Abstract: Embodiments of the disclosed technology disclose a photolithography method and apparatus, and the method comprises: hydrophobicity-treating edge portions of a surface of a substrate to be applied with photoresist; and applying hydrophilic photoresist to the surface of the substrate subject to hydrophobic treatment. With the disclosed technology, the usage amount of thinner in the edge photoresist-removing procedure can be greatly reduced or even eliminated, thereby reducing production costs and increasing production efficiency.

Abstract: Embodiments of the disclosed technology disclose a method for fixing glass substrates and a method for preparing a flexible display device. The method for fixing glass substrates comprises coating an edge portion of a first glass substrate corresponding to a second glass substrate with epoxy resin and screeding the coated epoxy resin layer, adhering the second glass substrate to the first glass substrate, and annealing the two glass substrates. With the technical solution of this disclosed technology, the time period for fixing the adhered glass substrates can be reduced with an improved productivity.

Abstract: An embodiment of the disclosed technology provides a mask plate for photolithography process comprising a first pattern region, a second pattern region having a different exposure level from that of the first pattern region, and a redundant pattern provided between the first pattern region and the second pattern region, wherein the redundant pattern is configured for forming a redundant photoresist pattern so as to prevent developer diffusion at different concentrations across the photoresist redundant pattern.

Abstract: There is disclosed an array substrate which has a base substrate and data lines and gate lines on the base substrate, The data lines and gate lines intersect with each other to define pixel units, and each pixel unit comprises a pixel electrode, a gate electrode, a source electrode, a drain electrode and an active layer, and the pixel electrode, the gate electrode and the gate line adjoin to the base substrate, and the gate electrode is formed of a same material as that for forming the pixel electrode.

Abstract: An array substrate comprises a first substrate and a plurality of gate lines and a plurality of the data lines provided on the first substrate, the plurality of gate lines and the plurality of the data lines define a plurality of pixel units arranged into a matrix form. Each of the plurality of pixel units comprising: a first electrode having slits, comprising two or more regions where the slits have the different tilt degrees; a second electrode; and a thin film transistor switch, wherein the first electrode and the second electrode are used to form a horizontal electric field for driving liquid crystal molecules, the gate line and the thin film transistor switch are arranged between each two regions of the first electrode, and the thin film transistor switch is controlled by the gate line to operate each region of the first electrode.

Abstract: The present invention provides an array substrate, comprising: a base substrate; a pixel electrode pattern and a gate pattern formed on the base substrate, the gate pattern comprises a gate scanning line and a gate electrode of a transistor, both of the gate scanning line and the gate electrode comprise transparent conductive metal layer and the gate metal layer stacking on the substrate, each pixel electrode in the pixel electrode pattern comprises transparent conductive metal layer; a gate insulating layer on the pixel electrode pattern and the gate pattern, an active layer pattern on the gate insulating layer and corresponding to the gate electrode, a via hole in the gate insulating layer for exposing the pixel electrode; and a source/drain pattern on the gate insulating layer, the source/drain pattern comprises a data scanning line crossing with the gate scanning line, source and drain electrodes of the transistor, and the drain electrode is in contact with the pixel electrode through the via hole.

Abstract: An array substrate comprises: a base substrate; a gate scanning line, a data scanning line, a pixel electrode and a thin film transistor, formed on the base substrate; and a light blocking layer, formed on the base substrate and corresponding to the thin film transistor and the data scanning line.

Abstract: A thin film transistor comprising a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes is provided. The gate electrode overlaps with a channel region of the active layer, the gate insulating layer is provided between the gate electrode and the active layer, the source and drain electrodes overlap a source region and a drain region of the active layer, respectively, and a thin film of SiNx or SiOxNy through which electrons are allowed to tunnel is provided between the active layer and the source and drain electrodes.

Abstract: An array substrate comprising a base substrate, a common electrode, a gate line, a data line, a thin film transistor, a passivation layer and a pixel electrode of “” shape. The thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode; the gate electrode is connected with the gate line; the source electrode is connected with the data line; and the drain electrode is connected with the pixel electrode. A passivation layer is formed on the source electrode, the drain electrode and the data line, and a via hole is formed in the passivation layer over the drain electrode. The pixel electrode of “” shape is formed on the passivation layer and connected with the drain electrode through the via hole in the passivation layer. The data line is provided below the position corresponding to the boundary between the “/” portion and the “\” portion of the pixel electrode of “” shape. The array substrate increases the transmittivity of pixel and improves the display quality.

Abstract: An array substrate comprising a base substrate, a common electrode, a gate line, a data line, a thin film transistor, a passivation layer and a pixel electrode of “” shape. The thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode; the gate electrode is connected with the gate line; the source electrode is connected with the data line; and the drain electrode is connected with the pixel electrode. A passivation layer is formed on the source electrode, the drain electrode and the data line, and a via hole is formed in the passivation layer over the drain electrode. The pixel electrode of “” shape is formed on the passivation layer and connected with the drain electrode through the via hole in the passivation layer. The data line is provided below the position corresponding to the boundary between the “/” portion and the “\” portion of the pixel electrode of “” shape. The array substrate increases the transmittivity of pixel and improves the display quality.

Abstract: A thin film transistor comprising a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes is provided. The gate electrode overlaps with a channel region of the active layer, the gate insulating layer is provided between the gate electrode and the active layer, the source and drain electrodes overlap a source region and a drain region of the active layer, respectively, and a thin film of SiNx or SiOxNy through which electrons are allowed to tunnel is provided between the active layer and the source and drain electrodes.

Abstract: Provided are a target material for manufacturing an electrode film of a semiconductor device, methods of manufacturing the target material and manufacturing the electrode film. The target material comprises Al-RE alloy or Al—Ni-RE alloy, in which RE is a mixture of rare earth elements comprising La, Ce, Pr, and Nd.