Abstract: An HEMT includes a first III-V compound layer, a second III-V compound layer, and a III-V compound cap layer. The second III-V compound layer is disposed on the first III-V compound layer. The III-V compound cap layer covers and contacts the second III-V compound layer. The composition of the III-V compound cap layer and the second III-V compound layer are different from each other. A first opening is disposed in the III-V compound cap layer. A first insulating layer includes two first insulating parts and two second insulating parts. The two first insulating parts cover a top surface of the III-V compound cap layer, and the two second insulating parts respectively contact two sidewalls of the first opening. A second opening is disposed between the two first insulating parts and between the two second insulating parts. A gate electrode is disposed in the second opening.

Abstract: The present disclosure relates to the technical field of automobile part processing, and specifically provides a spray head device and a sandblasting device for automobile part processing. The spray head device comprises a spray head body and a connecting pipe. A conical through hole is penetratingly arranged in the spray head body, one end of the conical through hole forms a discharge port, the other end of the conical through hole forms a feed port, the caliber of the feed port is greater than that of the discharge port, the connecting pipe is fixedly connected to one end of the feed port of the spray head body, and the connecting pipe is coaxially arranged with the conical through hole; the conical through hole is penetratingly provided in the spray head body.

Abstract: A high electron mobility transistor (HEMT) device and a method of forming the HEMT device are provided. The HEMT device includes a substrate, a channel layer, a barrier layer, and a gate structure. The substrate has at least one active region. The channel layer is disposed on the at least one active region. The barrier layer is disposed on the channel layer. The gate structure is disposed on the barrier layer. The gate structure includes a metal layer and a P-type group III-V semiconductor layer vertically disposed between the metal layer and the barrier layer. The P-type group III-V semiconductor layer includes a lower portion and an upper portion on the lower portion, and the upper portion has a top area greater than a top area of the lower portion.

Abstract: A probe pin cleaning pad including a release layer or composite plate, an adhesive layer, a substrate layer, a cleaning layer, and a polishing layer is provided. The adhesive layer is disposed on the release layer or composite plate. The substrate layer is disposed on the adhesive layer. The cleaning layer is disposed on the substrate layer. The polishing layer is disposed on the cleaning layer. A cleaning method for a probe pin is also provided.

Abstract: The present disclosure provides a method and electronic apparatus for modifying pages of an electronic document, and the method is performed by the electronic apparatus and comprises the following steps: opening a first user operation interface; detecting whether a first input region is selected; when it is detected that the first input region is selected, displaying a plurality of first pages of a first electronic document on a page preview region and determining a first page change position located in the plurality of first pages according to a first operation event; detecting whether a second input region is selected; when it is detected that the second input region is selected, displaying a plurality of second pages of a second electronic document on the page preview region and determining at least one second page of the plurality of second pages according to a second operation event; and adding the at least one second page to the first page change position according to a third operation event.

Abstract: This disclosure provides a method and a user apparatus for generating and applying a translation marker, and the method is performed by the user apparatus and comprises: opening an electronic document on a user operation interface; selecting at least one text string in the electronic document according to a first triggering event; and when a translation option is detected to be selected, performing the following steps: generating a code corresponding to the selected text string by using an operation function; and displaying a first translated text string of the first translation record on the user operation interface and generating a first translation marker associated with the first translated text string on the electronic document when it is determined that a first translation record associated with the code exists in the user apparatus.

Abstract: A method and device for smoke or fire recognition, a computer device and a storage medium are disclosed. The method includes: acquiring a to-be-recognized image in a smoke or fire monitoring region; recognizing a smoke or fire suspected region in the to-be-recognized image according to the to-be-recognized image, including recognizing a smoke or fire suspected region in a visible light image on the basis of colors, and recognizing a smoke or fire suspected region in an infrared image on the basis of brightness; and inputting the to-be-recognized image including the smoke or fire suspected region into a preset model, and recognizing a smoke or fire state in the to-be-recognized image according to an output result of the preset model, the preset model being obtained by training based on the visible light image pre-marked with a smoke or fire state or the infrared image pre-marked with a smoke or fire state.

Abstract: A radar signal device includes an antenna unit, a transmission circuit and a reception circuit. The antenna unit is used to concurrently transmit a transmission signal and receive a reception signal. The antenna unit includes a metal layer, a first feed structure and a second feed structure. An opening is formed on the metal layer. A first projection of the first feed structure on the metal layer at least partially overlaps with the opening. A second projection of the second feed structure on the metal layer at least partially overlaps with the opening. The antenna unit forms a first radiation pattern used to transmit the transmission signal and a second radiation pattern used to receive the reception signal. An angle between a co-polarized electric field direction of the first radiation pattern and a co-polarized electric field direction of the second radiation pattern is between 45 degrees and 135 degrees.

Abstract: In an embodiment, a device includes: first nanostructures; a first undoped semiconductor layer contacting a first dummy region of the first nanostructures; a first spacer on the first undoped semiconductor layer; a first source/drain region on the first spacer, the first source/drain region contacting a first channel region of the first nanostructures; and a first gate structure wrapped around the first channel region and the first dummy region of the first nanostructures.

Abstract: Provided are methods for gridlock prevention, which can include obtaining sensor data, obtaining an intersection parameter, and determining a constraint. Some methods described also include generating trajectories and providing data associated with a selected trajectory, such as for operation of an autonomous vehicle along the trajectory. Systems and computer program products are also provided.

Abstract: Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.

Abstract: A semiconductor memory structure includes a substrate having thereon a transistor forming region and a capacitor forming region. A transistor is disposed on the substrate within the transistor forming region. A capacitor is disposed within the capacitor forming region and electrically coupled to the transistor. A first inter-layer dielectric layer covers the transistor forming region and the capacitor forming region. The first inter-layer dielectric layer surrounds a metal gate of the transistor and a bottom plate of the capacitor. A cap layer is disposed on the first inter-layer dielectric layer. The cap layer has a first thickness within the transistor forming region and a second thickness within the capacitor forming region. The first thickness is greater than the second thickness. The cap layer within the capacitor forming region acts as a capacitor dielectric layer of the capacitor.

Abstract: A device includes a channel layer, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, and a sidewall spacer. The channel layer is over a substrate. The gate structure wraps around the channel layer. The first source/drain epitaxial structure and the second source/drain epitaxial structure are on opposite sides of the channel layer. The sidewall spacer is on a sidewall of the first source/drain epitaxial structure and includes a first dielectric layer and a second dielectric layer over the first dielectric layer and in contact with first source/drain epitaxial structure. The first dielectric layer and the second dielectric layer include different materials.

Abstract: A transceiver includes an antenna configured to transmit a first wireless signal based on a transmission signal and receive a second wireless signal, the second wireless signal including a reflected first wireless signal from an object and the antenna transmitting the first wireless signal and receiving the second wireless signal at the same time. A transmission circuit is configured to generate the transmission signal and output the transmission signal to a first side of the antenna. A reception circuit is configured to receive a reception signal from a second side of the antenna, the antenna outputting the reception signal based on the second wireless signal. The first side is different from the second side.

Abstract: A method for forming a semiconductor device structure is provided. The method includes successively forming a first multi-layer etch stop structure and an insulating layer over a first conductive feature. The insulating layer and the first multi-layer etch stop structure are successively etched to form an opening substantially aligned to the first conductive feature. A second conductive feature is formed in the opening. The formation of the first multi-layer etch stop structure and the second multi-layer etch stop structure includes forming a first metal-containing dielectric layer, forming a silicon-containing dielectric layer over the first metal-containing dielectric layer, and forming a second metal-containing dielectric layer over the silicon-containing dielectric layer. The second metal-containing dielectric layer has a material that is different from the material of the first metal-containing dielectric layer.

Abstract: A high electron mobility transistor (HEMT) device includes a substrate, a channel layer, a source, a drain, a buffer layer, and a plurality of amorphous regions. The channel layer is located above the substrate. The source is located on the channel layer. The drain is located on the channel layer. The buffer layer is located between the substrate and the channel layer. The plurality of amorphous regions are located in the buffer layer below the source and the drain.

Abstract: A defect detecting apparatus and method are provided. The defect detecting apparatus receives an image to be tested. The defect detecting apparatus detects the image to be tested through a defect detecting model to generate an anomaly score corresponding to the image to be tested, and the defect detecting model is generated based on the training of a generative adversarial network and a plurality of normalized loss functions. The defect detecting apparatus compares the anomaly score with an anomaly score threshold to determine whether the image to be tested is a defective image.

Abstract: A card having a fingerprint sensor and a manufacturing method of the same are provided. The fingerprint sensor is disposed between a substrate and a protection layer. The protection layer has a first area and a second area thereon. The roughness of the second area is smaller than the roughness of the first area. The second area corresponds to the sensing area of the fingerprint sensor. When the user's finger is wet, the second area may effectively keep the water from remaining on it. Thus, the water does not affect the effect of fingerprint sensing.

Abstract: A preparation method of a cathode material for a secondary battery is provided. First, a lithium metal phosphate material and a first conductive carbon are provided. The lithium metal phosphate material is made of a plurality of secondary particles. Each of the secondary particles is formed by the aggregation of a plurality of primary particles. An interparticle space is formed between the plurality of primary particles. Next, the lithium metal phosphate material and the first conductive carbon are mixed by a mechanical method, and a composite material is prepared. The first conductive carbon is uniformly arranged in the interparticle space. After that, a second conductive carbon, a binder and a solvent are provided. Finally, the composite material, the second conductive carbon, the binder and the solvent are mixed, and a cathode material for preparing a positive plate is prepared.

Abstract: A torque sensor includes a sleeve member configured to be mounted on a center shaft, and a tubular sensor body arranged coaxially with the sleeve member. At least one outer surface of the sleeve member includes one or more magnetostrictive elements. The tubular sensor body includes a bobbin for mounting a sensor coil. An induced current in the sensor coil is detected in response to pedaling by a user. The tubular sensor body includes one or more inclined surfaces inclined with respect to a radial direction of the torque sensor, the one or more inclined surfaces being coupled with the sleeve member or the center shaft.