Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for applying field-sequential color (FSC) methods to displays that include single-mirror interferometric modulators (IMODs), which may be multi-state IMODs or analog IMODs. In one aspect, grayscale levels may be provided by varying a mirror/absorber gap height between black and white states. In other implementations, grayscale levels may be obtained by varying the gap height between the black state and second-order color peaks.

Abstract: This disclosure provides systems, methods, and apparatus for an analog or multistate electromechanical systems display devices including movable absorber together with a movable reflective layers. In one aspect, an electromechanical systems display device may include a movable reflector assembly and a movable absorber assembly. The absorber assembly may be disposed between the reflector assembly and a substrate. The absorber assembly may be configured to move to an absorber white state position proximate the reflector assembly and defining a first gap when the reflector assembly is in a reflector white/black position. The absorber assembly may be configured to move to a closed position closer to the substrate, defining a second gap, when the reflector assembly is in the reflector white/black position. The reflector assembly may be configured to move from the reflector white/black position to increase a height of the second gap when the absorber assembly is in the closed position.

Abstract: Systems and methods are described herein for defining and parameterizing signals or system responses with finite rate of innovation (FRI) signal processing. A delta-sigma modulator is used at a low sampling rate to digitize an analog signal for FRI processing. This allows for reduced or eliminated analog pre-filtering while still utilizing low sample rates for an overall reduction in circuit size and power dissipation over conventional FRI signal acquisition techniques.

Abstract: This disclosure provides systems, methods and apparatus for a thin film stack with surface-conditioning buffer layers. In one aspect, the thin film stack includes a plurality of thin film layers each having a thickness greater than about 10 nm and a plurality of surface-conditioning buffer layers each having a thickness between about 1 nm and about 10 nm. The surface-conditioning buffer layers are alternatingly disposed between the thin film layers. Each of the surface-conditioning buffer layers are formed with the same or substantially the same thickness and composition. In some implementations, the surface-conditioning buffer layers are formed by atomic layer deposition.

Abstract: This disclosure provides implementations of multi-gate transistors, structures, devices, apparatus, systems, and related processes. In one aspect, a device includes a thin-film semiconducting layer arranged over a substrate. A drain and source are coupled to the semiconducting layer. The device also includes first, second and third gates all arranged adjacent the semiconducting layer and configured to receive first, second, and third control signals, respectively. Dielectric layers insulate the gates from the semiconducting layer and from one another. In a first mode, the first, second, and third gates are configured such that charge is stored in a potential well in a region of the semiconducting layer adjacent the second gate. In a second mode, the first, second and third gate electrodes are configured such that the stored charge is transferred through the region of the semiconducting layer adjacent the third gate electrode and through the source to a load.

Abstract: This disclosure provides systems, methods and apparatus for an electromechanical systems display device. In one aspect, a grey scale electromechanical systems display device may include a reflector assembly disposed on a support dielectric layer, a substrate, and an absorber assembly. The absorber assembly may include a metal layer. The absorber assembly may be configured to move to a first position defining a first cavity between the absorber assembly and the substrate such that the device reflects a white light. The absorber assembly also may be configured to move to a second position defining a second cavity between the absorber assembly and the reflector assembly such that the device substantially does not reflect light.

Abstract: A display apparatus may include a multi-state IMOD, such as an analog IMOD (AIMOD), a 3-state IMOD (such as having a white state, a black state and one colored state) or a 5-state IMOD (such as having a white state, a black state and three colored states). The multi-state IMOD may include a movable reflective layer and an absorber stack. The absorber stack may include a first absorber layer having a first absorption coefficient and a first absorption peak at a first wavelength, a second absorber layer having a second absorption coefficient and a second absorption peak at a second wavelength, and a third absorber layer having a third absorption coefficient and a third absorption peak at a third wavelength. The first, second and third absorption layers may have absorption levels that drop to nearly zero at the center of each neighboring absorber layer's absorption peak.

Abstract: Systems and methods are described herein for defining and parameterizing signals or system responses containing pulses of varying width. The parameters may define the signal and therefore can be equated to a compressed version of the original signal.

Abstract: This disclosure provides systems, methods and apparatus for fabricating thin film transistor (TFT) devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. Metal cations are implanted in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The metal cation implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate.

Abstract: This disclosure provides systems, methods and apparatus for an electromechanical systems reflective display device. In one aspect, an electromechanical systems display device includes a reflective layer and an absorber layer. The absorber layer is spaced apart from the reflective layer to define a cavity between the absorber layer and the reflective layer. The absorber layer is capable of transmitting light into the cavity, absorbing light, and reflecting light, and includes a metal layer. A plurality of matching layers are on a surface of the absorber layer facing away from the cavity, the plurality of matching layers including a first matching layer disposed on the absorber layer and a second matching layer disposed on the first matching layer.

Abstract: This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate including a silicon layer on the substrate surface is provided. A metal layer is formed on the silicon layer. A first dielectric layer is formed on the metal layer and exposed regions of the substrate surface. The metal layer and the silicon layer are treated, and the metal layer reacts with the silicon layer to form a silicide layer and a gap between the silicide layer and the dielectric layer. An amorphous silicon layer is formed on the first dielectric layer. The amorphous silicon layer is heated and cooled. The amorphous silicon layer overlying the substrate surface cools at a faster rate than the amorphous silicon layer overlying the gap.

Abstract: This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate having a source region, a drain region, and a channel region between the source region and the drain region is provided. The substrate also includes an oxide semiconductor layer, a first dielectric layer overlying the channel region, and a first metal layer on the dielectric layer. A second metal layer is formed on the oxide semiconductor layer overlying the source region and the drain region. The oxide semiconductor layer and the second metal layer are treated to form a heavily doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source region and the drain region. An oxide in the second metal layer also can be formed.

Abstract: A variable bandwidth, distributed amplifier circuit includes an input transmission line; an output transmission line; and a plurality of amplifier cells having a respective plurality of cell inputs distributed along the input transmission line and cell outputs distributed along said output transmission line. Each amplifier cell comprises a cascode amplifier having an input transistor, an output transistor, and a variable impedance device in a circuit branch coupled to a gate of the output transistor. The impedance of the variable impedance device is responsive to a variable bias control signal.

Abstract: A variable bandwidth, distributed amplifier circuit includes an input transmission line; an output transmission line; and a plurality of amplifier cells having a respective plurality of cell inputs distributed along the input transmission line and cell outputs distributed along said output transmission line. Each amplifier cell comprises a cascode amplifier having an input transistor, an output transistor, and a variable impedance device in a circuit branch coupled to a gate of the output transistor. The impedance of the variable impedance device is responsive to a variable bias control signal.