Abstract: A stacked memory device includes a plurality of lower word lines extending in a first direction, a bit line positioned over the plurality of the lower word lines and extending in a second direction intersecting with the first direction, and a plurality of upper word lines positioned over the bit line and extending in the first direction. The stacked memory device also includes a plurality of lower memory cells including a lower capacitor and a lower switching element between the lower word lines and the bit line. The stacked memory device further includes a plurality of upper memory cells including an upper capacitor and an upper switching element between the bit line and the upper word lines.

Abstract: A stacked memory device includes a plurality of lower word lines extending in a first direction, a bit line positioned over the plurality of the lower word lines and extending in a second direction intersecting with the first direction, and a plurality of upper word lines positioned over the bit line and extending in the first direction. The stacked memory device also includes a plurality of lower memory cells including a lower capacitor and a lower switching element between the lower word lines and the bit line. The stacked memory device further includes a plurality of upper memory cells including an upper capacitor and an upper switching element between the bit line and the upper word lines.

Abstract: A stacked memory device includes a plurality of lower word lines extending in a first direction, a bit line positioned over the plurality of the lower word lines and extending in a second direction intersecting with the first direction, and a plurality of upper word lines positioned over the bit line and extending in the first direction. The stacked memory device also includes a plurality of lower memory cells including a lower capacitor and a lower switching element between the lower word lines and the bit line. The stacked memory device further includes a plurality of upper memory cells including an upper capacitor and an upper switching element between the bit line and the upper word lines.

Abstract: A stacked memory device includes a plurality of lower word lines extending in a first direction, a bit line positioned over the plurality of the lower word lines and extending in a second direction intersecting with the first direction, and a plurality of upper word lines positioned over the bit line and extending in the first direction. The stacked memory device also includes a plurality of lower memory cells including a lower capacitor and a lower switching element between the lower word lines and the bit line. The stacked memory device further includes a plurality of upper memory cells including an upper capacitor and an upper switching element between the bit line and the upper word lines.

Abstract: A semiconductor memory apparatus may be provided. The semiconductor memory apparatus may include a row decoder configured to generate one or more row decoding signals based on a plurality of row addresses. The semiconductor memory apparatus may include a column decoder configured to generate one or more column decoding signals based on a plurality of column addresses.

Abstract: A resistive memory apparatus may include a memory cell array and a selective write circuit. The memory cell array may include a plurality of resistive memory cells coupled between a plurality of word lines and a plurality of bit lines. The selective write circuit may determine whether or not to perform a pre-read/comparison operation for a memory cell on which a next write operation is scheduled to be performed, based on a logic level of input data provided for a write operation. The selective write circuit may control the write operation for the memory cell array according to a determination result of the pre-read/comparison operation.

Abstract: A resistive memory apparatus may include a memory cell array and a selective write circuit. The memory cell array may include a plurality of resistive memory cells coupled between a plurality of word lines and a plurality of bit lines. The selective write circuit may determine whether or not to perform a pre-read/comparison operation for a memory cell on which a next write operation is scheduled to be performed, based on a logic level of input data provided for a write operation. The selective write circuit may control the write operation for the memory cell array according to a determination result of the pre-read/comparison operation.

Abstract: A semiconductor memory apparatus may be provided. The semiconductor memory apparatus may include a row decoder configured to generate one or more row decoding signals based on a plurality of row addresses. The semiconductor memory apparatus may include a column decoder configured to generate one or more column decoding signals based on a plurality of column addresses.

Abstract: A voltage generation apparatus may include an external voltage sensing circuit configured to generate a first start signal and a second start signal by sensing the magnitude of a first external voltage and the magnitude of a second external voltage. The voltage generation apparatus may include an internal voltage sensing circuit configured to generate a voltage generation signal by comparing an internal voltage with a target voltage. The voltage generation apparatus may include a voltage pumping circuit configured to be activated in response to the first start signal, configured to perform a pumping operation based on the voltage generation signal, and configured to generate the internal voltage. The voltage generation apparatus may include a voltage regulating circuit configured to be activated in response to the first and second start signals, and configured to generate the internal voltage based on the voltage generation signal.

Abstract: A voltage generation apparatus may include an external voltage sensing circuit configured to generate a first start signal and a second start signal by sensing the magnitude of a first external voltage and the magnitude of a second external voltage. The voltage generation apparatus may include an internal voltage sensing circuit configured to generate a voltage generation signal by comparing an internal voltage with a target voltage. The voltage generation apparatus may include a voltage pumping circuit configured to be activated in response to the first start signal, configured to perform a pumping operation based on the voltage generation signal, and configured to generate the internal voltage. The voltage generation apparatus may include a voltage regulating circuit configured to be activated in response to the first and second start signals, and configured to generate the internal voltage based on the voltage generation signal.

Abstract: A semiconductor memory device comprising a memory cell array with a plurality of word lines, first and second dummy word lines, and a dummy word line driver suitable for separately driving the first and second dummy word lines for a wafer burn-in test where the word lines are driven by group.

Abstract: A semiconductor memory device comprising a memory cell array with a plurality of word lines, first and second dummy word lines, and a dummy word line driver suitable for separately driving the first and second dummy word lines for a wafer burn-in test where the word lines are driven by group.

Abstract: The semiconductor apparatus includes a reference delay value check unit configured to receive a source signal and delay the source signal to generate a reference delay signal; a process delay value check unit configured to receive the source signal and delay the source signal to generate a process delay signal; and a signal generation unit configured to receive the reference delay signal and the process delay signal, receive an input signal, and variably delay the input signal based on the reference delay signal and the process delay signal to generate an output signal.

Abstract: A semiconductor apparatus with an open bit line structure includes a memory bank including a plurality of memory cell blocks and dummy mats, in which a plurality of bit lines are formed, a bit line sense amplifier configured to be arranged between the plurality of memory cell blocks and the dummy mats, compare a voltage difference between a bit line and a complementary bit line, and amplify the difference, and a dummy word line driving unit configured to selectively activate a dummy word line of the dummy mat in response to a test mode.

Abstract: A semiconductor apparatus includes a chip containing a plurality of through-vias, a test voltage input unit, and a test result reception unit. The test voltage input unit applies a test voltage to one of the plurality of through-vias. The test result reception unit receives an output signal outputted from one or more of the plurality of through-vias.

Abstract: The semiconductor apparatus includes a reference delay value check unit configured to receive a source signal and delay the source signal to generate a reference delay signal; a process delay value check unit configured to receive the source signal and delay the source signal to generate a process delay signal; and a signal generation unit configured to receive the reference delay signal and the process delay signal, receive an input signal, and variably delay the input signal based on the reference delay signal and the process delay signal to generate an output signal.

Abstract: The semiconductor apparatus includes a reference delay value check unit configured to receive a source signal and delay the source signal to generate a reference delay signal; a process delay value check unit configured to receive the source signal and delay the source signal to generate a process delay signal; and a signal generation unit configured to receive the reference delay signal and the process delay signal, receive an input signal, and variably delay the input signal based on the reference delay signal and the process delay signal to generate an output signal.

Abstract: A semiconductor memory device includes a clock synchronizing unit for receiving a first power voltage through a first power voltage terminal, and an additional power voltage providing unit for additionally providing a second power voltage to the first power voltage terminal for a predetermined period after leaving a power down mode.

Abstract: A semiconductor apparatus with an open bit line structure includes a memory bank including a plurality of memory cell blocks and dummy mats, in which a plurality of bit lines are formed, a bit line sense amplifier configured to be arranged between the plurality of memory cell blocks and the dummy mats, compare a voltage difference between a bit line and a complementary bit line, and amplify the difference, and a dummy word line driving unit configured to selectively activate a dummy word line of the dummy mat in response to a test mode.

Abstract: The semiconductor apparatus includes a reference delay value check unit configured to receive a source signal and delay the source signal to generate a reference delay signal; a process delay value check unit configured to receive the source signal and delay the source signal to generate a process delay signal; and a signal generation unit configured to receive the reference delay signal and the process delay signal, receive an input signal, and variably delay the input signal based on the reference delay signal and the process delay signal to generate an output signal.