Patents by Inventor Masahiro Sugimoto
Masahiro Sugimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8975139Abstract: A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening.Type: GrantFiled: September 4, 2012Date of Patent: March 10, 2015Assignees: DENSO CORPORATION, Toyota Jidosha Kabushiki KaishaInventors: Shinichiro Miyahara, Toshimasa Yamamoto, Hidefumi Takaya, Masahiro Sugimoto, Yukihiko Watanabe, Narumasa Soejima, Tsuyoshi Ishikawa
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Patent number: 8950838Abstract: An inkjet recording apparatus stabilizes an ink discharge amount of a line head, while suppressing an ink supply amount of a circulation route, thereby performing high quality image recording. The inkjet recording apparatus includes a first flow path configured to supply ink from an ink tank to a first discharge port group, a second flow path configured to supply ink from the ink tank to a second discharge port group, and a control unit configured to control an ink supply amount of at least one of the first flow path and the second flow path according to the passing position of a recording medium with respect to the line head.Type: GrantFiled: October 24, 2012Date of Patent: February 10, 2015Assignee: Canon Kabushiki KaishaInventors: Hiroyuki Tanaka, Yuji Kanome, Yoshiaki Suzuki, Masahiro Sugimoto, Seiji Suzuki, Susumu Hirosawa, Takeaki Nakano
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Patent number: 8939547Abstract: A holder that holds a line recording head is displaced in a sheet width direction against the urging force of an elastic portion to bring an abutment portion of the holder into contact with one of a plurality of positioning surfaces provided at a reference portion of a sheet conveying mechanism. The holder is positioned and fixed to the reference portion, with the urging force exerted thereto.Type: GrantFiled: December 10, 2010Date of Patent: January 27, 2015Assignee: Canon Kabushiki KaishaInventors: Akira Kida, Masahiro Sugimoto, Masaharu Ueda
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Publication number: 20150024943Abstract: A compound superconducting wire 10 includes a reinforcement portion 12 and a compound superconductor 11. In the reinforcement portion 12, an assembly of plural reinforcement elements 4 are disposed. The reinforcement elements 4 each include plural reinforcement filaments 1 disposed in a stabilizer 2, and a stabilizing layer 3 at the outer periphery thereof. The reinforcement filaments 1 each mainly contain one or more metals selected from the group consisting of Nb, Ta, V, W, Mo, Fe, and Hf, an alloy consisting of two or more metals selected from the aforementioned group, or an alloy consisting of copper and one or more metals selected from the aforementioned group.Type: ApplicationFiled: October 9, 2014Publication date: January 22, 2015Inventors: Masahiro SUGIMOTO, Hirokazu TSUBOUCHI, Kazuo WATANABE, Satoshi AWAJI, Hidetoshi OGURO
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Publication number: 20140339569Abstract: A semiconductor device formed on a silicon carbide substrate that has a front surface on which an electrode is provided and a back surface on which an electrode is provided includes a drain layer, a drift layer, a base layer, a gate electrode that is located in a trench that extends from the front surface into the drift layer and is insulated by an insulating film, a some layer, a buried layer that is provided between the drift layer and the base layer and is formed such that the depth from the front surface to an end thereof on the side of the drift layer is greater than the depth from the front surface to a distal end of the trench, and a first epitaxial layer that is provided between the buried layer and the base layer and has a higher impurity concentration than the buried layer.Type: ApplicationFiled: April 25, 2014Publication date: November 20, 2014Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Masahiro SUGIMOTO, Yuichi TAKEUCHI
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Patent number: 8876251Abstract: An apparatus includes a supply unit having a humidifying portion that supplies humidified gas near a nozzle array of a line-type recording head. In correspondence to displacement of the recording head in a direction of the nozzle array, at least one of an introducing direction and an introducing position of the supplied humidified gas can be changed.Type: GrantFiled: October 1, 2010Date of Patent: November 4, 2014Assignee: Canon Kabushiki KaishaInventors: Masahiro Sugimoto, Akira Kida, Susumu Hirosawa, Takeaki Nakano, Hiroyuki Tanaka, Seiji Suzuki, Yoshiaki Suzuki, Yuji Kanome
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Publication number: 20140319540Abstract: A semiconductor device is provided with a semiconductor substrate in which a power semiconductor element part and a temperature sensing diode part are provided. The temperature sensing diode part includes a first semiconductor region, a second semiconductor region, a first base region, and a first drift region. In the semiconductor substrate, an isolation trench is formed, which passes through the first base region, extends to the first drift region, and surrounds an outer periphery of the temperature sensing diode part. At least a part of one of side walls of the isolation trench is in contact with the power semiconductor element part, and the other side wall of the isolation trench is in contact with the temperature sensing diode part.Type: ApplicationFiled: April 22, 2014Publication date: October 30, 2014Applicants: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHAInventor: Masahiro SUGIMOTO
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Publication number: 20140319577Abstract: A semiconductor device disclosed in this specification includes a p+ contact region, an n+ source region, a p? base region, an n? drift region, a gate electrode, an insulator, a p+ electric field alleviating layer, and a p? positive hole extraction region. The electric field alleviating layer has same impurity concentration as the base region or higher, contacts a lower surface of the base region, and is formed in a same depth as the gate trench or in a position deeper than the gate trench. A positive hole extraction region extends to contact the electric field alleviating layer from a position to contact an upper surface of a semiconductor substrate or a first semiconductor region, and extracts a positive hole that is produced in the electric field alleviating layer at the avalanche breakdown to the upper surface of the semiconductor substrate.Type: ApplicationFiled: April 3, 2014Publication date: October 30, 2014Applicants: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Masahiro SUGIMOTO, Yuichi Takeuchi
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Publication number: 20140307020Abstract: In the case of performing duplex printing on a continuous sheet, by setting a length of a non-image area to an optimum length, both of mark detection having high reliability and the suppression of a sheet consumption amount are achieved. For this purpose, when duplex printing of a plurality of images on front and back surfaces of the continuous sheet is performed, on the basis of a length of the image to be printed precedently to a non-image area W3 on the second surface, the length of the non-image area common to the front and back surface is set.Type: ApplicationFiled: April 11, 2014Publication date: October 16, 2014Applicant: CANON KABUSHIKI KAISHAInventors: Shigeru Toriihara, Masahito Yoshida, Masahiro Sugimoto, Seiji Suzuki
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Publication number: 20140274726Abstract: A method for producing a composite superconductor includes: a structure forming process of forming a structure including a metal covering member (20) including at least one to-be-joined portion, a superconductor (30) arranged inside the metal covering member, and a reinforcing member (40) arranged between the superconductor (30) and the at least one to-be-joined portion; and a joining process of joining thereafter the at least one to-be-joined portion.Type: ApplicationFiled: September 4, 2012Publication date: September 18, 2014Applicants: INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION NATIONAL INSTITUTES OF NATURAL SCIENCES, FURUKAWA ELECTRIC CO., LTD.Inventors: Masahiro Sugimoto, Hirokazu Tsubouchi, Hitoshi Shimizu, Toshiya Okada, Toshirou Sakai, Kazuya Takahata, Hitoshi Tamura, Toshiyuki Mito
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Patent number: 8833902Abstract: An apparatus includes a recording head having a sealing portion arranged in proximity to nozzle arrays and protruding beyond a nozzle surface. A wiper unit configured to wipe the nozzle surface of the recording head has a first wiper blade and a second wiper blade, and the first wiper blade is arranged to be inclined by an angle ?1 (?1>0) with respect to a direction orthogonal to the wiping direction within a plane parallel to the nozzle surface, while the second wiper blade is arranged to be inclined by an angle ?2 (?2<0) with respect to the direction orthogonal to the wiping direction within the plane.Type: GrantFiled: November 8, 2010Date of Patent: September 16, 2014Assignee: Canon Kabushiki KaishaInventors: Takaya Sato, Yuji Kanome, Hiroyuki Tanaka, Yoshiaki Suzuki, Masahiro Sugimoto, Seiji Suzuki, Susumu Hirosawa, Takeaki Nakano
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Patent number: 8827412Abstract: A printing apparatus includes a cooling unit configured to actively cool a sheet, a humidification unit configured to increase a moisture content of the sheet by supplying a humidified gas onto the sheet, and an inkjet print head configured to perform printing on the sheet having a moisture content increased by the humidification unit.Type: GrantFiled: October 18, 2012Date of Patent: September 9, 2014Assignee: Canon Kabushiki KaishaInventors: Yuji Kanome, Takashi Horiba, Masahiro Sugimoto, Kanto Kurasawa, Hikaru Watanabe
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Publication number: 20140231827Abstract: A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming a Schottky electrode in a second area on the one of the main surfaces of the silicon carbide layer with self alignment. The second area is exposed where the ohmic electrode is not formed.Type: ApplicationFiled: December 26, 2013Publication date: August 21, 2014Applicants: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Yukihiko WATANABE, Sachiko AOI, Masahiro SUGIMOTO, Akitaka SOENO, Shinichiro MIYAHARA
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Patent number: 8810842Abstract: A printer includes a storage portion, a printing portion, and a processor. The processor is configured to control the printer to cause the storage portion to store job identification information and device identification information that have been received from the device, cause the printing portion to perform printing based on the printing data that have been received from the device, specify a printing result for the printing job and transmit a result information record to the device that has transmitted a request command. The result information record includes the specified printing result and also includes the job identification information and the device identification information that are stored in the storage portion, to the device that has transmitted a request command.Type: GrantFiled: March 14, 2013Date of Patent: August 19, 2014Assignee: Brother Kogyo Kabushiki KaishaInventors: Yoshitsugu Tomomatsu, Masahiro Sugimoto
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Publication number: 20140175459Abstract: A SiC semiconductor device includes: a semiconductor switching element having: a substrate, a drift layer and a base region stacked in this order; a source region and a contact region in the base region; a trench extending from a surface of the source region to penetrate the base region; a gate electrode on a gate insulating film in the trench; a source electrode electrically coupled with the source region and the base region; a drain electrode on a back side of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has upper and lower portions. A width of the upper portion is smaller than the lower portion.Type: ApplicationFiled: February 6, 2012Publication date: June 26, 2014Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Kensaku Yamamoto, Masato Noborio, Hideo Matsuki, Hidefumi Takaya, Masahiro Sugimoto, Narumasa Soejima, Tsuyoshi Ishikawa, Yukihiko Watanabe
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Publication number: 20140175518Abstract: A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm?3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.Type: ApplicationFiled: February 27, 2014Publication date: June 26, 2014Applicant: Toyota Jidosha Kabushiki KaishaInventors: Masahiro Sugimoto, Tetsu Kachi, Yoshitaka Nakano, Tsutomu Uesugi, Hiroyuki Ueda, Narumasa Soejima
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Patent number: 8716121Abstract: An ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a Ti(1-x-y)Si(x)C(y) ternary film of which a composition ratio is within a composition range that is surrounded by two lines and two curves expressed by an expression x=0 (0.35?y?0.5), an expression y=?1.120x+0.5200 (0.1667?x?0.375), an expression y=1.778(x?0.375)2+0.1 (0?x?0.375) and an expression y=?2.504x2?0.5828x+0.5 (0?x?0.1667) and that excludes the line expressed by the expression x=0. The ohmic layer is directly laminated on a surface of a p-type SiC semiconductor.Type: GrantFiled: August 4, 2010Date of Patent: May 6, 2014Assignee: Toyota Jidosha Kabushiki KaishaInventors: Akinori Seki, Masahiro Sugimoto, Akira Kawahashi, Yasuo Takahashi, Masakatsu Maeda
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Patent number: 8710586Abstract: A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.Type: GrantFiled: September 12, 2011Date of Patent: April 29, 2014Assignees: DENSO CORPORATION, Toyota Jidosha Kabushiki KaishaInventors: Toshimasa Yamamoto, Masahiro Sugimoto, Hidefumi Takaya, Jun Morimoto, Narumasa Soejima, Tsuyoshi Ishikawa, Yukihiko Watanabe
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Patent number: 8633101Abstract: A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.Type: GrantFiled: September 2, 2010Date of Patent: January 21, 2014Assignee: Toyota Jidosha Kabushiki KaishaInventors: Masahiro Sugimoto, Akinori Seki, Akira Kawahashi, Yasuo Takahashi, Masakatsu Maeda
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Patent number: 8618555Abstract: The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench.Type: GrantFiled: May 27, 2011Date of Patent: December 31, 2013Assignees: DENSO CORPORATION, Toyota Jidosha Kabushiki KaishaInventors: Naohiro Suzuki, Hideo Matsuki, Masahiro Sugimoto, Hidefumi Takaya, Jun Morimoto, Tsuyoshi Ishikawa, Narumasa Soejima, Yukihiko Watanabe
