Abstract: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.

Abstract: A configuration of a display device capable of color display is obtained. The display device includes a plurality of rod-shaped light-emitting elements each of which includes a semiconductor and which emit light beams having wavelength distributions different from each other, and alignment electrodes (12). The alignment electrodes (12) include a first electrode pair (12a), a second electrode pair (12b), and a third electrode pair (12c).

Abstract: A composition for forming a passivation layer, comprising a compound represented by Formula (I): M(OR1)m. In Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.

Abstract: A method for producing a liquid-ejection-head substrate includes providing a substrate having an energy-generating element and a pad, the pad including a wiring layer, the wiring layer in the pad having a relatively thick portion and a relatively thin portion and performing electrical inspection by applying a contact probe to the relatively thin portion of the wiring layer in the pad.

Abstract: A semiconductor device includes a first semiconductor layer formed over a substrate, a second semiconductor layer formed over the first semiconductor layer, a source electrode and a drain electrode formed over the second semiconductor layer, an insulating film formed over the second semiconductor layer, a gate electrode formed over the insulating film, and a protection film covering the insulating film, the protection film being formed by thermal CVD, thermal ALD, or vacuum vapor deposition.

Abstract: An encapsulating material for solar cell containing an ethylene/?-olefin copolymer satisfying the following a1) and a2), and a specific peroxyketal having a 1-hour half-life temperature in a range of 100 to 135 degrees centigrade; the peroxyketal being contained in an amount of 0.1 to less than 0.8 weight parts relative to 100 weight parts of the ethylene/?-olefin copolymer. a1) the shore A hardness is from 60 to 85 as measured in accordance with ASTM D2240. a2) MFR is from 2 to 50 g/10 minutes as measured under the conditions of a temperature of 190 degrees centigrade and a load of 2.16 kg in accordance with ASTM D1238.

Abstract: A method for producing a liquid-ejection-head substrate includes providing a substrate having an energy-generating element and a pad, the pad including a wiring layer, the wiring layer in the pad having a relatively thick portion and a relatively thin portion and performing electrical inspection by applying a contact probe to the relatively thin portion of the wiring layer in the pad.

Abstract: A method for manufacturing a liquid-discharge-head substrate includes providing a substrate having an energy-generating element and a pad, the pad having a wiring layer and a contact-probe receiving section, the contact-probe receiving section having a Vickers hardness that is higher than a Vickers hardness of the wiring layer; bringing a contact probe into contact with the contact-probe receiving section; and performing an electrical inspection by bringing the contact probe into contact with the wiring layer in the pad.

Abstract: A composition for forming a passivation layer, including a resin and a compound represented by Formula (I): M(OR1)m. In Formula (I), M includes at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.

Abstract: A liquid discharge head includes a substrate, a heat resistor layer, and a side wall member that forms a side wall of a pressure chamber. The heat resistor layer has a heat effect portion configured to foam liquid in an interior of the pressure chamber to discharge liquid from a discharge port. The heat effect portion is apart from the substrate, at least part of a surface of the heat resistor layer is covered with a covering layer in the interior of the pressure chamber, and the covering layer extends from the interior of the pressure chamber to a position coming into contact with the side wall of the side wall member.

Abstract: A recording head having a substrate and a channel forming member configured to form a flow channel, a supply port formed at the substrate so as to penetrate through the substrate, the flow channel communicates with the supply port, and a member formed of an organic material and configured to connect two surfaces forming the supply port and opposing each other with the supply port interposed therebetween.

Abstract: An encapsulating material for solar cell excellent in a balance among properties including transparency, flexibility, adhesiveness, heat resistance, appearance, crosslinking properties, electrical properties and calender moldability. The encapsulating material includes an ethylene/?-olefin copolymer satisfying the following requirements: (a1) the content ratio of structural units derived from ethylene is from 80 to 90 mol % and the content ratio of structural units derived from ?-olefin having 3 to 20 carbon atoms is from 10 to 20 mol %; (a2) MFR is equal to or more than 2 g/10 minutes and less than 10 g/10 minutes as measured under the conditions of a temperature of 190 degrees centigrade and a load of 2.16 kg in accordance with ASTM D1238; (a3) the density is from 0.865 to 0.884 g/cm3 as measured in accordance with ASTM D1505; and (a4) the shore A hardness is from 60 to 85 as measured in accordance with ASTM D2240.

Abstract: A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode.

Abstract: A solar cell including a substrate 1, a nanopillar 11 having diameter D1 connected to the substrate 1, and a nanopillar 12 having diameter D2 connected to the substrate 1 is characterized in that D2 is greater than D1 in order to realize a solar cell having, as the surface structure, a nanopillar array structure with which it is possible to prevent reflection within the broad wavelength region of solar light. A nanopillar array structure 21 formed from two types of nanopillars having different diameters has a point of minimum reflectivity of a nanopillar array structure formed from the nanopillar 11 having diameter D1 and a point of minimum reflectivity of a nanopillar array structure formed from the nanopillar 12 having diameter D2 and therefore, is capable of preventing reflection within the broad wavelength region of solar light.

Abstract: A liquid discharge head includes a substrate, a heat resistor layer, and a side wall member that forms a side wall of a pressure chamber. The heat resistor layer has a heat effect portion configured to foam liquid in an interior of the pressure chamber to discharge liquid from a discharge port. The heat effect portion is apart from the substrate, at least part of a surface of the heat resistor layer is covered with a covering layer in the interior of the pressure chamber, and the covering layer extends from the interior of the pressure chamber to a position coming into contact with the side wall of the side wall member.

Abstract: A recording head having a substrate and a channel forming member configured to form a flow channel, a supply port formed at the substrate so as to penetrate through the substrate, the flow channel communicates with the supply port, and a member formed of an organic material and configured to connect two surfaces forming the supply port and opposing each other with the supply port interposed therebetween.

Abstract: A semiconductor device includes a first semiconductor layer formed over a substrate, a second semiconductor layer formed over the first semiconductor layer, a source electrode and a drain electrode formed over the second semiconductor layer, an insulating film formed over the second semiconductor layer, a gate electrode formed over the insulating film, and a protection film covering the insulating film, the protection film being formed by thermal CVD, thermal ALD, or vacuum vapor deposition.

Abstract: A composition for forming a passivation layer, including a resin and a compound represented by Formula (I): M(OR1)m. In Formula (I), M includes at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.

Abstract: A passivation film includes aluminum oxide and niobium oxide, and the passivation film is used in a photovoltaic cell element having a silicon substrate. A photovoltaic cell element includes: a p-type silicon substrate 1 that comprises monocrystalline silicon or polycrystalline silicon; an n-type impurity diffusion layer 2 that is formed on a light receiving surface of the silicon substrate 1; a first electrode 5 that is formed on the n-type impurity diffusion layer 2; a second electrode 6 that is formed on the back surface of the silicon substrate 1; a passivation film 7 that is formed on the back surface of the silicon substrate 1, the passivation film 7 having plural openings OA and including aluminum oxide and niobium oxide. The second electrode 6 is electrically connected to the back surface of the silicon substrate 1 through the plural openings OA.

Abstract: A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area.