Abstract: Various embodiments of the present disclosure provide a memory device and methods of forming the same. In one embodiment, a memory device is provided. The memory device includes a gate electrode disposed in an insulating material layer, a ferroelectric dielectric layer disposed over the gate electrode, a metal oxide semiconductor layer disposed over the ferroelectric dielectric layer, a source feature disposed over the metal oxide semiconductor layer, wherein the source feature has a first dimension, and a source extension. The source extension includes a first portion disposed over the source feature, wherein the first portion has a second dimension that is greater than the first dimension. The source extension also includes a second portion extending downwardly from the first portion to an elevation that is lower than a top surface of the source feature.

Abstract: Various embodiments of the present disclosure provide a memory device and methods of forming the same. In one embodiment, a memory device is provided. The memory device includes a first oxide material having a first sidewall and a second sidewall, a first spacer layer in contact with the first sidewall of the first oxide material, the first spacer layer having a first conductivity type, a second spacer layer in contact with the second sidewall of the first oxide material, wherein the second spacer layer has the first conductivity type. The memory device also includes a channel layer having a second conductivity type that is opposite to the first conductivity type, wherein the channel layer is in contact with the first oxide material, the first spacer layer, and the second spacer layer. The memory device further includes a ferroelectric layer in contact with the channel layer.

Abstract: A disclosed semiconductor structure may include an interposer, a first semiconductor die electrically coupled to the interposer, a packaging substrate electrically coupled to the interposer, and a capping layer covering one or more of a first surface of the first semiconductor die and a second surface of the packaging substrate. The capping layer may be formed over respective surfaces of each of the first semiconductor die and the packaging substrate. In certain embodiments, the capping layer may be formed only on the first surface of the first semiconductor die and not formed over the package substrate. In further embodiments, the semiconductor structure may include a second semiconductor die, such that the capping layer covers a surface of only one of the first semiconductor die and the second semiconductor die. The semiconductor structure may include a molding compound die frame that is partially or completely covered by the capping layer.

Abstract: Provided are a light-emitting diode and a semiconductor device.

Abstract: Presented herein are systems and methods for generating a multi-view focused video stream. The methods involve obtaining at least one video stream of a first participant in an online video communication session between at least the first participant at a first endpoint and a second participant at a second endpoint; determining a bounding region of at least one element in the video stream; generating a focused video stream from the video stream that includes a focused view of the at least one element within the bounding region; and presenting the focused video stream on the second endpoint to at least the second participant.

Abstract: A ferroelectric memory device includes a semiconductor structure, a stack structure disposed on the semiconductor structure and including multiple dielectric layers and multiple conductive layers that are alternatingly stacked, and multiple memory arrays extending through the stack structure. Each of the memory arrays includes two spaced-apart memory segments connecting to the stack structure, multiple spaced-apart channel portions each being connected to a corresponding one of the memory segments, and multiple pairs of source/bit lines that are spaced apart from each other. Each of the pairs of the source/bit lines is connected between corresponding two of the channel portions. The ferroelectric memory device further includes multiple carrier structures each being connected to one of the source/bit lines in a corresponding one of the pairs of the source/bit lines, and being separated from the other one of the source/bit lines in the corresponding one of the pairs of the source/bit lines.

Abstract: An apparatus including an interface and a processor. The interface may be configured to receive video frames generated by a plurality of capture devices. The processor may be configured to perform operations to detect objects in the video frames received from a first of the capture devices, determine depth information corresponding to the objects detected, determine blending lines in response to the depth information, perform video stitching operations on the video frames from the capture devices based on the blending lines and generate panoramic video frames in response to the video stitching operations. The blending lines may correspond to gaps in a field of view of the panoramic video frames. The blending lines may be determined to prevent the objects from being in the gaps in the field of view. The panoramic video frames may be generated to fit a size of a display.

Abstract: A cascade extension device and a cascade system having the cascade extension device are provided. The cascade extension device includes a control module, a buffer module, a storage module, and a selecting output module. The cascade system includes a processor and a plurality of extension devices. The processor may simultaneously control the plurality of extension devices through judging the data packet received as a write command, a read command, or a bypass command by a plurality of extension devices.

Abstract: A two-dimensional topological photonic crystal cavity, a design method thereof and an application in a laser. The two-dimensional topological photonic crystal cavity comprises multiple photonic crystal supercells, the multiple photonic crystal supercells having vortex-shaped structural variation around a center of the two-dimensional topological photonic crystal cavity, and bands of the multiple photonic crystal supercells having Dirac points at balance positions of the vortex-shaped structural variation. The two-dimensional topological photonic crystal cavity, also called the Dirac vortex cavity, is characterized by having large mode field area, large free spectral range, narrow beam divergence angle, arbitrary mode degeneracy and compatibility with plurality of types of substrate material, and may be used in a surface-emitting semiconductor laser, enabling stable single-transverse-mode and single-longitudinal-mode operation, while ensuring broad-area and high-power output of a laser.

Abstract: Examples are disclosed that relate to providing transition-related assistance during a presentation. One example provides a method comprising, during a rehearsal of a presentation, receiving content of the presentation. Based on the content received, a transition within the presentation is determined via a machine learning model. During a performance of the presentation, the transition is automatically enacted.

Abstract: An apparatus including an interface and a processor. The interface may be configured to receive video frames generated by a plurality of capture devices. The processor may be configured to perform operations to detect objects in the video frames received from a first of the capture devices, determine depth information corresponding to the objects detected, determine blending lines in response to the depth information, perform video stitching operations on the video frames from the capture devices based on the blending lines and generate panoramic video frames in response to the video stitching operations. The blending lines may correspond to gaps in a field of view of the panoramic video frames. The blending lines may be determined to prevent the objects from being in the gaps in the field of view. The panoramic video frames may be generated to fit a size of a display.

Abstract: Systems, methods, and computer-executable instructions for verifying a chat bot. Registration information for the chat bot is received that includes keywords. Queries are submitted to the chat bot and responses to the queries are received. The responses are classified using a classifier. Verification that the responses are classified as approved responses are done. The registration information is stored and the registration of the chat bot is completed based upon the verified responses. A search query that includes a search keyword is received. The search keyword is matched to the keywords associated with the chat bot. Search results that include a link to the chat bot that are based upon the search query are provided.

Abstract: A cascade extension device and a cascade system having the cascade extension device are provided. The cascade extension device includes a control module, a buffer module, a storage module, and a selecting output module. The cascade system includes a processor and a plurality of extension devices. The processor may simultaneously control the plurality of extension devices through judging the data packet received as a write command, a read command, or a bypass command by a plurality of extension devices.

Abstract: Examples are disclosed that relate to providing transition-related assistance during a presentation. One example provides a method comprising, during a rehearsal of a presentation, receiving content of the presentation. Based on the content received, a transition within the presentation is determined via a machine learning model. During a performance of the presentation, the transition is automatically enacted.

Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.

Abstract: The present invention is a multi-frequency antenna device comprising a first electrode layer and a second electrode layer disposed on a first surface of an insulating substrate, wherein the second electrode layer is located outside periphery of the first electrode layer. A third electrode layer is disposed on a second surface of the insulating substrate, and the first surface and the second surface are separated by the insulating substrate. A conductive element penetrates the insulating substrate and is connected to the first electrode layer. A groove is disposed on a side surface and/or the second surface of the insulating substrate, and a projection of the groove on the first surface completely or partially overlaps the second electrode layer. An effective dielectric constant between the second electrode layer and the third electrode layer is changed through arrangement of the groove to adjust a resonance frequency generated by the second electrode layer.

Abstract: A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.

Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.

Abstract: The present invention is a multi-frequency antenna device comprising a first electrode layer and a second electrode layer disposed on a first surface of an insulating substrate, wherein the second electrode layer is located outside periphery of the first electrode layer. A third electrode layer is disposed on a second surface of the insulating substrate, and the first surface and the second surface are separated by the insulating substrate. A conductive element penetrates the insulating substrate and is connected to the first electrode layer. A groove is disposed on a side surface and/or the second surface of the insulating substrate, and a projection of the groove on the first surface completely or partially overlaps the second electrode layer. An effective dielectric constant between the second electrode layer and the third electrode layer is changed through arrangement of the groove to adjust a resonance frequency generated by the second electrode layer.