue to form a compound that may be ejected from the periphery of the spinning wafer. Any residual solution or precipitate that is not ejected from the wafer may be rinsed away with water, preferably deoinized water. One exemplary use of this method is the removal of metallic contaminants that may be left on the periphery and backside of a wafer after the formation of ferroelectric film coatings. A cleaning solution comprising a mixture of hydrochloric acid HCl and water H2O or ammonium hydroxide NH4OH and water H2O is applied to the periphery of the spinning wafer.

Abstract: Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used.

Abstract: A method, apparatus and system for fabricating a stencil mask for ion beam and electron beam lithography are provided. The stencil mask includes a silicon substrate, a membrane formed from the substrate, and a mask pattern formed by through openings in the membrane. The method includes defining the mask pattern and membrane area using semiconductor fabrication processes, and then forming the membrane by back side etching the substrate. The apparatus is configured to electrochemically wet etch the substrate, and to equalize pressure on either side of the substrate during the etch process. The system includes an ion implanter for defining a membrane area on the substrate, optical or e-beam pattern generators for patterning various masks on the substrate, a reactive ion etcher for etching the mask pattern in the substrate, and the apparatus for etching the back side of the substrate.