Abstract: A nonvolatile semiconductor memory device having a large storage capacity and stabilized rewriting conditions in which a memory cell includes a nonvolatile recording material layer, a selector element and a semiconductor layer provided between the nonvolatile recording material layer and the selector element and having a thickness ranging from 5 to 200 nm.

Abstract: To achieve stable, high capacity, high speed recording. Of two light beams emitted from a light irradiation means, one or two beams are made pass through an optical path changeable member whereof at least one of the thickness and refractive index changes continuously or in two or more steps immediately after emission from the light irradiation means, so that a difference is introduced into the optical path length of the two beams, and the focusing point of one beam is made to vary to coincide with a position in the recording layer used for playback or recording. Another light beam is used for servo. Converging of light during recording or read of a multilayer recording medium is performed with higher precision than in the prior art, so higher density, higher capacity recording/playback can be performed.

Abstract: A phase-change memory device including a memory cell having a memory element and a select transistor is improved in heat resistance so that it may be operable at 145° C. or higher. The memory layer is used which has a content of Zn or Cd of 20 at % or more and 50 at % or less, a content of Ge or Sb of 5 at % or more and 25 at % or less, and a content of Te of 40 at % or more and 65 at % or less in Zn-Ge-Te.

Abstract: A recording medium including a plurality of recording layers, including: an optional first recording layer on which a light spot at a diffraction limit is formed; and a second recording layer on which a mark string pattern is formed, said second recording layer being different from said first recording layer, wherein when said mark string pattern is formed on a light receiving plane, while information of said first recording layer is reproduced, assuming that an optical distance between said first and second recording layers is dm, an optical distance d between optional two recording layers among a plurality of said recording layers is different from said dm.

Abstract: Recording information is disclosed in which an information recording medium is irradiated with a recording energy beam that is power-modulated into at least a record power level and a record-ready power level lower than the record power level. The information is recorded on the recording medium in the form of length and interval of a mark portion. When forming a mark portion of a predetermined length, the radiation energy of the energy beam is increased as compared with when forming a mark portion of a different length before or after the first pulse of an energy beam pulse train including at least a pulse for forming the mark portion.

Abstract: The performance of a semiconductor device capable of storing information is improved. A memory layer of a memory element is formed by a first layer at a bottom electrode side and a second layer at a top electrode side. The first layer contains 20-70 atom % of at least one element of a first element group of Cu, Ag, Au, Al, Zn, and Cd, contains 3-40 atom % of at least one element of a second element group of V, Nb, Ta, Cr, Mo, W, Ti, Zr, Hf, Fe, Co, Ni, Pt, Pd, Rh, Ir, Ru, Os, and lanthanoid elements, and contains 20-60 atom % of at least one element of a third element group of S, Se, and Te. The second layer contains 5-50 atom % of at least one element of the first element group, 10-50 atom % of at least one element of the second element group, and 30-70 atom % of oxygen.

Abstract: On an insulating film (31) in which a plug (35) is embedded, a second component releasing region (45) made of a first component and a second component, a solid electrolyte region (46) made of chalcogenide and an upper electrode region (47) are sequentially formed. The second component releasing region (45) made of a first component and a second component is composed of dome-shaped electrode portions (43) and an insulating film (44) burying the peripheries of the electrode portions (43), and at least one electrode portion (43) exists on the plug (34). The electrode portion (43) is composed of a first portion made of the first component such as tantalum oxide that is stable even when electric field is applied thereto and a second portion made of the second component such as copper or silver that is easily diffused in the solid electrolyte region (42) and moves therein by the application of an electric field.

Abstract: In a non-volatile phase change memory, information is recorded by utilizing a change in resistance of a phase change portion. When the phase change portion is allowed to generate Joule's heat and is held at a specific temperature, it goes into a state of a low resistance. When the gate voltage of a memory cell selection transistor QM is controlled to afford a low resistance state, the maximum amount of current applied to the phase change portion is limited by the application of a medium-state voltage to the control gate, thereby avoiding overheating of the phase change portion.

Abstract: Recording information is disclosed in which an information recording medium is irradiated with a recording energy beam that is power-modulated into at least a record power level and a record-ready power level lower than the record power level. The information is recorded on the recording medium in the form of length and interval of a mark portion. When forming a mark portion of a predetermined length, the radiation energy of the energy beam is increased as compared with when forming a mark portion of a different length before or after the first pulse of an energy beam pulse train including at least a pulse for forming the mark portion.

Abstract: A nonvolatile, sophisticated semiconductor device with a small surface area and a simple structure capable of switching connections between three or more electrodes. In a semiconductor device at least one of the electrodes contains atoms such as copper or silver in the solid electrolyte capable of easily moving within the solid electrolyte, and those electrodes face each other and applying a voltage switches the voltage on and off by generating or annihilating the conductive path between the electrodes. Moreover applying a voltage to a separate third electrode can annihilate the conductive path formed between two electrodes without applying a voltage to the two electrode joined by the conductive path.

Abstract: A technique that can realize high integration even for multilayered three-dimensional structures at low costs by improving the performance of the semiconductor device having recording or switching functions by employing a device structure that enables high precision controlling of the movement of ions in the solid electrolyte. The semiconductor element of the device is formed as follows; two or more layers are deposited with different components respectively between a pair of electrodes disposed separately in the vertical (z-axis) direction, then a pulse voltage is applied between those electrodes to form a conductive path. The resistance value of the path changes according to an information signal. Furthermore, a region is formed at a middle part of the conductive path. The region is used to accumulate a component that improves the conductivity of the path, thereby enabling the resistance value (rate) to response currently to the information signal.

Abstract: With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.

Abstract: Recording information is disclosed in which an information recording medium is irradiated with a recording energy beam that is power-modulated into at least a record power level and a record-ready power level lower than the record power level. The information is recorded on the recording medium in the form of length and interval of a mark portion. When forming a mark portion of a predetermined length, the radiation energy of the energy beam is increased as compared with when forming a mark portion of a different length before or after the first pulse of an energy beam pulse train including at least a pulse for forming the mark portion.

Abstract: Recording information is disclosed in which an information recording medium is irradiated with a recording energy beam that is power-modulated into at least a record power level and a record-ready power level lower than the record power level. The information is recorded on the recording medium in the form of length and interval of a mark portion. When forming a mark portion of a predetermined length, the radiation energy of the energy beam is increased as compared with when forming a mark portion of a different length before or after the first pulse of an energy beam pulse train including at least a pulse for forming the mark portion.

Abstract: The present invention relates to an information-recording medium for recording and reproducing information by using light and a method for recording information for the purpose of high-speed and high-density recording. The medium has a structural unit having a conductive polymer layer and an electrolyte layer sandwiched by a pair of electrode layers, each of which contains a thermally decomposable or crosslinkable compound. The medium described above allows high-speed rotation of the medium as it has a narrower range heated during recording and is more tolerant of displacement of auto-focusing or tracking, and also allows high-speed and high-density recording. The medium also allows lamination of multiple layers and easier selection of layers therein.

Abstract: Disclosed herewith is a method for enabling fast and high density recording of information. A voltage is applied to a recording layer formed between a pair of electrodes. The distance between the pair of electrodes is set wider at one of land and groove areas of a subject optical disk and narrower at the other or the distance is set so that light absorption occurs only in either of the land and groove areas. The optical disk is also provided with a layer of which light absorption spectrum changes according to the application of an electric current, thereby absorbing the light. The new layer may be the recording layer itself or a layer adjacent to the recording layer. Because a heat generates only from a small area of the optical disk at the time of recording, the disk can be turned rapidly and permissively to the auto focusing and tracking offsets, thereby enabling fast and high density recording. The disk can thus be formed with easily selectable multiple layers.

Abstract: Recording information is disclosed in which an information recording medium is irradiated with a recording energy beam that is power-modulated into at least a record power level and a record-ready power level lower than the record power level. The information is recorded on the recording medium in the form of length and interval of a mark portion. When forming a mark portion of a predetermined length, the radiation energy of the energy beam is increased as compared with when forming a mark portion of a different length before or after the first pulse of an energy beam pulse train including at least a pulse for forming the mark portion.

Abstract: Recording information is disclosed in which an information recording medium is irradiated with a recording energy beam that is power-modulated into at least a record power level and a record-ready power level lower than the record power level. The information is recorded on the recording medium in the form of length and interval of a mark portion. When forming a mark portion of a predetermined length, the radiation energy of the energy beam is increased as compared with when forming a mark portion of a different length before or after the first pulse of an energy beam pulse train including at least a pulse for forming the mark portion.

Abstract: Recording information is disclosed in which an information recording medium is irradiated with a recording energy beam that is power-modulated into at least a record power level and a record-ready power level lower than the record power level. The information is recorded on the recording medium in the form of length and interval of a mark portion. When forming a mark portion of a predetermined length, the radiation energy of the energy beam is increased as compared with when forming a mark portion of a different length before or after the first pulse of an energy beam pulse train including at least a pulse for forming the mark portion.

Abstract: The magnetic recording medium provided is produced by forming a substrate having a nanoparticle layer comprising an array of nanoparticles, and an organic compound between said array of nanoparticles; irradiating the nanoparticle layer with an infrared beam to magnetize the nanoparticles; applying a magnetic field to the nanoparticle layer to orient easy axis of magnetization of the magnetic nanoparticles in a substantially uniform direction; and irradiating the nanoparticle layer with an ultraviolet beam to bind said organic compound to thereby produce a magnetic recording medium wherein easy axis of magnetization of the nanoparticles has been oriented in a direction substantially parallel to a direction at a particular angle with the substrate. The resulting magnetic recording medium experiences no deterioration of the underlying layer or the soft magnetic layer, and exhibits good magnetic properties.