Abstract: The present invention is a multi-frequency antenna device comprising a first electrode layer and a second electrode layer disposed on a first surface of an insulating substrate, wherein the second electrode layer is located outside periphery of the first electrode layer. A third electrode layer is disposed on a second surface of the insulating substrate, and the first surface and the second surface are separated by the insulating substrate. A conductive element penetrates the insulating substrate and is connected to the first electrode layer. A groove is disposed on a side surface and/or the second surface of the insulating substrate, and a projection of the groove on the first surface completely or partially overlaps the second electrode layer. An effective dielectric constant between the second electrode layer and the third electrode layer is changed through arrangement of the groove to adjust a resonance frequency generated by the second electrode layer.

Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.

Abstract: A method of displaying navigation information for a vehicle with use of a portable device is provided to include: using a wheel speed sensor to sense a wheel speed of the vehicle; an instrument cluster device of the vehicle determining whether the sensed wheel speed is greater than a predetermined wheel speed threshold; and the instrument cluster device automatically displaying a primary navigation screen upon determining that the sensed wheel speed is greater than the predetermined wheel speed threshold.

Abstract: The present invention discloses method for preparing deoxycholic acid (DCA) or an ester thereof or a pharmaceutically acceptable salt thereof. Said compounds may be applied to remove a fat deposition.

Abstract: A method, apparatus and program product for generating a business rule model. In one embodiment, there is provided a method for generating a business rule model, comprising: extracting from source code of an application system a business flow executed by the source code, the business flow comprising a plurality of business procedures that are executed in an order; analyzing parts in the source code that are associated with various business procedures among the plurality of business procedures, building rule metadata describing business rules followed by various business procedures; and generating a business rule model followed by the business flow on the basis of the order and the rule metadata. In one embodiment of the present invention, there is provided an apparatus for generating a business rule model. Accordingly, a business rule model may be automatically generated from source code of an application system without manual manipulation.

Abstract: The present invention discloses method for preparing deoxycholic acid (DCA) or an ester thereof or a pharmaceutically acceptable salt thereof. Said compounds may be applied to remove a fat deposition.

Abstract: A fin structure for a semiconductor device, such as a FinFET structure, has first and second semiconductor layers and an air gap between the layers. The second semiconductor layer includes a recessed portion, the air gap is located in the recessed portion, and the recessed portion has an upwardly-opening acute angle in the range from about 10° to about 55°. The air gap may prevent current leakage. A FinFET device may be manufactured by first recessing and then epitaxially re-growing a source/drain fin, with the regrowth starting over a tubular air gap.

Abstract: Systems, methods, and computer-executable instructions for verifying a chat bot. Registration information for the chat bot is received that includes keywords. Queries are submitted to the chat bot and responses to the queries are received. The responses are classified using a classifier. Verification that the responses are classified as approved responses are done. The registration information is stored and the registration of the chat bot is completed based upon the verified responses. A search query that includes a search keyword is received. The search keyword is matched to the keywords associated with the chat bot. Search results that include a link to the chat bot that are based upon the search query are provided.

Abstract: Systems, methods, and computer-executable instructions for verifying a chat bot. Registration information for a chat bot is received and stored. A search query is received from a browser that includes a search keyword. A determination if a chat bot should be included in search engine results page based upon the search query is made. The search query is matched to keywords associated with the chat bot. Using the registration information, if the chat bot is launchable from the search engine results page is determined. The chat bot is integrated in the search engine results page. The search engine results page is provided to the browser.

Abstract: A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.

Abstract: A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.

Abstract: An error is determined in a target track of a heat-assisted recording medium. The error triggers an error recovery procedure. The error recovery procedure involves storing data from at least part of an adjacent track that is immediately proximate the target track to another data storage location. The error recovery procedure also involves, for two or more iterations in which a laser power is incrementally changed from a lower power to a higher power, erasing at least part of the adjacent track at the laser power and attempting to recover the target track.

Abstract: The present invention provides a copper film with large grains, where, at least one surface, more than 50% area of the copper film is [100]-oriented grains, and the average size of [100]-oriented grains is more than 150 ?m. The grains on the copper film have large grain sizes and high preferred orientation, so that the copper film is provided with excellent properties such as flexibility, stability and electro-migration resistance. A copper foil laminate with the above-mentioned copper film is also herein provided.

Abstract: An etching method adapted to forming grooves in Si-substrate and FinFET transistor manufactured thereof are provided. The etching method includes providing a silicon substrate, at least two gate structures formed on the silicon substrate and at least two gate spacer structures disposed on the silicon substrate; performing a first etching process on the silicon substrate to form a first groove, which has a base and two inclined sidewalls, ascending to respective bottoms of the gate structures, and are interconnected with the base, respectively; and performing a second etching process on the silicon substrate at the base of the first groove, so as to form a second groove in a trench shape, wherein the two inclined sidewalls of the first groove are interconnected with the second groove respectively, and the first etching process is substantially different from the second etching process.

Abstract: The present invention discloses method for preparing deoxycholic acid (DCA) or an ester thereof or a pharmaceutically acceptable salt thereof. Said compounds may be applied to remove a fat deposition.

Abstract: Methods and systems for determining frames and photo composition within multiple frames are provided. First, a plurality of frames, which are respectively captured with a predefined time interval are obtained. At least one object within at least two of the frames is detected. In some embodiments, a moving speed of the object is calculated according to the positions of the object in the respective frames and the predefined time interval, and candidate frames are selected from the frames according to the moving speed of the object. In some embodiments, an overlapped area corresponding to the object within a first frame and a second frame is calculated, and at least one candidate frame is selected according to the overlapped area corresponding to the object. The at least one candidate frame is composed to generate a composed photo.

Abstract: The present invention provides a semiconductor structure, comprising a substrate, a gate structure, a source/drain region and at least a dislocation. The gate structure is disposed on the substrate. The source/drain region is disposed in the substrate at two sides of the gate structure. The dislocation is located in the source/drain region, and is asymmetrical relating to a middle axis of the source/drain region.

Abstract: A Portulaca oleracea L. extract feed additive and a preparation method thereof are provided. The Portulaca oleracea L. extract feed additive takes a Portulaca oleracea L. extract and a carrier as raw materials. The Portulaca oleracea L. extract is prepared by the ultrasonic auxiliary water extraction. The preparation method of the present invention has less raw material waste, high activity component content in the extract and acquisition rate of the extractum, which facilitates improving the effect efficiency and reducing production cost. The Portulaca oleracea L. extract feed additive as a natural plant feed additive is capable of improving the animal's metabolism, increasing the animal's relative weight gain, improving the animal's survival rate, reducing the disease incidence of various diarrhea symptoms, decreasing the animal's stress response and increasing the animal productivity.

Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.