Patents by Inventor Jin-hong Park

Jin-hong Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170243998
    Abstract: In case of forming electrodes for electronic device using a two-dimensional semiconductor, a two-dimensional semiconductor layer doped into n-type or p-type is formed on a substrate, a first area and a second area of the doped two-dimensional semiconductor layer is patterned into a predetermined pattern shape, and a first electrode and a second electrode are formed on the patterned first and second areas, respectively.
    Type: Application
    Filed: February 21, 2017
    Publication date: August 24, 2017
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Jin Hong PARK, Hyung Youl PARK, Jeong Hoon KIM, Woo Young CHOI
  • Publication number: 20170153547
    Abstract: In a preferred aspect, organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more glycidyl groups; and 2) one or more aromatic groups that each comprises two or more substituents that comprise hydroxy, thiol and/or amine moieties. Catechol-containing polymers and methods for producing same also are provided.
    Type: Application
    Filed: November 29, 2016
    Publication date: June 1, 2017
    Inventors: Jae Hwan Sim, Jung Kyu Jo, EunHye Cho, Hye-Won Lee, Jin Hong Park, Eui-Hyun Ryu, Jae-Bong Lim
  • Publication number: 20170123319
    Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that in a first aspect comprise a crosslinker component that comprises a structure of the following Formula (I):
    Type: Application
    Filed: October 28, 2016
    Publication date: May 4, 2017
    Inventors: Eui-Hyun Ryu, Jin Hong Park, You Rim Shin, Ji-Hon Kang, Jung-June Lee, Jae-Bong Lim
  • Publication number: 20170125263
    Abstract: The present disclosure relates to a method of doping a 2-dimensional semiconductor. The method of doping a 2-dimensional semiconductor includes: forming an insulating layer including photosensitive particles on a substrate; moving the photosensitive particles included in the insulating layer to a surface of the insulating layer through a heat treatment; forming a 2-dimensional semiconductor layer on the insulating layer; and doping a 2-dimensional semiconductor material included in the 2-dimensional semiconductor layer by exposing the 2-dimensional semiconductor material to a light corresponding to an absorption wavelength of the photosensitive particles included in the insulating layer.
    Type: Application
    Filed: October 31, 2016
    Publication date: May 4, 2017
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Jin Hong PARK, Hyung Youl PARK
  • Patent number: 9632437
    Abstract: Provided are a lithography apparatus, a method for lithography and a stage system. The lithography apparatus includes a reticle stage having a reticle, at least one nozzle on at least one surface of the reticle stage and configured to allow shielding gas to flow to a surface of the reticle to form an air curtain, and a gas supply unit configured to supply the nozzle with the shielding gas.
    Type: Grant
    Filed: July 16, 2013
    Date of Patent: April 25, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-Hong Park, Jeong-Ho Yeo, Joo-On Park, Chang-Min Park
  • Patent number: 9628595
    Abstract: A second microphone device of a mobile terminal, and more particularly, a second microphone device of a mobile terminal for preventing various limitations caused by mounting of a second microphone, is provided. The second microphone device includes an ear jack connector having an insertion space, a microphone hole connected at one end to the insertion space, and a second microphone connected at the other end of the microphone hole, thereby improving ambient noise removal performance of the mobile terminal without adversely affecting its appearance.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: April 18, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Jae Ko, Min Seok Kim, Jin Hong Park
  • Publication number: 20170068157
    Abstract: A pellicle for a reflective mask including a pellicle body, a light shielding pattern, a grating pattern, and a pellicle frame. The pellicle body includes a central region and a peripheral region, wherein the peripheral region surrounds the central region. The light shielding pattern is formed on the peripheral region of the pellicle body; the grating pattern is formed on the light shielding pattern, and the pellicle frame is located under the peripheral region of the pellicle body, and the pellicle frame is configured to support the pellicle body.
    Type: Application
    Filed: June 16, 2016
    Publication date: March 9, 2017
    Applicant: Samsung Electronics Co. , Ltd.
    Inventors: Chang-min PARK, Jin-hong PARK, Myung-soo HWANG
  • Patent number: 9570684
    Abstract: Example embodiments relate to methods of doping a 2-dimensional semiconductor. The method includes forming a semiconductor layer on a substrate, implanting ions into the semiconductor layer, forming a doped layer formed of a 2-dimensional semiconductor layer or an organic semiconductor layer on the semiconductor layer, and doping the doped layer by diffusing the ions of the semiconductor layer into the doped layer through annealing the substrate.
    Type: Grant
    Filed: July 24, 2014
    Date of Patent: February 14, 2017
    Assignees: Samsung Electronics Co., Ltd., Research & Business Foundation Sungkyunkwan University
    Inventors: Jin-hong Park, Hyung-youl Park, Jae-woo Shim, Jae-ho Lee
  • Patent number: 9558987
    Abstract: Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and Ar1 is an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: R3 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and R4 is chosen from optionally substituted C1 to C12 linear, branched or cyclic alkyl, and optionally substituted C6 to C15 aryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: January 31, 2017
    Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLC, Rohm and Haas Electronic Materials Korea Ltd.
    Inventors: Jae Hwan Sim, Jin Hong Park, Jae-Bong Lim, Jung Kyu Jo, Cheng-Bai Xu, Jong Keun Park, Mingqi Li, Phillip D. Hustad
  • Patent number: 9544985
    Abstract: Provided is an apparatus for generating extreme ultraviolet light. The apparatus includes a collector mirror unit, a gas supply unit configured to supply a processing gas to the collector mirror unit, a gas supply nozzle arranged in at least one area of the collector mirror unit and configured to supply the processing gas to a surface of the collector mirror unit, and a controller configured to adjust a shape of a spray hole of the gas supply nozzle. The shape of the spray hole may be changed according to a control operation of the controller.
    Type: Grant
    Filed: July 20, 2015
    Date of Patent: January 10, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-Seok Heo, Jin-Hong Park
  • Publication number: 20160143121
    Abstract: An extreme ultraviolet (EUV) light source device includes a source droplet generator for generating source droplets as a target source for generating extreme ultraviolet (EUV) light and for injecting the source droplets to a collector, a light irradiator for directing a detection light to an injection path of the source droplets, a light detector for detecting the detection light blocked by the source droplet, and a source droplet controller electrically connected to the light detector and the source droplet generator for analyzing the detection light to determine whether a satellite of the source droplet is generated or to determine a size of the generated satellite and for controlling a formation of a stream of source droplets based on the determination result.
    Type: Application
    Filed: August 4, 2015
    Publication date: May 19, 2016
    Inventors: Seung-Koo Lee, In-Sung Kim, Jin-Hong Park
  • Publication number: 20160143122
    Abstract: Provided is an apparatus for generating extreme ultraviolet light. The apparatus includes a collector mirror unit, a gas supply unit configured to supply a processing gas to the collector mirror unit, a gas supply nozzle arranged in at least one area of the collector mirror unit and configured to supply the processing gas to a surface of the collector mirror unit, and a controller configured to adjust a shape of a spray hole of the gas supply nozzle. The shape of the spray hole may be changed according to a control operation of the controller.
    Type: Application
    Filed: July 20, 2015
    Publication date: May 19, 2016
    Inventors: Jin-Seok Heo, Jin-Hong Park
  • Patent number: 9318556
    Abstract: Provided are graphene transistors having a tunable barrier. The graphene transistor includes a semiconductor substrate, an insulating thin film disposed on the semiconductor substrate, a graphene layer on the insulating thin film, a first electrode connected to an end of the graphene layer, a second electrode that is separate from an other end of the graphene layer and contacts the semiconductor substrate, a gate insulating layer covering the graphene layer, and a gate electrode on the gate insulating layer, wherein an energy barrier is formed between the semiconductor substrate and the graphene layer.
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: April 19, 2016
    Assignees: Samsung Electronics Co., Ltd., Research & Business Foundation Sungkyunkwan University
    Inventors: Jin-hong Park, Jae-woo Shim, Hyung-youl Park, Jae-ho Lee
  • Publication number: 20150348828
    Abstract: Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and Ar1 is an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: R3 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and R4 is chosen from optionally substituted C1 to C12 linear, branched or cyclic alkyl, and optionally substituted C6 to C15 aryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group i
    Type: Application
    Filed: December 23, 2014
    Publication date: December 3, 2015
    Inventors: Jae Hwan SIM, Jin Hong PARK, Jae-Bong LIM, Jung Kyu JO, Cheng-Bai XU, Jong Keun PARK, Mingqi LI, Phillip D. HUSTAD
  • Publication number: 20150244845
    Abstract: A second microphone device of a mobile terminal, and more particularly, a second microphone device of a mobile terminal for preventing various limitations caused by mounting of a second microphone, is provided. The second microphone device includes an ear jack connector having an insertion space, a microphone hole connected at one end to the insertion space, and a second microphone connected at the other end of the microphone hole, thereby improving ambient noise removal performance of the mobile terminal without adversely affecting its appearance.
    Type: Application
    Filed: May 8, 2015
    Publication date: August 27, 2015
    Inventors: Young Jae KO, Min Seok KIM, Jin Hong PARK
  • Publication number: 20150214482
    Abstract: Example embodiments relate to methods of doping a 2-dimensional semiconductor. The method includes forming a semiconductor layer on a substrate, implanting ions into the semiconductor layer, forming a doped layer formed of a 2-dimensional semiconductor layer or an organic semiconductor layer on the semiconductor layer, and doping the doped layer by diffusing the ions of the semiconductor layer into the doped layer through annealing the substrate.
    Type: Application
    Filed: July 24, 2014
    Publication date: July 30, 2015
    Applicant: Sungkyunkwan University Research & Business Foundation
    Inventors: Jin-hong PARK, Hyung-youl PARK, Jae-woo SHIM, Jae-ho LEE
  • Publication number: 20150214304
    Abstract: Provided are graphene transistors having a tunable barrier. The graphene transistor includes a semiconductor substrate, an insulating thin film disposed on the semiconductor substrate, a graphene layer on the insulating thin film, a first electrode connected to an end of the graphene layer, a second electrode that is separate from an other end of the graphene layer and contacts the semiconductor substrate, a gate insulating layer covering the graphene layer, and a gate electrode on the gate insulating layer, wherein an energy barrier is formed between the semiconductor substrate and the graphene layer.
    Type: Application
    Filed: July 10, 2014
    Publication date: July 30, 2015
    Applicant: Sungkyunkwan University Research & Business Foundation
    Inventors: Jin-hong PARK, Jae-woo SHIM, Hyung-youl PARK, Jae-ho LEE
  • Patent number: 9070617
    Abstract: Embodiments of this invention provide a method to fabricate an electrical contact. The method includes providing a substrate of a compound Group III-V semiconductor material having at least one electrically conducting doped region adjacent to a surface of the substrate. The method further includes fabricating the electrical contact to the at least one electrically conducting doped region by depositing a single crystal layer of germanium over the surface of the substrate so as to at least partially overlie the at least one electrically conducting doped region, converting the single crystal layer of germanium into a layer of amorphous germanium by implanting a dopant, forming a metal layer over exposed surfaces of the amorphous germanium layer, and performing a metal-induced crystallization (MIC) process on the amorphous germanium layer having the overlying metal layer to convert the amorphous germanium layer to a crystalline germanium layer and to activate the implanted dopant.
    Type: Grant
    Filed: June 3, 2013
    Date of Patent: June 30, 2015
    Assignee: International Business Machines Corporation
    Inventors: Jeehwan Kim, Jin-Hong Park, Devendra Sadana, Kuen-Ting Shiu
  • Patent number: 9059792
    Abstract: A method and system for removing noise due to bias electric power (MIC_Bias) or Time Division Multiple Access (TDMA) noise are provided. The system includes an interface with a microphone contact, for connecting to an accessory, an Analog-to-Digital (AD) converter for converting an analog voltage level, input via the microphone contact, into a digital voltage level, an audio processing unit for processing an audio signal input via the microphone contact, a switch for at least one of connecting and disconnecting the microphone contact and the AD converter, and a controller. The controller compares the digital voltage level with voltage levels stored in a look up table. The controller identifies a type of accessory connected to the interface. The controller also switches off the switch to prevent noise from being introduced into the audio signal via a wire connecting the microphone contact and the AD converter.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: June 16, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin Hong Park, Young Jae Ko, Min Seok Kim
  • Patent number: 9031620
    Abstract: A second microphone device of a mobile terminal, and more particularly, a second microphone device of a mobile terminal for preventing various limitations caused by mounting of a second microphone, is provided. The second microphone device includes an ear jack connector having an insertion space, a microphone hole connected at one end to the insertion space, and a second microphone connected at the other end of the microphone hole, thereby improving ambient noise removal performance of the mobile terminal without adversely affecting its appearance.
    Type: Grant
    Filed: June 19, 2012
    Date of Patent: May 12, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Jae Ko, Min Seok Kim, Jin Hong Park