Abstract: A surface treatment method for a semiconductor device includes providing a substrate where a plurality of projected patterns are formed, forming a hydrophobic coating layer on a surface of each of the plurality of projected patterns, rinsing the substrate with deionized water, and drying the substrate, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof.

Abstract: A nonvolatile memory device includes a pipe insulation layer having a pipe channel hole, a pipe gate disposed over the pipe insulation layer, a pair of cell strings each having a columnar cell channel, and a pipe channel coupling the columnar cell channels and surrounding inner sidewalls and a bottom of the pipe channel hole.

Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode disposed below the light emitting structure, the first electrode being electrically connected to the first conductivity type semiconductor layer, a second electrode within the light emitting structure, the second electrode being electrically connected to the second conductivity type semiconductor layer, an insulating part electrically separating the second electrode from the first conductivity type semiconductor layer, the active layer, and the first electrode, a first pad electrode electrically connected to the first electrode, and a second pad electrode electrically connected to the second electrode, the second pad electrode being exposed to a top surface of the light emitting structure.

Abstract: Provided are a circuit board, and a lighting device and board housing module having the circuit board, the circuit board, including a support substrate having a first region and a second region bent from the first region, light emitting devices on the first region, and a protective support portion protruding more than the light emitting devices from the support substrate of the first region.

Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.

Abstract: A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. The adhesion between a diffusion barrier layer and a metal silicide layer may be improved by increasing the surface energy of the diffusion barrier layer through a surface treatment. Therefore, although the metal silicide layer is fused in a high-temperature process, it is possible to prevent a void from being caused at the interface between the diffusion barrier layer and the metal silicide layer. Moreover, it is possible to increase the adhesion between a conductive layer and the diffusion barrier layer by increasing the surface energy of the conductive layer through the surface treatment.

Abstract: The present description relates to an apparatus and method for receiving a control channel in a multi-component carrier system. The method for performing random access disclosed in the present description comprises the steps of: transmitting a random access preamble to a base station from an activated sub-serving cell; monitoring physical downlink control channel candidates during a response window one the basis of a certain aggregation in a temporary search space in a control region of the activated sub-serving cell, wherein the control region consists of a group of control channel elements; and adjusting an uplink time of the activated sub-serving cell according to a time advance command indicated by a random access response when the random access response, including a random access identifier corresponding to the random access preamble, is received in the response window.

Abstract: A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer.

Abstract: In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.

Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.

Abstract: Disclosed herein are a variable resistance memory device and a method of fabricating the same. The variable resistance memory device may include a first electrode; a second electrode; and a variable resistance layer configured to be interposed between the first electrode and the second electrode, wherein the variable resistance layer includes a Si-added metal oxide.

Abstract: A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.

Abstract: Provided are a heat radiation printed circuit board and a method of manufacturing the same, the heat radiation printed circuit board being produced by the method including: forming a circuit layer having an insulating layer, a circuit pattern and a solder resist on a first area of one surface of a metal substrate; and forming a bending part in a second area, in which the insulating layer is not formed, by bending the metal substrate, whereby a crack can be prevented in advance from being generated in the insulating layer, and durability and reliability of the heat radiation printed circuit board and a backlight unit applying the same can be improved.

Abstract: A method for fabricating a semiconductor apparatus includes setting a semiconductor substrate in a process chamber, increasing an internal temperature of the process chamber to a predetermined temperature for pyrolyzing a source gas, supplying the source gas to the inside of the process chamber and pyrolyzing ions of the source gas to remain on the semiconductor substrate, and forming the ohmic contact layer by supplying a reaction gas to the inside of the process chamber, wherein the reaction gas is reacted with non-metal ions pyrolyzed from source gas.

Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.

Abstract: A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.

Abstract: Provided is a printed circuit board, including: a support substrate including a first region in which light emitting elements are mount, a second region extending from the first region, and a bending portion between the first region and the second region, an insulating substrate on the support substrate, wiring portions on the insulating substrate, and a protective layer on the wiring portions.

Abstract: A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a IV group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer.

Abstract: A method for fabricating a semiconductor device includes supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period, and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate.

Abstract: A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved.