Abstract: A liquid crystal display (LCD) panel, a display apparatus and a method for driving the display apparatus capable of providing a LCD panel having good display quality are provided. The liquid crystal display panel comprises: a first substrate (11) and a second substrate (21) opposite to each other, a pixel array provided on the first substrate (11), and a liquid crystal layer (3) between the first substrate (11) and the second substrate (21). The liquid crystal display panel further comprising a first common electrode (12) disposed on a side of the first substrate (11) close to the liquid crystal layer (3) and a second common electrode (22) disposed on a side of the second substrate (21) close to the liquid crystal layer (3). A first pixel electrode (1) and a second pixel electrode (2) are disposed on the first substrate (11). The second common electrode (22) has no overlap region directly facing the first pixel electrode (1) and/or the second pixel electrode (2).

Abstract: A thin film transistor comprises a substrate; a gate electrode, a source electrode, a drain electrode and a semiconductor layer formed on the substrate; a gate insulating layer between the gate electrode and the semiconductor layer or between the gate electrode and the source and drain electrodes; an etching stop layer between the semiconductor layer and the source and drain electrodes having a source contact hole and a drain contact hole therein; and a source buffer layer between the source electrode and the semiconductor layer and a drain buffer layer between the drain electrode and the semiconductor layer. The source and drain electrodes are metal Cu electrodes, and the source and drain buffer layers are Cu alloy layer.

Abstract: A manufacturing method of a TFT array substrate is provided. The method includes the following steps: respectively forming a metal oxide semiconductor layer, an etching barrier layer, a source electrode, a data line, a drain electrode, a pixel electrode, a gate insulating layer, a contact hole, a gate electrode and a gate scanning line on a substrate by patterning processes, wherein the metal oxide semiconductor layer and the etching barrier layer are formed by a same patterning process, and the source electrode, the drain electrode, the pixel electrode and the data line are formed by another same patterning process.

Abstract: An array substrate and a method for fabricating the same are disclosed. The method for fabricating the array substrate comprises: forming a pattern of a gate electrode (2) and a common electrode (3) on a substrate (1); forming a pattern of a gate insulating layer (4), an active layer (5), a source/drain electrode layer (6) and a first passivation layer (7), wherein the first passivation layer (7) has a via hole and a thin film transistor (TFT) channel window, and the TFT channel window is located above the gate electrode (2); forming a TFT channel and a pixel electrode (9) with slits, wherein the pixel electrode (9) is connected to one of the source/drain electrode (6) through the via hole. The method is not only simple and stable but also improves the TFT quality.

Abstract: Embodiments of disclosed technology provide a color filter substrate and a liquid crystal display having the same. The color filter substrate comprises: a base substrate; a plurality of pixels on the base substrate, each of which comprises first filter blocks and colorful filter blocks; and a black matrix disposed on the base substrate for isolating the filter blocks. In each of the pixels, each of the colorful filter blocks is disposed adjoining at least one first filter block to form a sub-pixel.

Abstract: The present invention provides an array substrate and a method for manufacturing the same, and a display device. In the method for manufacturing the array substrate, a one-time patterning process is employed to form a channel region, a source electrode and a drain electrode of the array substrate. Specifically, a channel region, a source region and a drain region that are consisted of a metal oxide layer are formed via a one-time patterning process, and a heat treatment is carried out on the metal oxide layer of the source region and the drain region in hydrogen gas, thereby forming a conducting source electrode and a conducting drain electrode, respectively. By the technical solution of the invention, the manufacturing process of the array substrate can be simplified, and the manufacturing cost of the array substrate can be lowered.

Abstract: The present invention discloses a fluorine-modified epoxy acrylic resin, an UV-curable varnish and a method for preparing the same, and a method for coating the varnish on a substrate. The fluorine-modified epoxy acrylic resin is prepared by a process including the following steps: generating an epoxy acrylic resin via a ring-opening esterification reaction between an unsaturated mono-carboxylic acid and at least one epoxy group in an epoxy resin; and generating an epoxy acrylic resin containing fluorinated side groups via an esterification reaction between a fluorocarboxylic acid or a fluorocarboxylic acid anhydride and at least one hydroxy group in the epoxy acrylic resin. The UV-curable varnish according to the invention is prepared based on the fluorine-modified epoxy acrylic resin. When the varnish is applied to the surface of a substrate, at least one performance of the material, thereby the service life of the material itself may be improved.

Abstract: Embodiments of the present invention provide a thin film transistor (TFT) array substrate and a method for manufacturing the same and a display device. The TFT array substrate improves a structure of a TFT array substrate and has a small thickness, and process flow is simplified. The method for manufacturing a thin film transistor (TFT) array substrate comprises: obtaining a gate line and a gate electrode through a first patterning process on a glass substrate; forming a gate insulating layer on the gate line and the gate electrode; forming a graphene layer on the gate insulating layer, and obtaining a semiconductor active layer over the gate electrode by a second patterning process and a hydrogenation treatment; obtaining a data line, a source electrode, a drain electrode and a pixel electrode which are located on the same layer by a third patterning process; and forming a protection layer on the data line, the source electrode, the semiconductor active layer, the drain electrode and the pixel electrode.

Abstract: The invention is related to a method of preparing a conducting film on an ultra-thin glass substrate. The preparing method uses magnetron sputtering, setting an initial magnetron sputtering power and/or an initial flow rate of argon to deposit the conducting film, detecting film layer stress of the conducting film by a pressure sensor on provided on the ultra-thin glass substrate, and adjusting a magnetron sputtering power and/or a flow rate of argon gas in real time according to the detected film layer stress, such that an absolute value of the film layer stress is kept below a predetermined value; the ultra-thin glass substrate has a thickness less than 0.1 mm.

Abstract: There is disclosed an array substrate which has a base substrate and data lines and gate lines on the base substrate, The data lines and gate lines intersect with each other to define pixel units, and each pixel unit comprises a pixel electrode, a gate electrode, a source electrode, a drain electrode and an active layer, and the pixel electrode, the gate electrode and the gate line adjoin to the base substrate, and the gate electrode is formed of a same material as that for forming the pixel electrode.

Abstract: A UV cured varnish, and a process for preparing the same, said UV cured varnish including an epoxy acrylic resin, a polyurethane acrylic resin, a polymerizable monomer, a filler, a photoinitiator, and an adjuvant, wherein the polymerizable monomer comprises a fluorine containing polymerizable monomer and a silicon containing polymerizable monomer. The UV cured varnish can significantly improve the film forming performance. The formed film has a significantly improved performance including hardness, perspiration resistance. The UV cured varnish thus obtained is especially suitable for touch screen and can greatly extend the life of the touch screen.

Abstract: The disclosure provides an inkjet ink for color filter and a method for preparing the same, as well as a method for preparing of a color filter. The inkjet ink for color filter comprising, by weight, 10 to 50 parts of aqueous nano pigment dispersion and 51 to 95 parts of a cold curing component.

Abstract: Embodiments of the disclosed technology provide an electronic ink microcapsule and a method for producing the same, wherein the electronic ink microcapsule comprises gelatin, polyanion, and an electrophoretic suspension, and the polyanion comprises a hydrolyzate of styrene-maleic anhydride-hexafluorobutyl (meth)acrylate-vinyl triethoxysilane tetracopolymer.

Abstract: A thin film transistor and method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor comprises a substrate; a gate electrode, a source electrode, a drain electrode and a semiconductor layer formed on the substrate; a gate insulating layer between the gate electrode and the semiconductor layer or between the gate electrode and the source and drain electrodes; an etching stop layer between the semiconductor layer and the source and drain electrodes having a source contact hole and a drain contact hole therein; and a source buffer layer between the source electrode and the semiconductor layer and a drain buffer layer between the drain electrode and the semiconductor layer. The source and drain electrodes are metal Cu electrodes, and the source and drain buffer layers are Cu alloy layer.

Abstract: An array substrate comprises a first substrate and a plurality of gate lines and a plurality of the data lines provided on the first substrate, the plurality of gate lines and the plurality of the data lines define a plurality of pixel units arranged into a matrix form. Each of the plurality of pixel units comprising: a first electrode having slits, comprising two or more regions where the slits have the different tilt degrees; a second electrode; and a thin film transistor switch, wherein the first electrode and the second electrode are used to form a horizontal electric field for driving liquid crystal molecules, the gate line and the thin film transistor switch are arranged between each two regions of the first electrode, and the thin film transistor switch is controlled by the gate line to operate each region of the first electrode.

Abstract: The disclosure provides an ink jet ink for color filter and a method for preparing the same, as well as a method for preparing of a color filter. The ink jet ink for color filter comprising, by weight, 10 to 50 parts of aqueous nano pigment dispersion and 51 to 95 parts of a cold curing component.

Abstract: The invention discloses a deep-ultraviolet chemically-amplified positive photoresist. The deep-ultraviolet chemically-amplified positive photoresist according to one embodiment of the invention includes a cyclopentenyl pimaric acid, a divinyl ether, a photoacid generator and an organic solvent. The deep-ultraviolet chemically-amplified positive photoresist according to the invention has a good sensitivity and a good transparency.

Abstract: An embodiment of the invention discloses an alkaline soluble resin and a method for preparing the same. The chemical formula of this alkaline soluble resin is shown in Formula I: wherein a is an integer of 1 to 5, b is an integer of 1 to 5, c is an integer of 1 to 10, d is an integer of 1 to 10, m is an integer of 1 to 30, n is an integer of 1 to 10, R is hydrogen, alkyl, alkoxy or acrylate; the alkaline soluble resin has a weight-average molecular weight of 3,500-35,000. The invention also discloses a light sensible resin composition comprising the alkaline soluble resin, as well as a colored photoresist for color filters comprising the aforementioned light sensible resin composition and a display element comprising this colored photoresist.

Abstract: An embodiment of the disclosed technology provides a mask plate for photolithography process comprising a first pattern region, a second pattern region having a different exposure level from that of the first pattern region, and a redundant pattern provided between the first pattern region and the second pattern region, wherein the redundant pattern is configured for forming a redundant photoresist pattern so as to prevent developer diffusion at different concentrations across the photoresist redundant pattern.

Abstract: Embodiments of the present invention disclose a thin film transistor array substrate and a method for manufacturing the same and an electronic device.