Abstract: An apparatus includes a humidifying unit that generates humidified gas, a drying unit that dries ink applied to a sheet by a recording unit, a first duct that supplies gas discharged from the drying unit to at least one of the humidifying unit and the recording unit, and a second duct that supplies the humidified gas generated by the humidifying unit to the recording unit.

Abstract: An apparatus includes a recording head arranged so as to oppose a sheet moving in a first direction, in which a plurality of first nozzle chips and a plurality of second nozzle chips each having a nozzle array are arranged as different arrays in a second direction crossing the first direction, and in which the first nozzle chips and the second nozzle chips adjacent to each other are shifted from each other in the second direction, a first suction unit opposed to the first nozzle chips and configured to suction ink from a part of the nozzle arrays included in the first nozzle chips, a second suction unit opposed to the second nozzle chips and configured to suction ink from a part of the nozzle arrays included in the second nozzle chips, a suction holder configured to retain the first suction unit and the second suction unit, and a movement mechanism configured to cause relative movement between the recording head and the suction holder in the second direction, wherein the first suction unit and the second suct

Abstract: An apparatus includes a supply unit having a humidifying portion that supplies humidified gas near a nozzle array of a line-type recording head. In correspondence to displacement of the recording head in a direction of the nozzle array, at least one of an introducing direction and an introducing position of the supplied humidified gas can be changed.

Abstract: A supply unit is provided to supply humidified gas near a nozzle array of a line-type recording head. The flow-rate distribution of the supplied humidified gas in a direction of the nozzle array is changeable in accordance with a conveying region where a sheet is conveyed while opposing the nozzle array.

Abstract: An apparatus includes a recording head having a sealing portion arranged in proximity to nozzle arrays and protruding beyond a nozzle surface. A wiper unit configured to wipe the nozzle surface of the recording head has a first wiper blade and a second wiper blade, and the first wiper blade is arranged to be inclined by an angle ?1 (?1>0) with respect to a direction orthogonal to the wiping direction within a plane parallel to the nozzle surface, while the second wiper blade is arranged to be inclined by an angle ?2 (?2<0) with respect to the direction orthogonal to the wiping direction within the plane.

Abstract: A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained at a temperature that is higher than or equal to a first temperature and lower than a second temperature until all Ti in the Ti-layer has reacted with Al. The first temperature is the minimum temperature of a temperature zone at which the Ti reacts with the Al to form Al3Ti, and the second temperature is the minimum temperature of a temperature zone at which the Al3Ti reacts with SiC to form Ti3SiC2. As a result of this maintaining of temperature step, an Al3Ti-layer is formed on the surface of the SiC substrate. The method also comprises further heating the SiC substrate having the Al3Ti-layer to a temperature that is higher than the second temperature.

Abstract: A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm?3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.

Abstract: A semiconductor device 10 comprises a heterojunction between a lower semiconductor layer 26 made of p-type gallium nitride and an upper semiconductor layer 28 made of n-type AlGaN, wherein the upper semiconductor layer 28 has a larger band gap than the lower semiconductor layer 26. The semiconductor device 10 further comprises a drain electrode 32 formed on a portion of a top surface of the upper semiconductor layer 28, a source electrode 34 formed on a different portion of the top surface of the upper semiconductor layer 28, and a gate electrode 36 electrically connected to the lower semiconductor layer 26. The semiconductor device 10 can operate as normally-off.

Abstract: Disclosed is a composite superconductor comprising a superconductor and a metal member. The metal member is composed of one or more members to be joined together in such manner that the one or more members cover the superconductor, and at least one member is made of aluminum or an aluminum alloy.

Abstract: The present invention provides a novel oral cancer and periodontal disease salivary metabolome for use in the diagnosis or for providing a prognosis for oral cancer and periodontal disease in an individual. The present invention also provides novel methods of diagnosing or providing a prognosis for oral cancer or periodontal disease by detecting metabolites found in the saliva of an individual. Finally, the present invention provides kits for the detection of salivary metabolites useful in the diagnosis or prognosis of oral cancer and periodontal disease in an individual.

Abstract: A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm?3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.

Abstract: A semiconductor device 10 is provided with a first hetero junction 40b configured with two types of nitride semiconductors having different bandgap energy from each other, a second hetero junction 50b configured with two types of nitride semiconductors having different bandgap energy from each other, and a gate electrode 58 facing the second hetero junction 50b. The second hetero junction 50b is configured to be electrically connected to the first hetero junction 40b. The first hetero junction 40b is a c-plane and the second hetero junction 50b is either an a-plane or an m-plane.

Abstract: A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.

Abstract: The invention provides a method for producing a group III nitride based semiconductor having a reduced number of crystal defects. A GaN layer 2 is epitaxially grown on a sapphire substrate 1 having C-plane as a main plane (FIG. 1A). Then, the layer is wet-etched by use of a 25% aqueous TMAH solution at 85° C. for one hour, to thereby form an etch pit 4 (FIG. 1B). Then, a GaN layer 5 is grown on the GaN layer 2 through the ELO method (FIG. 1C). The thus-formed GaN layer 5 has a screw dislocation density lower than that of the GaN layer 2.

Abstract: This disclosure discloses an RFID tag communication apparatus capable of communicating with a plurality of RFID circuit elements, each of the RFID circuit elements having a tag antenna that transmits and receives information and an IC circuit part that stores information, comprising: a communication antenna that forms a communication range that includes said RFID circuit elements and performs wireless communication; at least one information acquisition device that attempts to acquire tag identification information from said RFID circuit elements positioned within said communication range by selectively using a plurality of communication protocols different from each other; and a storage processing device that performs predetermined storage processing with respect to a plurality of tag identification information with associating with each communication protocol, said plurality of tag identification information being acquired by said at least one information acquisition device with using said plurality of commu

Abstract: A nitride semiconductor device 2 comprises a nitride semiconductor layer 10. A gate insulating film 16 is formed on the surface of the nitride semiconductor layer 10. The gate insulating film 16 includes a portion composed of an aluminum nitride film 15 and a portion composed of an insulating material 14 that contains at least one of oxygen or silicon. A region W2 of the nitride semiconductor layer 10 facing the aluminum nitride film 15 is included in a region W1 of the nitride semiconductor layer 10 facing a gate electrode 18. The nitride semiconductor device 2 may further comprise a nitride semiconductor lower layer 8. The nitride semiconductor layer 10 may be stacked on the surface of the nitride semiconductor lower layer 8. The nitride semiconductor layer 10 may have a larger band gap than that of the nitride semiconductor lower layer 8 and have a heterojunction formed there between.

Abstract: An HEMT type transistor is disclosed that is a normally off type, and in which variations in the gate threshold voltage are small. A transistor is provided with a p-type region, a barrier region, an insulation film, a gate electrode. The channel region is connected to an upper surface of the p-type region. The channel region is n-type or i-type and provided with a first channel region and a second channel region. The barrier region is forming a hetero-junction with an upper surface of the first channel region. The insulation film is connected to an upper surface of the second channel region and an upper surface of the barrier region. The gate electrode faces the second channel region and the barrier region via the insulation film. The first channel region and the second channel region are arranged in series in a current pathway.

Abstract: A semiconductor device has a semiconductor substrate having a surface layer and a p-type semiconductor region, wherein the surface layer includes a contact region, a channel region and a drift region, the channel region is adjacent to and in contact with the contact region, the drift region is adjacent to and in contact with the channel region and includes n-type impurities at least in part, and the p-type semiconductor region is in contact with the drift region and at least a portion of a rear surface of the channel region, a main electrode disposed on the surface layer and electrically connected to the contact region, a gate electrode disposed on the surface layer and extending from above a portion of the contact region to above at least a portion of the drift region via above the channel region, and an insulating layer covering at least the portion of the contact region and not covering at least the portion of the drift region.

Abstract: A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained at a temperature that is higher than or equal to a first temperature and lower than a second temperature until all Ti in the Ti-layer has reacted with Al. The first temperature is the minimum temperature of a temperature zone at which the Ti reacts with the Al to form Al3Ti, and the second temperature is the minimum temperature of a temperature zone at which the Al3Ti reacts with SiC to form Ti3SiC2. As a result of this maintaining of temperature step, an Al3Ti-layer is formed on the surface of the SiC substrate. The method also comprises further heating the SiC substrate having the Al3Ti-layer to a temperature that is higher than the second temperature.

Abstract: A personal computer identifies a target of a printing error in a printer. At this time, the personal computer identifies the target of the printing error in the printer as a print file, based on an identification code obtained together with status information which represents error information. The personal computer waits for the printer to restore the error. The personal computer determines whether or not the printer has restored the error based on the status information obtained from the printer on a regular basis or when driven by some event. Next, the personal computer retransmits the print file thus identified to the printer. Alternatively, the printer re-receives the print file.