Abstract: A method for manufacturing a display device includes: connecting a first printed circuit board and a second printed circuit board with a first connecting film, the first printed circuit board and the second printed circuit board configured to apply a driving signal to a display panel; attaching a fixing member to the first printed circuit board and the second printed circuit board, such that the first connecting film extends away from the display panel and the first printed circuit board is spaced apart from the display panel; attaching the second printed circuit board to the display panel with second connecting films; removing the fixing member; and attaching the first printed circuit board to the display panel.

Abstract: A method of driving a light-source module includes adjusting a frequency of a boosting switching signal based on a dimming signal which controls luminance of a light-emitting diode (“LED”) string of the light-source module, where the LED string comprises a plurality of LEDs connected to each other in series, and controlling a main transistor in response to the boosting switching signal to transfer a driving voltage to the LED string.

Abstract: A semiconductor device, which may be included in a display driver integrated circuit (IC) and a display device, includes a first interconnection and a second interconnection extending on a substrate and separate from each other, a third interconnection extending at a first level that is higher than a level at which the first interconnection and the second interconnection are disposed, and a fourth interconnection extending at a second level that is higher than the first level. A first contact plug is configured to connect the first interconnection and the third interconnection to each other. A stacked contact plug includes a second contact plug and a third contact plug, wherein the second contact plug is connected to the second interconnection, and the third contact plug is connected to the second contact plug and the fourth interconnection.

Abstract: A backlight unit includes a power converter configured to generate a light source driving voltage in response to a voltage control signal, a plurality of light emitting diode strings, where each of the light emitting diode strings receives the light source driving voltage through a first terminal thereof, a plurality of transistors corresponding to the light emitting diode strings, where each of the transistors includes: a first electrode connected to a second terminal of a corresponding light emitting diode string thereof; a second electrode; and a control electrode, and a controller connected to the control electrode and the second electrode, where the controller outputs a plurality of current control signals to control electrodes of the transistors and generate the voltage control signal, where the controller generates an over-current detection signal when any one of the current control signals has a pulse width less than a predetermined reference width.

Abstract: A display apparatus includes a plurality of pixels arranged in columns and rows in a display area, a data line extending in a first direction and connected with pixels of a k-th column (‘k’ is a natural number) and a (k+1)-th column, a gate line extending in a second direction crossing the first direction and connected with ones of the pixels, a gate signal line extending in the first direction and connected with the gate line, and a gate driver in a first peripheral area adjacent to a first longer side of the display area and having a first width, and configured to apply a gate signal to the gate line.

Abstract: A semiconductor device, which may be included in a display driver integrated circuit (IC) and a display device, includes a first interconnection and a second interconnection extending on a substrate and separate from each other, a third interconnection extending at a first level that is higher than a level at which the first interconnection and the second interconnection are disposed, and a fourth interconnection extending at a second level that is higher than the first level. A first contact plug is configured to connect the first interconnection and the third interconnection to each other. A stacked contact plug includes a second contact plug and a third contact plug, wherein the second contact plug is connected to the second interconnection, and the third contact plug is connected to the second contact plug and the fourth interconnection.

Abstract: Semiconductor devices are provided. The semiconductor device includes a bit line contact plug and a storage node contact plug electrically connected to an active region of a substrate. A bit line structure is disposed on the bit line contact plug to extend in a first direction. The bit line structure is disposed in a trench pattern that intrudes into a side of the storage node contact plug. Related methods and systems are also provided.

Abstract: A method of fabricating a pattern comprising sequentially forming a pattern formation layer and a neutral layer on over a substrate having in a first regions and a second regions, forming guide patterns on first portions of over the neutral layer in the second regions, forming a first block copolymer layers on over second portions of the neutral layer in the first regions, phase-separating the tint block copolymer layers such that each of the first block copolymer layers includes to form first polymer blocks having a first phase and first polymer blocks having a second phase, removing the guide patterns to form openings that expose the first portions of the neutral layer in the second region, forming a second block copolymer layer on over the phase-separated first block copolymer layers and in the openings, phase-separating the second block copolymer layer into to form second polymer blocks having the first phase and second polymer blocks having the second phase removing the second polymer blocks having the s

Abstract: Semiconductor devices are provided. The semiconductor device includes a bit line contact plug and a storage node contact plug electrically connected to an active region of a substrate. A bit line structure is disposed on the bit line contact plug to extend in a first direction. The bit line structure is disposed in a trench pattern that intrudes into a side of the storage node contact plug. Related methods and systems are also provided.

Abstract: Methods of forming fine patterns are provided. The method includes reinforcing a hydrophobic property of a hard mask layer using a surface treatment process to form a neutral layer, forming a block co-polymer layer on the neutral layer, and phase-separating the block co-polymer layer into first domains and second domains.

Abstract: A fine pattern structure includes a layer having or including alternating protrusion portions and recess portions, polymer patterns disposed in recess regions formed by the recess portions, brush patterns disposed on top surfaces of the protrusion portions, and a block co-polymer layer including first polymer block patterns formed on the brush patterns and second polymer block patterns formed on the polymer patterns.

Abstract: A fine pattern structure includes a layer having or including alternating protrusion portions and recess portions, polymer patterns disposed in recess regions formed by the recess portions, brush patterns disposed on top surfaces of the protrusion portions, and a block co-polymer layer including first polymer block patterns formed on the brush patterns and second polymer block patterns formed on the polymer patterns.

Abstract: A fine pattern structure includes a lower hard mask layer on a pattern formation layer having a first region and a second region, first upper hard mask patterns disposed on the lower hard mask layer in the first region to expose portions of the lower hard mask layer, a second upper hard mask pattern covering the lower hard mask layer in the second region, guide patterns on the first and second upper hard mask patterns, neutralization patterns on the exposed portions of the lower hard mask layer in the first region, a first block co-polymer layer covering the guide patterns in the first region and the neutralization patterns, and a second block co-polymer layer covering the guide pattern in the second region.

Abstract: A semiconductor device includes a substrate and a plurality of active pillars disposed on the substrate and spaced apart from each other by trenches. Each of the active pillars includes a buried metal silicide pattern and an active region stacked on the buried metal silicide pattern, and the active region includes impurity junction regions.

Abstract: A method of fabricating a pattern comprising sequentially forming a pattern formation layer and a neutral layer on over a substrate having in a first regions and a second regions, forming guide patterns on first portions of over the neutral layer in the second regions, forming a first block copolymer layers on over second portions of the neutral layer in the first regions, phase-separating the tint block copolymer layers such that each of the first block copolymer layers includes to form first polymer blocks having a first phase and first polymer blocks having a second phase, removing the guide patterns to form openings that expose the first portions of the neutral layer in the second region, forming a second block copolymer layer on over the phase-separated first block copolymer layers and in the openings, phase-separating the second block copolymer layer into to form second polymer blocks having the first phase and second polymer blocks having the second phase removing the second polymer blocks having the s

Abstract: A method for manufacturing a display device includes: connecting a first printed circuit board and a second printed circuit board with a first connecting film, the first printed circuit board and the second printed circuit board configured to apply a driving signal to a display panel; attaching a fixing member to the first printed circuit board and the second printed circuit board, such that the first connecting film extends away from the display panel and the first printed circuit board is spaced apart from the display panel; attaching the second printed circuit board to the display panel with second connecting films; removing the fixing member; and attaching the first printed circuit board to the display panel.

Abstract: A method for fine pattern structures includes forming a pattern formation layer over a first region and a second region of a substrate, forming a first block co-polymer layer in the first region, forming a second block co-polymer layer in the second region, etching the first and second block co-polymer layers, and forming the fine pattern structure in the pattern formation layer in the first region without forming a pattern in the pattern formation layer in the second region.