Abstract: This disclosure provides devices and methods for 3-D device packaging with backside interconnections. One or more device elements can be hermetically sealed from an ambient environment, such as by vacuum lamination and bonding. One or more via connections provide electrical interconnection from a device element to a back side of a device substrate, and provide electrical interconnection from the device substrate to external circuitry on the back side of the device. The external circuitry can include a printed circuit board or flex circuit. In some implementations, an electrically conductive pad is provided on the back side, which is electrically connected to at least one of the via connections. In some implementations, the one or more via connections are electrically connected to one or more electrical components or interconnections, such as a TFT or a routing line.

Abstract: This disclosure provides devices and methods for 3-D device packaging with backside interconnections. One or more device elements can be hermetically sealed from an ambient environment, such as by vacuum lamination and bonding. One or more via connections provide electrical interconnection from a device element to a back side of a device substrate, and provide electrical interconnection from the device substrate to external circuitry on the back side of the device. The external circuitry can include a printed circuit board or flex circuit. In some implementations, an electrically conductive pad is provided on the back side, which is electrically connected to at least one of the via connections. In some implementations, the one or more via connections are electrically connected to one or more electrical components or interconnections, such as a TFT or a routing line.

Abstract: This disclosure provides devices and methods for 3-D device packaging with backside interconnections. One or more device elements can be hermetically sealed from an ambient environment, such as by vacuum lamination and bonding. One or more via connections provide electrical interconnection from a device element to a back side of a device substrate, and provide electrical interconnection from the device substrate to external circuitry on the back side of the device. The external circuitry can include a printed circuit board or flex circuit. In some implementations, an electrically conductive pad is provided on the back side, which is electrically connected to at least one of the via connections. In some implementations, the one or more via connections are electrically connected to one or more electrical components or interconnections, such as a TFT or a routing line.

Abstract: This disclosure provides devices and methods for 3-D device packaging with backside interconnections. One or more device elements can be hermetically sealed from an ambient environment, such as by vacuum lamination and bonding. One or more via connections provide electrical interconnection from a device element to a back side of a device substrate, and provide electrical interconnection from the device substrate to external circuitry on the back side of the device. The external circuitry can include a printed circuit board or flex circuit. In some implementations, an electrically conductive pad is provided on the back side, which is electrically connected to at least one of the via connections. In some implementations, the one or more via connections are electrically connected to one or more electrical components or interconnections, such as a TFT or a routing line.

Abstract: Some implementations of augmented reality glasses disclosed herein include an eyeglass substrate, two or more display elements, image optics configured for coupling light from the display elements into the eyeglass substrate and beam-splitting optics configured for directing light from the eyeglass substrate towards a viewer's eye and for allowing partial light from the real-world scene to arrive at a viewer's eye. The image optics may include one or more image optics lenses formed in the eyeglass substrate and may be positioned out of a line of sight of the viewer's eye when the viewer is wearing the augmented reality glasses. The image optics may be capable of coupling light from the display elements toward the beam-splitting optics along folded light paths caused by internal reflection within the eyeglass substrate.

Abstract: Some implementations of augmented reality glasses disclosed herein include an eyeglass substrate, two or more display elements, image optics configured for coupling light from the display elements into the eyeglass substrate and beam-splitting optics configured for directing light from the eyeglass substrate towards a viewer's eye and for allowing partial light from the real-world scene to arrive at a viewer's eye. The image optics may include one or more image optics lenses formed in the eyeglass substrate and may be positioned out of a line of sight of the viewer's eye when the viewer is wearing the augmented reality glasses. The image optics may be capable of coupling light from the display elements toward the beam-splitting optics along folded light paths caused by internal reflection within the eyeglass substrate.

Abstract: This disclosure provides thin film transistors (TFTs) including p-n hetero-junction structures. A p-n hetero-junction structure may include a junction between a narrow bandgap material and a wide bandgap material. The narrow bandgap material, which may be an oxide, nitride, selenide, or sulfide, is the active channel material of the TFT and may provide relatively high carrier mobility. The hetero-junction structures facilitate band-to-band tunneling and suppression of TFT off-currents. In various implementations, the TFTs may be formed on flexible substrates and have low temperature processing capabilities.

Abstract: Provided herein are methods of depositing p-type metal oxide thin films by atomic layer deposition (ALD). Also provided are p-type metal oxide thin films and TFTs including p-type metal oxide channels. In some implementations, the p-type metal oxide thin films have a metal and oxygen vacancy defect density of less than 1019/cm3. The p-type metal oxide thin films may be electrically active throughout the entire thicknesses of the thin films.

Abstract: This disclosure provides methods and apparatus for wireless power transfer using an array of structures. Each of the structures can include a piezoelectric material portion and a magnetic material portion. Each of the magnetic material portions can respond to an alternating magnetic field generated by an external transmitter device, resulting in the structures oscillating and straining the corresponding piezoelectric material portions to generate electrical current.

Abstract: This disclosure provides methods and apparatus for adjusting magnetic orientations of different sets of magnets in an array. In one aspect, a first set of magnets in the array can be heated. A magnetic field with a first orientation can be applied to the array of the magnets, and adjusting the magnetic orientations of the first set of magnets to the first orientation of the magnetic field. A second set of magnets in the array can be heated and the magnetic field can have a second orientation. The magnetic orientations of the second set of magnets can be adjusted to the second orientation.

Abstract: This disclosure provides a display device that can achieve a neutral white color by combining a first tinted native white color produced by a first display element of the display device or a portion thereof with a second tinted native white color produced by a second display element of the display device or a portion of the first display element. The tint of the first tinted native white color and the second tinted native white color can be complementary to each other. The first tinted native white color and the second tinted native white color can be combined using spatial and/or temporal dithering.

Abstract: This disclosure provides display devices including at least one display element having a tinted native white color. The disclosure provides method of achieving the neutral white color by combining the tinted native white color produced by the at least one display element with a primary color that is complementary to the tint of the native white color using spatial and/or temporal dithering.

Abstract: This disclosure provides systems, methods and apparatus for light-guiding layers including light-turning features with multiple reflective surfaces oriented at different angles to the light-guiding layer. In one aspect, the multiple reflective surfaces may be located on each individual light-turning feature, while in another aspect, the multiple reflective surfaces may be located on separate light-turning features. The use of multiple reflective surfaces oriented at different angles can improve the efficiency and appearance of a frontlight system using such a light-guiding layer.

Abstract: This disclosure provides systems, methods and apparatus for increasing the efficiency of frontlight systems using thin waveguides. In one aspect, a narrowing reflective conduit can be used to condense light from a light source which is thicker than the waveguide, and inject it into the waveguide. A phosphor strip at the exit aperture of the narrowing reflective conduit can inject light with a diffuse directional profile independent of the directional profile of light within the narrowing reflective conduit.

Abstract: This disclosure provides apparatus, systems and methods for an electromechanical systems (EMS) device having one or more flexible support posts. In one aspect, the EMS device includes a substrate, a stationary electrode over the substrate, one or more flexible support posts over the substrate, and a movable electrode over the stationary electrode and supported by the one or more flexible support posts. The movable electrode is configured to move across a gap between the movable electrode and the stationary electrode upon electrostatic actuation, where the one or more flexible support posts include a first organic material and can be configured to compress to permit the movable electrode to move across the gap.

Abstract: This disclosure provides systems, methods and apparatus for packaging an array of electromechanical systems (EMS) devices such as interferometric modulators (IMODs). In one aspect, a backplate including an aperture can be sealed to a substrate supporting an array of unreleased EMS devices to form a package. A release etch may be performed through the aperture after sealing the backplate to the substrate. By performing the release etch after sealing the backplate to the substrate, the effect on the array of EMS devices of the formation and outgassing of the sealant material can be reduced.

Abstract: This disclosure provides systems, methods and apparatus for reducing leakage in a driver circuit. In one aspect, the driver circuit may operate in a scanning time and an idle time. The driver circuit may update display elements during the scanning time. During the idle time, inputs to the driver circuit may be configured to be floating to reduce leakage.

Abstract: This disclosure provides methods and apparatuses for annealing an oxide semiconductor in a thin film transistor (TFT). In one aspect, the method includes providing a substrate with a partially fabricated TFT structure formed on the substrate. The partially fabricated TFT structure can include an oxide semiconductor layer and a dielectric oxide layer on the oxide semiconductor layer. The oxide semiconductor layer is annealed by heating the dielectric oxide layer with an infrared laser under ambient conditions to a temperature below the melting temperature of the oxide semiconductor layer. The infrared laser radiation can be substantially absorbed by the dielectric oxide layer and can remove unwanted defects from the oxide semiconductor layer at an interface in contact with the dielectric oxide layer.

Abstract: This disclosure provides thin film transistors (TFTs) including p-n hetero-junction structures. A p-n hetero junction structure may include a junction between a narrow bandgap material and a wide bandgap material. The narrow bandgap material, which may be an oxide, nitride, selenide, or sulfide, is the active channel material of the TFT and may provide relatively high carrier mobility. The hetero junction structures facilitate band-to-band tunneling and suppression of TFT off-currents. In various implementations, the TFTs may be formed on flexible substrates and have low temperature processing capabilities.

Abstract: Provided herein are methods of depositing p-type metal oxide thin films by atomic layer deposition (ALD). Also provided are p-type metal oxide thin films and TFTs including p-type metal oxide channels. In some implementations, the p-type metal oxide thin films have a metal and oxygen vacancy defect density of less than 1019/cm3. The p-type metal oxide thin films may be electrically active throughout the entire thicknesses of the thin films.