Abstract: An electroluminescent display device includes a plurality of pixels, an electroluminescent element disposed in each of the pixels, a pixel selecting thin film transistor disposed in each of the pixels and selecting the corresponding pixel in response to a gate signal, and a driving thin film transistor disposed in each of the pixels and supplying an electric current to the corresponding electroluminescent element in response to a display signal supplied through the corresponding pixel selecting thin film transistor. The driving thin film transistor includes a plurality of gates.

Abstract: A vapor-depositing mask is disposed adjacent a surface of a substrate disposed in a vacuum chamber, vapor-depositing beams containing an organic EL material are generated by a vapor-depositing beam generator, the vapor-depositing beams pass through openings in the vapor-depositing mask, and the organic EL material is vapor-deposited in a predetermined region on the surface of the substrate. The vapor-depositing beams are guided through a plurality of vapor-depositing beam passing pipes provided in the vapor-depositing beam generator. Alternatively, the vapor-depositing beams generated by the vapor-depositing beam generator are guided through a vapor-depositing beam direction adjusting board having a plurality of vapor-depositing beam passing holes. This enhances directional uniformity of the vapor-depositing beams, thereby enabling making each film thickness of organic EL material layers uniform and thus enhancing precision of forming patterns of the layers.

Abstract: In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.

Abstract: For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

Abstract: A first contact hole (6) is formed penetrating a gate insulating film (5), on which a gate electrode (7g) is formed and simultaneously a first contact (7s, 7d) is formed in the first contact hole. A second contact hole (9) penetrating an interlayer insulating film (8) is formed, and a second contact (10) is formed in the second contact hole (9). A third contact hole (11) is formed penetrating a planarization film (26), and an electrode (40) is formed in the third contact hole (11). By using a plurality of contact holes for electrically connecting the electrode (40) and a semiconductor film (3), the aspect ratio of each contact hole can be reduced, thereby achieving improvement in yield, high-level integration due to a reduction in difference in area between upper and bottom surfaces of the contact, and other advantageous improvements.

Abstract: A first moisture blocking layer formed of a silicon type nitride film such as SiNx or the like is formed over the entire surface so as to cover a drain electrode and a source electrode of a TFT. On the first moisture blocking layer, a first planarization film formed of an organic material is provided. On the first planarization film, a second moisture blocking layer formed of SiNx or the like is provided. In the peripheral region, the second moisture blocking layer extends down on the first moisture blocking layer and is connected with the first moisture blocking layer. Also, a sealing glass is bonded to the second moisture blocking layer using the sealing member. By enclosing the first planarization film by the first moisture blocking layer and the second moisture blocking layer, intrusion of external moisture can be effectively prevented.

Abstract: An inter-layer insulating film and a gate insulating film which are positioned on the optical path of light from an organic EL element to be externally emitted, for example, located under a transparent electrode, are removed. Because SiO2 films having a refractive index which differs significantly from refractive indexes of other films are used for these films, there was a problem of light attenuation in these layers. Such light attenuation can be reduced by removing these layers located in the region through which light from the organic EL element passes.

Abstract: An organic EL element with an emissive layer and a second electrode layer is formed on a device glass substrate in an organic EL display device. The second electrode layer covers the emissive layer. An anti-reflection layer for preventing the reflection of light by the second electrode layer is formed on the device glass substrate except the region where the emissive layer is formed. Since this layer prevents the reflection of light by the second electrode layer, only the light from the emissive layer radiates outwards through the device glass substrate, improving the contrast of the organic EL display device.

Abstract: A display apparatus includes display pixels each having a thin film transistor and an EL element formed successively forming over a substrate. The EL element has a cathode electrode connected to the source of the thin film transistor and an anode electrode, and is driven by the thin film transistor. The EL element externally emits light from the reverse side of the substrate. For example, when the cathode electrode is formed the comblike, meshlike, or gridlike pattern on the luminous layer, the light is emitted through the slits of the cathode pattern. The display apparatus is provided that can improve the aperture ratio of a display pixel and can increase the degree of freedom in deciding the size and the drive capability of a TFT element which drives an EL element.

Abstract: In an organic EL panel having a device glass substrate provided with an organic EL element on a surface thereof, a sealing glass substrate attached to the device glass substrate and a desiccant layer formed on a surface of the sealing glass substrate, spacers are disposed between a cathode of the organic EL element and the desiccant layer. A heat-conductive layer can be formed on a surface of the sealing glass substrate including a pocket portion. The heat-conductive layer can be formed by vapor depositing or sputtering a metal layer such as a Cr layer or an Al layer. This inhibits damaging the organic EL element and increases a heat dissipating ability, thereby inhibiting deterioration of a device property caused by temperature rise.

Abstract: A display apparatus includes display pixels each having a thin film transistor and an EL element formed successively forming over a substrate. The EL element has a cathode electrode connected to the source of the thin film transistor and an anode electrode, and is driven by the thin film transistor. The EL element externally emits light from the reverse side of the substrate. For example, when the cathode electrode is formed the comblike, meshlike, or gridlike pattern on the luminous layer, the light is emitted through the slits of the cathode pattern. The display apparatus is provided that can improve the aperture ratio of a display pixel and can increase the degree of freedom in deciding the size and the drive capability of a TFT element which drives an EL element.

Abstract: A large-sized organic EL display unit is formed by bonding four small display panels on junction surfaces so that the pitch between emission parts adjacent to each other over the small display panels is equal to the pitch between the emission parts in the small display panels, so that the junction between the adjacent ones of the small electroluminescence display panels is inconspicuous.

Abstract: A color display apparatus comprises a substrate; thin film transistors formed on the substrate, each of the thin film transistors having a source electrode and a drain electrode; electroluminescence elements respectively formed over the thin film transistors and driven by the thin film transistors, each of the electroluminescence elements having a cathode connected to a source electrode or drain electrode of a thin film transistor, a luminous element layer, and an anode electrode sequentially disposed thereover. A color filter or fluorescent color conversion layer acting as a color element is formed on the side of the anode electrode of an electroluminescence element. The same luminous layer material is used for each display pixel to display a color image.

Abstract: On a substrate, there is disposed a gate electrode having a section of a trapezoidal configuration expanded toward the substrate. The gate electrode is covered with a silicon nitride film having a thickness T1 of 400 Å, and a silicon oxide film having a thickness T2 of 1200 Åis formed on the silicon nitride film. A polycrystalline silicon film constructing an active region is formed on a gate insulating film constituted of the silicon nitride film and the silicon oxide film. By forming the silicon oxide film in a sufficient thickness of 1200 Åor more, and further forming the silicon nitride film 23 of 400 Åor more, a thin-film transistor cannot easily be influenced by a stepped portion formed by the gate electrode, and withstanding voltage of the gate insulating film of the thin-film transistor can be enhanced.

Abstract: A display substrate and a sealing member are affixed, an element formation surface of the display substrate having an electroluminescence element formed thereon and the sealing member having an adhesive applied thereon in advance on the side opposing the element formation surface of the display substrate. After the affixing process, pressure is applied to the adhesive which is applied in a manner to surround the element layer formation region of the display substrate by pressing the substrates, to deform the adhesive and to achieve a predetermined gap. The adhesive is irradiated with ultraviolet light and is cured, to adhere the substrates. During the application of the adhesive before adhering, an opening is formed in the application pattern of the adhesive in such a manner that the opening does not close by the application of pressure. After the substrates are adhered with a predetermined gap therebetween, the opening is closed to completely seal the element surface of the display substrate.

Abstract: A vertically aligned type liquid crystal display includes a liquid crystal layer disposed between a plurality of pixel electrodes and a common electrode and containing vertically aligned liquid crystal molecules, the orientation of the liquid crystal molecules being controlled by electric field. An orientation control window is formed in the common electrode. A distance Wp between adjacent pixel electrodes and/or a width Ws of the orientation control window is selected so as to satisfy Wp≧d/2 and/or Ws≧d/2, where d is a distance (or a cell gap) between the pixel electrodes and the common electrode. Viewing angle is widened and a viewing angle characteristic is improved, and abnormal orientation or grittiness of an image is eliminated.

Abstract: An organic EL display device comprises a first TFT (30), which is a switching TFT, an organic EL element driving TFT, and an organic EL element (60) having an anode (61), a cathode (66), and an emissive element layer (65) interposed between both electrodes. The EL element driving TFT comprises a second and third TFTs (35, 40) connected in parallel. Because electrical current to the organic EL element (60) is supplied from a plurality of TFTs (35, 40), variation in the total current value can be suppressed to therefore reduce the variation in luminance, even when characteristics vary among the TFTs driving the organic EL element.

Abstract: A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.

Abstract: An active matrix display device employing a top gate type TFT structure has a storage capacitor Csc and a liquid crystal capacitor Clc in each pixel of a pixel section, a first electrode (30) of the storage capacitor Csc served by a p-Si active layer (14) of the TFT, and a second electrode (32) formed to at least partly overlap the active layer (14), with an insulating layer (12) between the active layer (14) and the second electrode (32) below it. When a driver section is to be built in, the driver section TFT is the same top gate type as the pixel section TFT, and an active layer (140) is made of the same material as the active layer (14) and has a conductive layer (32D) which is made of the same material as the second electrode (32) with the insulating layer (12) held between the active layer (140) and the conductive layer (320) below it. The pixel section can form the storage capacitor while preventing lowering of the aperture ratio.

Abstract: Regarding an element having a channel width W greater than a pitch P of a pulse laser beam, a direction of the channel width W of a channel region CH is inclined with respect to a direction of a major axis of a line beam LB. Consequently, even if a defective crystallization region R is caused by an nonuniform intensity of an irradiated region in laser annealing forming p-Si of a p-Si TFT LCD, the whole channel width W of the channel region CH does not overlap the defective crystallization region R. Therefore, even if the defective crystallization region R is generated, element characteristics are not affected. Thus, the manufacturing yield of an excellent p-Si LCD can be enhanced.