Integrated type ion shield for semiconductor manufacturing apparatus

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Description

FIG. 1 is a front, top and right side perspective view of an integrated type ion shield for semiconductor manufacturing apparatus according to the design;

FIG. 2 is a rear, bottom and left side perspective view thereof;

FIG. 3 is a front elevational view thereof;

FIG. 4 is a rear elevational view thereof;

FIG. 5 is a right side elevational view thereof;

FIG. 6 is a left side elevational view thereof;

FIG. 7 is a top plan view thereof;

FIG. 8 is a bottom plan view thereof; and,

FIG. 9 is a cross-sectional view taken along line 9-9 of FIG. 7.

Claims

The ornamental design for an integrated type ion shield for semiconductor manufacturing apparatus, as shown and described.

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Patent History
Patent number: D901407
Type: Grant
Filed: Jan 23, 2019
Date of Patent: Nov 10, 2020
Assignee: Hitachi High-Tech Corporation (Tokyo)
Inventors: Yutaka Kouzuma (Tokyo), Michiaki Kobayashi (Tokyo), Kazuyuki Hirozane (Tokyo), Nobuya Miyoshi (Tokyo), Kohei Kawamura (Tokyo), Hiroyuki Kobayashi (Tokyo)
Primary Examiner: Janice Hallmark
Assistant Examiner: Harold E Blackwell, II
Application Number: 29/677,764