Abstract: Methods and apparatuses for adjusting and controlling conditions within the environment of a workpiece handling module include sensors for detecting humidity and concentration of harmful gasses. Signals generated by these sensors are utilized to generate signals that control the flow of air into the environment and/or the flow of air and gases out of the environment. By controlling the humidity, negative impacts on processes carried out in the environment are avoided. By controlling the gas concentration, exposure of workers to harmful gases is avoided.

Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.

Abstract: In an embodiment, a system includes: a broadband light source; a wafer with a first side facing the broadband light source; a first light sensor configured to detect reflected light from the broadband light source emanating from the first side; a second light sensor configured to detect emergent light emanating from a second side of the wafer opposite the first side, wherein the emergent light originates from the broadband light source; and a detector module configured to analyze the reflected light and the emergent light to identify wafer defects.

Abstract: In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes the following operations. A substrate including a first atom and a second atom is provided. An etchant is dispatched from an ionizer. A compound is formed over the substrate by bonding the first atom with the etchant. A particle is released from an implanter. The compound is removed by bombarding the compound with the particle having an energy smaller than a bonding energy between the first atom and the second atom, wherein the particle is different from the etchant.

Abstract: In an embodiment, a system includes: a broadband light source; a wafer with a first side facing the broadband light source; a first light sensor configured to detect reflected light from the broadband light source emanating from the first side; a second light sensor configured to detect emergent light emanating from a second side of the wafer opposite the first side, wherein the emergent light originates from the broadband light source; and a detector module configured to analyze the reflected light and the emergent light to identify wafer defects.

Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.

Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.

Abstract: In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes the following operations. A substrate including a first atom and a second atom is provided. An etchant is dispatched from an ionizer. A compound is formed over the substrate by bonding the first atom with the etchant. A particle is released from an implanter. The compound is removed by bombarding the compound with the particle having an energy smaller than a bonding energy between the first atom and the second atom, wherein the particle is different from the etchant.

Abstract: In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes providing a substrate including a first atom and a second atom; forming a compound over the substrate by bonding the first atom with a ionized etchant; and removing the compound from the substrate by bombarding the compounds with a charged particle having a bombarding energy smaller than a bonding energy between the first atom and the second atom, wherein the charged particle and the ionized etchant include different ions.

Abstract: The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

Abstract: In an embodiment, a system includes: a broadband light source; a wafer with a first side facing the broadband light source; a first light sensor configured to detect reflected light from the broadband light source emanating from the first side; a second light sensor configured to detect emergent light emanating from a second side of the wafer opposite the first side, wherein the emergent light originates from the broadband light source; and a detector module configured to analyze the reflected light and the emergent light to identify wafer defects.

Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.

Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.

Abstract: The present disclosure, in some embodiments, relates to a substrate metrology system. The substrate metrology system includes a warpage measurement module configured to determine one or more substrate warpage parameters of a substrate. The substrate includes a plurality of conductive interconnect layers within a dielectric structure over a semiconductor substrate. A metrology module is located physically downstream of the warpage measurement module and has an optical element configured to measure one or more dimensions of the substrate. The metrology module is configured to place the optical element at a plurality of different initial positions, which are directly over a plurality of different locations on the substrate, based upon the one or more substrate warpage parameters. A substrate transport system is configured to transfer the substrate from a first position within the warpage measurement module to a non-overlapping second position within the metrology module.

Abstract: In an embodiment, a system includes: a broadband light source; a wafer with a first side facing the broadband light source; a first light sensor configured to detect reflected light from the broadband light source emanating from the first side; a second light sensor configured to detect emergent light emanating from a second side of the wafer opposite the first side, wherein the emergent light originates from the broadband light source; and a detector module configured to analyze the reflected light and the emergent light to identify wafer defects.

Abstract: In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes providing a substrate including a first atom and a second atom; forming a compound over the substrate by bonding the first atom with a ionized etchant; and removing the compound from the substrate by bombarding the compounds with a charged particle having a bombarding energy smaller than a bonding energy between the first atom and the second atom, wherein the charged particle and the ionized etchant include different ions.

Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can he delivered to, for example, an ion source head of the ion implantation tool.

Abstract: The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

Abstract: The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

Abstract: In some embodiments of the present disclosure, a method of treating an atom on a substrate includes an operation of ionizing an etchant and the ionized etchant is a positively charged. The method includes an operation of attaching the ionized etchant on the atom. The method also includes an operation of bonding the atom with the etchant to from a compound. The method further includes sputtering the substrate with a charged particle and an operation of applying a bias on the water.