Abstract: An imaging device including a semiconductor substrate having a first surface, the semiconductor substrate including: a first layer containing an impurity of a first conductivity type; a second layer containing an impurity of a second conductivity type different from the first conductivity type, the second layer being closer to the first surface than the first layer is; and a pixel. The pixel includes a photoelectric converter configured to convert light into charge; and a first diffusion region containing an impurity of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge. The first layer having a second surface adjacent to the second layer, the second surface including a convex portion toward the first surface, and the convex portion facing the first diffusion region.

Abstract: An imaging device including: a photoelectric converter that generates a signal charge by photoelectric conversion of light; a semiconductor substrate; a charge accumulation region that is an impurity region of a first conductivity type in the semiconductor substrate, the charge accumulation region being configured to receive the signal charge; a first transistor that includes, as a source or a drain, a first impurity region of the first conductivity type in the semiconductor substrate; and a blocking structure that is located between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of a second conductivity type in the semiconductor substrate, the second conductivity type being different from the first conductivity type, and a first electrode that is located above the semiconductor substrate, the first electrode being configured to be applied with a first voltage.

Abstract: An imaging device including: a pixel including a photoelectric converter including a pixel electrode, a counter electrode, and a photoelectric conversion film, the photoelectric conversion film converting light into a charge; a first transistor having a first source, a first drain, a first gate insulating film, and a first gate, one of the first source and the first drain being connected to the pixel electrode; and a second transistor having a second source, a second drain, a second gate insulating film, and a second gate, one of the second source and the second drain being connected to the other of the first source and the first drain without transistor intervention. An effective thickness of the second gate insulting film is smaller than an effective thickness of the first gate insulting film, and the imaging device includes pixels including the pixel, the pixels each including the first and second transistor.

Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.

Abstract: An imaging device according to the present disclosure includes: a photoelectric converter generating signal charge; a semiconductor substrate including a first semiconductor layer on a surface; a charge accumulation region of a first conductivity type in the first semiconductor layer; a first transistor including, as a source or a drain, a first impurity region of the first conductivity type in the first semiconductor layer; and a blocking structure between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of a second conductivity type in the first semiconductor layer, between the charge accumulation region and the first impurity region, and a first electrode above the first semiconductor layer, overlapping at least part of the second impurity region in plan view, the first electrode being configured to be applied with a constant voltage in a period when the charge accumulation region accumulates the signal charge.

Abstract: An imaging device includes: a pixel including a photoelectric converter including a pixel electrode, a counter electrode, and a photoelectric conversion fila converting light into a charge, an amplification transistor a first gate of which is connected to the pixel electrode, a reset transistor one of second source and drain of which is connected to the pixel electrode, and a feedback transistor one of third source and drain of which is connected to the other of the second source and drain; and a first voltage supply circuit supplying a first voltage to the counter electrode. The reset transistor has such a characteristic that when a voltage equal to or higher than a clipping voltage is supplied between the second gate and the one of the second source and drain, the reset transistor is turned off. The clipping voltage is lower than the first voltage.

Abstract: An imaging device including a semiconductor substrate; a photoelectric converter stacked on the semiconductor substrate, the photoelectric converter being configured to generate a signal through photoelectric conversion of incident light; a multilayer wiring structure located between the semiconductor substrate and the photoelectric converter; and circuitry located in the multilayer wiring structure and the semiconductor substrate, the circuitry being configured to detect the signal. The the circuitry includes a first capacitance element and a second capacitance element; and a first transistor including a first source and a first drain in the semiconductor substrate and a first gate.

Abstract: An imaging device including a semiconductor substrate having a first surface, the semiconductor substrate including: a first layer containing an impurity of a first conductivity type; a second layer containing an impurity of a second conductivity type different from the first conductivity type, the second layer being closer to the first surface than the first layer is; and a pixel. The pixel includes a photoelectric converter configured to convert light into charge; and a first diffusion region containing an impurity of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge. The first layer having a second surface adjacent to the second layer, the second surface including a convex portion toward the first surface, and the convex portion facing the first diffusion region.

Abstract: An imaging device includes a semiconductor substrate including a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that accumulates at least a part of the charges flowing from the first diffusion region, a first transistor that includes a first gate electrode and that includes the second diffusion region as one of a source and a drain, a contact plug electrically connected to the second diffusion region, a capacitive element one end of which is electrically connected to the contact plug, and a second transistor that includes a second gate electrode, the second gate electrode being electrically connected to the one end of the capacitive element.

Abstract: An imaging device includes a photoelectric converter that includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, a first transistor that has a gate connected to the first electrode, and a first capacitor and a switching element that are connected, in series, between the first electrode and either a voltage source or a ground.

Abstract: An imaging device including a semiconductor substrate; and a pixel. The pixel includes a photoelectric converter having a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the photoelectric converter located above a surface of the semiconductor substrate; a first transistor that includes a part of the semiconductor substrate and detects electric charges; and a second transistor that includes a gate electrode and initializes a voltage of the first electrode. The first electrode, the second transistor, and the first transistor are arranged in that order toward the semiconductor substrate from the first electrode in cross sectional view, and when viewed from the direction normal to the surface of the semiconductor substrate, a part of the gate electrode overlaps the first electrode, and another part of the gate electrode does not overlap the first electrode.

Abstract: An imaging device includes a semiconductor substrate having a surface, the semiconductor substrate including: a first layer of a first conductivity type; a second layer of a second conductivity type, the second layer being closer to the surface; and a pixel including: a photoelectric converter configured to convert light into charge; a first diffusion region of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge; and a second diffusion region being a diffusion region closest to the first diffusion region among diffusion regions of the first conductivity type, the diffusion regions facing the first layer via the second layer. A distance between the second diffusion region and the first layer is equal to or less than 1.5 times a distance between the second diffusion region and the first diffusion region.

Abstract: An imaging device including: a photoelectric converter that generates a signal charge by photoelectric conversion of light; a semiconductor substrate that includes a first semiconductor layer containing an impurity of a first conductivity type and an impurity of a second conductivity type different from the first conductivity type; and a first transistor that includes, as a source or a drain, a first impurity region of the second conductivity type in the first semiconductor layer. The first semiconductor layer includes: a charge accumulation region that is an impurity region of the second conductivity type, the charge accumulation region being configured to accumulate the signal charge; and a blocking structure that is located between the charge accumulation region and the first transistor, and the blocking structure includes a second impurity region of the second conductivity type.

Abstract: An imaging device according to the present disclosure includes: a photoelectric converter that generates signal charge; a semiconductor substrate including a first semiconductor layer containing an impurity of a first conductivity type and an impurity of a second conductivity type; and a first transistor including a first impurity region of the second conductivity type in the first semiconductor layer. The first semiconductor layer includes: a charge accumulation region of the second conductivity type, for accumulating the signal charge; and a blocking structure between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of the first conductivity type, a third impurity region of the second conductivity type, and a fourth impurity region of the first conductivity type, which are arranged in that order in a direction from the first impurity region toward the charge accumulation region, at the surface of the first semiconductor layer.

Abstract: An imaging device includes: a pixel that includes a semiconductor substrate including a first diffusion region containing a first impurity of a first conductivity type, and a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region, an area of the first diffusion region being less than an area of the second diffusion region in a plan view, a photoelectric converter configured to convert light into charges, and a first transistor including a source and a drain, the first diffusion region functioning as one of the source and the drain, the second diffusion region functioning as the other of the source and the drain, the first diffusion region being configured to store at least a part of the charges.

Abstract: An imaging device includes: a semiconductor layer including a first region of a first conductivity, a second region of a second conductivity opposite to the first conductivity, and a third region of the second conductivity; a photoelectric converter electrically connected to the first region and converting light into charge; a first transistor including a first source, a first drain, and a first gate above the second region, the first region corresponding to the first source or drain; and a second transistor including a second source, a second drain, and a second gate of the second conductivity above the third region, the first region corresponding to the second source or drain, and the second gate being electrically connected to the first region. The concentration of an impurity of the second conductivity in the third region is higher than that of an impurity of the second conductivity in the second region.

Abstract: An imaging device including a semiconductor substrate having a surface, the semiconductor substrate including a first region of a first conductivity type and a pixel. The pixel includes a photoelectric converter; a first transistor including a second region of a second conductivity type different from the first conductivity type as a source or a drain and a first electrode as a gate, the second region being located in the semiconductor substrate and being adjacent to the first region, the first electrode being located above the surface; a contact plug coupled to the second region; and a second electrode located above the surface; wherein when seen in a direction perpendicular to the surface, a contact point between the contact plug and the second region is located between the first electrode and the second electrode.

Abstract: An imaging device according to the present disclosure includes: a photoelectric converter that generates signal charge; a semiconductor substrate including a first semiconductor layer containing an impurity of a first conductivity type and an impurity of a second conductivity type; and a first transistor including a first impurity region of the second conductivity type in the first semiconductor layer. The first semiconductor layer includes: a charge accumulation region of the second conductivity type, for accumulating the signal charge; and a blocking structure between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of the first conductivity type, a third impurity region of the second conductivity type, and a fourth impurity region of the first conductivity type, which are arranged in that order in a direction from the first impurity region toward the charge accumulation region, at the surface of the first semiconductor layer.

Abstract: An imaging device according to the present disclosure includes: a photoelectric converter generating signal charge; a semiconductor substrate including a first semiconductor layer on a surface; a charge accumulation region of a first conductivity type in the first semiconductor layer; a first transistor including, as a source or a drain, a first impurity region of the first conductivity type in the first semiconductor layer; and a blocking structure between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of a second conductivity type in the first semiconductor layer, between the charge accumulation region and the first impurity region, and a first electrode above the first semiconductor layer, overlapping at least part of the second impurity region in plan view, the first electrode being configured to be applied with a constant voltage in a period when the charge accumulation region accumulates the signal charge.

Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.