Abstract: A power system including a first battery pack, a second battery pack, and a power management circuit is disclosed. The first battery pack has a first end and a second end, and has a first battery capacity. The second battery pack has a third end and a fourth end. The third end is coupled to the second end of the first battery pack and provides a low battery voltage. The fourth end is grounded, the second battery pack has a second battery capacity, and the second battery capacity is greater than the first battery capacity. The power management circuit is coupled to the second battery pack to receive the low battery voltage, and provides a component operating voltage to an electronic components based on the low battery voltage.

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming a metallic oxide layer within the gate opening, forming a first dielectric layer on the metallic oxide layer, forming a second dielectric layer on the first dielectric layer, forming a work function metal (WFM) layer on the second dielectric layer, and forming a gate metal fill layer on the WFM layer. The forming the first dielectric layer includes depositing an oxide material with an oxygen areal density less than an oxygen areal density of the metallic oxide layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first source/drain epitaxial feature formed over a substrate, a second source/drain epitaxial feature formed over the substrate, two or more semiconductor layers disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a gate electrode layer surrounding a portion of one of the two or more semiconductor layers, a first dielectric region disposed in the substrate and in contact with a first side of the first source/drain epitaxial feature, and a second dielectric region disposed in the substrate and in contact with a first side of the second source/drain epitaxial feature, the second dielectric region being separated from the first dielectric region by a substrate.

Abstract: An electrode controls transmittance of a blocking layer over a photodiode of a pixel sensor (e.g., a photodiode of a small pixel detector) by changing oxidation of a metal material included in the blocking layer. By using the electrode to adjust transmittance of the blocking layer, pixel sensors for different uses and/or products may be produced using a single manufacturing process. As a result, power and processing resources are conserved that otherwise would have been expended in switching manufacturing processes. Additionally, production time is decreased (e.g., by eliminating downtime that would otherwise have been used to reconfigure fabrication machines.

Abstract: A semiconductor structure and method for forming the semiconductor are provided. The semiconductor structure includes a first electrode comprising a first portion, a second portion, and a sheet portion connecting the first portion to the second portion. A ferroelectric material is over the sheet portion. A second electrode is over the ferroelectric material.

Abstract: In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

Abstract: A semiconductor may include an active region, an epitaxial source/drain formed in and extending above the active region, and a first dielectric layer formed over a portion of the active region. The semiconductor may include a first metal gate and a second metal gate formed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer and the second metal gate, and a titanium layer, without an intervening fluorine residual layer, formed on the metal gate and the epitaxial source/drain. The semiconductor may include a first metal layer formed on top of the titanium on the first metal gate, a second metal layer formed on top of the titanium layer on the epitaxial source/drain, and a third dielectric layer formed on the second dielectric layer. The semiconductor may include first and second vias formed in the third dielectric layer.

Abstract: Anti-PVRIG and anti-TIGIT antibodies are provided.

Abstract: An electronic device including a protective substrate is provided. The protective substrate includes a substrate and an anti-reflection layer. The anti-reflection layer is disposed on the substrate. The anti-reflection layer includes a first sublayer to an nth sublayer sequentially arranged on the substrate, where n is greater than 1, and a product range of a thickness and a refractive index of the nth sublayer ranges from 100 nm to 170 nm.

Abstract: Online platforms such as online marketplaces may collect sensitive data, such as personal identifiable information or financial information. A data owner (e.g., an operator of an online platform) may encrypt sensitive data prior to storing the data in a persistent data store. An encryption validation method may be performed check whether a data set is encrypted prior to storing the data in the persistent data store. For example, for a data set that includes a set of character strings, the encryption validation method may check whether entropy of corresponding positions of the set of character strings satisfies a threshold (e.g., is within a threshold of a benchmark entropy value) to determine whether the data set is encrypted or sufficiently encrypted (e.g., by checking whether the data set is sufficiently randomized).

Abstract: The present invention is related to a novel positive electrode active material for lithium-ion battery. The positive electrode active material is expressed by the following formula: Li1.2NixMn0.8-x-yZnyO2, wherein x and y satisfy 0<x?0.8 and 0<y?0.1. In addition, the present invention provides a method of manufacturing the positive electrode active material. The present invention further provides a lithium-ion battery which uses said positive electrode active material.

Abstract: A computer-implemented method for ordinal prediction is provided. The method includes encoding time series data with a temporal encoder to obtain latent space representations. The method includes optimizing the temporal encoder using semi-supervised learning to distinguish different classes in the labeled space using labeled data, and augment the latent space representations using unlabeled training data, to obtain semi-supervised representations. The method further includes discarding a linear layer after the temporal encoder and fixing the temporal encoder. The method also includes training k-1 binary classifiers on top of the semi-supervised representations to obtain k-1 binary predictions. The method additionally includes identifying and correcting inconsistent ones of the k-1 binary predictions by matching the inconsistent ones to consistent ones of the k-1 binary predictions. The method further includes aggregating the k-1 binary predictions to obtain an ordinal prediction.

Abstract: A display panel and a display device are disclosed. The display panel includes a plurality of pixel island regions spaced apart from each other. A plurality of connection bridge regions connecting adjacent ones of the pixel island regions to each other. At least one of the connection bridge regions includes a first metal layer, a second metal layer, and a third metal layer disposed in a stacked arrangement, and each of the first metal layer, the second metal layer, and the third metal layer is patterned into at least one metal trace.

Abstract: A fault detection method includes: obtaining a video quality parameter of a monitored video stream, where the video quality parameter is determined according to a packet loss recovery method of the monitored video stream, the video quality parameter includes an effective packet loss factor, and the effective packet loss factor is used to indicate effectiveness of network packet loss recovery performed by using the packet loss recovery method of the monitored video stream; and performing fault detection based on the video quality parameter of the monitored video stream.

Abstract: A computer-implemented method for ordinal prediction is provided. The method includes encoding time series data with a temporal encoder to obtain latent space representations. The method includes optimizing the temporal encoder using semi-supervised learning to distinguish different classes in the labeled space using labeled data, and augment the latent space representations using unlabeled training data, to obtain semi-supervised representations. The method further includes discarding a linear layer after the temporal encoder and fixing the temporal encoder. The method also includes training k?1 binary classifiers on top of the semi-supervised representations to obtain k?1 binary predictions. The method additionally includes identifying and correcting inconsistent ones of the k?1 binary predictions by matching the inconsistent ones to consistent ones of the k?1 binary predictions. The method further includes aggregating the k?1 binary predictions to obtain an ordinal prediction.

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the same are disclosed. The method includes forming first and second nanostructured channel regions on first and second fin structures, forming first and second oxide layers with first and second thicknesses, forming a dielectric layer with first and second layer portions on the first and second oxide layers, forming first and second capping layers with first and second oxygen diffusivities on the first and second layer portions, growing the first and second oxide layers to have third and fourth thicknesses, and forming a gate metal fill layer over the dielectric layer. The first and second thicknesses are substantially equal to each other and the first and second oxide layers surround the first and second nanostructured channel regions. The second oxygen diffusivity is higher than the first oxygen diffusivity. The fourth thickness is greater than the third thickness.

Abstract: Provided are a continuous post-treatment method and device for a penem compound. The method includes the following steps: S1, performing continuous extraction on a reaction crude product of a penem compound, to obtain an extraction heavy phase and an extraction light phase; S2, performing continuous solid-liquid separation on the extraction heavy phase, to obtain a liquid phase separation product; S3, performing continuous pH adjustment on the liquid phase separation product until a pH value thereof is 6.1-6.3, to obtain pH-adjusted solution; and S4, performing continuous crystallization treatment on the pH-adjusted solution by a first crystallization solvent, to obtain a penem compound product. The use of the method for the post-treatment of the reaction crude product of the penem compound has the advantages of high treatment speed and high efficiency, and stable material properties and a low deterioration rate during the treatment, and has better control over the yield and purity of a target product.

Abstract: Disclosed is a thermal conduction-electrical conduction isolated circuit board with a ceramic substrate and a power transistor embedded, mainly comprising: a dielectric material layer, a heat-dissipating ceramic block, a securing portion, a stepped metal electrode layer, a power transistor, and a dielectric material packaging, wherein a via hole is formed in the dielectric material layer, the heat-dissipating ceramic block is correspondingly embedded in the via hole, the heat-dissipating ceramic block has a thermal conductivity higher than that of the dielectric material layer and a thickness less than that of the dielectric material layer, the stepped metal electrode layer conducts electricity and heat for the power transistor, the dielectric material packaging is configured to partially expose the source connecting pin, drain connecting pin, and gate connecting pin of the encapsulated stepped metal electrode layer.

Abstract: An electrode controls transmittance of a blocking layer over a photodiode of a pixel sensor (e.g., a photodiode of a small pixel detector) by changing oxidation of a metal material included in the blocking layer. By using the electrode to adjust transmittance of the blocking layer, pixel sensors for different uses and/or products may be produced using a single manufacturing process. As a result, power and processing resources are conserved that otherwise would have been expended in switching manufacturing processes. Additionally, production time is decreased (e.g., by eliminating downtime that would otherwise have been used to reconfigure fabrication machines.

Abstract: Provided is a peptide and method in preventing or treating infections caused by a wide spectrum of pathogens, including bacteria and fungus in hosts such as plants and animals. Methods of preventing or treating plant diseases and infection in animals are also provided.