Abstract: A liquid chemical supply system that performs accurate pressure feedback control and controls the discharge flow rate of liquid chemical with high precision, even when the pressure setting value of the operation pressure differs due to changes in the type of liquid chemical, includes a pump having a pump chamber and an operation chamber separated by a diaphragm comprised of a flexible membrane. The intake and discharge of liquid chemical is performed in accordance with the change in pressure inside the operation chamber. An electro-pneumatic regulator supplies operation gas pressure to the operation chamber. A plurality of pressure sensors having different pressure detection ranges is provided for detecting the operation gas pressure. A controller selectively employs any of the detection results of the plurality of sensors in accordance with the pressure setting value of the operation air that is set for each use, and performs pressure feedback control.

Abstract: A high separation efficiency column 10 for chromatography and a manufacturing method thereof are provided. The column 10 for chromatography includes a first substrate 11 having a plurality of pillars 22 formed on one surface thereof and a second substrate 12 bonded to the one surface of the first substrate 11 and constituting a flow path 13 together with the plurality of pillars 22 formed on the first substrate. At least a surface of each pillar is formed in a porous shape.

Abstract: In accordance with an increase in speed, a wiring structure has rapidly become more microscopic and thinner and a wiring layer has become extremely thin, and therefore, giving a contact load to a probe for the inspection as has been conventionally done causes damage to a wiring layer and an insulation layer because the probe penetrates not only the oxide film but also the wiring layer or because of a concentration stress from the probe. On the other hand, decreasing the contact load causes unstable continuity between the probe and an electrode pad. It is an object of the present invention to surely and stably inspect an object to be inspected by breaking an oxide film with a low stylus pressure.

Abstract: By steps of forming first masks 13, 14 each having a first pattern on a first surface of a substrate 11 on which a membrane is to be formed, etching the first surface of the substrate 11 by using the first masks 13, 14 to forming first support beams 15, positioning a second surface of the substrate 11 on the basis of the first pattern on the first surface, forming a second mask 17 having a second pattern on the second surface of the substrate 11 based on the alignment and etching the second surface of the substrate 11 in dry by using the second mask 17 to form the second support beams 20, a membrane member 22a where the first and second support beams 15, 20 are formed on both surfaces of the membrane 12 is manufactured. Consequently, it is possible to provide the membrane member that is sufficient in strength and is hard to be deformed by heat.

Abstract: Because a sample holder 100 is composed of a plurality of convex parts 1 provided on a top face of a base substance 2, and the plurality of convex parts 1 are spherical surfaces 1a formed of a single crystal or amorphous material, frictional wear of the sample at contact parts between a sample 4 and the convex parts 1 is reduced, thereby making it possible to inhibit particle generation. Further, because a joining layer 3 is formed of a single crystal or amorphous material, there is no defect that particles scattered on the sample holder 100 fill up it, which makes it possible to easily keep it in a clean state by cleaning, and it is possible to effectively reduce reattachment of particles to the sample 4.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10?5 q? (mm) given with respect to a surface tension ? (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10?5 (m·sec/N).

Abstract: A substrate holding apparatus includes a base plate with a two-pronged portion, a holding plate arranged above the base plate, a driving portion provided therebetween, a holding portion formed by a tip end of the two-pronged portion and a tip end of the holding plate, and a guide portion provided at the tip end of the two-pronged portion for guiding a part of the substrate. The driving portion includes an urging means for always urging a basal end side of the holding plate upward, an electric magnetic portion for drawing the holding plate toward the base plate, and a bearing portion arranged at on the tip end side of the base plate. The guide portion has a guide groove which comes into contact with a part of a periphery of the substrate.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: A cathode potential is applied to a conductive layer formed on a substrate having a depression pattern. A plating solution in electrical contact with an anode is supplied to the conductive layer to form a plating film on the conductive layer. At this time, the plating solution is supplied by causing an impregnated member containing the plating solution to face the conductive layer. Since the plating solution stays in the depression, a larger amount of plating solution is supplied than on the upper surface of the substrate, and the plating rate of the plating film in the depression increases. Consequently, the plating film can be preferentially formed in the depression such as a groove or hole.

Abstract: An inspecting method which is for a microstructure with a movable portion and executes a highly precise inspection without damaging a probe or an inspection electrode by supressing the effect of a needle pressure in contacting the probe to the inspection electrode is provided. When inspection on a microstructure is performed, first a pair of probes (2) are caused to contact respective electrode pads (PD), and the pair of probes (2) and a fritting power source (50) are connected together through relays (30). Next a voltage is applied from the fritting power source (50) to one probe (2) in the pair of probes (2). As the voltage is gradually increased, an oxide film between the pair of probes (2) is destroyed and a current flows between the pair of probes (2) by fritting phenomenon, and the probes (2) and the electrode pad (PD) are electrically conducted each other.

Abstract: A wiring substrate for mounting electronic parts and a method for manufacturing the same are provided. The wiring substrate includes a substrate that includes a first surface, a second surface and a plurality of through-holes that extend through the substrate from the first surface to the second surface so as to define a plurality of inner walls respectively. The wiring substrate further includes an external conductor that is formed on at least one of the first surface or the second surface of the substrate. A through-hole conductor is formed on one of the plurality of inner walls so as to define a through-hole conductor space and so as to be electrically connected to the external conductor. Also included is a conductive post with first and second post ends, the first post end being positioned in the through-hole conductor space such that the first post end is in contact with and is electrically connected to the through-hole conductor, and the second post end projects out of the conductor space.

Abstract: Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

Abstract: A first wiring layer 16 is disposed on an insulating film 14 on the lower surface of an upper substrate 15, while a second wiring layer 13 three-dimensionally crossing the first wiring layer 16 is provided on the insulating film 12 on a lower substrate 11. A cantilever 17 has one end connected to the first wiring layer 16 and the other end opposed to the second wiring layer 13 with a space therebetween. A thermoplastic sheet 19 is arranged on the upper substrate 15 so as to cover the through-hole 18. The thermoplastic sheet 19 is pressed by a heated pin 20 against the cantilever 17 and deformed so as to maintain the connection between the cantilever 17 and the second wiring layer 13, and therefore close the switch 10.

Abstract: Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device. Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.

Abstract: The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure.

Abstract: Voltage is applied to a chip TP by a voltage drive unit 30 through a probe needle P to move a movable part of a microstructure. A sound produced in response to motion of the movable part of the microstructure is detected by a microphone 3. Then, the sound detected by the microphone 3 is measured by a measurement unit 25. The control unit 20 evaluates the characteristics of the tested chip TP by comparing with a sound detected from an ideal chip TP.

Abstract: A developing apparatus has a substrate holder to hold a substrate, a heater which is provided in a substrate holder, and heats a substrate on a substrate holder for processing a resist film by PEB, a cooler to cool a substrate on a substrate holder, a developing solution nozzle to supply a developing solution to a substrate on a substrate holder, and a controller to control a heater, a cooler and a developing nozzle.

Abstract: A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Abstract: A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.