Patents by Inventor Jin-hong Park
Jin-hong Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9013495Abstract: A rendering apparatus and method are provided. The rendering method includes: reading a block, corresponding to a fragment, from among compressed blocks stored in a depth buffer, by considering frequency information corresponding to the fragment and prepared in advance; and performing a depth test for the fragment by considering the restored block.Type: GrantFiled: April 14, 2008Date of Patent: April 21, 2015Assignees: Samsung Electronics Co., Ltd., Yonsei University Industry FoundationInventors: Sang-oak Woo, Seok-yoon Jung, Kwon-taek Kwon, Tack-don Han, Woo-chan Park, Woo-nam Chung, Jin-hong Park, Jeong-soo Park
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Patent number: 8999825Abstract: This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-Ge layer on a substrate, performing ion implantation on the p-Ge layer to form an n+ Ge region or performing in-situ doping on the p-Ge layer and then etching to form an n+ Ge region or depositing an oxide film on the p-Ge layer and performing patterning, etching and in-situ doping to form an n+ Ge layer, forming a capping oxide film, performing annealing at 600˜700° C. for 1˜3 hr, and depositing an electrode, and in which annealing enables Ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device.Type: GrantFiled: November 21, 2013Date of Patent: April 7, 2015Assignees: Korea Advanced Nano Fab Center, Sungkyunkwan University Research & Business FoundationInventors: Won Kyu Park, Jong Gon Heo, Dong Hwan Jun, Jin Hong Park, Jae Woo Shim
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Patent number: 8846440Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.Type: GrantFiled: December 12, 2013Date of Patent: September 30, 2014Assignee: International Business Machines CorporationInventors: Solomon Assefa, Jeehwan Kim, Jin-Hong Park, Yurii A. Vlasov
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Patent number: 8841162Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.Type: GrantFiled: December 12, 2013Date of Patent: September 23, 2014Assignee: International Business Machines CorporationInventors: Solomon Assefa, Jeehwan Kim, Jin-Hong Park, Yurii A. Vlasov
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Publication number: 20140187021Abstract: This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-Ge layer on a substrate, performing ion implantation on the p-Ge layer to form an n+ Ge region or performing in-situ doping on the p-Ge layer and then etching to form an n+ Ge region or depositing an oxide film on the p-Ge layer and performing patterning, etching and in-situ doping to form an n+ Ge layer, forming a capping oxide film, performing annealing at 600˜700° C. for 1˜3 hr, and depositing an electrode, and in which annealing enables Ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device.Type: ApplicationFiled: November 21, 2013Publication date: July 3, 2014Applicant: Korea Advanced Nano Fab CenterInventors: Won Kyu Park, Jong Gon Heo, Dong Hwan Jun, Jin Hong Park, Jae Woo Shim
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Publication number: 20140134790Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.Type: ApplicationFiled: December 12, 2013Publication date: May 15, 2014Applicant: International Business Machines CorporationInventors: Solomon Assefa, Jeehwan Kim, Jin-Hong Park, Yurii A. Vlasov
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Publication number: 20140134789Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.Type: ApplicationFiled: December 12, 2013Publication date: May 15, 2014Applicant: International Business Machines CorporationInventors: Solomon Assefa, Jeehwan Kim, Jin-Hong Park, Yurii A. Vlasov
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Publication number: 20140111782Abstract: Provided are a lithography apparatus, a method for lithography and a stage system. The lithography apparatus includes a reticle stage having a reticle, at least one nozzle on at least one surface of the reticle stage and configured to allow shielding gas to flow to a surface of the reticle to form an air curtain, and a gas supply unit configured to supply the nozzle with the shielding gas.Type: ApplicationFiled: July 16, 2013Publication date: April 24, 2014Inventors: Jin-Hong PARK, Jeong-Ho YEO, Joo-On PARK, Chang-Min PARK
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Patent number: 8614116Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.Type: GrantFiled: July 24, 2012Date of Patent: December 24, 2013Assignee: International Business Machines CorporationInventors: Solomon Assefa, Jeehwan Kim, Jin-Hong Park, Yurii A. Vlasov
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Publication number: 20130264658Abstract: Embodiments of this invention provide a method to fabricate an electrical contact. The method includes providing a substrate of a compound Group III-V semiconductor material having at least one electrically conducting doped region adjacent to a surface of the substrate. The method further includes fabricating the electrical contact to the at least one electrically conducting doped region by depositing a single crystal layer of germanium over the surface of the substrate so as to at least partially overlie the at least one electrically conducting doped region, converting the single crystal layer of germanium into a layer of amorphous germanium by implanting a dopant, forming a metal layer over exposed surfaces of the amorphous germanium layer, and performing a metal-induced crystallization (MIC) process on the amorphous germanium layer having the overlying metal layer to convert the amorphous germanium layer to a crystalline germanium layer and to activate the implanted dopant.Type: ApplicationFiled: June 3, 2013Publication date: October 10, 2013Inventors: Jeehwan Kim, Jin-Hong Park, Devendra Sadana, Kuen-Ting Shiu
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Patent number: 8536043Abstract: Embodiments of this invention provide a method to fabricate an electrical contact. The method includes providing a substrate of a compound Group III-V semiconductor material having at least one electrically conducting doped region adjacent to a surface of the substrate. The method further includes fabricating the electrical contact to the at least one electrically conducting doped region by depositing a single crystal layer of germanium over the surface of the substrate so as to at least partially overlie the at least one electrically conducting doped region, converting the single crystal layer of germanium into a layer of amorphous germanium by implanting a dopant, forming a metal layer over exposed surfaces of the amorphous germanium layer, and performing a metal-induced crystallization (MIC) process on the amorphous germanium layer having the overlying metal layer to convert the amorphous germanium layer to a crystalline germanium layer and to activate the implanted dopant.Type: GrantFiled: January 31, 2011Date of Patent: September 17, 2013Assignee: International Business Machines CorporationInventors: Jeehwan Kim, Jin-Hong Park, Devendra Sadana, Kuen-Ting Shiu
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Patent number: 8384876Abstract: A method of detecting reticle error may include using an optical source of an exposure unit to cause light to be incident on a reticle installed in the exposure unit, and detecting the reticle error using only 0th diffraction light from among diffraction lights transmitted through the reticle. A method of detecting reticle error may include: installing a reticle, including a mask substrate and mask patterns having a critical dimension formed on the mask substrate, in an exposure unit to cause light to be incident on the reticle; exposing a photoresist film disposed on a wafer in the exposure unit using only 0th diffraction light from among diffraction lights transmitted through the reticle; developing the exposed photoresist film; and analyzing a thickness change, an image, or the thickness change and image of the developed photoresist film, in order to detect the reticle error at a wafer level.Type: GrantFiled: July 14, 2009Date of Patent: February 26, 2013Assignee: Samsung Electronics, Co., Ltd.Inventors: Jin-seok Heo, Jin-hong Park, Dae-youp Lee, Jeong-ho Yeo
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Publication number: 20130012274Abstract: A second microphone device of a mobile terminal, and more particularly, a second microphone device of a mobile terminal for preventing various limitations caused by mounting of a second microphone, is provided. The second microphone device includes an ear jack connector having an insertion space, a microphone hole connected at one end to the insertion space, and a second microphone connected at the other end of the microphone hole, thereby improving ambient noise removal performance of the mobile terminal without adversely affecting its appearance.Type: ApplicationFiled: June 19, 2012Publication date: January 10, 2013Applicant: SAMSUNG ELECTRONICS CO. LTD.Inventors: Young Jae KO, Min Seok KIM, Jin Hong PARK
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Publication number: 20120288992Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.Type: ApplicationFiled: July 24, 2012Publication date: November 15, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Solomon Assefa, Jeehwan Kim, Jin-Hong Park, Yurii A. Vlasov
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Patent number: 8304272Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, implanting n-type ions in the Ge layer, patterning the n-type Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline n-type Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.Type: GrantFiled: February 10, 2011Date of Patent: November 6, 2012Assignee: International Business Machines CorporationInventors: Solomon Assefa, Jeehwan Kim, Jin-Hong Park, Yurii A. Vlasov
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Patent number: 8287792Abstract: In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree.Type: GrantFiled: January 27, 2010Date of Patent: October 16, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Jeong-Hoon Lee, Jeong-Ho Yeo, Joo-On Park, In-Sung Kim, Doo-Hoon Goo, Jin-Hong Park, Chang-Min Park
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Publication number: 20120257768Abstract: A method and system for removing noise due to bias electric power (MIC_Bias) or Time Division Multiple Access (TDMA) noise are provided. The system includes an interface with a microphone contact, for connecting to an accessory, an Analog-to-Digital (AD) converter for converting an analog voltage level, input via the microphone contact, into a digital voltage level, an audio processing unit for processing an audio signal input via the microphone contact, a switch for at least one of connecting and disconnecting the microphone contact and the AD converter, and a controller. The controller compares the digital voltage level with voltage levels stored in a look up table. The controller identifies a type of accessory connected to the interface. The controller also switches off the switch to prevent noise from being introduced into the audio signal via a wire connecting the microphone contact and the AD converter.Type: ApplicationFiled: March 8, 2012Publication date: October 11, 2012Applicant: SAMSUNG ELECTRONICS CO. LTD.Inventors: Jin Hong PARK, Young Jae KO, Min Seok KIM
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Publication number: 20120193687Abstract: Embodiments of this invention provide a method to fabricate an electrical contact. The method includes providing a substrate of a compound Group III-V semiconductor material having at least one electrically conducting doped region adjacent to a surface of the substrate. The method further includes fabricating the electrical contact to the at least one electrically conducting doped region by depositing a single crystal layer of germanium over the surface of the substrate so as to at least partially overlie the at least one electrically conducting doped region, converting the single crystal layer of germanium into a layer of amorphous germanium by implanting a dopant, forming a metal layer over exposed surfaces of the amorphous germanium layer, and performing a metal-induced crystallization (MIC) process on the amorphous germanium layer having the overlying metal layer to convert the amorphous germanium layer to a crystalline germanium layer and to activate the implanted dopant.Type: ApplicationFiled: January 31, 2011Publication date: August 2, 2012Applicant: International Business Machines CorporationInventors: Jeehwan Kim, Jin-Hong Park, Devendra Sadana, Kuen-Ting Shiu
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Publication number: 20120001283Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, implanting n-type ions in the Ge layer, patterning the n-type Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline n-type Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.Type: ApplicationFiled: February 10, 2011Publication date: January 5, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Solomon Assefa, Jeehwan Kim, Jin-Hong Park, Yurii A. Vlasov
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Patent number: 8038786Abstract: Disclosed are heat-ray cutoff compounds, films and method using them. The heat-ray compound is produced by dispersing conductive nanoparticles in an amphoteric solvent with acids and dispersion sol, which provides a low cost production for the heat-ray cutoff films because it is able to any resin binder without sorting the kinds of resin binders (hydrolic or alcoholic, or anti-hydrolic).Type: GrantFiled: March 17, 2003Date of Patent: October 18, 2011Assignee: Hae-Wook LEEInventors: Hae-Wook Lee, Jin-Hong Park