Abstract: A color electrophoretic display includes a display region, a pixel array, a display medium layer, an optical layer, a first color filter array, and a second color filter array. The display region includes multiple sub-pixel regions. The pixel array corresponds to the display region in position. The display medium layer is located on the pixel array. The optical layer is located on the display medium layer. The first color filter array is located on the optical layer. The second color filter array is located between the display medium layer and the optical layer.

Abstract: A fan assembly including a base, a fan, a light-emitting unit, and a lighting effect component is provided. The fan is rotatably disposed above the base, and includes a central part and multiple blades extending outwards from the central part, and each of the blades has a top surface away from the base. The light-emitting unit is disposed on the base and located between the base and the central part of the fan. The lighting effect component is disposed on the base and surrounds the light-emitting unit. A projection of the lighting effect component projected onto the base is greater than a projection of the fan projected onto the base. A height of the lighting effect component protruding from the base is less than a distance between the top surface of one of the blades and the base. The lighting effect component includes an inclined inner surface.

Abstract: A system to send a first command to execute an initialization process on a first memory die of a plurality of memory dies of a memory sub-system. The system reads a bit value indicating that the first memory die is executing a low peak current draw phase of the initialization process. In response to reading the bit value, sending a second command to a second memory die of the plurality of memory dies of the memory sub-system, the second command to execute the initialization process on the second memory die.

Abstract: A method includes forming a body region of a first conductivity type and a doped region of a second conductivity type in a semiconductor substrate; forming a gate structure the substrate, and first gate spacers respectively on first and second sides of the gate structure; depositing a second spacer layer and a third spacer layer over the gate structure; patterning the third spacer layer into third gate spacers respectively on the first and second sides of the gate structure; removing a first one of the third gate spacers from the first side of the gate structure, while leaving a second one of the third gate spacers on the second side of the gate structure; and patterning the second spacer layer into a second gate spacer by using the second one of the third gate spacers as an etching mask.

Abstract: A blower includes an upper housing and a lower housing. An air flow space and an air outlet passage are formed inside and communicate with each other. A fan is mounted in the upper housing and the lower housing. A driving shaft of a motor passes through the lower housing and is connected to the fan. The upper housing has a first annular rib with an arc-shaped surface at an edge of the air inlet opening. The upper housing has a second annular rib protruding on an inner bottom surface of the upper housing and adjacent to the air inlet opening. When an external fluid flows in the air inlet opening, the fluid can smoothly pass through the arc-shaped surface of the first annular rib. A part of the fluid is blocked by the second annular rib, and thus forms a vertical downward airflow curtain.

Abstract: In some embodiments, the present disclosure relates to a semiconductor device. The semiconductor device includes a channel layer disposed over a base substrate, and an active layer disposed on the channel layer. A source contact and a drain contact are over the active layer and are laterally spaced apart from one another along a first direction. A gate electrode is arranged on the active layer between the source contact and the drain contact. A passivation layer is arranged on the active layer and laterally surrounds the source contact, the drain contact, and the gate electrode. A conductive structure is electrically coupled to the source contact and is disposed laterally between the gate electrode and the source contact. The conductive structure extends along an upper surface and a sidewall of the passivation layer.

Abstract: A single-beam three-degree-of-freedom homodyne laser interferometer based on an array detector. A single-frequency laser beam is input to a Michelson interference structure, the measurement beam and the reference beam perform non-coaxial interference and form a single-beam homodyne interference signal by setting the angle of a reference plane mirror, the array detector is selected to effectively receive the single-beam homodyne interference signal, and finally, three-degree-of-freedom signal linear decoupling on the single-beam homodyne interference signal is achieved through a three-degree-of-freedom decoupling method based on Lissajous ellipse fitting.

Abstract: A request is received from a host system to execute a portion of a memory management operation associated with a memory cell of a plurality of memory cells of one or more memory devices. A voltage parameter level associated with execution of the portion of the memory management operation is identified. A determination is made that a comparison of the voltage parameter level with a voltage parameter level threshold satisfies a condition. A power management action is performed in response to the condition being satisfied.

Abstract: The color filter array includes multiple first color resist, multiple second color resists, and second color resists third color resists. The first color resist have a first color. The second color resists have a second color different from the first color. The third color resists have a third color different from the first color and second color. A reflectance of the third color resists is greater than a reflectance of the first color resists and a reflectance of the second color resists, the first color resists are continuously arranged along a first diagonal direction and a second diagonal direction, and the third color resists are not arranged along the second diagonal direction continuously.

Abstract: The color electrophoretic display includes a display region, a pixel array, a display medium layer, and a color filter array. The display region includes multiple sub-pixel regions. The pixel array corresponds to the display region in position. The display medium layer is located on the pixel array. The color filter array is located on the display medium layer. The color filter array includes multiple color resists. A portion of the color resists include a first pixel fill factor, another portion of the color resists include a second pixel fill factor, the second pixel fill factor is smaller than the first pixel fill factor, and the first pixel fill factor and the second pixel fill factor are smaller than 60%.

Abstract: A memory device includes memory dies, each memory die including a memory array and control logic, operatively coupled with the memory array, to perform peak power management (PPM) operations. The PPM operations include causing a memory die to be placed in a suspended state to suspend execution of a first media access operation with a reserved current budget, receiving a set of requests to execute at least a second media access operation during the suspended state, and in response receiving the set of requests, handling the set of requests by implementing current budget arbitration logic with respect to the reserved current budget.

Abstract: A memory device includes sets of memory dies. Each set of memory dies includes a memory dies associated with a respective channel of a plurality of channels, and each channel of the plurality of channels has a respective ready busy (RB) signal. The memory device further includes an input/output (I/O) expander to perform operations including receiving at least one command to perform clock synchronization associated with a clock signal with respect to the plurality of sets of memory dies, and in response to receiving the command, causing circuitry of the I/O expander to be configured to create an RB signal short with respect to a particular combination of channels. The clock synchronization is associated with peak power management (PPM) initialization.

Abstract: A supporter is provided, and includes a base, a holder, and a linkage assembly. The base has a surface and a groove that is formed on the surface. The holder is disposed on the surface of the base. The linkage assembly is disposed in the base. The linkage assembly is rotatable relative to the base. The linkage assembly includes a first shaft, a second shaft, and a linkage member. The first shaft is at least partially disposed in the groove. The second shaft is connected to the holder. The linkage member is connected to the first shaft and the second shaft. The linkage member is configured to link the first shaft to the second shaft.

Abstract: A portion of a memory management operation associated with a first current level that satisfies a condition pertaining to a threshold current level and a second current level that satisfies the condition pertaining to the threshold current level is identified. Mask data associated with the portion of the memory management operation is identified. Based on the mask data, a current management action is performed during execution of a requested memory management operation received from a host system.

Abstract: A memory device includes a first memory die of a plurality of memory dies, the first memory die comprising a first memory array and a first power management component, wherein the first power management component is configured to send a first test value to one or more other power management components on one or more other memory dies of the plurality of memory dies during a first power management cycle of a first power management token loop.

Abstract: The present disclosure provides an adaptor, comprising an adapting bracket, an adapting member, and at least one locking component. The adapting bracket comprises a chute comprising two opposite sidewalls and a bottom wall. The bottom wall is disposed between the two sidewalls. The adapting member is disposed on the adapting bracket. The adapting member comprises an adapting interface and is in communicating with the chute. The at least one locking component is disposed in the adapting bracket. Each of the locking components comprises a locking member movably extending into the chute. When an electronic component is inserted in the chute, a mating interface of the electronic component is connected to the adapting interface, and the locking member is inserted into an engaging groove of the electronic component. By protecting the electronic component with the adapting bracket, it is possible to avoid damage to the electronic component from impacts.

Abstract: A die bonding method for a micro-LED. The method includes plating tin at a die bonding position of a printed circuit board (PCB) to obtain a tin-plated layer; adding a protective layer and a flux layer on the tin-plated layer in sequence to obtain a pretreated PCB; and transferring a flip-chip micro-LED to the pretreated PCB, reflowing and die bonding to complete die bonding of the micro-LED.

Abstract: A variety of applications can include multiple memory die packages configured to engage in peak power management (PPM) across the multiple packages of memory dies. A communication line coupled to each memory die in the multiple memory die packages can be used to facilitate the PPM. A global management die can start a communication sequence among the multiple memory die packages to share a current budget across the multiple memory die packages by driving a signal on the communication line. Local management dies can use the received signal having clock pulses driven by the global management die on the communication line to engage in the PPM. To engage in global PPM, each memory die can be structured, to be selected as the global management die or a local management die, with one or more controllers to interface with the multiple memory die packages and to handle current budget limits.

Abstract: A memory device includes memory dice, each memory die including: a memory array; a memory to store a data structure; and control logic that includes: multiple processing threads to execute memory access operations on the memory array concurrently; a priority ring counter, the data structure to store an association between a value of the priority ring counter and a subset of the multiple processing threads; a threads manager to increment the value of the priority ring counter before a power management cycle and to identify one or more prioritized processing threads corresponding to the subset of the multiple processing threads; and a peak power manager coupled with the threads manager and to prioritize allocation of power to the one or more prioritized processing threads during the power management cycle.

Abstract: A variety of applications can include a memory device having a memory die designed to control a power budget for a cache and a memory array of the memory die. A first flag received from a data path identifies a start of a cache operation on the data and a second flag from the data path identifies an end of the cache operation. A controller for peak power management can be implemented to control the power budget based on determination of usage of current associated with the cache from the first and second flags. In various embodiments, the controller can be operable to feedback a signal to a memory controller external to the memory die to adjust an operating speed of an interface from the memory controller to the memory die. Additional devices, systems, and methods are discussed.