Abstract: The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.

Abstract: A machine-tool-state determination system configured to determine a state associated with a machine tool including a rotation mechanism for processing a member, the system including: a sensor configured to acquire a state value from the machine tool; and an analysis device, in which the analysis device: performs spectral analysis with time series data of the state value, to extract a rotational frequency of the rotation mechanism and a harmonic wave to the rotational frequency; calculates a ratio of an amplitude of the rotational frequency to an amplitude of the harmonic wave; generates feature-amount data including the state value and the ratio as feature amounts; performs clustering with the feature-amount data; and determines a state associated with the machine tool, based on a result of the clustering.

Abstract: A sensor system that detects a vibration of a rotating part with a high accuracy even in a case in which a sensor is additionally attached is provided. The invention is directed to a sensor system includes a board that is installed in a rotating part of a cut processing machine; a plurality of acceleration sensors mounted on the board, and a signal processing unit (arithmetic operation). The signal processing unit detects a translational acceleration accompanying moving of the rotating part and a centrifugal acceleration accompanying rotation of the rotating part on the basis of acceleration data detected by each of the acceleration sensors.

Abstract: A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.

Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

Abstract: Provided is a manufacturing method of a liquid ejection head including the following in an order listed: (1) providing a negative, photosensitive first resin layer on a first surface of a substrate, (2) forming a latent image of a pattern of a liquid flow path by exposure on the first resin layer, (3) providing a negative, photosensitive second resin layer on the first resin layer, (4) forming a latent image of a pattern of the liquid ejection orifice by exposure on the second resin layer, (5) heating the first and second resin layers at a certain temperature to obtain a certain Vickers hardness of a non-latent image portion of the second resin layer, and (6) heating the first and second resin layers at a temperature more than or equal to the softening temperature of the first resin layer.

Abstract: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.

Abstract: The present invention is directed to a technique for correcting processing positional deviation and processing size deviation during processing by a focused ion beam device. A focused ion beam device control method includes forming a first processed figure on the surface of a specimen through the application of a focused ion beam in a first processing range of vision; determining the position of a next, second processing range of vision based on the outer dimension of the first processed figure; and moving a stage to the position of the second processing range of vision thus determined. Further, the control method includes forming a second processed figure through the application of the focused ion beam in a second processing range of vision.

Abstract: Provided is a method of manufacturing a liquid ejection head, which is capable of patterning a dry film while suppressing deformation of the dry film caused by a pressure. The method of manufacturing a liquid ejection head includes: preparing a substrate including an ejection orifice member on a first surface; forming, on an ejection orifice surface of the ejection orifice member, a protection film having communicating holes for allowing ejection orifices to communicate to outside; closing an opening of a supply port on a second surface on a side opposite to the first surface of the substrate with a dry film; and patterning the dry film by irradiating the dry film with light under a state in which the protection film is formed on the ejection orifice surface.

Abstract: The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view. The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points.

Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

Abstract: A method for manufacturing a liquid-discharge-head substrate includes providing a substrate having an energy-generating element and a pad, the pad having a wiring layer and a contact-probe receiving section, the contact-probe receiving section having a Vickers hardness that is higher than a Vickers hardness of the wiring layer; bringing a contact probe into contact with the contact-probe receiving section; and performing an electrical inspection by bringing the contact probe into contact with the wiring layer in the pad.

Abstract: A manufacturing method of a MEMS sensor includes a step of, by irradiating a first hole formed in a second layer on a semiconductor substrate with a focused ion beam for a first predetermined time, forming a first sealing film, which seals the first hole, on the first hole, and a step of, by irradiating a second hole formed in the second layer with a focused ion beam for a second predetermined time, forming a second sealing film, which seals the second hole, on the second hole. At this time, each of the first predetermined time and the second predetermined time is a time in which thermal equilibrium of the second layer is maintainable, and the step of forming the first sealing film and the step of forming the second sealing film are performed repeatedly.

Abstract: A manufacturing method of a MEMS sensor includes a step of, by irradiating a first hole formed in a second layer on a semiconductor substrate with a focused ion beam for a first predetermined time, forming a first sealing film, which seals the first hole, on the first hole, and a step of, by irradiating a second hole formed in the second layer with a focused ion beam for a second predetermined time, forming a second sealing film, which seals the second hole, on the second hole. At this time, each of the first predetermined time and the second predetermined time is a time in which thermal equilibrium of the second layer is maintainable, and the step of forming the first sealing film and the step of forming the second sealing film are performed repeatedly.

Abstract: A system for managing trial commodity usage includes a first server that receives a request for a commodity trial and sends a commodity-for-trying to a specified trial place. The first server transmits a trial request command which includes a commodity identification, requester identification, and a sale form flag indicating whether the commodity-for-trying is a trial commodity or a selling commodity. The second server receives the trial request, and stores the commodity identification in association with the requester identification. The second server accepts a selection input indicating, based on a trial of the commodity-for-trying, whether the requestor will purchase the commodity. The second server determines whether the commodity-for-trying should be kept by the requestor. The second server transmits treatment information indicating whether the requestor will purchase the commodity and whether the commodity-for-trying should be kept by the requestor.

Abstract: For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.

Abstract: The present invention is directed to a technique for correcting processing positional deviation and processing size deviation during processing by a focused ion beam device. A focused ion beam device control method includes forming a first processed figure on the surface of a specimen through the application of a focused ion beam in a first processing range of vision; determining the position of a next, second processing range of vision based on the outer dimension of the first processed figure; and moving a stage to the position of the second processing range of vision thus determined. Further, the control method includes forming a second processed figure through the application of the focused ion beam in a second processing range of vision.

Abstract: The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.

Abstract: A sufficient processing speed and sufficient processing accuracy are obtained in a microstructure manufacturing method using ion beams. The microstructure manufacturing method includes the steps of: (a) irradiating a first region of a sample with a first ion beam (projection ion beam) formed by being passed through a first opening portion of a first mask, and etching the sample; and (b) irradiating a second region that is wider than the first region in a direction along a beam width, with a second ion beam (projection ion beam), and processing the sample. Furthermore, a magnitude of a skirt width of a longitudinal section of the second ion beam is smaller than a magnitude of a skirt width of a longitudinal section of the first ion beam.

Abstract: A configuration of a display device capable of color display is obtained. The display device includes a plurality of rod-shaped light-emitting elements each of which includes a semiconductor and which emit light beams having wavelength distributions different from each other, and alignment electrodes (12). The alignment electrodes (12) include a first electrode pair (12a), a second electrode pair (12b), and a third electrode pair (12c).