Abstract: According to one embodiment, for first data, which is read from a nonvolatile memory, for which a first data translation is performed, a second data translation that is a reverse translation of the first data translation is performed. Next, for the first data for which the second data translation is performed, the first data translation is performed. In addition, the read first data is compared with the first data for which the first data translation is performed, and check information is generated based on a result of the comparison.

Abstract: According to one embodiment, for each area having a first size, a number of accesses to the area is recorded in first information. In units of sub areas each having a second size smaller than the first size, access information for the sub area is recorded in the second information. In the first information, the number of accesses to an area to which a sub area in which duplicate accesses occur belongs is updated.

Abstract: According to one embodiment, a memory system includes an error mitigation encoder that executes error mitigation coding on write data to be stored in a processing target page of a non-volatile memory, a memory interface that writes the write data which has undergone the error mitigation coding in the processing target page of the non-volatile memory and reads the write data which has undergone the error mitigation coding from the processing target page as read data, an error mitigation decoder that performs error mitigation decoding on the read data read from the processing target page of the non-volatile memory, and an error mitigation coding rate deciding unit that decides an error mitigation coding rate of the error mitigation encoder and the error mitigation decoder on the basis of at least one of information indicating the processing target page and information indicating a device characteristic of the processing target page.

Abstract: According to one embodiment, a programmable integrated circuit includes a circuit group including a plurality of physical modules, a configuration memory that stores a configuration bit string indicating a physical module to be allocated to each of one or more operation contents in a circuit configuration implemented by the circuit group among the plurality of physical modules, a changing circuit that changes at least part of the allocation of the physical module to the operation content so that exhaustion degrees of a plurality of memory cells constituting the configuration memory are equalized, and a configuration memory access circuit that stores a configuration bit string indicating the changed allocation in the configuration memory.

Abstract: According to one embodiment, a memory controller includes a compression unit and a padding processing unit. The compression unit generates first compressed data and second compressed data by compressing first data and second data. The padding processing unit pads first padding data for the first compressed data in accordance with a first padding pattern and pads second padding data for the second compressed data in accordance with a second padding pattern.

Abstract: According to one embodiment, for each area having a first size, a number of accesses to the area is recorded in first information. In units of sub areas each having a second size smaller than the first size, access information for the sub area is recorded in the second information. In the first information, the number of accesses to an area to which a sub area in which duplicate accesses occur belongs is updated.

Abstract: According to one embodiment, for first data, which is read from a nonvolatile memory, for which a first data translation is performed, a second data translation that is a reverse translation of the first data translation is performed. Next, for the first data for which the second data translation is performed, the first data translation is performed. In addition, the read first data is compared with the first data for which the first data translation is performed, and check information is generated based on a result of the comparison.

Abstract: According to one embodiment, a memory controller includes a compression unit and a padding processing unit. The compression unit compresses first data to be written into a first page and second data to be written into a second page. The padding processing unit performs a padding processing such that the compressed first data is written into first memory cells, first padding data is written into second memory cells, the compressed second data is written into third memory cells, and second padding data is written into fourth memory cells.

Abstract: According to one embodiment, a semiconductor apparatus includes a block and a controller. The block includes a logic circuit and a routing module. The routing module includes a plurality of first wiring lines, a plurality of second wiring lines, switches, and a wiring line switching circuit. The switches are arranged to perform connection and disconnection between the first wiring lines and the second wiring lines. The wiring line switching circuit is arranged to switch a wiring line for transmitting the signal, among the first wiring lines and the second wiring lines. The controller is arranged to control driving of the switches and the wiring line switching circuit.

Abstract: According to one embodiment, a memory controller includes a compression unit and a padding processing unit. The compression unit generates first compressed data and second compressed data by compressing first data and second data. The padding processing unit pads first padding data for the first compressed data in accordance with a first padding pattern and pads second padding data for the second compressed data in accordance with a second padding pattern.

Abstract: According to one embodiment, a memory controller includes a compression unit and a padding processing unit. The compression unit compresses first data to be written into a first page and second data to be written into a second page. The padding processing unit performs a padding processing such that the compressed first data is written into first memory cells, first padding data is written into second memory cells, the compressed second data is written into third memory cells, and second padding data is written into fourth memory cells.

Abstract: According to one embodiment, a semiconductor apparatus includes a block and a controller. The block includes a logic circuit and a routing module. The routing module includes a plurality of first wiring lines, a plurality of second wiring lines, switches, and a wiring line switching circuit. The switches are arranged to perform connection and disconnection between the first wiring lines and the second wiring lines. The wiring line switching circuit is arranged to switch a wiring line for transmitting the signal, among the first wiring lines and the second wiring lines. The controller is arranged to control driving of the switches and the wiring line switching circuit.

Abstract: According to one embodiment, a first controller determines whether one or a plurality of pointers corresponding to a buffered command can be stored in a second buffer. The first controller stores the pointers in the second buffer when the pointers can be stored in the second buffer. The first controller causes a second controller to execute the command and to perform data transfer between a non-volatile memory and a data buffer, and executes data transfer between the data buffer and a host using the pointers stored in the second buffer.

Abstract: According to one embodiment, a data transfer control device complying with a communication protocol which executes an update of information from an attachment device in a predetermined area of a system memory, the device includes a receiving part receiving the information from the attachment device, a transferring part transferring the information in the predetermined area, the information from the transferring part overwritten in the predetermined area sequentially, and a determining part inhibiting a transfer of the information in the transferring part to omit the update of the information in the predetermined area.

Abstract: According to one embodiment, a semiconductor device includes a field programmable gate array (FPGA), a controller and a memory. The controller controls the FPGA. The memory stores converted configuration data obtained by converting configuration data of the FPGA, based on defect data of the FPGA.

Abstract: According to one embodiment, a first controller determines whether one or a plurality of pointers corresponding to a buffered command can be stored in a second buffer. The first controller stores the pointers in the second buffer when the pointers can be stored in the second buffer. The first controller causes a second controller to execute the command and to perform data transfer between a non-volatile memory and a data buffer, and executes data transfer between the data buffer and a host using the pointers stored in the second buffer.

Abstract: A semiconductor includes first and second cell blocks, a first word line, a logic circuit, and a control circuit. The first cell block is coupled between a first terminal and a second terminal. The second cell block is coupled between a third terminal and a fourth terminal. The first word line is coupled to a first memory cell in the first cell block and a second memory cell in the second cell block. The logic circuit is coupled to the second and fourth terminals. The control circuit is configured to control a voltage applied to the first word line to cause the first cell block and the second cell block to output an output voltage which is based on data stored in the first and second memory cells.

Abstract: According to one embodiment, a memory controller includes: a first flash encoding unit that performs flash encoding on user data according to a first scheme to generate user data flash codes; an encoding unit that performs an error correction encoding process on the user data flash codes to generate parities; a second flash encoding unit that performs flash encoding on the parities according to a second scheme to generate parity flash codes; and a memory I/F that writes the user data flash codes and the parity flash codes to the nonvolatile memory.

Abstract: A memory system includes a first nonvolatile memory, a second nonvolatile memory with a longer access latency than the first nonvolatile memory, a first error correction unit, a second error correction unit, and an interface. The first nonvolatile memory stores first data and a first error correction code generated for the first data. The second nonvolatile memory stores a second error correction code which is generated for the first data with a higher correction ability than that of the first error correction code. The first error correction unit performs error correction on the first data by using the first error correction code. The second error correction unit performs error correction on the first data by using the second error correction code. The interface transmits the first data after the error correction to a host.

Abstract: According to one embodiment, a data transfer control device complying with a communication protocol which executes an update of information from an attachment device in a predetermined area of a system memory, the device includes a receiving part receiving the information from the attachment device, a transferring part transferring the information in the predetermined area, the information from the transferring part overwritten in the predetermined area sequentially, and a determining part inhibiting a transfer of the information in the transferring part to omit the update of the information in the predetermined area.