Patents by Inventor Jeng-Horng Chen

Jeng-Horng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF MAKING AN EXTREME ULTRAVIOLET PELLICLE
    Publication number: 20160363857
    Abstract: The present disclosure relates to an extreme ultraviolet (EUV) pellicle having a pellicle film connected to a pellicle frame. In some embodiments, the EUV pellicle has a substrate, and an adhesive material disposed onto the substrate. A pellicle frame is connected to the substrate by way of the adhesive material. The pellicle frame is configured to mount the substrate to an extreme ultraviolet (EUV) reticle.
    Type: Application
    Filed: August 24, 2016
    Publication date: December 15, 2016
    Inventors: Chih-Tsung Shih, Tien-Hsi Lee, Chia-Jen Chen, Shang-Chieh Chien, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Via Definition Scheme
    Publication number: 20160329240
    Abstract: A method includes defining a metal pattern layer over a first dielectric layer. The first dielectric layer is disposed over an etch stop layer and the etch stop layer is disposed over a second dielectric layer. A spacer layer is grown over the metal pattern layer and the first dielectric layer. A metal trench is formed with a metal width in the first dielectric layer. A via hole is formed with a via width in the second dielectric layer.
    Type: Application
    Filed: July 22, 2016
    Publication date: November 10, 2016
    Inventors: Yen-Cheng Lu, Chih-Tsung Shih, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Extreme ultraviolet lithography process and mask with reduced shadow effect and enhanced intensity
    Patent number: 9488905
    Abstract: A method of forming a mask for semiconductor fabrication is disclosed. The method includes providing a substrate and forming a first reflective layer over the substrate, wherein the first reflective layer comprises pairs of alternating materials. The method further includes forming a buffer layer over the first reflective layer and forming a second reflective layer over the buffer layer. The second reflective layer has a total thickness less than 90 nanometer (nm). The method further includes patterning the second reflective layer to form a first state and a second state of the mask. A first reflection coefficient of the first state and a second reflection coefficient of the second state have a phase difference of about 180 degrees.
    Type: Grant
    Filed: February 15, 2016
    Date of Patent: November 8, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Extreme Ultraviolet Lithography Collector Contamination Reduction
    Publication number: 20160320708
    Abstract: An extreme ultraviolet (EUV) radiation source module includes a target droplet generator, a first laser source, and a second laser source. The target droplet generator is configured to generate a plurality of target droplets. The first laser source is configured to generate a plurality of first laser pulses that heat the target droplets at respective excitation positions thereby generating a plurality of target plumes. At least one of the target droplets is heated at an excitation position different from that of other target droplets. The second laser source is configured to generate a plurality of second laser pulses that heat the target plumes thereby generating plasma emitting EUV radiation.
    Type: Application
    Filed: July 20, 2015
    Publication date: November 3, 2016
    Inventors: YEN-CHENG LU, JENG-HORNG CHEN, SHUN-DER WU, TZU-HSIANG CHEN
  • EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK
    Publication number: 20160306272
    Abstract: An extreme ultraviolet lithography (EUVL) system is disclosed. The system includes an extreme ultraviolet (EUV) mask with three states having respective reflection coefficient is r1, r2 and r3, wherein r3 is a pre-specified value that is a function of r1 and r2. The system also includes a nearly on-axis illumination (ONI) with partial coherence a less than 0.3 to expose the EUV mask to produce diffracted light and non-diffracted light. The system further includes a projection optics box (PUB) to remove a portion of the non-diffracted light and to collect and direct the diffracted light and the remaining non-diffracted light to expose a target.
    Type: Application
    Filed: June 27, 2016
    Publication date: October 20, 2016
    Inventors: Yen-Cheng Lu, Jeng-Horng Chen, Shinn-Sheng Yu, Anthony Yen
  • EUV focus monitoring systems and methods
    Publication number: 20160291482
    Abstract: Systems and methods for monitoring the focus of an EUV lithography system are disclosed. Another aspect includes a method having operations of measuring a first shift value for a first patterned set of sub-structures of a focus test structure on a wafer and measuring a second shift value for a second patterned set of sub-structures of the test structure on the wafer. The test structure may be formed on the wafer using asymmetric illumination, with the first patterned set of sub-structures having a first pitch and the second patterned set of sub-structures having a second pitch that is different from the first pitch. The method may further include determining a focus shift compensation for an illumination system based on a difference between the first shift value and the second shift value.
    Type: Application
    Filed: September 14, 2015
    Publication date: October 6, 2016
    Inventors: Chih-Tsung Shih, Chieh-Jen Cheng, Jeng-Horng Chen, Chia-Chen Chen, Shinn-Sheng Yu, Anthony Yen, Wei-Chih Lai
  • EUV Lithography System and Method with Optimized Throughput and Stability
    Publication number: 20160274465
    Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography process. The process includes loading a wafer to an EUV lithography system having an EUV source; determining a dose margin according to an exposure dosage and a plasma condition of the EUV source; and performing a lithography exposing process to the wafer by EUV light from the EUV source, using the exposure dosage and the dose margin.
    Type: Application
    Filed: May 20, 2015
    Publication date: September 22, 2016
    Inventors: YEN-CHENG LU, JENG-HORNG CHEN, SHUN-DER WU, ANTHONY YEN
  • Extreme ultraviolet lithography process and mask
    Patent number: 9448491
    Abstract: A system of an extreme ultraviolet lithography (EUVL) is disclosed. an extreme ultraviolet lithography (EUVL) system includes an extreme ultraviolet (EUV) reflection-type mask having a patterned flare-suppressing-by-phase-shifting (FSbPhS) layer disposed over a patterned absorption layer. The system also includes a radiation to expose the EUV mask and a projection optics box (POB) to collect and direct the radiation that reflects from the EUV mask to expose a target.
    Type: Grant
    Filed: September 20, 2013
    Date of Patent: September 20, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Method of making an extreme ultraviolet pellicle
    Patent number: 9442368
    Abstract: The present disclosure relates to a method of forming an extreme ultraviolet (EUV) pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate. A pellicle frame is attached to an upper surface of the substrate, and the substrate is cleaved along the cleaving plane to form a pellicle film attached to the pellicle frame. The method forms the pellicle without using a support structure, which may block EUV radiation and cause substantial non-uniformities in the intensity of EUV radiation incident on an EUV reticle.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: September 13, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Tsung Shih, Tien-Hsi Lee, Chia-Jen Chen, Shang-Chieh Chien, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Mask for extreme ultraviolet lithography and method of fabricating same
    Patent number: 9442365
    Abstract: A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate and a patterned absorption layer disposed over the reflective multilayer. The patterned absorption layer has a mask image region and a mask border region. The exemplary mask also includes a mask border frame disposed over the mask border region. The mask border frame has a top surface and a bottom surface. The top surface is not parallel to the bottom surface.
    Type: Grant
    Filed: March 13, 2014
    Date of Patent: September 13, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Extreme ultraviolet lithography process and mask
    Patent number: 9442384
    Abstract: The present disclosure is directed towards lithography processes. In one embodiment, a patterned mask is provided. An information of a position of diffraction light (PDL) on a pupil plane of a projection optics box (POB) is used to define as a light-transmitting region of a pupil filter. The patterned mask is exposed by an on-axis illumination (ONI) with partial coherence ? less than 0.3. The pupil filter is used to transmit diffraction light to a target.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: September 13, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Rotary EUV collector
    Patent number: 9429858
    Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: August 30, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shang-Chieh Chien, Shu-Hao Chang, Jui-Ching Wu, Tsung-Yu Chen, Tzu-Hsiang Chen, Ming-Chin Chien, Chia-Chen Chen, Jeng-Horng Chen
  • Method for integrated circuit patterning
    Patent number: 9418862
    Abstract: A method includes forming a resist over a substrate, resulting in a layer of resist scum between the resist and the substrate. The method further includes forming trenches in the resist, wherein at least a portion of the layer of resist scum remains between the trenches and the substrate. The method further includes forming a first material layer in the trenches, wherein the first material layer has a higher etch resistance than the resist in an etching process. The method further includes performing the etching process to the first material layer, the resist, and the layer of resist scum, thereby forming a patterned first material layer over a patterned layer of resist scum over the substrate.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: August 16, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tsung-Min Huang, Chieh-Han Wu, Chung-Ju Lee, Chih-Tsung Shih, Jeng-Horng Chen, Shinn-Sheng Yu
  • Providing electron beam proximity effect correction by simulating write operations of polygonal shapes
    Patent number: 9418191
    Abstract: A method for writing a design to a material using an electron beam includes assigning a first dosage to a first polygonal shape. The first polygonal shape occupies a first virtual layer and includes a first set of pixels. The method also includes simulating a first write operation using the first polygonal shape to create the design, discerning an error in the simulated first write operation, and assigning a second dosage to a second polygonal shape to reduce the error. The second polygonal shape occupies a second virtual layer. The method further includes creating a data structure that includes the first and second polygonal shapes and saving the data structure to a non-transitory computer-readable medium.
    Type: Grant
    Filed: May 2, 2013
    Date of Patent: August 16, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hung-Chun Wang, Jeng-Horng Chen, Shy-Jay Lin, Chia-Ping Chiang, Cheng Kun Tsai, Wen-Chun Huang, Ru-Gun Liu
  • EUV PELLICLE FABRICATION METHODS AND STRUCTURES THEREOF
    Publication number: 20160231647
    Abstract: A method for fabricating a pellicle for EUV lithography processes includes placing a hard mask in contact with a surface of a substrate. In some embodiments, the hard mask is configured to pattern the surface of the substrate to include a first region and a second region surrounding the first region. By way of example, while the mask in positioned in contact with the substrate, an etch process of the substrate is performed to etch the first and second regions into the substrate. Thereafter, an excess substrate region is removed so as to separate the etched first region from the excess substrate region. In various embodiments, the etched and separated first region serves as a pellicle for an extreme ultraviolet (EUV) lithography process.
    Type: Application
    Filed: February 5, 2015
    Publication date: August 11, 2016
    Inventors: Pei-Cheng Hsu, Chih-Tsung Shih, Jeng-Horng Chen, Chih-Cheng Lin, Hsin-Chang Lee, Shinn-Sheng Yu, Ta-Cheng Lien, Anthony Yen
  • Via definition scheme
    Patent number: 9412647
    Abstract: A method includes defining a metal pattern layer over a first dielectric layer. The first dielectric layer is disposed over an etch stop layer and the etch stop layer is disposed over a second dielectric layer. A spacer layer is grown over the metal pattern layer and the first dielectric layer. A metal trench is formed with a metal width in the first dielectric layer. A via hole is formed with a via width in the second dielectric layer.
    Type: Grant
    Filed: September 11, 2013
    Date of Patent: August 9, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Chih-Tsung Shih, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • System And Method For Photomask Particle Detection
    Publication number: 20160225610
    Abstract: The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.
    Type: Application
    Filed: January 30, 2015
    Publication date: August 4, 2016
    Inventors: Shang-Chieh Chien, Shu-Hao Chang, Hsiang-Yu Chou, Kuo-Chang Kau, Shun-Der Wu, Chia-Chen Chen, Jeng-Horng Chen
  • Extreme Ultraviolet Lithography Process and Mask
    Publication number: 20160223899
    Abstract: A mask for extreme ultraviolet lithography (EUVL) is disclosed. The mask includes a low thermal expansion material (LTEM) layer; and a reflective multilayer (ML) above one surface of the LTEM layer, wherein the reflective ML has a first thickness in a first reflective region and a second thickness in a second reflective region, wherein the second thickness is different from the first thickness.
    Type: Application
    Filed: April 7, 2016
    Publication date: August 4, 2016
    Inventors: CHIH-TSUNG SHIH, SHINN-SHENG YU, JENG-HORNG CHEN, ANTHONY YEN
  • Method to define multiple layer patterns with a single exposure by charged particle beam lithography
    Patent number: 9405195
    Abstract: The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer and a second latent feature in the second patternable material layer.
    Type: Grant
    Filed: June 23, 2015
    Date of Patent: August 2, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Chih-Tsung Shih, Jeng-Horng Chen, Shinn-Sheng Yu, Anthony Yen
  • Assist Feature for a Photolithographic Process
    Publication number: 20160195812
    Abstract: A photolithographic technique includes receiving a mask having a printing feature region, a sub-resolution assist feature (SRAF) region, and a third region. Each region has a different thickness of an absorptive layer disposed therein. The technique also includes exposing the mask to radiation, such that an intensity of radiation reflected by the SRAF region is substantially between an intensity of radiation reflected by the printing feature region and an intensity of radiation reflected by the third region. Using the radiation reflected by the printing feature region, the radiation reflected by the SRAF region, and the radiation reflected by the third region a workpiece is exposed.
    Type: Application
    Filed: March 14, 2016
    Publication date: July 7, 2016
    Inventors: TAO-MIN HUANG, CHIA-JEN CHEN, HSIN-CHANG LEE, CHIH-TSUNG SHIH, SHINN-SHENG YU, JENG-HORNG CHEN, ANTHONY YEN