Abstract: Embodiments of the present invention are directed toward cleaning semiconductor substrates by dividing a processing chamber into a high-pressure compartment and a low-pressure compartment using a baffle. The baffle may include a pattern of nozzles that provide a flow path between the high pressure compartment and the low pressure compartment and that maintain the two compartments at substantially different pressures. A ratable substrate support is positioned within the low pressure compartment, and an inlet port injects a cleaning mist and a carrier gas into the high pressure compartment. The pressure differential between the two compartments accelerates the droplets from the cleaning mist through the nozzles of the baffle into the low pressure compartment toward the substrate, where a portion of the cleaning mist impacts on the surface of the substrate to form a liquid film or to eject elements of the surface film on the wafer.

Abstract: Plasma systems and methods for supplying activation energy to remove cross-linked photoresist crust using ion bombardment of the substrate from a plasma, at reduced temperature, achieved in part by operating the processing chamber at low pressures. Reduced temperatures prevent “popping” of the photoresist which can cause particulate contamination. The gas flow may comprise a principal gas, an inert diluent gas, and an additive gas. Principal gases for HDIS may comprise oxygen, hydrogen, and water vapor at pressures less than about 200 mTorr and a bias may be applied to the substrate support. When low-k dielectric material is present on vertical surfaces, reduced ion bombardment on vertical surfaces may be used, and a protective layer may be deposited on those surfaces.

Abstract: A process material crust, such an ion-implanted photoresist, is removed from a treatment object. A halogen-free plasma is generated using a hydrocarbon gas in combination with oxygen gas to subject the crust to the plasma. Methane may be used as the hydrocarbon gas. This plasma may also be use to remove underlying unaltered photoresist and ion implantation related residues. The plasma may likewise be generated using a hydrogen containing gas, which may be pure hydrogen gas, in combination with oxygen gas. Several techniques are used which employ exposure of the treatment to a hydrogen/oxygen based plasma with subsequent exposure to a hydrocarbon/oxygen based plasma.

Abstract: Inductively-coupled plasma reactors for anisotropic and isotropic etching of a substrate, as well as chemical vapor deposition of a material onto a substrate. The reactor system comprises a processing chamber with a plasma shaping member contained therein. In one embodiment, the plasma shaping member extends from a portion of the top wall of the processing chamber, downward into the chamber, and it is generally positioned above the center of the substrate. The shaping member may be a separate piece of hardware attached to the top wall of the chamber, or it may be an integral part of the wall itself. Preferably, the plasma shaping member has a recessed portion in the middle and an extended portion located at a distance outside that of the recessed region. The plasma shaping member may be fabricated from virtually any material since it is at an electrically floating potential during processing of the substrate.

Abstract: Electrostatic clamp structure having a pedestal in which the normal hard insulator surface facing the wafer for a conventional electrostatic clamp is replaced by resilient layer(s) adjacent to the wafer. In this structure the layer(s) adjacent to the wafer permit the “bumps” on the facing wafer surface to “sink into” the resilient layer of the chuck so that a substantial part of the bumpy wafer surface is in good thermal contact with the resilient layers. Such resilient layers are bonded to an underlying metal pedestal. These layers are adequate conductors of heat and are in good thermal contact with an underlying pedestal structure which may be actively cooled by conventional means.

Abstract: Inductively-coupled plasma reactors for anisotropic and isotropic etching of a substrate, as well as chemical vapor deposition of a material onto a substrate. The reactor system comprises a processing chamber with a plasma shaping member contained therein. In one embodiment, the plasma shaping member extends from a portion of the top wall of the processing chamber, downward into the chamber, and it is generally positioned above the center of the substrate. The shaping member may be a separate piece of hardware attached to the top wall of the chamber, or it may be an integral part the wall itself. Preferably, the plasma shaping member has a recessed portion in the middle and an extended portion located at a distance outside that of the recessed region. The plasma shaping member may be fabricated from virtually any material since it is at an electrically floating potential during processing of the substrate.

Abstract: Pneumatically operated throttle valve which provides both positive shutoff and precise flow control. The valve has a seat surrounding an orifice and a poppet movable between open and closed positions relative to the seat for controlling communication though the orifice. The poppet is urged toward one of the two positions by a spring, and the force for moving the poppet toward the other position is provided by a frictionless bellows. The poppet is provided with a needle valve for precise control of flow through the orifice, and internal heaters are provided for heating the poppet and the seat directly to prevent condensation from forming on them. The bellows in combination with a low friction bearing effectively eliminates stiction and permits precise control of the valve over its entire operating range. In one disclosed embodiment, the bellows serves as the spring which urges the poppet toward one of the two positions as well as an actuator which moves it toward the other position.

Abstract: Nail polishing method and product in which a masking material is applied to the skin or tissue surrounding a nail, and any portions of the material on the nail are removed to form a sharp line of demarcation between the nail and the surrounding skin or tissue. A nail polishing lacquer is applied to the nail and to portions of the masking material adjacent to the nail, After the lacquer has dried, a solvent is rubbed onto the masking material to break off and dissolve the material and thereby remove that material and any lacquer on it from the skin or tissue around the nail. In one disclosed embodiment, the masking material comprises a mixture of liquid detergent, toothpaste, a coloring agent, and water.

Abstract: Metering valve assembly having a poppet movable relative to a valve seat for controlling communication through an orifice. The poppet is urged toward the valve seat with a closing force, and the poppet can be adjusted gradually to provide a fine adjustment of the communication through the orifice. An actuator is operably connected to the poppet to overcome the closing force and move the poppet rapidly to a preset position. When the actuator is not actuated the closing force urges the poppet toward the valve seat to provide a positive shut-off.

Abstract: System and method for monitoring gas pressure in semiconductor processing equipment and the like. A small backflow of an inert gas is passed through the monitoring system to isolate the system from corrosive gases in a chamber to which the system is connected. The backflow passes through a flow restrictor of known resistance between a pressure sensor and the chamber, and the drop in pressure across the restrictor is determined and combined with the pressure measured by the sensor to determine the pressure in the chamber.

Abstract: System and method for producing halftone images, which are particularly suitable for use in desk top publishing. An image of an object is displayed on a video display screen, and a picture of the screen is taken with a halftone camera to make a photographic halftone image of the image displayed on the screen. With a color monitor, the color guns are actuated one at a time to display successive monochromatic images of the component colors, and halftone photographs of these images are taken and superimposed to form the halftone image.

Abstract: Process and apparatus employing flame ashing for stripping photoresist from a substrate in the manufacture of a semiconductor device. The substrate is exposed to the flame with the photoresist to be removed being contacted directly by the flame to oxidize, or ash, the photoresist. The flame is produced by burning oxygen and a gaseous fuel, and the rate of ashing is increased by preheating the substrate. Nitrogen, a nitrogen-containing gas or an inert gas is added to the fuel to provide a cooler flame and an improved ashing rate. In one disclosed embodiment, the oxygen and the gaseous fuel are discharged through a plurality of spaced apart openings in a burner and the substrate is moved relative to the flames to successively ash different portions of the photoresist.

Abstract: System and method for detecting problems and other conditions in a semiconducting processing reactor. The relative amounts of two or more substances are monitored, and an output signal is provided when the relative amounts change in a manner corresponding to the change or condition to be detected. In one disclosed embodiment, the substances are ionized to produce excited molecules of the substances, and the substances are sensed with photosensors which are responsive to light of wavelengths characteristic of the substances.

Abstract: Process and apparatus employing flame ashing for stripping photoresist from a substrate in the manufacture of a semiconductor device. The substrate is exposed to the flame with the photoresist to be removed being contacted directly by the flame to oxidize, or ash, the photoresist. The flame is produced by burning oxygen and a gaseous fuel, and the rate of ashing is increased by preheating the substrate. Nitrogen, a nitrogen-containing gas or an inert gas is added to the fuel to provide a cooler flame and an improved ashing rate. In one disclosed embodiment, the oxygen and the gaseous fuel are discharged through a plurality of spaced apart openings in a burner and the substrate is moved relative to the frames to successively ash different portions of the photoresist.

Abstract: Automated article processing, particularly semiconductor wafer processing, is accomplished in a modular article processing machine. The design of the machine allows easy reconfiguration between single and multiple processing station systems. Articles are handled according to a method which easily accommodates the various configurations of the machine and which provides efficient throughput. The machine includes a number of electromechanical and pneumatic systems under the control of at least one microprocessor. Machine state knowledge necessary for startup in the midst of operation, such as following a power interruption, is provided by a mechanical counter indexed at the completion of each stage of operation by the microprocessor controller.

Abstract: A multi-wafer load lock apparatus for use in wafer processing machines provides access to wafers in an internal cassette by orthogonal wafer transport devices. A passthrough cassette comprising inwardly extending arms having a stepped portion thereon for holding a wafer enables access from orthogonal directions. An improved vacuum feedthrough actuates the cassette.

Abstract: A multi-wafer load lock apparatus for use in wafer processing machines provides access to wafers in an internal cassette by orthogonal wafer transport devices. Upper and lower bell jars, which seal to a sealing plate, provide access to the cassette by outside and vacuum transport mechanisms, respectively. A right angle passthrough cassette allows orthogonal access. An improved vacuum feedthrough actuates both the upper bell jar and the internal cassette.

Abstract: A process is disclosed for use in the manufacture of multilayer thin film integrated circuits for selective removal of specific layers, and a composition of matter useful in the process for selective etching of polysilicon and silicon nitrides during the manufacture of thin film integrated circuits. A multi-layer thin film integrated circuit is exposed to a plasma formed from a gaseous mixture of nitrous oxide and a fluoro compound. The nitrous oxide preferably comprises between 2.5% and 9.0% of the mixture and the fluoro compound preferably comprises between 91.0% and 97.5% of the mixture.

Abstract: A valve (16) for use in a vacuum load lock for semiconductor processing equipment. The valve includes a base having a horizontal passage (34) formed through it for the transfer of semiconductor wafers (12) and a vertically moving valve element (50) received in a second passage (36) intersecting the first. The valve element includes a sealing element (62) which seals partly on a horizontal wall of the first passage and partly on a wall of the second passage, and is actuated by an air piston (56). A seal is effected between the pressurized and evacuated areas of the valve by means of a flexible diaphragm attached to the piston rod (48) and to the valve body (20, 22).

Abstract: A system for supporting wafers (18) on a gas cushion within the vacuum chamber (12) of a plasma etcher (10). An etchant gas is introduced into the vacuum chamber, and a second gas at a volume flow rate much lower than the volume flow rate of the etchant gas is directed to orifices formed in a wafer-receiving surface of an electrode (16) to define the gas cushion. In accordance with one aspect of the invention, the second gas is an inert gas, and in accordance with another aspect of the invention, the second gas is a reactant gas which is also directed into the vacuum chamber to serve as a reactant gas in conjunction with the first reactant gas.