Abstract: This disclosure provides systems, methods and apparatus for fabricating thin film transistor (TFT) devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. Metal cations are implanted in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The metal cation implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate.

Abstract: This disclosure provides systems, methods and apparatus for forming light-guiding layers including embossed light-turning features. In one aspect, an aluminized polymer layer can be embossed onto a light-transmissive layer having a high index of refraction to form the light-guiding layer. In another aspect, the light-guiding layers may be formed using a mold that has positive relief features and features which mechanically separate a portion of an embossed reflective layer from surrounding portions of the embossed reflective layer to form light-turning features.

Abstract: This disclosure provides systems, methods and apparatus for forming electromechanical devices having a gap between a movable layer and a fixed layer. In one aspect, the movable layer may be supported by hinge structures, and the design of the hinge structure may be controlled to provide a desired amount of flexure, providing electromechanical devices with a desired gap height. The height of the gap may be larger than the thickness a sacrificial material used during the fabrication process. In another aspect, the design of the hinge structure may be used to control threshold voltages of electromechanical devices.

Abstract: This disclosure provides systems, methods and apparatus for measuring a temperature of a display. In one aspect, a circuit may use one or more stages of diodes or diode-connected transistors providing the functionality of diodes. Each stage may include the functionality of diodes in opposite directions. A direct current (DC) current source or an alternating current (AC) voltage source may be applied to the diodes or diode-connected transistors to measure the temperature of the display.

Abstract: This disclosure provides systems, methods, and apparatus related to electromechanical systems display devices. In one aspect, an apparatus includes a display assembly, a sensor, and a processor. The display assembly may include an array of electromechanical systems display devices. The sensor may be configured to provide a signal indicative of an illumination angle, a viewing angle, or both, with respect to a line perpendicular to the display assembly. The processor may be configured to receive the signal from the sensor, to determine the illumination angle and/or viewing angle, and to process image data to compensate for the determined illumination angle and/or viewing angle. In one implementation, the image data is processed to compensate for a shift in a wavelength of light reflected from at least one of the electromechanical systems display devices that would have occurred as a result of a non-normal illumination and/or viewing angle.

Abstract: This disclosure provides systems, methods and apparatus for light-guiding layers including asymmetrical light-turning features. In one aspect, the asymmetrical light-turning features may include a leading edge oriented at an angle which turns light out of the light-guiding layer, and a near-vertical trailing edge which reduces light leakage from the light-guiding layer. In another aspect, the asymmetrical light-turning features of the light-guiding layer may be oriented in the same or similar direction, and may be distributed with decreasing density adjacent a light source to provide more even illumination.

Abstract: This disclosure provides methods and apparatuses for annealing an oxide semiconductor in a thin film transistor (TFT). In one aspect, the method includes providing a substrate with a partially fabricated TFT structure formed on the substrate. The partially fabricated TFT structure can include an oxide semiconductor layer and a dielectric oxide layer on the oxide semiconductor layer. The oxide semiconductor layer is annealed by heating the dielectric oxide layer with an infrared laser under ambient conditions to a temperature below the melting temperature of the oxide semiconductor layer. The infrared laser radiation can be substantially absorbed by the dielectric oxide layer and can remove unwanted defects from the oxide semiconductor layer at an interface in contact with the dielectric oxide layer.

Abstract: This disclosure provides systems, methods and apparatus for illumination, such as for illuminating displays, including reflective displays. An illumination device may include a light-extracting, diffusive holographic medium. The holographic medium may be a holographic film and may be disposed on the surface of a light guide, and includes a hologram that both extracts light out of the light guide and diffuses this extracted light for propagation towards the display elements of the display. The hologram can extract light by redirecting light, which is propagating within the light guide, so that the light propagates out of the light. The diffusion occurs upon the light being redirected, as the hologram redirects the light towards the light guide in a controlled range of angles.

Abstract: Some implementations disclosed herein include a dual lens system capable of maintaining a substantially constant color within a well-defined angular range of light incident on a reflective pixel. Each reflective pixel (or subpixel) of a display may include a primary lens and a field lens. The field lens may be positioned at a distance equal to a focal length of the primary lens. Each plane wave of incident light arriving at the primary lens aperture may be focused on a unique location of the focal plane, but may emerge from the field lens within the same range of angles. If a reflective pixel is positioned below the field lens, the reflected color should be substantially the same within a range of viewing angles. The range of angles may be defined by the numerical aperture of the lens system and by black mask material disposed between the reflective pixels or subpixels.

Abstract: Methods, devices, and computer program products for robust estimation of color-dependent measurements are described herein. In one aspect, a method for generating a reference color grid that may be placed beside a color-dependent measuring device is disclosed. The reference color grid may contain a number of colors which enable a mapping from the color space of a testing device to a reference color space. This mapping may allow a function that is able to determine an estimate of a color-dependent measurement based on a color in the reference color space to be used. In another aspect, a method for robust estimation of color-dependent measurement using a reference color guide is disclosed.

Abstract: Various implementations described herein involve multi-state interferometric modulators (MS-IMODs) without dielectric layers capable of affecting optical performance formed on the mirrors. The MS-IMODs disclosed herein may include a novel combination of high refractive index and low refractive index layers in the absorber stack. Some such MS-IMODs include absorber stacks having an absorber layer, a first high-index layer disposed between the absorber layer and the substrate, a low-index layer disposed between the absorber layer and the first high-index layer and a second high-index layer disposed on a side of the absorber layer facing the mirror. The absorber stack and the mirror may define a gap therebetween and may be capable of being positioned in a plurality of positions relative to one another to form a plurality of gap heights. In some implementations, the closest position corresponds with a black state gap height.

Abstract: A display assembly includes an array of display elements disposed between a first substrate and a second substrate, the array of display elements including one or more thin film transistors (TFTs). A black mask arrangement is disposed between the first substrate and the second substrate, the black mask arrangement being configured to prevent light entering the display assembly from reaching the TFTs.

Abstract: This disclosure provides systems, methods and apparatus for a thin film transistor (TFT) device on a substrate. In one aspect, the TFT device includes a gate electrode, an oxide semiconductor layer, and a gate insulator between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer includes at least two metal oxides, with the two metal oxides having a varying concentration relative to one another between a lower surface and an upper surface of the oxide semiconductor layer. The TFT device also includes a source metal adjacent to a portion of the oxide semiconductor layer and a drain metal adjacent to another portion of the oxide semiconductor layer. The composition of the oxide semiconductor layer can be precisely controlled by a sequential deposition technique using atomic layer deposition (ALD).

Abstract: This disclosure provides apparatus, systems and methods for an electromechanical systems (EMS) device having one or more flexible support posts. In one aspect, the EMS device includes a substrate, a stationary electrode over the substrate, one or more flexible support posts over the substrate, and a movable electrode over the stationary electrode and supported by the one or more flexible support posts. The movable electrode is configured to move across a gap between the movable electrode and the stationary electrode upon electrostatic actuation, where the one or more flexible support posts include a first organic material and can be configured to compress to permit the movable electrode to move across the gap.

Abstract: This disclosure provides apparatus, systems and methods for an electromechanical systems (EMS) device made of organic materials. In one aspect, the EMS device includes a stationary electrode over a substrate and a movable electrode over the stationary electrode, where the movable electrode is configured to move across a gap between the movable electrode and the stationary electrode by electrostatic actuation. One or more layers between the movable electrode and the stationary electrode may be made of polymer material. One or more layers in the EMS device may include an optical layer made of polymer material and configured to attenuate energy of light corresponding to one or more wavelength ranges. In some implementations, the optical layer may include a plurality of absorber particles in a host material that is electrically insulating.

Abstract: This disclosure provides apparatus, systems and methods for an electromechanical systems (EMS) device having a non-electrically active absorber. In one aspect, the EMS device includes a stationary electrode over a substrate, a dielectric layer over the stationary electrode, an absorber over the dielectric layer, and a movable electrode over the absorber. The movable electrode is configured to move to a plurality of positions between the absorber and the movable electrode to define a plurality of gap heights. Furthermore, the absorber includes a non-electrically active material. In some implementations, the absorber can include an optical layer having a plurality of particles in an electrically insulating material.

Abstract: This disclosure provides systems, methods and apparatus for enhancing the brightness and/or contrast ratio of display devices. In one aspect, the display devices can include an annular diffuser that is configured to scatter light into a ring shaped region. The annular diffuser can include a plurality of axicon lenses or holographic features. The reflective display can include an annular diffuser to shift the direction along which most of the modulated light is scattered away from the direction along which light is specularly reflected by the display devices to reduce specular glare and enhance brightness and/or contrast ratio.

Abstract: This disclosure provides systems, methods and apparatus related to an electromechanical display device. In one aspect, an analog interferometric modulator includes a reflective display pixel having a reflector, and a movable first absorbing layer positionable at a distance d1 from the reflector, the first absorbing layer and the reflector defining a first gap therebetween. The apparatus also includes a second absorbing layer disposed at a distance d2 from the first absorbing layer, the first absorbing layer disposed between the second absorbing layer and the reflector, the second absorbing layer and the first absorbing layer defining a second gap therebetween. In addition, at least two of the reflector, the first absorbing layer and second absorbing layer are movable to synchronously either increase or decrease the thickness dimension of the first gap and the second gap.

Abstract: The disclosed technology relates to methods of patterning elongated structures. In one aspect, a method of forming pillars includes providing a substrate and providing a plurality of beads on a surface of the substrate. Regions of the surface without a directly overlying bead are exposed. The method additionally includes selectively etching the exposed regions of the substrate between the beads such that a plurality of pillars is formed under areas masked by the beads. Selectively etching completely removes at least some of the beads. The pillars that are not covered by beads are etched, thereby leaving some pillars taller than others, with the pillar height pending on the amount of time a pillar was left exposed to etchant by a removed bead.

Abstract: This disclosure provides implementations of multi-gate transistors, structures, devices, apparatus, systems, and related processes. In one aspect, a device includes a thin-film semiconducting layer arranged over a substrate. A drain and source are coupled to the semiconducting layer. The device also includes first, second and third gates all arranged adjacent the semiconducting layer and configured to receive first, second, and third control signals, respectively. Dielectric layers insulate the gates from the semiconducting layer and from one another. In a first mode, the first, second, and third gates are configured such that charge is stored in a potential well in a region of the semiconducting layer adjacent the second gate. In a second mode, the first, second and third gate electrodes are configured such that the stored charge is transferred through the region of the semiconducting layer adjacent the third gate electrode and through the source to a load.