Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

Abstract: The present application relates to: a strip for lateral flow assay, comprising a support, a medium for development, a sample pad comprising a subpad, and an absorption pad; and a cartridge for lateral flow assay, comprising the same. According to the present application, the strip adopts a novel sample loading method, thereby obtaining reproducible results irrespective of the volume of an injected sample, and it is possible to readily change the amount of a sample, as necessary, thereby improving the reproducibility of measured results and convenience.

Abstract: A semiconductor memory device includes a plurality of memory chips each including a chip identification (ID) generation circuit.

Abstract: A flash memory device includes a plurality of memory blocks. A selected memory block among the plurality of memory blocks includes 2n pages of data. The selected memory block includes different types of memory cells capable of storing different numbers of bits.

Abstract: A non-volatile memory device receives a start command through a command line, receives an address through an address line, receives at least one setting value through the address line, receives a confirm command corresponding to the start command through the command line, sets at least one parameter of the non-volatile memory device as the setting value based on the start command, a number of the setting value, and the confirm command, and executes an operation that corresponds to the start command, on a memory cell that corresponds to the address, based on the set parameter.

Abstract: The present invention relates to a carrier tape for TAB-package and a manufacturing method thereof, wherein a TAB tape including a base film having a central area and edge areas at both directions of the central area, a wiring pattern formed at the central area of the base film, a transfer area formed at the edge area of the base film and exposed by the base film, a plurality of sprocket holes arranged in a row on the transfer area and a metal pattern discretely formed from the wiring pattern, and formed at the edge areas of the base film, wherein the metal pattern is formed with a paired structure formed at both sides of the plurality of sprocket holes, such that the present invention has an advantageous effect in that no Cu layer or a metal layer exists at a portion of the sprocket holes from which friction is generated by a driving roller during assembly work between a drive IC and chips/drive IC and panel to dispense with generation of foreign objects such as Cu particles, thereby enhancing reliability of

Abstract: A stacked semiconductor apparatus and method of fabricating same are disclosed. The apparatus includes upper and lower semiconductor devices having a similar pattern of connection elements. When stacked connected the resulting plurality of semiconductor devices includes a serial connection path traversing the stack, and may also include parallel connection paths, back-side mounted large components, and vertical thermal conduits.

Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

Abstract: A semiconductor device includes a substrate, and a through electrode passing through the substrate. The semiconductor device has a pad region and a through electrode region. A pad covers the pad region, extends into the through electrode region, and delimits an opening in the through electrode region. A through electrode extends through the semiconductor substrate below the hole in the pad in the through region.

Abstract: A method of operating a memory device includes applying an initial read voltage to a selected wordline to perform a read operation on memory cells connected to the selected wordline, determining whether a read failure occurs with respect to one or more of the memory cells, upon determining that a read failure has occurred with respect to some of the memory cells, determining threshold voltage distribution information for distinct groups of the memory cells, and determining a new read voltage to be applied to the selected wordline based on the threshold voltage distribution information.

Abstract: A method of driving a nonvolatile memory device, includes; forward shifting threshold voltages of nonvolatile memory cells by executing a first program loop with respect to the nonvolatile memory cells, and thereafter, reverse shifting the threshold voltages of the nonvolatile memory cells, and again forward shifting the threshold voltages of the nonvolatile memory cells by executing a second program loop with respect to the nonvolatile memory cells.

Abstract: A stacked semiconductor apparatus and method of fabricating same are disclosed. The apparatus includes upper and lower semiconductor devices having a similar pattern of connection elements. When stacked connected the resulting plurality of semiconductor devices includes a serial connection path traversing the stack, and may also include parallel connection paths, back-side mounted large components, and vertical thermal conduits.

Abstract: The present invention relates to a system for measuring the hemoglobin concentration in whole blood, wherein the system comprises: a light-radiating unit including a light source that emits two types of incident light having different wavelengths; a diffusion unit which diffuses the incident light emitted by the light-radiating unit; a cuvette-holding unit which is formed so as to hold a cuvette including a blood sample; a detection unit which detects each absorbance of the two types of incident light having different wavelengths; a processing unit which determines the hemoglobin concentration in the blood by processing the measured absorbance result; and a control unit which regulates the two types of incident light having different wavelengths in order to repeatedly/sequentially radiate same. Although the system for measuring hemoglobin in whole blood of the present invention uses a small amount of whole blood, it is possible to measure the total hemoglobin concentration in an accurate and reliable manner.

Abstract: A liposome comprising a lipid bilayer encapsulating a complex containing a hydrophobic active ingredient and a polypeptide, a pharmaceutical composition including the liposome, and a method of delivering an active ingredient to a target site in the body of a subject.

Abstract: A rod-shaped FRP bar is manufactured with a fiber and a resin by using a nozzle 100 which includes an outer nozzle 11 having a penetration hole at its center and a plurality of middle nozzles 12 disposed at an inlet of the outer nozzle 11 so that one middle nozzle is located inside another middle nozzle with an interval. Fibers are supplied through a center hole of the middle nozzle located at an innermost location, through intervals between the middle nozzles and through intervals between the middle nozzles and the outer nozzle, thereby making a hybrid FRP bar 1 having a section in which the fibers configure a plurality of fiber distribution layers from the center of the FRP bar toward the outside.

Abstract: A memory device includes a memory cell array having a plurality of memory cells, and a page buffer unit including a plurality of page buffers configured to store a plurality of pieces of data sequentially read from some of the plurality of memory cells at different read voltage levels, respectively, and to perform a logic operation on the plurality of pieces of data, respectively.

Abstract: A nonvolatile memory device including memory blocks, a pre-decoder, and a row decoder is disclosed. Each of the memory blocks has a plurality of memory cells. The pre-decoder includes a multiplexer and negative level shifters. The multiplexer is configured to generate multiplexing signals in response to address signals. Each of the negative level shifters is configured to generate a converted multiplexing signal corresponding to a respective multiplexing signal by converting a multiplexing signal having a ground voltage into a converted multiplexing signal having a first negative voltage. The row decoder is configured to select at least one of the memory blocks in response to the converted multiplexing signals.

Abstract: A method of programming a nonvolatile memory device including multi-level cells that store multi-bit data, includes performing a pre-programming operation that programs at least some of the multi-level cells to a plurality of intermediate states which are different from an erased state, and performing a main programming operation that programs the multi-level cells to a plurality of target states corresponding to the multi-bit data. At least some of the intermediate program states have threshold voltage distributions that partially overlap each other.

Abstract: The present invention relates to a carrier tape for TAB-package and a manufacturing method thereof, wherein a TAB tape including a base film having a central area and edge areas at both directions of the central area, a wiring pattern formed at the central area of the base film, a transfer area formed at the edge area of the base film and exposed by the base film, a plurality of sprocket holes arranged in a row on the transfer area and a metal pattern discretely formed from the wiring pattern, and formed at the edge areas of the base film, wherein the metal pattern is formed with a paired structure formed at both sides of the plurality of sprocket holes, such that the present invention has an advantageous effect in that no Cu layer or a metal layer exists at a portion of the sprocket holes from which friction is generated by a driving roller during assembly work between a drive IC and chips/drive IC and panel to dispense with generation of foreign objects such as Cu particles, thereby enhancing reliability of

Abstract: In a method of merging blocks in a semiconductor memory device according to example embodiments, a plurality of data are written into one or more first blocks using a first program method. One or more merge target blocks that are required to be merged are selected among the one or more first blocks. A merge-performing block for a block merge operation is selected among the one or more first blocks and one or more second blocks. A plurality of merge target data are written from the merge target blocks into the merge-performing block using a second program method that is different from the first program method.