Abstract: Provided is a large-capacity metal catalyst support and a catalytic converter using the same, in which a number of unit catalyst support blocks are changed in a form of being effectively assembled so as to be applied to a catalytic converter that is required for processing a large amount of exhaust gas such as large vessels or plants employing a number of large-scale internal combustion engines, or large food processing devices, to thus easily assemble the unit catalyst support blocks into a large-scale assembled structure. The catalyst support includes: a number of unit catalyst support blocks in which cell formation bodies formed of a number of hollow cells that are aligned in a longitudinal direction are accommodated and stacked in a polygonal supporter wherein a catalyst is coated on the surfaces of the hollow cells; and a number of assembly members each for fixing a pair of adjacent supports that mutually contact between the stacked unit catalyst support blocks.

Abstract: A balance board includes; a substrate, a first wire disposed on the substrate, a second wire disposed on the substrate and spaced apart from the first wire, a plurality of first balance coils connected to the first wire and which uniformly distribute a first power supply voltage, a plurality of second balance coils connected to the second wire and which uniformly distribute a second power supply voltage, and a conductive pattern disposed on the substrate and spaced apart from the first and second wires, wherein the first and second wires are disposed substantially in parallel with each other, the second wire being divided into a plurality of parts with respect to an area where the first wire and the second wire cross over one another and the plurality of parts of the second wire are connected by a plurality of jumper connectors overlapping the first wire.

Abstract: A transistor, transistor arrangement and method thereof are provided. The example method may include determining whether a gate width of the transistor has been adjusted; and adjusting a distance between a higher-concentration impurity-doped region of the transistor and a device isolation layer of the transistor based on the adjusted gate width if the determining step determines the gate width of the transistor is adjusted. The example transistor may include a first device isolation layer defining a first active region, a first gate line having a first gate width and crossing over the first active region, a first lower-concentration impurity-doped region formed in the first active region at first and second sides of the first gate line and a first higher-concentration impurity-doped region formed in the lower-concentration impurity-doped region and not in contact with the gate line and the device-isolation layer.

Abstract: A conductor base coupled to a finger module of an air circuit breaker. Since the connector of the conductor base has the curved surface formed on a side of an end portion thereof and tooth-coupled with the contactor of the finger module, the contactor of the finger module has another curved surface corresponding to the curved surface of the connector and the contactor is elastically supported in a vertical direction by the plate spring to allow both end portions of the contactor to perform a vertical elastic movement relative to a longitudinal center of the contactor. The present invention can prevent damages due to a mechanical impact between the connector of the conductor base and the contactor of the finger module, which may occur while the breaker terminal is inserted into the finger module, to thereby extend the lifespan of the conductor base and the finger module.

Abstract: A catalyst-enhanced chemical vapor deposition (CECVD) apparatus and a deposition method, in which tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated. The CECVD apparatus may be constructed with a process chamber, a showerhead to introduce process gas into process chamber, a tensile catalyst wire structure provided in the process chamber to decompose the gas introduced from the showerhead, and a substrate on which the gas decomposed by the catalyst wire structure is deposited, so that the tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated, thereby eliminating occurrences of non-uniform temperatures of a substrate and non-uniform film growth, and concomitantly enhancing the durability of the catalyst wire.

Abstract: The present invention provides a catalytic enhanced chemical vapor deposition (CVD) apparatus capable of maximizing efficiency of gas use to 80% or more, and obtaining a uniform thin film by efficiently arranging filaments mounted on a shower head of the catalytic enhanced CVD apparatus, thereby uniformly decomposing a deposition source gas. The present invention also provides a method for fabricating an organic electroluminescent device with an inorganic film formed through the catalytic enhanced CVD apparatus.

Abstract: A catalyst enhanced chemical vapor deposition (CECVD) apparatus is provided in which the showerhead and catalyst support are separated from each other. The CECVD apparatus has excellent spacing between the showerhead, catalyst wire and substrate and can be purged to prevent contaminants from forming on parts functioning at low temperatures. The CECVD apparatus comprises a reaction chamber, a showerhead for introducing reaction gas into the reaction chamber, a catalyst wire for decomposing the reaction gas, a catalyst support for supporting the catalyst wire, a substrate on which the decomposed gas is deposited, and a substrate support for supporting the substrate.

Abstract: Provided is a drying heater, a heating unit for drying laundry using the same, a drying control system and control method thereof that reduces electric power consumption of the drying heater to supply high temperature dry air to the inside of a drum in a washing machine or a laundry drying machine, to thus simplify structure of the drying heater and reduce a manufacturing cost. The drying control method includes the step of applying a first electric power from a first drive power supply to a drying heater when a drum internal temperature is lower than a preset temperature, and applying a second electric power from a second drive power supply which is relatively smaller than the first electric power to the drying heater when the drum internal temperature is higher than the preset temperature. The drying heater includes a surface-shaped heat generation member made of a low thermal density strip style metal thin plate.

Abstract: In one embodiment, a non-volatile memory device includes an isolation film defining an active region in a semiconductor substrate; a tunnel insulating film located on the active region; a control gate located on the isolation film; an inter-gate dielectric film parallel to the control gate and located between the control gate and the isolation film; an electrode overlapped by the control gate and the inter-gate dielectric film, wherein the electrode extends over the tunnel insulating film on the active region to form a floating gate; and a source region and a drain region formed in the active region on both sides of the floating gate.

Abstract: A method for in-situ polycrystalline thin film growth is provided. A catalyst enhanced chemical vapor deposition (CECVD) apparatus is used to grow the polycrystalline silicon thin film. No subsequent annealing or dehydrogenating process is needed. The method comprises exhausting a chamber to form a vacuum chamber, and then purging vacuum chamber and introducing a catalyst. A substrate is then placed in the vacuum chamber and reaction gas is injected into the chamber. The reaction gas reacts with the catalyst in the chamber to grow a polycrystalline thin film on the substrate. The inventive method reduces processing time and production cost and can be used to fabricate larger devices due to the elimination of bulky annealing equipment.

Abstract: Provided is a catalyst converter for purifying exhaust gas and a method for manufacturing the catalyst converter, in which a heater is disposed between inner/outer monoliths, to thereby heighten a heat transfer efficiency and induce a uniform catalytic reaction, and to thereby enhance a processing performance, and minimize an electric power consumption and miniaturize a device. The catalyst converter includes: a heater having a winding portion which is wound so as to have a space therein and a pair of electric power terminals; inner and outer monoliths which are inserted in the inner and outer circumferential portions of the heater winding portion wherein each of the inner and outer monoliths includes a number of hollow cells on the surfaces of which catalysts have been coated and which are formed in the lengthy direction; and a housing in which a support assembly is assembled.

Abstract: A transistor, transistor arrangement and method thereof are provided. The example method may include determining whether a gate width of the transistor has been adjusted; and adjusting a distance between a higher-concentration impurity-doped region of the transistor and a device isolation layer of the transistor based on the adjusted gate width if the determining step determines the gate width of the transistor is adjusted. The example transistor may include a first device isolation layer defining a first active region, a first gate line having a first gate width and crossing over the first active region, a first lower-concentration impurity-doped region formed in the first active region at first and second sides of the first gate line and a first higher-concentration impurity-doped region formed in the lower-concentration impurity-doped region and not in contact with the gate line and the device-isolation layer.

Abstract: A method of forming an alignment key with a capping layer in a semiconductor device without an additional mask formation process, and a method of fabricating a semiconductor device using the same, may be provided. The method of forming an alignment key may include forming an isolation layer confining an active region in a chip region of a semiconductor substrate, and forming an alignment key having a step height difference with respect to the surface of the semiconductor substrate in a scribe lane. An at least one formation layer for forming an element may be formed on the substrate, and patterned, to form an element-forming pattern on the semiconductor substrate in the chip region, and a capping layer capping the alignment key on the semiconductor substrate in the scribe lane.

Abstract: A conductor base coupled to a finger module of an air circuit breaker. Since the connector of the conductor base has the curved surface formed on a side of an end portion thereof and tooth-coupled with the contactor of the finger module, the contactor of the finger module has another curved surface corresponding to the curved surface of the connector and the contactor is elastically supported in a vertical direction by the plate spring to allow both end portions of the contactor to perform a vertical elastic movement relative to a longitudinal center of the contactor. The present invention can prevent damages due to a mechanical impact between the connector of the conductor base and the contactor of the finger module, which may occur while the breaker terminal is inserted into the finger module, to thereby extend the lifespan of the conductor base and the finger module.

Abstract: A transistor, transistor arrangement and method thereof are provided. The example method may include determining whether a gate width of the transistor has been adjusted; and adjusting a distance between a higher-concentration impurity-doped region of the transistor and a device isolation layer of the transistor based on the adjusted gate width if the determining step determines the gate width of the transistor is adjusted. The example transistor may include a first device isolation layer defining a first active region, a first gate line having a first gate width and crossing over the first active region, a first lower-concentration impurity-doped region formed in the first active region at first and second sides of the first gate line and a first higher-concentration impurity-doped region formed in the lower-concentration impurity-doped region and not in contact with the gate line and the device-isolation layer.

Abstract: A balance board includes; a substrate, a first wire disposed on the substrate, a second wire disposed on the substrate and spaced apart from the first wire, a plurality of first balance coils connected to the first wire and which uniformly distribute a first power supply voltage, a plurality of second balance coils connected to the second wire and which uniformly distribute a second power supply voltage, and a conductive pattern disposed on the substrate and spaced apart from the first and second wires, wherein the first and second wires are disposed substantially in parallel with each other, the second wire being divided into a plurality of parts with respect to an area where the first wire and the second wire cross over one another and the plurality of parts of the second wire are connected by a plurality of jumper connectors overlapping the first wire.

Abstract: A leakage current occurring on a boundary of a trench isolation region and an active region can be prevented in a Metal Oxide Semiconductor (MOS) Field Effect transistor, and a fabricating method thereof is provided. The transistor includes the trench isolation region disposed in a predetermined portion of a semiconductor substrate to define the active region. A source region and a drain region are spaced apart from each other within the active region with a channel region disposed between the source region and the drain region. A gate electrode crosses over the channel region between the source region and the drain region, and a gate insulating layer is disposed between the gate electrode and the channel region. An edge insulating layer thicker than the gate insulating layer is disposed on a lower surface of the gate electrode around the boundary of the trench isolation region and the active region.

Abstract: A Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) is provided. The MOSFET includes a semiconductor substrate, a device isolating region disposed on a predetermined portion of the semiconductor substrate to define an active region, a source region and a drain region spaced apart from each other about a channel region within the active region, and a gate electrode formed on the active region between the source region and the drain region. Furthermore, the MOSFET also includes a gate insulating layer formed between the active region and the gate electrode. The gate insulating layer includes a central gate insulating layer disposed under central portion of the gate electrode, an edge gate insulating layer disposed under an edge portion of the gate electrode to have a bottom surface level with a bottom of the central gate insulating layer and an upper surface protruding to be higher than an upper surface of the central gate insulating layer.

Abstract: A semiconductor integrated circuit device and a method of fabricating the same may be provided. The semiconductor integrated circuit device may include an align key pattern on a semiconductor substrate, a first passivation layer on the semiconductor substrate including the align key pattern and having a first opening exposing at least a portion of a top surface of the align key pattern, and a second passivation layer on the first passivation layer and within the first opening, wherein the second passivation layer covers the align key pattern exposed through the first opening.

Abstract: An air circuit breaker is provided wherein a rotational force is accurately discontinued at a movement completion time of assuming a connected position, a test position or a disconnected position by a breaker body in the process of withdrawing in and withdrawing out the breaker body from a cradle whereas a driving connection is performed if necessary, the breaker including a coupling device capable of being moved to a position where a withdraw-in and withdraw-out driving force generated by a manipulating handle is transmitted to a withdraw in and withdraw out apparatus and to a position where the withdraw-in and withdraw-out driving force is stopped of transmission.