Patents by Inventor Jeng-Horng Chen

Jeng-Horng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHOTOMASK FOR FORMING MULTIPLE LAYER PATTERNS WITH A SINGLE EXPOSURE
    Publication number: 20170110366
    Abstract: The present disclosure provides one embodiment of a mask for a lithography exposure process. The mask includes a mask substrate; a first mask material layer patterned to have a first plurality of openings that define a first layer pattern; and a second mask material layer patterned to have a second plurality of openings that define a second layer pattern.
    Type: Application
    Filed: December 29, 2016
    Publication date: April 20, 2017
    Inventors: Yen-Cheng LU, Chih-Tsung SHIH, Shinn-Sheng YU, Jeng-Horng CHEN, Anthony YEN
  • Extreme ultraviolet lithography collector contamination reduction
    Patent number: 9625824
    Abstract: An extreme ultraviolet (EUV) radiation source module includes a target droplet generator, a first laser source, and a second laser source. The target droplet generator is configured to generate a plurality of target droplets. The first laser source is configured to generate a plurality of first laser pulses that heat the target droplets at respective excitation positions thereby generating a plurality of target plumes. At least one of the target droplets is heated at an excitation position different from that of other target droplets. The second laser source is configured to generate a plurality of second laser pulses that heat the target plumes thereby generating plasma emitting EUV radiation.
    Type: Grant
    Filed: July 20, 2015
    Date of Patent: April 18, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
    Inventors: Yen-Cheng Lu, Jeng-Horng Chen, Shun-Der Wu, Tzu-Hsiang Chen
  • Extreme ultraviolet lithography process and mask with reduced shadow effect and enhanced intensity
    Patent number: 9618837
    Abstract: An extreme ultraviolet (EUV) mask comprises a substrate, a first reflective layer above a surface of the substrate, and a second reflective layer over the first reflective layer. The second reflective layer has various openings that define a first state and a second state. The first state includes the first reflective layer and is free of the second reflective layer. The second state includes both the first and second reflective layers. The first state has a first reflection coefficient and a first reflectivity. The second state has a second reflection coefficient and a second reflectivity. A phase difference between the first and second reflection coefficients is about 180 degrees.
    Type: Grant
    Filed: November 7, 2016
    Date of Patent: April 11, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Method of fabricating an integrated circuit with enhanced defect repairability
    Patent number: 9612531
    Abstract: The present disclosure provides one embodiment of a method for extreme ultraviolet lithography (EUVL) process. The method includes loading a mask to a lithography system. The mask includes defect-repaired regions and defines an integrated circuit (IC) pattern thereon. The method also includes setting an illuminator of the lithography system in an illumination mode according to the IC pattern, configuring a pupil filter in the lithography system according to the illumination mode and performing a lithography exposure process to a target with the mask and the pupil filter by the lithography system in the illumination mode.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: April 4, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Structure and method for reflective-type mask
    Patent number: 9612523
    Abstract: A reflective mask includes a substrate; a reflective multilayer formed on the substrate; an absorber layer formed on the reflective multilayer, wherein the absorber layer is patterned to have openings according to an integrated circuit layout; and a protection layer formed over the reflective multilayer within the openings.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: April 4, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Tsung Shih, Chi-Lun Lu, Jeng-Horng Chen, Chia-Chen Chen, Shinn-Sheng Yu, Anthony Yen, Wei-Hung Liu
  • System and method for photomask particle detection
    Patent number: 9607833
    Abstract: The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: March 28, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shang-Chieh Chien, Shu-Hao Chang, Hsiang-Yu Chou, Kuo-Chang Kau, Shun-Der Wu, Chia-Chen Chen, Jeng-Horng Chen
  • Extreme ultraviolet light (EUV) photomasks and fabrication methods thereof
    Patent number: 9588419
    Abstract: Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A removing process is provided to form an absorber with a top surface lower than a top surface of the capping layer.
    Type: Grant
    Filed: July 27, 2015
    Date of Patent: March 7, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Chih-Tsung Shih, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • MASK CLEANING
    Publication number: 20170060005
    Abstract: A lithography system includes a load lock chamber comprising an opening configured to receive a mask, an exposure module configured to expose a semiconductor wafer to a light source through use of the mask, and a cleaning module embedded inside the lithography tool, the cleaning module being configured to clean carbon particles from the mask.
    Type: Application
    Filed: August 31, 2015
    Publication date: March 2, 2017
    Inventors: Shu-Hao Chang, Norman Chen, Jeng-Horng Chen, Kuo-Chang Kau, Ming-Chin Chien, Shang-Chieh Chien, Anthony Yen, Kevin Huang
  • EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK WITH REDUCED SHADOW EFFECT AND ENHANCED INTENSITY
    Publication number: 20170052441
    Abstract: An extreme ultraviolet (EUV) mask comprises a substrate, a first reflective layer above a surface of the substrate, and a second reflective layer over the first reflective layer. The second reflective layer has various openings that define a first state and a second state. The first state includes the first reflective layer and is free of the second reflective layer. The second state includes both the first and second reflective layers. The first state has a first reflection coefficient and a first reflectivity. The second state has a second reflection coefficient and a second reflectivity. A phase difference between the first and second reflection coefficients is about 180 degrees.
    Type: Application
    Filed: November 7, 2016
    Publication date: February 23, 2017
    Inventors: YEN-CHENG LU, SHINN-SHENG YU, JENG-HORNG CHEN, ANTHONY YEN
  • Method and system for reducing pole imbalance by adjusting exposure intensity
    Patent number: 9575412
    Abstract: A method and system for adjusting exposure intensity to reduce unwanted lithographic effects is disclosed. In some exemplary embodiments, the method of photolithography includes receiving a mask and a workpiece. An orientation of an illumination pattern relative to the mask is determined, and an intensity profile of the illumination pattern is adjusted according to the orientation. The mask is exposed to radiation according to the illumination pattern and the intensity profile. Radiation resulting from the exposing of the mask is utilized to expose the workpiece. In some such embodiments, the intensity profile includes an intensity that varies across an illuminated region of the illumination pattern.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: February 21, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Method To Define Multiple Layer Patterns With A Single Exposure By Charged Particle Beam Lithography
    Publication number: 20170045827
    Abstract: The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer.
    Type: Application
    Filed: July 25, 2016
    Publication date: February 16, 2017
    Inventors: Yen-Cheng Lu, Chih-Tsung Shih, Jeng-Horng Chen, Shinn-Sheng Yu, Anthony Yen
  • Method of patterning a material layer
    Patent number: 9570302
    Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a radiation-removable-material (RRM) layer over a substrate and removing a first portion of the RRM layer in a first region of the substrate by exposing the first portion of the RRM layer to a radiation beam. A second portion of the RRM layer in a second region of the substrate remains after the removing of the first portion of the RRM layer in the first region. The method also includes forming a selective-forming-layer (SFL) over the second portion of the RRM layer in the second region of the substrate and forming a material layer over the first region of the substrate.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: February 14, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shu-Hao Chang, Kuo-Chang Kau, Kevin Huang, Jeng-Horng Chen
  • Assist feature for a photolithographic process
    Patent number: 9557649
    Abstract: A photolithographic technique includes receiving a mask having a printing feature region, a sub-resolution assist feature (SRAF) region, and a third region. Each region has a different thickness of an absorptive layer disposed therein. The technique also includes exposing the mask to radiation, such that an intensity of radiation reflected by the SRAF region is substantially between an intensity of radiation reflected by the printing feature region and an intensity of radiation reflected by the third region. Using the radiation reflected by the printing feature region, the radiation reflected by the SRAF region, and the radiation reflected by the third region a workpiece is exposed.
    Type: Grant
    Filed: March 14, 2016
    Date of Patent: January 31, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tao-Min Huang, Chia-Jen Chen, Hsin-Chang Lee, Chih-Tsung Shih, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • MASK WITH MULTILAYER STRUCTURE AND MANUFACTURING METHOD BY USING THE SAME
    Publication number: 20170017147
    Abstract: The present disclosure provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A multilayer (ML) structure is disposed over the substrate. The ML structure is configured to reflect radiation. The ML structure contains a plurality of interleaving film pairs. Each film pair includes a first film and a second film. The first film and the second film have different material compositions. Each film pair has a respective thickness. For at least a subset of the plurality of the film pairs, the respective thicknesses of the film pairs change randomly along a predefined direction.
    Type: Application
    Filed: July 17, 2015
    Publication date: January 19, 2017
    Inventors: Chih-Tsung Shih, Jeng-Horng Chen, Shinn-Sheng Yu, Anthony Yen
  • Extreme ultraviolet lithography process to print low pattern density features
    Patent number: 9535334
    Abstract: The present disclosure provides a method for extreme ultraviolet lithography (EUVL) process. The method includes loading a binary phase mask (BPM) to a lithography system, wherein the BPM includes two phase states and defines an integrated circuit (IC) pattern thereon; setting an illuminator of the lithography system in an illumination mode according to the IC pattern; configuring a pupil filter in the lithography system according to the illumination mode; and performing a lithography exposure process to a target with the BPM and the pupil filter by the lithography system in the illumination mode.
    Type: Grant
    Filed: May 28, 2014
    Date of Patent: January 3, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Photomask with three states for forming multiple layer patterns with a single exposure
    Patent number: 9535316
    Abstract: The present disclosure provides one embodiment of a mask for a lithography exposure process. The mask includes a mask substrate; a first mask material layer patterned to have a first plurality of openings that define a first layer pattern; and a second mask material layer patterned to have a second plurality of openings that define a second layer pattern.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: January 3, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Chih-Tsung Shih, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • EUV mask with ITO absorber to suppress out of band radiation
    Patent number: 9529250
    Abstract: The present disclosure also provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A reflective structure is disposed over the substrate. A capping layer is disposed over the reflective structure. An absorber layer is disposed over the capping layer. The absorber layer contains an indium tin oxide (ITO) material. In some embodiments, the ITO material has a SnO6 crystalline structure.
    Type: Grant
    Filed: October 31, 2014
    Date of Patent: December 27, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Ling Hsieh, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Extreme ultraviolet lithography process and mask
    Patent number: 9529272
    Abstract: A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. These different states of the EUV mask are assigned to adjacent polygons and adjacent assist polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence ? less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights reflected from main polygons and reflected lights from assist polygons are removed. The diffracted lights and the not removed non-diffracted lights reflected from main polygons are collected and directed to expose a target by a projection optics box.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: December 27, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Extreme ultraviolet lithography process and mask
    Patent number: 9529249
    Abstract: A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes a mask having reflective phase-shift-grating-blocks (PhSGBs). The system also includes an illumination to expose the mask to produce a resultant reflected light from the mask. The resultant reflected light contains mainly diffracted lights. The system also has projection optics to collect and direct resultant reflected light to expose a target.
    Type: Grant
    Filed: July 15, 2014
    Date of Patent: December 27, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Tsung Shih, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • ROTARY EUV COLLECTOR
    Publication number: 20160370705
    Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.
    Type: Application
    Filed: August 29, 2016
    Publication date: December 22, 2016
    Inventors: Shang-Chieh Chien, Shu-Hao Chang, Jui-Ching Wu, Tsung-Yu Chen, Tzu-Hsiang Chen, Ming-Chin Chien, Chia-Chen Chen, Jeng-Horng Chen