Abstract: A gripping mechanism (3) includes a gripping roller (32) and a holder (31) that houses the gripping roller (32). A gripped portion (42) of a first component (4) is gripped between an outer surface of the gripping roller (32) and an inner surface of the holder (31) through action of gravity acting on the gripping roller (32). Preferably, the gripping roller (32) includes a core (321) that is cylindrical or columnar in shape and a covering section (322) that is an elastic body covering a circumferential surface of the core (321). Preferably, the covering section (322) has a circumferential surface with a friction coefficient greater than a friction coefficient of the circumferential surface of the core (321).

Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c).

Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

Abstract: The semiconductor memory device includes: a first electrode and a second electrode disposed opposed to each other in a first direction; a resistance change film that is provided between the first electrode and the second electrode and contains at least one kind of element selected from germanium, antimony, and tellurium; and a first layer that is provided on a side surface of the resistance change film in a second direction intersecting the first direction and contains at least one kind of the element forming the resistance change film and at least one kind of element selected from nitrogen, carbon, boron, and oxygen.

Abstract: A semiconductor memory device includes a first electrode and a second electrode opposed to each other in a first direction, a phase-change film provided between the first electrode and the second electrode, a first film formed of an insulator provided on a side surface of the phase-change film in a second direction intersecting the first direction, and a second film formed of a conductor containing carbon and provided along a side surface of the phase-change film in the second direction with the first film interposed between the second film and the side surface.

Abstract: A molecular beam epitaxy apparatus includes a radical generator for generating a radical species, a molecular beam cell for generating a molecular beam or an atomic beam, and a vacuum chamber for accommodating a substrate therein, in use, the substrate being irradiated with the radical species and the molecular beam or the atomic beam in vacuum, to thereby form, on the substrate, a crystal of a compound derived from the element of the radical species and the element of the molecular beam or the atomic beam.

Abstract: The semiconductor memory device includes: a first electrode and a second electrode disposed opposed to each other in a first direction; a resistance change film that is provided between the first electrode and the second electrode and contains at least one kind of element selected from germanium, antimony, and tellurium; and a first layer that is provided on a side surface of the resistance change film in a second direction intersecting the first direction and contains at least one kind of the element forming the resistance change film and at least one kind of element selected from nitrogen, carbon, boron, and oxygen.

Abstract: A semiconductor memory device includes a first electrode and a second electrode opposed to each other in a first direction, a phase-change film provided between the first electrode and the second electrode, a first film formed of an insulator provided on a side surface of the phase-change film in a second direction intersecting the first direction, and a second film formed of a conductor containing carbon and provided along a side surface of the phase-change film in the second direction with the first film interposed between the second film and the side surface.

Abstract: According to one embodiment, a magnetic memory device includes a lower region, and a stacked structure provided on the lower region, wherein the stacked structure includes a conductive oxide layer containing boron (B), a first magnetic layer provided between the lower region and the conductive oxide layer, having a variable magnetization direction, and containing iron (Fe) and boron (B), a second magnetic layer provided between the lower region and the first magnetic layer, having a fixed magnetization direction, and containing iron (Fe) and boron (B), and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.

Abstract: According to one embodiment, a magnetic memory device includes a lower region, and a stacked structure provided on the lower region, wherein the stacked structure includes a conductive oxide layer containing boron (B), a first magnetic layer provided between the lower region and the conductive oxide layer, having a variable magnetization direction, and containing iron (Fe) and boron (B), a second magnetic layer provided between the lower region and the first magnetic layer, having a fixed magnetization direction, and containing iron (Fe) and boron (B), and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.

Abstract: According to one embodiment, a film formation method using a magnetron sputtering apparatus including first and second magnets provided on first and second target holders, includes forming an insulating film on a wafer placed on a main surface of a wafer stage by sputtering first and second insulating targets set on the first and second target holders, wherein the wafer includes an effective area to be used for a product and an ineffective area outside the effective area, and when viewed from a direction perpendicular to the main surface of the wafer stage, at least a part of the first magnet overlaps the effective area of the wafer placed on the main surface of the wafer stage, and the entire second magnet does not overlap the effective area of the wafer placed on the main surface of the wafer stage.

Abstract: According to one embodiment, a magnetic memory device includes: a first magnetic layer; a nonmagnetic layer on the first magnetic layer; a second magnetic layer on the nonmagnetic layer; and an insulator film on the nonmagnetic layer surrounding a side surface of the second magnetic layer. The second magnetic layer has an area of a surface facing the nonmagnetic layer smaller than that of the nonmagnetic layer. The nonmagnetic layer includes a first region that is provided between the first magnetic layer and the insulator film. The first region includes an amorphous state.

Abstract: According to one embodiment, a magnetoresistive element includes a first layer including a material as one of a nitride, an oxide, a carbide and a boride, a second layer as a magnetic layer on the first layer, a third layer as a nonmagnetic layer on the second layer, and a fourth layer as a magnetic layer on the third layer, magnetization directions of the second and fourth layers being a perpendicular direction in which the first, second, third and fourth layers are stacked. The first layer is thinner than a crystal grain size of the first layer in the perpendicular direction.

Abstract: According to one embodiment, a magnetic memory device includes: a first magnetic layer; a nonmagnetic layer on the first magnetic layer; a second magnetic layer on the nonmagnetic layer; and an insulator film on the nonmagnetic layer surrounding a side surface of the second magnetic layer. The second magnetic layer has an area of a surface facing the nonmagnetic layer smaller than that of the nonmagnetic layer. The nonmagnetic layer includes a first region that is provided between the first magnetic layer and the insulator film. The first region includes an amorphous state.

Abstract: A molecular beam epitaxy apparatus includes a radical generator for generating a radical species, a molecular beam cell for generating a molecular beam or an atomic beam, and a vacuum chamber for accommodating a substrate therein, in use, the substrate being irradiated with the radical species and the molecular beam or the atomic beam in vacuum, to thereby form, on the substrate, a crystal of a compound derived from the element of the radical species and the element of the molecular beam or the atomic beam.

Abstract: A radical generator includes a supply tube, a plasma-generating tube, a coil winding about an outer circumference of the plasma-generating tube, for generating an inductively coupled plasma in the plasma-generating tube, an electrode for generating a capacitively coupled plasma in the plasma-generating tube and adding the capacitively coupled plasma to the inductively coupled plasma, and a parasitic-plasma-preventing tube including a dielectric material which extends from a bottom of the plasma-generating tube to an opening of the supply tube in a space between the bottom and the opening, and a tip part thereof is inserted into the supply tube to cover an inner wall of the supply tube for preventing a generation of a parasitic plasma between the electrode and the inner wall of the supply tube.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having a perpendicular and invariable magnetization, a first nonmagnetic insulating layer on the first magnetic layer, a second magnetic layer on the first nonmagnetic insulating layer, the second magnetic layer having a perpendicular and variable magnetization, a second nonmagnetic insulating layer on the second magnetic layer, and a nonmagnetic conductive layer on the second nonmagnetic insulating layer. The second nonmagnetic insulating layer includes a first metal oxide with a predetermined element. The first nonmagnetic insulating layer includes a second metal oxide.

Abstract: According to one embodiment, a ferroelectric memory includes a semiconductor layer, an interfacial insulating film formed on the semiconductor layer, a ferroelectric film formed on the interfacial insulating film, and a gate electrode formed on the ferroelectric film, wherein the ferroelectric film is a film which includes a metal that is hafnium (Hf) or zirconium (Zr) and oxygen as the main components and to which an element selected from the group consisting of silicon (Si), magnesium (Mg), aluminum (Al).

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having a perpendicular and invariable magnetization, a first nonmagnetic insulating layer on the first magnetic layer, a second magnetic layer on the first nonmagnetic insulating layer, the second magnetic layer having a perpendicular and variable magnetization, a second nonmagnetic insulating layer on the second magnetic layer, and a nonmagnetic conductive layer on the second nonmagnetic insulating layer. The second nonmagnetic insulating layer includes a first metal oxide with a predetermined element. The first nonmagnetic insulating layer includes a second metal oxide.