Abstract: A device includes a channel layer, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, and a sidewall spacer. The channel layer is over a substrate. The gate structure wraps around the channel layer. The first source/drain epitaxial structure and the second source/drain epitaxial structure are on opposite sides of the channel layer. The sidewall spacer is on a sidewall of the first source/drain epitaxial structure and includes a first dielectric layer and a second dielectric layer over the first dielectric layer and in contact with first source/drain epitaxial structure. The first dielectric layer and the second dielectric layer include different materials.

Abstract: A transceiver includes an antenna configured to transmit a first wireless signal based on a transmission signal and receive a second wireless signal, the second wireless signal including a reflected first wireless signal from an object and the antenna transmitting the first wireless signal and receiving the second wireless signal at the same time. A transmission circuit is configured to generate the transmission signal and output the transmission signal to a first side of the antenna. A reception circuit is configured to receive a reception signal from a second side of the antenna, the antenna outputting the reception signal based on the second wireless signal. The first side is different from the second side.

Abstract: A method for forming a semiconductor device structure is provided. The method includes successively forming a first multi-layer etch stop structure and an insulating layer over a first conductive feature. The insulating layer and the first multi-layer etch stop structure are successively etched to form an opening substantially aligned to the first conductive feature. A second conductive feature is formed in the opening. The formation of the first multi-layer etch stop structure and the second multi-layer etch stop structure includes forming a first metal-containing dielectric layer, forming a silicon-containing dielectric layer over the first metal-containing dielectric layer, and forming a second metal-containing dielectric layer over the silicon-containing dielectric layer. The second metal-containing dielectric layer has a material that is different from the material of the first metal-containing dielectric layer.

Abstract: A high electron mobility transistor (HEMT) device includes a substrate, a channel layer, a source, a drain, a buffer layer, and a plurality of amorphous regions. The channel layer is located above the substrate. The source is located on the channel layer. The drain is located on the channel layer. The buffer layer is located between the substrate and the channel layer. The plurality of amorphous regions are located in the buffer layer below the source and the drain.

Abstract: A defect detecting apparatus and method are provided. The defect detecting apparatus receives an image to be tested. The defect detecting apparatus detects the image to be tested through a defect detecting model to generate an anomaly score corresponding to the image to be tested, and the defect detecting model is generated based on the training of a generative adversarial network and a plurality of normalized loss functions. The defect detecting apparatus compares the anomaly score with an anomaly score threshold to determine whether the image to be tested is a defective image.

Abstract: A card having a fingerprint sensor and a manufacturing method of the same are provided. The fingerprint sensor is disposed between a substrate and a protection layer. The protection layer has a first area and a second area thereon. The roughness of the second area is smaller than the roughness of the first area. The second area corresponds to the sensing area of the fingerprint sensor. When the user's finger is wet, the second area may effectively keep the water from remaining on it. Thus, the water does not affect the effect of fingerprint sensing.

Abstract: A preparation method of a cathode material for a secondary battery is provided. First, a lithium metal phosphate material and a first conductive carbon are provided. The lithium metal phosphate material is made of a plurality of secondary particles. Each of the secondary particles is formed by the aggregation of a plurality of primary particles. An interparticle space is formed between the plurality of primary particles. Next, the lithium metal phosphate material and the first conductive carbon are mixed by a mechanical method, and a composite material is prepared. The first conductive carbon is uniformly arranged in the interparticle space. After that, a second conductive carbon, a binder and a solvent are provided. Finally, the composite material, the second conductive carbon, the binder and the solvent are mixed, and a cathode material for preparing a positive plate is prepared.

Abstract: A torque sensor includes a sleeve member configured to be mounted on a center shaft, and a tubular sensor body arranged coaxially with the sleeve member. At least one outer surface of the sleeve member includes one or more magnetostrictive elements. The tubular sensor body includes a bobbin for mounting a sensor coil. An induced current in the sensor coil is detected in response to pedaling by a user. The tubular sensor body includes one or more inclined surfaces inclined with respect to a radial direction of the torque sensor, the one or more inclined surfaces being coupled with the sleeve member or the center shaft.

Abstract: A process tube device can detect the presence of any external materials that may reside within a fluid flowing in the tube. The process tube device detects the external materials in-situ which obviates the need for a separate inspection device to inspect the surface of a wafer after applying fluid on the surface of the wafer. The process tube device utilizes at least two methods of detecting the presence of external materials. The first is the direct measurement method in which a light detecting sensor is used. The second is the indirect measurement method in which a sensor utilizing the principles of Doppler shift is used. Here, contrary to the first method that at least partially used reflected or refracted light, the second method uses a Doppler shift sensor to detect the presence of the external material by measuring the velocity of the fluid flowing in the tube.

Abstract: Transistor gate isolation structures and methods of forming the same are provided. In an embodiment, a device includes: an isolation region; a first gate structure on the isolation region; a second gate structure on the isolation region; and a gate isolation structure between the first gate structure and the second gate structure in a first cross-section, an upper portion of the gate isolation structure having a first concentration of an element, a lower portion of the gate isolation structure having a second concentration of the element, the first concentration different from the second concentration, the lower portion extending continuously along a sidewall of the first gate structure, beneath the upper portion, and along a sidewall of the second gate structure.

Abstract: A p-GaN high-electron-mobility transistor, includes a substrate, a channel layer stacked on the substrate, a supply layer stacked on the channel layer, a first doped layer stacked on the supply layer, a second doped layer stacked on the first doped layer, and a third doped layer stacked on the second doped layer. A doping concentration of the first doped layer and the doping concentration of the third doped layer are lower than a doping concentration of the second doped layer. A gate is located on the third doped layer, and a source and a drain are electrically connected to the channel layer and the supply layer, respectively.

Abstract: An antenna apparatus is provided. The antenna apparatus includes a cavity element, a radiating element, and a feeding element. The cavity element includes an opening. The radiating element is located within the opening and disposed at a conductive layer. An outline of the radiating element and the opening form a surrounding slot. An imagining rectangle has four sides respectively abutted against an external outline of the surrounding slot. The feeding element is disposed at the same conductive layer. The feeding element includes a first section and a second section. A coupling distance is provided between the first section and the radiating element. A tail end of the first section is an open circuit. A shift distance is provided between the second section and a central line of the imagining rectangle.

Abstract: Embodiments provide a two-tiered trench isolation structure under the epitaxial regions (e.g., epitaxial source/drain regions) of a nano-FET transistor device, and methods of forming the same. The first tier provides an isolation structure with a low k value. The second tier provides an isolation structure with a higher k value, with material greater density, and greater etch resistivity than the first tier isolation structure.

Abstract: Methods of treatment and prevention and assays to select optimal compounds for treating or preventing infections from severe acute respiratory syndrome (SARS)-related coronaviruses (SARS-CoV), such as SARS-CoV-2, that interfere with the activity of the nidovirus RdRp-associated nucleotidyltransferase (NiRAN) domain of non-structural protein 12 (nsp12). The invention establishes for the first time herein the foundational discovery of the mechanism of action of the NiRAN-domain, and how it can be used in pharmaceutical therapy against SARS-CoV infection, including a SARS-CoV-2 infection, or exposure.

Abstract: Some implementations described herein provide techniques and apparatuses for a semiconductor processing tool including an electrostatic chuck having a voltage-regulation system to regulate an electrical potential throughout regions of a semiconductor substrate positioned above the electrostatic chuck. The voltage-regulation system may determine that an electrical potential within a region of the semiconductor substrate does not satisfy a threshold. The voltage-regulation system may, based on determining that the electrical potential throughout the region does not satisfy the threshold, position one or more electrically-conductive pins within the region. While positioned within the region, the one or more electrically-conductive pins may change the electrical potential of the region.

Abstract: A high electron mobility transistor includes a substrate. A channel layer is disposed on the substrate. An active layer is disposed on the channel layer. The active layer includes a P-type aluminum gallium nitride layer. A P-type gallium nitride gate is disposed on the active layer. A source electrode and a drain electrode are disposed on the active layer.

Abstract: Embodiments of the present disclosure provide a method for forming a semiconductor device structure. In one embodiment, the method includes forming a fin structure having first semiconductor layers and second semiconductor layers alternatingly stacked, removing edge portions of the second semiconductor layers to form cavities between adjacent first semiconductor layers, selectively forming a passivation layer on sidewalls of the first semiconductor layers, forming a dielectric spacer on sidewalls of the second semiconductor layers and filling in the cavities, wherein the passivation layer is exposed. The method also includes removing the passivation layer, and forming an epitaxial source/drain feature so that the epitaxial source/drain feature is in contact with the first semiconductor layers and the dielectric spacers.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; removing the hard mask to form a first recess for exposing the barrier layer; removing the hard mask adjacent to the first recess to form a second recess; and forming a p-type semiconductor layer in the first recess and the second recess.

Abstract: A semiconductor structure includes an insulator, a semiconductor fin, a gate stack, a gate contact, a source/drain material, and a source/drain contact structure. The semiconductor fin protrudes from the insulator. The gate stack is disposed on the semiconductor fin and the insulator. The gate contact is disposed on and electrically connected to the gate stack. The source/drain material is disposed on the semiconductor fin. The source/drain contact structure is disposed on and electrically connected to the source/drain material. The semiconductor fin extends along a first direction, the gate stack extends along a second direction different from the first direction. An offset S in the second direction between the gate contact and the source/drain contact structure satisfies: 0<S?(W/2+D/2), wherein W is a width of the semiconductor fin, and D is a dimension of the gate contact.

Abstract: Certain embodiments are directed to a method, system, or apparatus, such as a medical imaging device. The method can include retrieving data from a worksheet or form repository server. The data can include one or more fields of a customized worksheet or form. The one or more fields can be based on at least one of an identification of a user, a location of the medical imaging device, or a medical department using the medical imaging device. The method can also include recreating the customized worksheet or form at the medical imaging device based on the received data, and displaying the recreated customized worksheet or form on a graphical user interface connected to the medical imaging device. In addition, the method can include producing a medical image via the medical imaging device, and automatically forwarding the customized worksheet or form and the medical image to a billable workflow or an educational workflow.