Patents by Inventor John Zajac

John Zajac has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma etching electrode
    Patent number: 4342901
    Abstract: A planar plasma etcher (10) wherein a plurality of projections (36, 136, 236) extend from one electrode (18), with each projection aligned with a wafer (22) placed on the second electrode (20) to provide uniform etching across the surface of each wafer. The surface of the projection facing the wafer can take several forms depending on etching conditions, including convex, concave or frusto-conical.
    Type: Grant
    Filed: August 11, 1980
    Date of Patent: August 3, 1982
    Assignee: Eaton Corporation
    Inventor: John Zajac
  • Plasma etching apparatus II-conical-shaped projection
    Patent number: 4307283
    Abstract: An improved radial flow parallel plate plasma etcher, whose more uniform etching rate of wafers is due to radially decreasing the spacing between the electrodes wherein the gap between the electrodes is greatest at the circumference and smallest at center of the electrodes.
    Type: Grant
    Filed: September 27, 1979
    Date of Patent: December 22, 1981
    Assignee: Eaton Corporation
    Inventor: John Zajac
  • Plasma etching process
    Patent number: 4255230
    Abstract: In an improved process for the etching of polysilicon substrates, a polysilicon substrate is exposed to plasmas of carbon tetrachloride, chlorinated gas, fluorinated gas or a gas capable of generating both chlorinated and fluorinated plasma species. The combination of a chlorinated and fluorinated etching species substantially reduces undercutting of polysilicon substrates. Improved uniformity of polysilicon etching is also achieved.
    Type: Grant
    Filed: February 22, 1980
    Date of Patent: March 10, 1981
    Assignee: Eaton Corporation
    Inventor: John Zajac
  • Plasma etching apparatus
    Patent number: 4230515
    Abstract: An improvement in radial flow parallel plate plasma etchers has been developed in order to improve the uniformity of etching across the entire radial plate dimension. The improvement comprises radially decreasing the spacing between the electrodes wherein the gap between the electrodes is greatest at the center and smallest at the circumference of the electrodes.
    Type: Grant
    Filed: July 27, 1978
    Date of Patent: October 28, 1980
    Assignee: Davis & Wilder, Inc.
    Inventor: John Zajac
  • Process of etching with plasma etch gas
    Patent number: 4182646
    Abstract: A method of etching aluminum in a planar plasma etcher is disclosed wherein a first plasma of carbon tetrachloride is developed followed by a second plasma of carbon tetrachloride and chlorine. By generating the specific claimed plasmas at specific partial pressures in two steps, the selectivity of the etching operation is greatly enhanced while disadvantages encountered in etching aluminum with prior art techniques are greatly reduced.
    Type: Grant
    Filed: July 27, 1978
    Date of Patent: January 8, 1980
    Inventor: John Zajac