Patents by Inventor Naoko Kihara
Naoko Kihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11378885Abstract: According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.Type: GrantFiled: March 13, 2018Date of Patent: July 5, 2022Assignee: Kioxia CorporationInventors: Koji Asakawa, Naoko Kihara, Seekei Lee, Norikatsu Sasao, Tomoaki Sawabe, Shinobu Sugimura
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Publication number: 20210141310Abstract: A photosensitive composition of an embodiment includes: a resin containing at least one selected from polyacrylic acid, polymethacrylic acid, a cycloolefin-maleic anhydride copolymer, polycycloolefin, and a vinyl ether-maleic anhydride copolymer and having an ester bond which is caused to generate carboxylic acid by an acid or an ether bond which is caused to generate alcohol by an acid; and a photo acid generator which generates an acid by being irradiated with light, of which a wavelength is not less than 300 nm nor more than 500 nm, or KrF excimer laser light, the photo acid generator containing a substance that has a naphthalene ring or a benzene ring and in which at least one carbon atom of the naphthalene ring or the benzene ring is bonded to a bulky group.Type: ApplicationFiled: January 14, 2021Publication date: May 13, 2021Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroko NAKAMURA, Koji ASAKAWA, Naoko KIHARA, Reiko YOSHIMURA, Ko YAMADA
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Patent number: 10877374Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.Type: GrantFiled: March 8, 2018Date of Patent: December 29, 2020Assignee: Toshiba Memory CorporationInventors: Koji Asakawa, Seekei Lee, Naoko Kihara, Norikatsu Sasao, Tomoaki Sawabe, Shinobu Sugimura
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Publication number: 20200123299Abstract: According to one embodiment, a pattern formation material is included in a polymer layer to be provided between a block copolymer layer and a substrate. The block copolymer layer includes a block copolymer including a plurality of blocks. The pattern formation material includes a pattern formation polymer. The pattern formation polymer consists of a main chain including an acrylic backbone, and a side chain. One of the plurality of blocks include a plurality of polymer components. The plurality of polymer components are of mutually-different types. A solubility parameter of the pattern formation material is between a maximum value and a minimum value of a solubility parameter of the polymer components.Type: ApplicationFiled: December 18, 2019Publication date: April 23, 2020Applicant: TOSHIBA MEMORY CORPORATIONInventors: Koji ASAKAWA, Norikatsu SASAO, Tomoaki SAWABE, Naoko KIHARA, Shinobu SUGIMURA
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Publication number: 20190084829Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a preparation process, a first layer formation process, a block copolymer layer formation process, and a contact process. The preparation process prepares a pattern formation material including a polymer including a first chemical structure including carbon, hydrogen, and a first group. The first group includes one of a vinyl group, a hydroxy group, or a first element. The first layer formation process forms a first layer on a base body. The first layer includes the pattern formation material. The block copolymer layer formation process forms a block copolymer layer on the first layer. The block copolymer layer includes a first polymer and a second polymer. The block copolymer layer formation process includes forming first and second regions. The contact process causes the block copolymer layer to contact a metal compound including a metallic element.Type: ApplicationFiled: March 9, 2018Publication date: March 21, 2019Applicant: TOSHIBA MEMORY CORPORATIONInventors: Norikatsu SASAO, Koji Asakawa, Seekei Lee, Naoko Kihara, Tomoaki Sawabe, Shinobu Sugimura
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Publication number: 20190086803Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.Type: ApplicationFiled: March 8, 2018Publication date: March 21, 2019Applicant: TOSHIBA MEMORY CORPORATIONInventors: Koji Asakawa, Seekei Lee, Naoko Kihara, Norikatsu Sasao, Tomoaki Sawabe, Shinobu Sugimura
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Publication number: 20190086805Abstract: According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.Type: ApplicationFiled: March 13, 2018Publication date: March 21, 2019Applicant: TOSHIBA MEMORY CORPORATIONInventors: Koji ASAKAWA, Naoko KIHARA, Seekei LEE, Norikatsu SASAO, Tomoaki SAWABE, Shinobu SUGIMURA
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Publication number: 20190086804Abstract: A photosensitive composition of an embodiment includes: a resin containing at least one selected from polyacrylic acid, polymethacrylic acid, a cycloolefin-maleic anhydride copolymer, polycycloolefin, and a vinyl ether-maleic anhydride copolymer and having an ester bond which is caused to generate carboxylic acid by an acid or an ether bond which is caused to generate alcohol by an acid; and a photo acid generator which generates an acid by being irradiated with light, of which a wavelength is not less than 300 nm nor more than 500 nm, or KrF excimer laser light, the photo acid generator containing a substance that has a naphthalene ring or a benzene ring and in which at least one carbon atom of the naphthalene ring or the benzene ring is bonded to a bulky group.Type: ApplicationFiled: March 16, 2018Publication date: March 21, 2019Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroko Nakamura, Koji Asakawa, Naoko Kihara, Reiko Yoshimura, Ko Yamada
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Publication number: 20180265616Abstract: According to one embodiment, a pattern formation material is included in a polymer layer to be provided between a block copolymer layer and a substrate. The block copolymer layer includes a block copolymer including a plurality of blocks. The pattern formation material includes a pattern formation polymer. The pattern formation polymer consists of a main chain including an acrylic backbone, and a side chain. One of the plurality of blocks include a plurality of polymer components. The plurality of polymer components are of mutually-different types. A solubility parameter of the pattern formation material is between a maximum value and a minimum value of a solubility parameter of the polymer components.Type: ApplicationFiled: September 13, 2017Publication date: September 20, 2018Applicant: Toshiba Memory CorporationInventors: Koji ASAKAWA, Norikatsu Sasao, Tomoaki Sawabe, Naoko Kihara, Shinobu Sugimura
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Patent number: 9859119Abstract: A pattern formation method according to an embodiment includes providing a substrate in which protrusions each having a tapered shape are provided on a main surface. The method further includes supplying the main surface with spherical particles equal in diameter to make the spherical particles arrange in a triangular lattice form such that each of the protrusions is at least partially positioned within a region surrounded by the main surface and three of the spherical particles adjacent to one another.Type: GrantFiled: September 2, 2016Date of Patent: January 2, 2018Assignee: Toshiba Memory CorporationInventors: Takeshi Okino, Akira Watanabe, Naoko Kihara, Ryosuke Yamamoto
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Patent number: 9835947Abstract: A self-organization material according to an embodiment includes a block copolymer and a top coat material. The block copolymer contains a first block and a second block. The second block has a surface free energy higher than that of the first block. The top coat material contains a first portion having a surface free energy higher than that of the first block and lower than that of the second block, and a second portion having a surface free energy lower than that of the first block. The first portion is one of a homopolymer miscible with both the first block and the second block, and a random copolymer having a repeating unit of the first block and a repeating unit of the second block. The second portion is one of an organic siloxane-containing polymer and a fluorine-containing polymer.Type: GrantFiled: September 6, 2016Date of Patent: December 5, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Yuriko Seino, Naoko Kihara
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Publication number: 20170073542Abstract: A self-organization material according to an embodiment includes a block copolymer and a top coat material. The block copolymer contains a first block and a second block. The second block has a surface free energy higher than that of the first block. The top coat material contains a first portion having a surface free energy higher than that of the first block and lower than that of the second block, and a second portion having a surface free energy lower than that of the first block. The first portion is one of a homopolymer miscible with both the first block and the second block, and a random copolymer having a repeating unit of the first block and a repeating unit of the second block. The second portion is one of an organic siloxane-containing polymer and a fluorine-containing polymer.Type: ApplicationFiled: September 6, 2016Publication date: March 16, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Yuriko SEINO, Naoko Kihara
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Publication number: 20170062206Abstract: A pattern formation method according to an embodiment includes providing a substrate in which protrusions each having a tapered shape are provided on a main surface. The method further includes supplying the main surface with spherical particles equal in diameter to make the spherical particles arrange in a triangular lattice form such that each of the protrusions is at least partially positioned within a region surrounded by the main surface and three of the spherical particles adjacent to one another.Type: ApplicationFiled: September 2, 2016Publication date: March 2, 2017Inventors: Takeshi OKINO, Akira WATANABE, Naoko KIHARA, Ryosuke YAMAMOTO
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Patent number: 9281480Abstract: In one embodiment, a method for forming pattern includes forming a guide layer on a substrate, forming a copolymer layer of a high-molecular block copolymer on the guide layer; and forming a phase-separation structure with a phase-separation cycle d by self-assembling the copolymer layer. The high-molecular block copolymer includes a first and a second polymer. The guide layer includes a first and a second region disposed on the substrate. Widths of the first and second region respectively are approximately (d/2)×n and (d/2)×m. Both of the first and second region are to be pinned with none of the first and second polymer. Surface energies of the first and second region are different from one another. Integers n and m are odd numbers. Value d is a phase-separation cycle of the high-molecular block copolymer.Type: GrantFiled: March 4, 2015Date of Patent: March 8, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Yuriko Seino, Naoko Kihara
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Patent number: 9269387Abstract: In one embodiment, there are provided: a substrate; a data area disposed on the substrate and having a plurality of first magnetic dots arrayed in lines in mutually different first, second, and third directions; and a boundary magnetic part having a plurality of first magnetic portions arrayed in a line in the third direction and each having a length longer than that of the first magnetic dot in the third direction, and a second magnetic dot disposed between the first magnetic portions and disposed on extensions in the first and second directions of the first magnetic dots, and disposed along with the data area on the substrate.Type: GrantFiled: December 18, 2014Date of Patent: February 23, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Akira Kikitsu, Naoko Kihara, Yoshiyuki Kamata, Hiroyuki Hieda
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Patent number: 9190288Abstract: A pattern forming method includes forming a coating film containing a hydrophilic first homopolymer having a first bonding group and a hydrophobic second homopolymer having a second bonding group capable of bonding with the first bonding group, forming a bond between the first and second bonding group to produce a block copolymer of the first and second homopolymers, and heating the coating film to microphase-separating the copolymer into a hydrophilic domain and a hydrophobic domain. The hydrophilic and hydrophobic domains are arranged alternately. The bond is broken, then selectively dissolving-removing either domain by a solvent to provide a polymer pattern of a remainder domain.Type: GrantFiled: November 21, 2014Date of Patent: November 17, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hiroki Tanaka, Ryosuke Yamamoto, Naoko Kihara
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Publication number: 20150311442Abstract: In one embodiment, a method for forming pattern includes forming a guide layer on a substrate, forming a copolymer layer of a high-molecular block copolymer on the guide layer; and forming a phase-separation structure with a phase-separation cycle d by self-assembling the copolymer layer. The high-molecular block copolymer includes a first and a second polymer. The guide layer includes a first and a second region disposed on the substrate. Widths of the first and second region respectively are approximately (d/2)×n and (d/2)×m. Both of the first and second region are to be pinned with none of the first and second polymer. Surface energies of the first and second region are different from one another. Integers n and m are odd numbers. Value d is a phase-separation cycle of the high-molecular block copolymer.Type: ApplicationFiled: March 4, 2015Publication date: October 29, 2015Inventors: Yuriko SEINO, Naoko KIHARA
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Patent number: 9050752Abstract: An imprint method according to this embodiment includes preparing a mold having a recessed portion, filling the recessed portion with a mold non-reactive material, pressing the mold against a resist which is applied on a base material, curing the resist in a state that the mold is pressed, and separating the mold from the base material. The mold non-reactive material is a material which does not chemically react with a material of the mold. By curing of the resist, the resist and the mold non-reactive material are coupled. When the mold is separated from the base material, the resist and the mold non-reactive material are left on the base material.Type: GrantFiled: November 19, 2013Date of Patent: June 9, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Yasuaki Ootera, Yoshiyuki Kamata, Naoko Kihara, Yoshiaki Kawamonzen
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Publication number: 20150102008Abstract: In one embodiment, there are provided: a substrate; a data area disposed on the substrate and having a plurality of first magnetic dots arrayed in lines in mutually different first, second, and third directions; and a boundary magnetic part having a plurality of first magnetic portions arrayed in a line in the third direction and each having a length longer than that of the first magnetic dot in the third direction, and a second magnetic dot disposed between the first magnetic portions and disposed on extensions in the first and second directions of the first magnetic dots, and disposed along with the data area on the substrate.Type: ApplicationFiled: December 18, 2014Publication date: April 16, 2015Inventors: Akira KIKITSU, Naoko KIHARA, Yoshiyuki KAMATA, Hiroyuki HIEDA
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Publication number: 20150079794Abstract: A pattern forming method includes forming a coating film containing a hydrophilic first homopolymer having a first bonding group and a hydrophobic second homopolymer having a second bonding group capable of bonding with the first bonding group, forming a bond between the first and second bonding group to produce a block copolymer of the first and second homopolymners, and heating the coating film to microphase-separating the copolymer into a hydrophilic domain and a hydrophobic domain. The hydrophilic and hydrophobic domains are arranged alternately. The bond is broken, then selectively dissolving-removing either domain by a solvent to provide a polymer pattern of a remainder domain.Type: ApplicationFiled: November 21, 2014Publication date: March 19, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroki TANAKA, Ryosuke YAMAMOTO, Naoko KIHARA